JP6916886B2 - 分光組成分析のためのウェハ粒子欠陥の活性化 - Google Patents

分光組成分析のためのウェハ粒子欠陥の活性化 Download PDF

Info

Publication number
JP6916886B2
JP6916886B2 JP2019541117A JP2019541117A JP6916886B2 JP 6916886 B2 JP6916886 B2 JP 6916886B2 JP 2019541117 A JP2019541117 A JP 2019541117A JP 2019541117 A JP2019541117 A JP 2019541117A JP 6916886 B2 JP6916886 B2 JP 6916886B2
Authority
JP
Japan
Prior art keywords
particles
inspection system
illumination
surface inspection
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019541117A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020505607A (ja
JP2020505607A5 (enExample
Inventor
クルト ハーラー
クルト ハーラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2020505607A publication Critical patent/JP2020505607A/ja
Publication of JP2020505607A5 publication Critical patent/JP2020505607A5/ja
Application granted granted Critical
Publication of JP6916886B2 publication Critical patent/JP6916886B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65Raman scattering
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2019541117A 2017-01-30 2018-01-26 分光組成分析のためのウェハ粒子欠陥の活性化 Active JP6916886B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/419,355 US10551320B2 (en) 2017-01-30 2017-01-30 Activation of wafer particle defects for spectroscopic composition analysis
US15/419,355 2017-01-30
PCT/US2018/015570 WO2018140805A1 (en) 2017-01-30 2018-01-26 Activation of wafer particle defects for spectroscopic composition analysis

Publications (3)

Publication Number Publication Date
JP2020505607A JP2020505607A (ja) 2020-02-20
JP2020505607A5 JP2020505607A5 (enExample) 2021-03-04
JP6916886B2 true JP6916886B2 (ja) 2021-08-11

Family

ID=62977757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019541117A Active JP6916886B2 (ja) 2017-01-30 2018-01-26 分光組成分析のためのウェハ粒子欠陥の活性化

Country Status (8)

Country Link
US (1) US10551320B2 (enExample)
EP (1) EP3549160B1 (enExample)
JP (1) JP6916886B2 (enExample)
KR (1) KR102353259B1 (enExample)
CN (1) CN110313058B (enExample)
SG (1) SG11201906281RA (enExample)
TW (1) TWI764979B (enExample)
WO (1) WO2018140805A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438339B1 (en) 2016-09-12 2019-10-08 Apple Inc. Optical verification system and methods of verifying micro device transfer
CN120107078A (zh) * 2018-07-13 2025-06-06 Asml荷兰有限公司 Sem图像增强方法和系统
IL263106B2 (en) * 2018-11-19 2023-02-01 Nova Ltd Integrated measurement system
CN111007016A (zh) * 2019-12-09 2020-04-14 暨南大学 一种检测透明材料表面微小颗粒杂质的装置及使用方法
KR102788882B1 (ko) 2020-03-26 2025-04-01 삼성전자주식회사 기판 검사 시스템
CN111879749B (zh) * 2020-07-23 2023-02-14 西安近代化学研究所 压装pbx炸药柱中nto晶体品质表征方法
US12345658B2 (en) * 2020-09-24 2025-07-01 Kla Corporation Large-particle monitoring with laser power control for defect inspection
KR20220041388A (ko) 2020-09-25 2022-04-01 세메스 주식회사 광학계 교정 방법
EP3995808B1 (de) * 2020-11-09 2023-01-04 Siltronic AG Verfahren zum klassifizieren von unbekannten partikeln auf einer oberfläche einer halbleiterscheibe
KR102501486B1 (ko) * 2020-12-10 2023-02-17 한국화학연구원 나노 입자 또는 나노 구조체에서 발생된 분광 신호 분석 시스템 및 분석 방법
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
CN113884443A (zh) * 2021-05-19 2022-01-04 北京航空航天大学 基于磁光克尔效应的磁性晶圆大视野成像方法和成像装置
CN114544208A (zh) * 2021-11-04 2022-05-27 万向一二三股份公司 一种超声焊接机稳定性检测装置和方法
KR102602029B1 (ko) * 2021-11-11 2023-11-14 주식회사 에타맥스 광루미네선스 검사와 자동광학검사를 동시에 수행하는 마이크로 led 검사장비
TWI833390B (zh) * 2022-02-23 2024-02-21 南亞科技股份有限公司 製造缺陷原因之識別系統以及非暫時性電腦可讀媒體
US12118709B2 (en) 2022-02-23 2024-10-15 Nanya Technology Corporation Method for identifying cause of manufacturing defects
US12175652B2 (en) 2022-02-23 2024-12-24 Nanya Technology Corporation System and non-transitory computer-readable medium for identifying cause of manufacturing defects
KR102781411B1 (ko) * 2022-11-03 2025-03-17 한국기계연구원 필터 교체형 플라즈마 모니터링 시스템 및 이를 이용한 플라즈마 모니터링 방법
CN116660285B (zh) * 2023-07-26 2023-11-17 浙江大学 一种晶圆特征光谱在线检测装置
FR3155632B1 (fr) * 2023-11-21 2025-11-07 Soitec Silicon On Insulator procédé de fabrication d’une structure composite incluant une étape de gradation

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978862A (en) * 1988-07-13 1990-12-18 Vti, Inc. Method and apparatus for nondestructively measuring micro defects in materials
US6271916B1 (en) 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
JP3258821B2 (ja) * 1994-06-02 2002-02-18 三菱電機株式会社 微小異物の位置決め方法、分析方法、これに用いる分析装置およびこれを用いた半導体素子もしくは液晶表示素子の製法
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5943552A (en) * 1997-02-06 1999-08-24 Seh America, Inc. Schottky metal detection method
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6201601B1 (en) 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
US6208411B1 (en) 1998-09-28 2001-03-27 Kla-Tencor Corporation Massively parallel inspection and imaging system
US6067154A (en) * 1998-10-23 2000-05-23 Advanced Micro Devices, Inc. Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy
JP3741602B2 (ja) * 1999-11-26 2006-02-01 日本電子株式会社 顕微ラマン分光システム
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
CN1233030C (zh) * 2000-10-06 2005-12-21 Aoti营运有限公司 表面金属污染的检测方法
US6791099B2 (en) * 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
US6597446B2 (en) * 2001-03-22 2003-07-22 Sentec Corporation Holographic scatterometer for detection and analysis of wafer surface deposits
JP2003059988A (ja) * 2001-08-10 2003-02-28 Matsushita Electric Ind Co Ltd 半導体装置の欠陥検出法および装置
AU2002349791A1 (en) * 2001-11-06 2003-05-19 C.I. Systems Ltd. In-line spectroscopy for process monitoring
US6986280B2 (en) * 2002-01-22 2006-01-17 Fei Company Integrated measuring instrument
US7130039B2 (en) 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
GB0308182D0 (en) * 2003-04-09 2003-05-14 Aoti Operating Co Inc Detection method and apparatus
US7295303B1 (en) 2004-03-25 2007-11-13 Kla-Tencor Technologies Corporation Methods and apparatus for inspecting a sample
US7200498B2 (en) * 2004-05-26 2007-04-03 Texas Instruments Incorporated System for remediating cross contamination in semiconductor manufacturing processes
GB0510497D0 (en) * 2004-08-04 2005-06-29 Horiba Ltd Substrate examining device
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US7433056B1 (en) * 2005-07-15 2008-10-07 Kla-Tencor Technologies Corporation Scatterometry metrology using inelastic scattering
JP2007139491A (ja) * 2005-11-16 2007-06-07 Seiko Epson Corp 欠陥の測定方法
US7372559B2 (en) * 2005-12-14 2008-05-13 Kla-Tencor Technologies Corp. Systems and methods for inspecting a wafer with increased sensitivity
US20070176119A1 (en) * 2006-01-30 2007-08-02 Accent Optical Technologies, Inc. Apparatuses and methods for analyzing semiconductor workpieces
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7436505B2 (en) * 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
JP5147202B2 (ja) * 2006-06-30 2013-02-20 株式会社日立ハイテクノロジーズ 光学式欠陥検査装置
US7362426B1 (en) * 2006-10-06 2008-04-22 Wafermasters, Inc. Raman and photoluminescence spectroscopy
US7659979B2 (en) * 2006-10-17 2010-02-09 Kla-Tencor Corporation Optical inspection apparatus and method
US7728969B2 (en) 2006-12-05 2010-06-01 Kla-Tencor Technologies Corp. Methods and systems for identifying defect types on a wafer
US20080151259A1 (en) * 2006-12-21 2008-06-26 Woo Sik Yoo Synchronized wafer mapping
WO2008154186A1 (en) * 2007-06-06 2008-12-18 Semiconductor Diagnostics, Inc. Enhanced sensitivity non-contact electrical monitoring of copper contamination on silicon surface
JP2009014510A (ja) * 2007-07-04 2009-01-22 Hitachi High-Technologies Corp 検査方法及び検査装置
US8169613B1 (en) * 2008-11-21 2012-05-01 Kla-Tencor Corp. Segmented polarizer for optimizing performance of a surface inspection system
JP2011009554A (ja) 2009-06-26 2011-01-13 Fujitsu Semiconductor Ltd 欠陥検査方法及び欠陥検査装置
JP5600166B2 (ja) * 2009-08-04 2014-10-01 エーエスエムエル ネザーランズ ビー.ブイ. 対象検査システムおよび方法
US20110292376A1 (en) * 2010-05-26 2011-12-01 Kukushkin Igor V Apparatus and method for detecting raman and photoluminescence spectra of a substance
US9488922B2 (en) 2010-12-06 2016-11-08 Asml Netherlands B.V. Methods and apparatus for inspection of articles, EUV lithography reticles, lithography apparatus and method of manufacturing devices
EP2666008B1 (en) * 2011-01-21 2021-08-11 Labrador Diagnostics LLC Systems and methods for sample use maximization
US8755044B2 (en) 2011-08-15 2014-06-17 Kla-Tencor Corporation Large particle detection for multi-spot surface scanning inspection systems
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8786850B2 (en) * 2012-10-29 2014-07-22 Kla-Tencor Corporation Illumination energy management in surface inspection
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9529182B2 (en) * 2013-02-13 2016-12-27 KLA—Tencor Corporation 193nm laser and inspection system
US9354177B2 (en) * 2013-06-26 2016-05-31 Kla-Tencor Corporation System and method for defect detection and photoluminescence measurement of a sample
US9804101B2 (en) * 2014-03-20 2017-10-31 Kla-Tencor Corporation System and method for reducing the bandwidth of a laser and an inspection system and method using a laser
US10078204B2 (en) * 2014-03-29 2018-09-18 Intel Corporation Non-destructive 3-dimensional chemical imaging of photo-resist material
US20160293502A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Method and apparatus for detecting defects on wafers

Also Published As

Publication number Publication date
CN110313058A (zh) 2019-10-08
JP2020505607A (ja) 2020-02-20
TWI764979B (zh) 2022-05-21
US10551320B2 (en) 2020-02-04
EP3549160A1 (en) 2019-10-09
EP3549160A4 (en) 2020-07-08
US20180217065A1 (en) 2018-08-02
KR102353259B1 (ko) 2022-01-18
EP3549160B1 (en) 2022-01-05
WO2018140805A1 (en) 2018-08-02
CN110313058B (zh) 2022-06-28
SG11201906281RA (en) 2019-08-27
TW201832304A (zh) 2018-09-01
KR20190104628A (ko) 2019-09-10

Similar Documents

Publication Publication Date Title
JP6916886B2 (ja) 分光組成分析のためのウェハ粒子欠陥の活性化
US10533954B2 (en) Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
JP6717777B2 (ja) 試験体の測定または分析のためのシステムおよび方法
TWI722246B (zh) 用於半導體晶圓檢查之缺陷標記
US6067154A (en) Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy
US7349079B2 (en) Methods for measurement or analysis of a nitrogen concentration of a specimen
US7067819B2 (en) Systems and methods for measurement or analysis of a specimen using separated spectral peaks in light
US7359052B2 (en) Systems and methods for measurement of a specimen with vacuum ultraviolet light
US9255891B2 (en) Inspection beam shaping for improved detection sensitivity
US20050252752A1 (en) Systems and methods for measurement of a specimen with vacuum ultraviolet light
JP2020508568A (ja) 厚膜及び高アスペクト比構造の計測方法及びシステム
US7773212B1 (en) Contemporaneous surface and edge inspection
US10551166B2 (en) Optical measurement of a highly absorbing film layer over highly reflective film stacks
JP2008249386A (ja) 欠陥検査装置および欠陥検査方法
TWI728197B (zh) 整合至一計量及/或檢測工具中之製程模組
JP6952033B2 (ja) Vuv光学素子の非接触サーマル測定
TWI780109B (zh) 用於半導體計量及檢驗之系統及方法
JP6215677B2 (ja) 顕微ラマン分光装置および顕微ラマン分光システム
JP6410902B2 (ja) 顕微ラマン分光装置および顕微ラマン分光システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210121

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210121

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20210121

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20210310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210316

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210713

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210716

R150 Certificate of patent or registration of utility model

Ref document number: 6916886

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250