SG11201806100PA - Apparatus of plural charged-particle beams - Google Patents

Apparatus of plural charged-particle beams

Info

Publication number
SG11201806100PA
SG11201806100PA SG11201806100PA SG11201806100PA SG11201806100PA SG 11201806100P A SG11201806100P A SG 11201806100PA SG 11201806100P A SG11201806100P A SG 11201806100PA SG 11201806100P A SG11201806100P A SG 11201806100PA SG 11201806100P A SG11201806100P A SG 11201806100PA
Authority
SG
Singapore
Prior art keywords
international
san jose
ho1j
avenue
english
Prior art date
Application number
SG11201806100PA
Inventor
Weiming Ren
Xuedong Liu
Xuerang Hu
Zhongwei Chen
Original Assignee
Hermes Microvision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Microvision Inc filed Critical Hermes Microvision Inc
Publication of SG11201806100PA publication Critical patent/SG11201806100PA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 111111110111101110101011111 HO 11111011101110010101111111011111011110111111 International Bureau .. .... ..Yejd ..... .....1 (10) International Publication Number (43) International Publication Date WO 2017/132435 Al 3 August 2017 (03.08.2017) WI P0 I P CT (51) International Patent Classification: (74) Agent: KING, Justin; WPAT, P.C., 8230 Boone Blvd, GO6T 7/00 (2017.01) H01J 37/26 (2006.01) Suite 405, Vienna, VA 22182 (US). H01J 37/252 (2006.01) H01J 37/06 (2006.01) HO1J 37/20 (2006.01) HO1J 37/04 (2006.01) (81) Designated States (unless otherwise indicated, for every H01J 37/28 (2006.01) H01J 37/10 (2006.01) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (21) International Application Number: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, PCT/US2017/015223 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (22) International Filing Date: KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, 27 January 2017 (27.01.2017) MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, (25) Filing Language: English NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, (26) Publication Language: English TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (30) Priority Data: ZA, ZM, ZW. 62/287,626 27 January 2016 (27.01.2016) US (84) Designated States (unless otherwise indicated, for every (71) Applicant: HERMES MICROVISION INC.; 7F, No. 18, kind of regional protection available): ARIPO (BW, GH, Puding Road East Dist., Hsinchu City, 300 (TW). GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (72) Inventors; and TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, (71) Applicants : REN, Weiming [CN/US]; 2069 Kiwi Walk- DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, way, San Jose, CA 95133 (US). LIU, Xuedrang [CN/US]; LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, = 5458 Ora Street, San Jose, CA 95129 (US). HU, Xuerang SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, = [CN/US]; 1363 Danby Avenue, San Jose, CA 95132 (US). GW, KM, ML, MR, NE, SN, TD, TG). — CHEN, Zhongwei [US/US]; 1561 Blaney Avenue, San Jose, CA 95129 (US). [Continued on next page] (54) Title: APPARATUS = = 500A — _ vr = = OF PLURAL CHARGED-PARTICLE BEAMS (57) : A new multi-beam apparatus with a total FOV variable in size, orientation and incident angle, is proposed. The new apparatus provides more flexibility to speed the sample observation and enable more samples ob- servable. More specifically, as a yield management tool to inspect and/or re- view defects on wafers/masks in semiconductor manufacturing industry, the new apparatus provide more possibilities to achieve a high throughput and = = 7 detect more kinds of defects. = = = F ' = = — 1 1 1 VS40 A L SV , r r ' kr) M 7r :1: 10. . ':,, ei M 11 Figure 5B °mention) N 11 © ei O WO 2017/132435 Al 1#11101MOHNOIRME30111101010EMOMEMOVOIMIE Published: — with international search report (Art. 21(3))
SG11201806100PA 2016-01-27 2017-01-27 Apparatus of plural charged-particle beams SG11201806100PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662287626P 2016-01-27 2016-01-27
PCT/US2017/015223 WO2017132435A1 (en) 2016-01-27 2017-01-27 Apparatus of plural charged-particle beams

Publications (1)

Publication Number Publication Date
SG11201806100PA true SG11201806100PA (en) 2018-08-30

Family

ID=59360788

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806100PA SG11201806100PA (en) 2016-01-27 2017-01-27 Apparatus of plural charged-particle beams

Country Status (8)

Country Link
US (2) US10062541B2 (en)
EP (1) EP3408829B1 (en)
JP (2) JP6724145B2 (en)
KR (3) KR102480232B1 (en)
CN (2) CN113192815A (en)
IL (2) IL260629B (en)
SG (1) SG11201806100PA (en)
WO (1) WO2017132435A1 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015202172B4 (en) 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Particle beam system and method for particle-optical examination of an object
KR102480232B1 (en) 2016-01-27 2022-12-22 에이에스엠엘 네델란즈 비.브이. Apparatus of Plural Charged-Particle Beams
JP6959989B2 (en) 2017-04-28 2021-11-05 エーエスエムエル ネザーランズ ビー．ブイ． A device that uses multiple beams of charged particles
KR20230032003A (en) 2017-09-07 2023-03-07 에이에스엠엘 네델란즈 비.브이. Method of inspecting samples with multiple beams of charged particles
US10566170B2 (en) 2017-09-08 2020-02-18 Electronics And Telecommunications Research Institute X-ray imaging device and driving method thereof
JP7395466B2 (en) 2017-09-29 2023-12-11 エーエスエムエル ネザーランズ ビー．ブイ． Image contrast enhancement in sample inspection
CN111527581B (en) 2017-09-29 2023-11-14 Asml荷兰有限公司 Method for inspecting a sample using a plurality of charged particle beams
WO2019068666A1 (en) 2017-10-02 2019-04-11 Asml Netherlands B.V. An apparatus using charged particle beams
DE102018202421B3 (en) 2018-02-16 2019-07-11 Carl Zeiss Microscopy Gmbh Multibeam particle beam
DE102018202428B3 (en) 2018-02-16 2019-05-09 Carl Zeiss Microscopy Gmbh Multibeam Teilchenmikroskop
CN112055886A (en) 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 Charged particle multi-beam system and method
CN111819654B (en) * 2018-03-09 2023-11-14 Asml荷兰有限公司 Multibeam detection apparatus with improved signal electronic detection performance
EP3550585B1 (en) * 2018-04-05 2021-06-23 FEI Company Studying dynamic specimens in a transmission charged particle microscope
US10811215B2 (en) 2018-05-21 2020-10-20 Carl Zeiss Multisem Gmbh Charged particle beam system
CN112189248B (en) * 2018-05-22 2024-04-02 株式会社日立高新技术 Charged particle beam device and axis adjustment method thereof
KR102396948B1 (en) * 2018-08-06 2022-05-16 한국전자통신연구원 X-ray imaging device and driving method thereof
JP2021532545A (en) * 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． Device for multiple charged particle beams
EP3618095A1 (en) * 2018-08-28 2020-03-04 ASML Netherlands B.V. Multi electron beam inspection methods and systems
DE102018007455B4 (en) 2018-09-21 2020-07-09 Carl Zeiss Multisem Gmbh Process for detector alignment when imaging objects using a multi-beam particle microscope, system and computer program product
DE102018007652B4 (en) 2018-09-27 2021-03-25 Carl Zeiss Multisem Gmbh Particle beam system and method for current regulation of single particle beams
DE102018124044B3 (en) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Method for operating a multi-beam particle beam microscope and multi-beam particle beam system
CN111477530B (en) 2019-01-24 2023-05-05 卡尔蔡司MultiSEM有限责任公司 Method for imaging 3D samples using a multi-beam particle microscope
TWI743626B (en) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 System comprising a multi-beam particle microscope, method for imaging a 3d sample layer by layer and computer program product
US10748743B1 (en) * 2019-02-12 2020-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for operating a charged particle device with multiple beamlets
SG11202112463SA (en) * 2019-05-31 2021-12-30 Asml Netherlands Bv Multiple charged-particle beam apparatus and methods of operating the same
JP2022021104A (en) * 2020-07-21 2022-02-02 株式会社日立ハイテク Charged particle beam device
WO2022136064A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Charged particle optical device
JP2022112409A (en) * 2021-01-21 2022-08-02 株式会社ニューフレアテクノロジー Multi-beam image acquisition device and multi-beam image acquisition method
KR102336453B1 (en) * 2021-07-15 2021-12-07 주식회사 에이치비테크놀러지 Apparatus for Discriminating Defects Capable of Implementing Multiple FOV
DE102022114098A1 (en) * 2022-06-03 2023-12-14 Carl Zeiss Multisem Gmbh Multi-beam particle microscope with improved adjustment and method for adjusting the multi-beam particle microscope and computer program product

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117286A (en) * 1997-06-27 1999-01-22 Ando Electric Co Ltd Tunable laser device
JP2001076659A (en) * 1999-09-06 2001-03-23 Nikon Corp Manufacture of charged-particle beam microscope, defect- inspecting device, and semiconductor device
JP2001202912A (en) * 2000-01-21 2001-07-27 Nikon Corp Method of aligning opening in a charged particle beam system, having optical axis
EP1150327B1 (en) 2000-04-27 2018-02-14 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi beam charged particle device
US7129502B2 (en) 2003-03-10 2006-10-31 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
KR101051370B1 (en) * 2003-09-05 2011-07-22 어플라이드 머티리얼즈 이스라엘 리미티드 Particle Light Systems and Devices and Particle Light Components for Such Systems and Devices
GB2412232A (en) * 2004-03-15 2005-09-21 Ims Nanofabrication Gmbh Particle-optical projection system
US9390886B2 (en) 2005-02-17 2016-07-12 Ebara Corporation Electro-optical inspection apparatus using electron beam
KR20070116260A (en) 2005-03-22 2007-12-07 가부시키가이샤 에바라 세이사꾸쇼 Electron beam device
US20090256075A1 (en) * 2005-09-06 2009-10-15 Carl Zeiss Smt Ag Charged Particle Inspection Method and Charged Particle System
JP4878501B2 (en) * 2006-05-25 2012-02-15 株式会社日立ハイテクノロジーズ Charged particle beam application equipment
JP2008008890A (en) * 2006-05-31 2008-01-17 Shimadzu Corp Tft array inspection apparatus and scanning beam device
EP2132763B1 (en) * 2007-02-22 2014-05-07 Applied Materials Israel Ltd. High throughput sem tool
JP5380206B2 (en) 2009-08-27 2014-01-08 株式会社日立ハイテクノロジーズ Scanning electron microscope apparatus and sample inspection method using the same
TW201133534A (en) 2009-09-18 2011-10-01 Mapper Lithography Ip Bv Multiple beam charged particle optical system
JP5963453B2 (en) 2011-03-15 2016-08-03 株式会社荏原製作所 Inspection device
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
JP5832141B2 (en) 2011-05-16 2015-12-16 キヤノン株式会社 Drawing apparatus and article manufacturing method
JP5822535B2 (en) * 2011-05-16 2015-11-24 キヤノン株式会社 Drawing apparatus and article manufacturing method
NL2009053C2 (en) * 2012-06-22 2013-12-24 Univ Delft Tech Apparatus and method for inspecting a surface of a sample.
NL2009696C2 (en) * 2012-10-25 2014-04-29 Univ Delft Tech Apparatus and method for inspecting a surface of a sample.
JP6080540B2 (en) * 2012-12-26 2017-02-15 株式会社ニューフレアテクノロジー Charged particle beam lithography system
DE102013014976A1 (en) * 2013-09-09 2015-03-12 Carl Zeiss Microscopy Gmbh Particle-optical system
EP2879155B1 (en) * 2013-12-02 2018-04-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI
DE102014008383B9 (en) 2014-06-06 2018-03-22 Carl Zeiss Microscopy Gmbh Particle beam system and method of operating a particle optic
CN106034139A (en) 2015-03-10 2016-10-19 鸿富锦精密工业（深圳）有限公司 Data transmission system and data transmission method
US9691588B2 (en) * 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
WO2016145458A1 (en) 2015-03-10 2016-09-15 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US10236156B2 (en) * 2015-03-25 2019-03-19 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9607805B2 (en) * 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
KR102179130B1 (en) * 2015-07-17 2020-11-18 아이엠에스 나노패브릭케이션 게엠베하 Compensation of defective beamlets in a charged-particle multi-beam exposure tool
US9922799B2 (en) * 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
IL256895B (en) * 2015-07-22 2022-08-01 Hermes Microvision Inc Apparatus of plural charged-particle beams
WO2017095908A1 (en) * 2015-11-30 2017-06-08 Hermes Microvision Inc. Apparatus of plural charged-particle beams
KR102480232B1 (en) 2016-01-27 2022-12-22 에이에스엠엘 네델란즈 비.브이. Apparatus of Plural Charged-Particle Beams
CN116313708A (en) * 2016-12-30 2023-06-23 Asml荷兰有限公司 Apparatus using multiple charged particle beams
EP3659172A1 (en) * 2017-07-28 2020-06-03 ASML Netherlands B.V. Systems and methods for compensating dispersion of a beam separator in a multi-beam apparatus
KR102378925B1 (en) * 2017-09-19 2022-03-25 에이에스엠엘 네델란즈 비.브이. Charged Particle Beam Apparatus, and Operating Systems and Methods of the Apparatus
JP2021532545A (en) * 2018-08-09 2021-11-25 エーエスエムエル ネザーランズ ビー．ブイ． Device for multiple charged particle beams

Also Published As

Publication number Publication date
JP6989658B2 (en) 2022-01-05
KR20230003379A (en) 2023-01-05
CN113192815A (en) 2021-07-30
JP6724145B2 (en) 2020-07-15
USRE49784E1 (en) 2024-01-02
KR102211668B1 (en) 2021-02-05
US20170213688A1 (en) 2017-07-27
EP3408829A1 (en) 2018-12-05
IL289373B1 (en) 2023-03-01
KR102480232B1 (en) 2022-12-22
US10062541B2 (en) 2018-08-28
KR20180108720A (en) 2018-10-04
JP2019509586A (en) 2019-04-04
IL289373A (en) 2022-02-01
EP3408829A4 (en) 2019-10-23
CN108885187B (en) 2021-05-25
JP2020174046A (en) 2020-10-22
WO2017132435A1 (en) 2017-08-03
IL260629B (en) 2022-02-01
KR20210016064A (en) 2021-02-10
CN108885187A (en) 2018-11-23
EP3408829B1 (en) 2023-10-25
IL289373B2 (en) 2023-07-01

Similar Documents

Publication Publication Date Title
SG11201806100PA (en) Apparatus of plural charged-particle beams
SG11201804208VA (en) Apparatus of plural charged-particle beams
SG11201809913PA (en) Methods for detecting target nucleic acids in a sample
SG11201803983UA (en) Transformable tagging compositions, methods, and processes incorporating same
SG11201407294UA (en) Contamination identification system
SG11201811336TA (en) Method for producing an electrode catalyst from a perovskite metal oxide
SG11201906814YA (en) Systems and methods for automated preparation of biological specimens
SG11201811173VA (en) Cleanroom control system and method
SG11201809604RA (en) Remote elevator monitoring and inspection
SG11201908990SA (en) Advanced optical sensor, system, and methodologies for etch processing monitoring
SG11201908847TA (en) Apparatuses, systems and methods for imaging flow cytometry
SG11201805521XA (en) Method for quantification of purity of sub-visible particle samples
SG11201807720TA (en) Methods and systems for determining antibiotic susceptibility
SG11201407650VA (en) Composition and process for stripping photoresist from a surface including titanium nitride
SG11201809685XA (en) A method of enhancing the performance of chromatography methods for purification of proteins
SG11201900901QA (en) Laser ablation system
SG11201806432PA (en) Methods for assessing risk of developing colorectal cancer
SG11201811329UA (en) Spheroids including biologically-relevant materials and related methods
SG11201408171SA (en) Fbxo3 inhibitors
SG11201809356YA (en) Multilayer coating and process of preparing the multilayer coating
SG11201809473QA (en) Humanized anti-basigin antibodies and the use thereof
SG11201907896PA (en) Optical system for monitoring the movement of people through a passageway
SG11201810682PA (en) Dark field wafer nano-defect inspection system with a singular beam
SG11201808272QA (en) Determining displacement between seismic images using optical flow
SG11201810589RA (en) System and method for performing an in situ repair of an internal component of a gas turbine engine