SG11201808666PA - Charge extraction from ferroelectric memory cell - Google Patents
Charge extraction from ferroelectric memory cellInfo
- Publication number
- SG11201808666PA SG11201808666PA SG11201808666PA SG11201808666PA SG11201808666PA SG 11201808666P A SG11201808666P A SG 11201808666PA SG 11201808666P A SG11201808666P A SG 11201808666PA SG 11201808666P A SG11201808666P A SG 11201808666PA SG 11201808666P A SG11201808666P A SG 11201808666PA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- memory cell
- capacitor
- ferroelectric
- digit line
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2255—Bit-line or column circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/090,789 US10192606B2 (en) | 2016-04-05 | 2016-04-05 | Charge extraction from ferroelectric memory cell using sense capacitors |
| PCT/US2017/023907 WO2017176467A2 (en) | 2016-04-05 | 2017-03-23 | Charge extraction from ferroelectric memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201808666PA true SG11201808666PA (en) | 2018-11-29 |
Family
ID=59961179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201808666PA SG11201808666PA (en) | 2016-04-05 | 2017-03-23 | Charge extraction from ferroelectric memory cell |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US10192606B2 (ja) |
| EP (1) | EP3440674A4 (ja) |
| JP (1) | JP6884158B2 (ja) |
| KR (1) | KR102282888B1 (ja) |
| CN (1) | CN109074836B (ja) |
| SG (1) | SG11201808666PA (ja) |
| TW (1) | TWI636456B (ja) |
| WO (1) | WO2017176467A2 (ja) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9881661B2 (en) * | 2016-06-03 | 2018-01-30 | Micron Technology, Inc. | Charge mirror-based sensing for ferroelectric memory |
| US10083973B1 (en) * | 2017-08-09 | 2018-09-25 | Micron Technology, Inc. | Apparatuses and methods for reading memory cells |
| US10529410B2 (en) | 2017-12-18 | 2020-01-07 | Micron Technology, Inc. | Techniques for accessing an array of memory cells to reduce parasitic coupling |
| US10762944B2 (en) | 2017-12-18 | 2020-09-01 | Micron Technology, Inc. | Single plate configuration and memory array operation |
| US10446232B2 (en) * | 2017-12-19 | 2019-10-15 | Micron Technology, Inc. | Charge separation for memory sensing |
| US10504576B2 (en) * | 2017-12-19 | 2019-12-10 | Micron Technology, Inc. | Current separation for memory sensing |
| US10431301B2 (en) | 2017-12-22 | 2019-10-01 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
| US10566052B2 (en) * | 2017-12-22 | 2020-02-18 | Micron Technology, Inc. | Auto-referenced memory cell read techniques |
| US10388353B1 (en) | 2018-03-16 | 2019-08-20 | Micron Technology, Inc. | Canceling memory cell variations by isolating digit lines |
| US10667621B2 (en) * | 2018-04-19 | 2020-06-02 | Micron Technology, Inc. | Multi-stage memory sensing |
| US11127449B2 (en) | 2018-04-25 | 2021-09-21 | Micron Technology, Inc. | Sensing a memory cell |
| US10446214B1 (en) | 2018-08-13 | 2019-10-15 | Micron Technology, Inc. | Sense amplifier with split capacitors |
| US10726917B1 (en) * | 2019-01-23 | 2020-07-28 | Micron Technology, Inc. | Techniques for read operations |
| US11017831B2 (en) * | 2019-07-15 | 2021-05-25 | Micron Technology, Inc. | Ferroelectric memory cell access |
| US11289146B2 (en) | 2019-08-27 | 2022-03-29 | Micron Technology, Inc. | Word line timing management |
| US11152049B1 (en) * | 2020-06-08 | 2021-10-19 | Micron Technology, Inc. | Differential sensing for a memory device |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5487030A (en) | 1994-08-26 | 1996-01-23 | Hughes Aircraft Company | Ferroelectric interruptible read memory |
| US6031754A (en) * | 1998-11-02 | 2000-02-29 | Celis Semiconductor Corporation | Ferroelectric memory with increased switching voltage |
| KR100381023B1 (ko) | 1999-05-13 | 2003-04-23 | 주식회사 하이닉스반도체 | 비트라인 차지펌핑 회로를 갖는 강유전체기억소자 |
| DE10019481C1 (de) * | 2000-04-19 | 2001-11-29 | Infineon Technologies Ag | Schaltungsanordnung zum Auslesen einer Speicherzelle mit einem ferroelektrischen Kondensator |
| TW465071B (en) * | 2000-09-21 | 2001-11-21 | Acer Comm & Amp Multimedia Inc | Protection loop for horizontal transistor |
| JP4031904B2 (ja) * | 2000-10-31 | 2008-01-09 | 富士通株式会社 | データ読み出し回路とデータ読み出し方法及びデータ記憶装置 |
| US6577525B2 (en) | 2001-08-28 | 2003-06-10 | Micron Technology, Inc. | Sensing method and apparatus for resistance memory device |
| US6459609B1 (en) | 2001-12-13 | 2002-10-01 | Ramtron International Corporation | Self referencing 1T/1C ferroelectric random access memory |
| US6704218B2 (en) * | 2002-04-02 | 2004-03-09 | Agilent Technologies, Inc. | FeRAM with a single access/multiple-comparison operation |
| US6856535B2 (en) | 2003-01-21 | 2005-02-15 | Texas Instruments Incorporated | Reference voltage generator for ferroelectric memory |
| US6819601B2 (en) | 2003-03-07 | 2004-11-16 | Texas Instruments Incorporated | Programmable reference for 1T/1C ferroelectric memories |
| AU2003227479A1 (en) * | 2003-04-10 | 2004-11-04 | Fujitsu Limited | Ferroelectric memory and method for reading its data |
| US7227769B2 (en) * | 2004-03-08 | 2007-06-05 | Fujitsu Limited | Semiconductor memory |
| JP4157528B2 (ja) * | 2004-03-08 | 2008-10-01 | 富士通株式会社 | 半導体メモリ |
| JP4638193B2 (ja) * | 2004-09-24 | 2011-02-23 | パトレネラ キャピタル リミテッド， エルエルシー | メモリ |
| JP4647313B2 (ja) * | 2005-01-06 | 2011-03-09 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| JP4452631B2 (ja) * | 2005-01-21 | 2010-04-21 | パトレネラ キャピタル リミテッド， エルエルシー | メモリ |
| JP4186119B2 (ja) * | 2005-07-27 | 2008-11-26 | セイコーエプソン株式会社 | 強誘電体メモリ装置 |
| JP4305960B2 (ja) * | 2005-12-28 | 2009-07-29 | セイコーエプソン株式会社 | 強誘電体メモリ装置 |
| JP4996177B2 (ja) * | 2006-08-30 | 2012-08-08 | 富士通セミコンダクター株式会社 | 半導体記憶装置、およびデータ読み出し方法 |
| JP2008305469A (ja) * | 2007-06-06 | 2008-12-18 | Toshiba Corp | 半導体記憶装置 |
| WO2009034603A1 (ja) * | 2007-09-14 | 2009-03-19 | Fujitsu Microelectronics Limited | 半導体メモリ |
| JP2009301658A (ja) | 2008-06-13 | 2009-12-24 | Seiko Epson Corp | 強誘電体記憶装置、強誘電体記憶装置の駆動方法および電子機器 |
| CN102197482B (zh) * | 2008-10-27 | 2013-09-18 | Nxp股份有限公司 | 对铁电mim电容器的非对称电容滞后的产生和使用 |
| US8130580B1 (en) * | 2010-09-03 | 2012-03-06 | Atmel Corporation | Low power sense amplifier for reading memory |
| JP5156069B2 (ja) | 2010-09-17 | 2013-03-06 | 株式会社東芝 | 強誘電体メモリ |
| US9786346B2 (en) * | 2015-05-20 | 2017-10-10 | Micron Technology, Inc. | Virtual ground sensing circuitry and related devices, systems, and methods for crosspoint ferroelectric memory |
| US9552864B1 (en) * | 2016-03-11 | 2017-01-24 | Micron Technology, Inc. | Offset compensation for ferroelectric memory cell sensing |
-
2016
- 2016-04-05 US US15/090,789 patent/US10192606B2/en active Active
-
2017
- 2017-03-23 KR KR1020187031651A patent/KR102282888B1/ko active IP Right Grant
- 2017-03-23 CN CN201780020937.7A patent/CN109074836B/zh active Active
- 2017-03-23 EP EP17779519.2A patent/EP3440674A4/en not_active Withdrawn
- 2017-03-23 JP JP2018551984A patent/JP6884158B2/ja active Active
- 2017-03-23 SG SG11201808666PA patent/SG11201808666PA/en unknown
- 2017-03-23 WO PCT/US2017/023907 patent/WO2017176467A2/en active Application Filing
- 2017-03-31 TW TW106111026A patent/TWI636456B/zh active
-
2018
- 2018-11-27 US US16/201,329 patent/US11322191B2/en active Active
- 2018-11-27 US US16/201,351 patent/US11087816B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102282888B1 (ko) | 2021-07-29 |
| JP6884158B2 (ja) | 2021-06-09 |
| CN109074836A (zh) | 2018-12-21 |
| WO2017176467A3 (en) | 2018-08-16 |
| TW201802806A (zh) | 2018-01-16 |
| CN109074836B (zh) | 2022-08-16 |
| EP3440674A4 (en) | 2019-12-11 |
| KR20180121697A (ko) | 2018-11-07 |
| TWI636456B (zh) | 2018-09-21 |
| US11087816B2 (en) | 2021-08-10 |
| EP3440674A2 (en) | 2019-02-13 |
| US20190096466A1 (en) | 2019-03-28 |
| US20190096467A1 (en) | 2019-03-28 |
| US10192606B2 (en) | 2019-01-29 |
| WO2017176467A2 (en) | 2017-10-12 |
| US11322191B2 (en) | 2022-05-03 |
| JP2019518300A (ja) | 2019-06-27 |
| US20170287541A1 (en) | 2017-10-05 |
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