SG11201810919UA - Engineered substrate structure for power and rf applications - Google Patents
Engineered substrate structure for power and rf applicationsInfo
- Publication number
- SG11201810919UA SG11201810919UA SG11201810919UA SG11201810919UA SG11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA SG 11201810919U A SG11201810919U A SG 11201810919UA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- layer coupled
- quora
- santa clara
- california
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L21/02538—Group 13/15 materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Peptides Or Proteins (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662350077P | 2016-06-14 | 2016-06-14 | |
US201662350084P | 2016-06-14 | 2016-06-14 | |
PCT/US2017/037252 WO2017218536A1 (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201810919UA true SG11201810919UA (en) | 2019-01-30 |
Family
ID=60664230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201810919UA SG11201810919UA (en) | 2016-06-14 | 2017-06-13 | Engineered substrate structure for power and rf applications |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP3469119A4 (ja) |
JP (4) | JP6626607B2 (ja) |
KR (1) | KR102361057B1 (ja) |
CN (2) | CN114256068A (ja) |
SG (1) | SG11201810919UA (ja) |
TW (2) | TWI793755B (ja) |
WO (1) | WO2017218536A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017218536A1 (en) * | 2016-06-14 | 2017-12-21 | Quora Technology, Inc. | Engineered substrate structure for power and rf applications |
US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
US10622468B2 (en) * | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
US10734303B2 (en) * | 2017-11-06 | 2020-08-04 | QROMIS, Inc. | Power and RF devices implemented using an engineered substrate structure |
US10586844B2 (en) * | 2018-01-23 | 2020-03-10 | Texas Instruments Incorporated | Integrated trench capacitor formed in an epitaxial layer |
TWI692869B (zh) * | 2019-05-03 | 2020-05-01 | 世界先進積體電路股份有限公司 | 基底及其製造方法 |
CN111987140A (zh) * | 2019-05-21 | 2020-11-24 | 世界先进积体电路股份有限公司 | 基底及其制造方法 |
JP7319227B2 (ja) | 2020-05-11 | 2023-08-01 | 信越化学工業株式会社 | Iii-v族化合物結晶用ベース基板及びその製造方法 |
KR20230020968A (ko) | 2020-06-09 | 2023-02-13 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 |
JP2022012558A (ja) | 2020-07-01 | 2022-01-17 | 信越化学工業株式会社 | 大口径iii族窒化物系エピタキシャル成長用基板とその製造方法 |
KR102446604B1 (ko) * | 2021-01-04 | 2022-09-26 | 한국과학기술원 | 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법 |
WO2022168572A1 (ja) | 2021-02-05 | 2022-08-11 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP2022131086A (ja) | 2021-02-26 | 2022-09-07 | 信越半導体株式会社 | 窒化物半導体基板およびその製造方法 |
WO2022191079A1 (ja) * | 2021-03-10 | 2022-09-15 | 信越化学工業株式会社 | エピタキシャル成長用種基板およびその製造方法、ならびに半導体基板およびその製造方法 |
JP7334869B2 (ja) * | 2021-06-08 | 2023-08-29 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JP2023025432A (ja) * | 2021-08-10 | 2023-02-22 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
WO2023047864A1 (ja) * | 2021-09-21 | 2023-03-30 | 信越半導体株式会社 | 窒化物半導体基板及びその製造方法 |
JPWO2023063278A1 (ja) * | 2021-10-15 | 2023-04-20 | ||
JPWO2023063046A1 (ja) * | 2021-10-15 | 2023-04-20 | ||
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TW202203473A (zh) | 2022-01-16 |
JP6626607B2 (ja) | 2019-12-25 |
WO2017218536A1 (en) | 2017-12-21 |
EP3469119A1 (en) | 2019-04-17 |
JP2022058405A (ja) | 2022-04-12 |
EP3469119A4 (en) | 2020-02-26 |
TWI743136B (zh) | 2021-10-21 |
TW202322418A (zh) | 2023-06-01 |
JP7001660B2 (ja) | 2022-01-19 |
KR102361057B1 (ko) | 2022-02-08 |
CN109844184B (zh) | 2021-11-30 |
JP2019523994A (ja) | 2019-08-29 |
CN114256068A (zh) | 2022-03-29 |
JP7416556B2 (ja) | 2024-01-17 |
JP2023182643A (ja) | 2023-12-26 |
JP2020074399A (ja) | 2020-05-14 |
TWI793755B (zh) | 2023-02-21 |
CN109844184A (zh) | 2019-06-04 |
KR20190019122A (ko) | 2019-02-26 |
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