SG11201610455TA - Method and device for surface treatment of substrates - Google Patents

Method and device for surface treatment of substrates

Info

Publication number
SG11201610455TA
SG11201610455TA SG11201610455TA SG11201610455TA SG11201610455TA SG 11201610455T A SG11201610455T A SG 11201610455TA SG 11201610455T A SG11201610455T A SG 11201610455TA SG 11201610455T A SG11201610455T A SG 11201610455TA SG 11201610455T A SG11201610455T A SG 11201610455TA
Authority
SG
Singapore
Prior art keywords
substrates
surface treatment
treatment
Prior art date
Application number
SG11201610455TA
Other languages
English (en)
Inventor
Markus Wimplinger
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201610455TA publication Critical patent/SG11201610455TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)
SG11201610455TA 2014-06-24 2014-06-24 Method and device for surface treatment of substrates SG11201610455TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/063303 WO2015197112A1 (de) 2014-06-24 2014-06-24 Verfahren und vorrichtung zur oberflächenbehandlung von substraten

Publications (1)

Publication Number Publication Date
SG11201610455TA true SG11201610455TA (en) 2017-01-27

Family

ID=50981536

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610455TA SG11201610455TA (en) 2014-06-24 2014-06-24 Method and device for surface treatment of substrates

Country Status (8)

Country Link
US (5) US10083854B2 (ko)
EP (3) EP4102544A1 (ko)
JP (1) JP2017523603A (ko)
KR (2) KR102306977B1 (ko)
CN (4) CN114695134A (ko)
SG (1) SG11201610455TA (ko)
TW (3) TWI698923B (ko)
WO (1) WO2015197112A1 (ko)

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DE102015108901A1 (de) 2015-06-05 2016-12-08 Ev Group E. Thallner Gmbh Verfahren zum Ausrichten von Substraten vor dem Bonden
US10373830B2 (en) * 2016-03-08 2019-08-06 Ostendo Technologies, Inc. Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
JP2020508564A (ja) 2017-02-21 2020-03-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を接合する方法および装置
JP7182105B2 (ja) * 2019-05-16 2022-12-02 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物半導体デバイスの製造方法
JP7424274B2 (ja) 2020-11-11 2024-01-30 株式会社Sumco 貼り合わせウェーハ及び貼り合わせウェーハの製造方法
WO2023066461A1 (de) 2021-10-19 2023-04-27 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum transferieren und bereitstellen von bauteilen
WO2023066463A1 (de) 2021-10-19 2023-04-27 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum erzeugen und zum bereitstellen von elektronischen bauteilen
FR3134227A1 (fr) * 2022-04-04 2023-10-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de collage d’un premier substrat au niveau d’une surface présentant une nanotopologie élastique

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Also Published As

Publication number Publication date
CN107078028A (zh) 2017-08-18
CN114695134A (zh) 2022-07-01
WO2015197112A1 (de) 2015-12-30
US20180366366A1 (en) 2018-12-20
CN111549328A (zh) 2020-08-18
TW201601207A (zh) 2016-01-01
TWI647751B (zh) 2019-01-11
US10490439B2 (en) 2019-11-26
US11776842B2 (en) 2023-10-03
CN111549327A (zh) 2020-08-18
TWI799710B (zh) 2023-04-21
TW202034392A (zh) 2020-09-16
EP3217421A1 (de) 2017-09-13
EP3161855B9 (de) 2018-04-11
US11348825B2 (en) 2022-05-31
TW201907461A (zh) 2019-02-16
US20200020572A1 (en) 2020-01-16
US20170098572A1 (en) 2017-04-06
KR102182789B1 (ko) 2020-11-26
EP4102544A1 (de) 2022-12-14
KR102306977B1 (ko) 2021-09-30
TWI698923B (zh) 2020-07-11
KR20170023820A (ko) 2017-03-06
US10083854B2 (en) 2018-09-25
JP2017523603A (ja) 2017-08-17
KR20200122410A (ko) 2020-10-27
EP3161855A1 (de) 2017-05-03
US20220216098A1 (en) 2022-07-07
EP3161855B1 (de) 2017-12-20
US20200402840A1 (en) 2020-12-24
US10796944B2 (en) 2020-10-06

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