TWI793755B - 用於功率及rf應用的工程基板結構 - Google Patents

用於功率及rf應用的工程基板結構 Download PDF

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TWI793755B
TWI793755B TW110133509A TW110133509A TWI793755B TW I793755 B TWI793755 B TW I793755B TW 110133509 A TW110133509 A TW 110133509A TW 110133509 A TW110133509 A TW 110133509A TW I793755 B TWI793755 B TW I793755B
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layer
epitaxial
silicon
layers
adhesive layer
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TW202203473A (zh
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弗拉基米爾 歐迪諾布魯朵夫
山姆 巴斯賽利
薛瑞 法倫斯
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美商克若密斯股份有限公司
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    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
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TW110133509A 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構 TWI793755B (zh)

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US201662350077P 2016-06-14 2016-06-14
US201662350084P 2016-06-14 2016-06-14
US62/350,084 2016-06-14
US62/350,077 2016-06-14

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TW106119602A TWI743136B (zh) 2016-06-14 2017-06-13 用於功率及rf應用的工程基板結構
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EP (1) EP3469119A4 (ja)
JP (4) JP6626607B2 (ja)
KR (1) KR102361057B1 (ja)
CN (2) CN109844184B (ja)
SG (1) SG11201810919UA (ja)
TW (3) TWI839076B (ja)
WO (1) WO2017218536A1 (ja)

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Publication number Priority date Publication date Assignee Title
US10297445B2 (en) 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
TWI839076B (zh) * 2016-06-14 2024-04-11 美商克若密斯股份有限公司 用於功率及rf應用的工程基板結構
US10622468B2 (en) 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10734303B2 (en) * 2017-11-06 2020-08-04 QROMIS, Inc. Power and RF devices implemented using an engineered substrate structure
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
TWI692869B (zh) * 2019-05-03 2020-05-01 世界先進積體電路股份有限公司 基底及其製造方法
CN111987140A (zh) * 2019-05-21 2020-11-24 世界先进积体电路股份有限公司 基底及其制造方法
JP7319227B2 (ja) 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
KR20230020968A (ko) 2020-06-09 2023-02-13 신에쓰 가가꾸 고교 가부시끼가이샤 Iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법
JP2022012558A (ja) 2020-07-01 2022-01-17 信越化学工業株式会社 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
KR102446604B1 (ko) * 2021-01-04 2022-09-26 한국과학기술원 스트레인드 채널 성장 구조, 및 그를 이용한 스트레인드 채널 및 소자 제조 방법
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