SG11201811618RA - Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device - Google Patents
Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA SG 11201811618R A SG11201811618R A SG 11201811618RA
- Authority
- SG
- Singapore
- Prior art keywords
- pellicle
- light exposure
- film
- semiconductor device
- frame
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 239000002041 carbon nanotube Substances 0.000 abstract 4
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 4
- 238000001900 extreme ultraviolet lithography Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/159—Carbon nanotubes single-walled
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/30—Purity
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016133062 | 2016-07-05 | ||
| PCT/JP2017/024335 WO2018008594A1 (fr) | 2016-07-05 | 2017-07-03 | Film de pellicule, cadre de pellicule, pellicule, leur procédé de production, plaque originale pour exposition à la lumière, appareil d'exposition à la lumière et procédé de fabrication d'un dispositif semi-conducteur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201811618RA true SG11201811618RA (en) | 2019-01-30 |
Family
ID=60912915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201811618RA SG11201811618RA (en) | 2016-07-05 | 2017-07-03 | Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11042085B2 (fr) |
| EP (1) | EP3483655A4 (fr) |
| JP (1) | JP6781864B2 (fr) |
| KR (3) | KR20190003752A (fr) |
| CN (4) | CN116594257A (fr) |
| SG (1) | SG11201811618RA (fr) |
| TW (3) | TWI744348B (fr) |
| WO (1) | WO2018008594A1 (fr) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3483655A4 (fr) | 2016-07-05 | 2020-02-26 | Mitsui Chemicals, Inc. | Film de pellicule, cadre de pellicule, pellicule, leur procédé de production, plaque originale pour exposition à la lumière, appareil d'exposition à la lumière et procédé de fabrication d'un dispositif semi-conducteur |
| EP3404487B1 (fr) * | 2017-05-15 | 2021-12-01 | IMEC vzw | Procédé de formation d'une membrane de pellicule ä nanotubes de carbone |
| JP7019472B2 (ja) * | 2018-03-22 | 2022-02-15 | 三井化学株式会社 | カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法 |
| JP7255586B2 (ja) * | 2018-03-29 | 2023-04-11 | 日本ゼオン株式会社 | 炭素膜の製造方法 |
| WO2019211083A1 (fr) | 2018-05-04 | 2019-11-07 | Asml Netherlands B.V. | Pellicule pour lithographie euv |
| CN112154376B (zh) | 2018-06-12 | 2023-08-18 | 三井化学株式会社 | 防护膜组件用支撑框及其制造方法、防护膜组件及曝光原版和曝光装置 |
| US10871721B2 (en) | 2018-09-28 | 2020-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blank for lithography and method of manufacturing the same |
| JP7040427B2 (ja) * | 2018-12-03 | 2022-03-23 | 信越化学工業株式会社 | ペリクル、ペリクル付露光原版、露光方法及び半導体の製造方法 |
| EP3674797B1 (fr) | 2018-12-28 | 2021-05-05 | IMEC vzw | Scanner d'euvl |
| JP2020160345A (ja) * | 2019-03-27 | 2020-10-01 | 三井化学株式会社 | ペリクル自立膜の製造方法、ペリクルの製造方法、および半導体装置の製造方法 |
| CN114144728A (zh) * | 2019-04-16 | 2022-03-04 | 信越化学工业株式会社 | 防护薄膜用粘合剂、防护薄膜、带防护薄膜的曝光原版、半导体装置的制造方法、液晶显示板的制造方法、曝光原版的再生方法及剥离残渣减少方法 |
| EP3764163B1 (fr) * | 2019-07-11 | 2023-04-12 | IMEC vzw | Dispositif de lithographie par ultraviolets extrêmes |
| KR102242341B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 펠리클 프레임의 제조방법 및 펠리클의 제조장치 |
| KR102242356B1 (ko) * | 2019-08-05 | 2021-04-20 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클, 그 제조방법, 펠리클을 포함하는 노광장치 및 펠리클의 제조장치 |
| WO2021080294A1 (fr) * | 2019-10-22 | 2021-04-29 | 주식회사 에스앤에스텍 | Pellicule pour lithographie par ultraviolets extrêmes utilisant un nanotube de nitrure de bore et son procédé de production |
| KR102273266B1 (ko) * | 2019-10-23 | 2021-07-06 | 주식회사 에프에스티 | 일체화된 프레임과 멤브레인을 포함하는 펠리클의 제조방법 |
| JP7434810B2 (ja) | 2019-11-05 | 2024-02-21 | Ｔｏｐｐａｎホールディングス株式会社 | ペリクル膜及びペリクル |
| EP3842861A1 (fr) * | 2019-12-23 | 2021-06-30 | Imec VZW | Procédé de formation d'une pellicule d'euvl |
| KR20220116021A (ko) * | 2020-02-26 | 2022-08-19 | 미쯔이가가꾸가부시끼가이샤 | 펠리클막, 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법 및 반도체 장치의 제조 방법 |
| JP2021135403A (ja) | 2020-02-27 | 2021-09-13 | 凸版印刷株式会社 | ペリクル膜、ペリクル、膜、グラフェンシート及びその製造方法 |
| US11443916B2 (en) * | 2020-04-15 | 2022-09-13 | Kla Corporation | Thin pellicle material for protection of solid-state electron detectors |
| US20230194977A1 (en) * | 2020-04-17 | 2023-06-22 | Mitsui Chemicals, Inc. | Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography |
| KR102229118B1 (ko) * | 2020-07-08 | 2021-03-18 | 솔브레인 주식회사 | 펠리클 보호 박막 형성용 성장 억제제, 이를 이용한 펠리클 보호 박막 형성 방법 및 이로부터 제조된 마스크 |
| KR102482649B1 (ko) * | 2020-07-09 | 2022-12-29 | (주)에프에스티 | 극자외선 리소그라피용 펠리클의 제조방법 |
| KR102405669B1 (ko) * | 2020-07-16 | 2022-06-07 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| KR102514088B1 (ko) * | 2020-08-04 | 2023-03-27 | 주식회사 에스앤에스텍 | 1차원 나노물질을 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
| KR102585401B1 (ko) * | 2020-11-17 | 2023-10-10 | 주식회사 에스앤에스텍 | 독립된 박막 형태의 캡핑층을 갖는 극자외선 리소그래피용 펠리클 및 그 제조방법 |
| KR102482650B1 (ko) * | 2021-02-25 | 2022-12-29 | (주)에프에스티 | 질화 붕소 나노 구조 층을 포함하는 극자외선 리소그라피용 펠리클 막 및 그 제조방법 |
| KR20230146663A (ko) | 2021-03-31 | 2023-10-19 | 미쯔이가가꾸가부시끼가이샤 | 펠리클, 노광 원판, 노광 장치, 펠리클의 제조 방법, 및 반도체 장치의 제조 방법 |
| US20220365420A1 (en) * | 2021-05-12 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer pellicle membrane |
| JP2022174894A (ja) * | 2021-05-12 | 2022-11-25 | 日本電気株式会社 | ボロメータ及びその製造方法 |
| JP2022191120A (ja) * | 2021-06-15 | 2022-12-27 | 信越化学工業株式会社 | 気圧調整が容易な露光用ペリクル |
| KR20230012708A (ko) | 2021-07-16 | 2023-01-26 | 인투워드 주식회사 | Euv용 펠리클 및 그 제조 방법 |
| CN117751325A (zh) * | 2021-07-30 | 2024-03-22 | 信越化学工业株式会社 | 防护薄膜、防护膜、带有防护膜的曝光原版、曝光方法、半导体的制造方法和液晶显示板的制造方法 |
| US11860534B2 (en) * | 2021-08-06 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for an EUV lithography mask and a method of manufacturing thereof |
| EP4361092A1 (fr) * | 2021-08-26 | 2024-05-01 | Mitsui Chemicals, Inc. | Film de pellicule, pellicule, plaque originale d'exposition, dispositif d'exposition et méthode de fabrication de film de pellicule |
| EP4202546A1 (fr) * | 2021-12-22 | 2023-06-28 | Imec VZW | Pellicule euv |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3335330B2 (ja) | 1999-08-09 | 2002-10-15 | 株式会社東芝 | カーボンナノチューブの製造方法およびカーボンナノチューブ膜の製造方法 |
| JP4296328B2 (ja) | 2001-11-28 | 2009-07-15 | 東レ株式会社 | 中空状ナノファイバー含有組成物及び中空状ナノファイバーの製造法 |
| SG118242A1 (en) * | 2003-04-30 | 2006-01-27 | Asml Netherlands Bv | Lithographic apparatus device manufacturing methods mask and method of characterising a mask and/or pellicle |
| CN101913591B (zh) | 2004-07-27 | 2012-11-14 | 独立行政法人产业技术综合研究所 | 单层碳纳米管以及取向单层碳纳米管块结构体以及它们的制造方法、装置以及用途 |
| JP2006069165A (ja) | 2004-09-06 | 2006-03-16 | Japan Science & Technology Agency | カーボンナノチューブ複合シート、およびその製造方法 |
| JP5028744B2 (ja) | 2005-02-15 | 2012-09-19 | 富士通株式会社 | カーボンナノチューブの形成方法および電子デバイスの製造方法 |
| US8329135B2 (en) | 2006-01-06 | 2012-12-11 | National Institute Of Advanced Industrial Science And Technology | Aligned carbon nanotube bulk structure having portions different in density |
| US7767985B2 (en) * | 2006-12-26 | 2010-08-03 | Globalfoundries Inc. | EUV pellicle and method for fabricating semiconductor dies using same |
| CN101284662B (zh) * | 2007-04-13 | 2011-01-05 | 清华大学 | 碳纳米管薄膜的制备方法 |
| JP5266907B2 (ja) * | 2007-06-29 | 2013-08-21 | 東レ株式会社 | カーボンナノチューブ集合体、分散体および導電性フィルム |
| CN101480858B (zh) * | 2008-01-11 | 2014-12-10 | 清华大学 | 碳纳米管复合材料及其制备方法 |
| US8193430B2 (en) * | 2008-01-03 | 2012-06-05 | The University Of Connecticut | Methods for separating carbon nanotubes |
| US8546067B2 (en) * | 2008-03-21 | 2013-10-01 | The Board Of Trustees Of The University Of Illinois | Material assisted laser ablation |
| NL2003256A1 (nl) | 2008-08-06 | 2010-02-09 | Asml Netherlands Bv | Optical element for a lithographic apparatus, lithographic apparatus comprising such optical element and method for making the optical element. |
| US8351220B2 (en) | 2009-01-28 | 2013-01-08 | Florida State University Research Foundation | Electromagnetic interference shielding structure including carbon nanotube or nanofiber films and methods |
| JP5608954B2 (ja) * | 2010-11-05 | 2014-10-22 | 独立行政法人産業技術総合研究所 | Ｃｎｔ分散液、ｃｎｔ成形体、ｃｎｔ組成物、ｃｎｔ集合体及びそれらの製造方法 |
| CN102796991B (zh) * | 2011-05-27 | 2014-08-20 | 清华大学 | 石墨烯碳纳米管复合膜结构的制备方法 |
| WO2014136981A1 (fr) * | 2013-03-08 | 2014-09-12 | 国立大学法人九州大学 | Procédé de séparation de nanotube de carbone simple paroi, métallique à partir d'un nanotube de carbone simple paroi, semi-conducteur |
| KR101699655B1 (ko) | 2013-03-15 | 2017-01-24 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 펠리클막 및 펠리클 |
| CN103246157A (zh) * | 2013-05-21 | 2013-08-14 | 上海和辉光电有限公司 | 防尘薄膜框架、光学掩膜版及其安装方法 |
| KR101707763B1 (ko) | 2013-05-24 | 2017-02-16 | 미쯔이가가꾸가부시끼가이샤 | 펠리클 및 이것을 포함하는 ｅｕｖ 노광 장치 |
| JP2014227331A (ja) * | 2013-05-27 | 2014-12-08 | 日立造船株式会社 | カーボンナノチューブシートおよびその製造方法 |
| US20160367971A1 (en) * | 2013-07-30 | 2016-12-22 | Northeastern University | Catalyst and Method for Synthesis of Carbon Nanomaterials |
| JP6279722B2 (ja) | 2014-05-19 | 2018-02-14 | 三井化学株式会社 | ペリクル膜、ペリクル、露光原版、露光装置及び半導体装置の製造方法 |
| EP3196699A4 (fr) | 2014-09-19 | 2018-05-16 | Mitsui Chemicals, Inc. | Pellicule, procédé de fabrication de cette pellicule et procédé d'exposition |
| TWI693466B (zh) | 2014-09-19 | 2020-05-11 | 日商三井化學股份有限公司 | 防塵薄膜、防塵薄膜的製造方法及使用防塵薄膜的曝光方法 |
| KR20230092024A (ko) * | 2014-11-17 | 2023-06-23 | 에이에스엠엘 네델란즈 비.브이. | 장치 |
| JP2016133062A (ja) | 2015-01-20 | 2016-07-25 | いすゞ自動車株式会社 | 排気浄化システム |
| KR102345543B1 (ko) | 2015-08-03 | 2021-12-30 | 삼성전자주식회사 | 펠리클 및 이를 포함하는 포토마스크 조립체 |
| JP6649100B2 (ja) | 2016-02-04 | 2020-02-19 | 日立造船株式会社 | Ｃｎｔ積層体の製造方法およびカーボンナノチューブ撚糸の製造方法 |
| EP3483655A4 (fr) | 2016-07-05 | 2020-02-26 | Mitsui Chemicals, Inc. | Film de pellicule, cadre de pellicule, pellicule, leur procédé de production, plaque originale pour exposition à la lumière, appareil d'exposition à la lumière et procédé de fabrication d'un dispositif semi-conducteur |
| EP3404487B1 (fr) * | 2017-05-15 | 2021-12-01 | IMEC vzw | Procédé de formation d'une membrane de pellicule ä nanotubes de carbone |
-
2017
- 2017-07-03 EP EP17824197.2A patent/EP3483655A4/fr active Pending
- 2017-07-03 JP JP2018526366A patent/JP6781864B2/ja active Active
- 2017-07-03 CN CN202310652312.XA patent/CN116594257A/zh active Pending
- 2017-07-03 KR KR1020187035244A patent/KR20190003752A/ko active Application Filing
- 2017-07-03 CN CN202310651908.8A patent/CN116609996A/zh active Pending
- 2017-07-03 KR KR1020227041813A patent/KR20220165812A/ko not_active Application Discontinuation
- 2017-07-03 KR KR1020227041816A patent/KR20220162888A/ko not_active Application Discontinuation
- 2017-07-03 CN CN202310652861.7A patent/CN116594258A/zh active Pending
- 2017-07-03 SG SG11201811618RA patent/SG11201811618RA/en unknown
- 2017-07-03 CN CN201780038819.9A patent/CN109416503B/zh active Active
- 2017-07-03 WO PCT/JP2017/024335 patent/WO2018008594A1/fr unknown
- 2017-07-04 TW TW106122342A patent/TWI744348B/zh active
- 2017-07-04 TW TW111149066A patent/TW202321146A/zh unknown
- 2017-07-04 TW TW110136705A patent/TW202204252A/zh unknown
-
2018
- 2018-12-18 US US16/224,028 patent/US11042085B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2018008594A1 (ja) | 2019-04-11 |
| TW202204252A (zh) | 2022-02-01 |
| CN116594258A (zh) | 2023-08-15 |
| TW202321146A (zh) | 2023-06-01 |
| CN109416503A (zh) | 2019-03-01 |
| US11042085B2 (en) | 2021-06-22 |
| EP3483655A4 (fr) | 2020-02-26 |
| WO2018008594A1 (fr) | 2018-01-11 |
| TW201821359A (zh) | 2018-06-16 |
| EP3483655A1 (fr) | 2019-05-15 |
| JP6781864B2 (ja) | 2020-11-11 |
| CN116609996A (zh) | 2023-08-18 |
| US20190129300A1 (en) | 2019-05-02 |
| CN109416503B (zh) | 2023-06-09 |
| KR20220165812A (ko) | 2022-12-15 |
| KR20220162888A (ko) | 2022-12-08 |
| KR20190003752A (ko) | 2019-01-09 |
| CN116594257A (zh) | 2023-08-15 |
| TWI744348B (zh) | 2021-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11201811618RA (en) | Pellicle film, pellicle frame, pellicle, method for producing same, original plate for light exposure, light exposure apparatus and method for manufacturing semiconductor device | |
| EP3809202A4 (fr) | Cadre de support de pellicule, pellicule, procédé de fabrication de cadre de support de pellicule, et plaque originale d'exposition et dispositif d'exposition utilisant une pellicule | |
| TW201614362A (en) | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device | |
| JP2015148807A5 (ja) | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 | |
| EP4286941A3 (fr) | Appareil de fixation de pellicule | |
| SG11201907482YA (en) | Pellicle, exposure original plate, exposure device, and semiconductor device manufacturing method | |
| JP2011511465A5 (fr) | ||
| TW200619832A (en) | Lithographic apparatus, method, and computer program product for generating a mask pattern and device manufacturing method using same | |
| JP5806692B2 (ja) | リソグラフィ原版検査方法 | |
| JP2015511769A5 (fr) | ||
| JP2016122684A5 (fr) | ||
| TW200734830A (en) | Lithogrpahic apparatus and device manufacturing method using multiple exposures and multiple exposure types | |
| WO2010030018A3 (fr) | Procédé de formation de motif et procédé de production de dispositif | |
| JP2008310232A5 (fr) | ||
| Khusnatdinov et al. | High-throughput jet and flash imprint lithography for advanced semiconductor memory | |
| KR101291719B1 (ko) | 균일 가압구조를 가진 대면적 임프린팅 장치 | |
| WO2015124457A8 (fr) | Appareil et procédé lithographiques | |
| Hatano et al. | NIL defect performance toward high volume mass production | |
| Lai et al. | Computational lithography platform for 193i-guided directed self-assembly | |
| TW200732835A (en) | Pellicle for exposure apparatus having large numerical aperture | |
| JP2013219089A5 (fr) | ||
| Ye et al. | Defect reduction for semiconductor memory applications using jet and flash imprint lithography | |
| EP2120091A3 (fr) | Procédé d'extraction de pellicule et appareil d'extraction utilisé avec celui-ci | |
| US10434686B2 (en) | Three-dimensional article and method of making the same | |
| Cadarso et al. | Direct imprinting of organic–inorganic hybrid materials into high aspect ratio sub-100 nm structures |