SG11201708073YA - Composition for treating surface of substrate, method and device - Google Patents

Composition for treating surface of substrate, method and device

Info

Publication number
SG11201708073YA
SG11201708073YA SG11201708073YA SG11201708073YA SG11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA
Authority
SG
Singapore
Prior art keywords
substrate
composition
treating surface
treating
Prior art date
Application number
SG11201708073YA
Inventor
Seiji Inaoka
William Jack Casteel Jr
Raymond Nicholas Vrtis
Kathleen Esther Theodorou
Tianniu Chen
Mark Richard Brown
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of SG11201708073YA publication Critical patent/SG11201708073YA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841Cleaning during or after manufacture
    • B81C1/00849Cleaning during or after manufacture during manufacture
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/162Organic compounds containing Si
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/36Organic compounds containing phosphorus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
SG11201708073YA 2015-04-01 2016-04-01 Composition for treating surface of substrate, method and device SG11201708073YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562141657P 2015-04-01 2015-04-01
US15/084,169 US9976037B2 (en) 2015-04-01 2016-03-29 Composition for treating surface of substrate, method and device
PCT/US2016/025558 WO2016161289A1 (en) 2015-04-01 2016-04-01 Composition for treating surface of substrate, method and device

Publications (1)

Publication Number Publication Date
SG11201708073YA true SG11201708073YA (en) 2017-10-30

Family

ID=57007380

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201708073YA SG11201708073YA (en) 2015-04-01 2016-04-01 Composition for treating surface of substrate, method and device

Country Status (7)

Country Link
US (1) US9976037B2 (en)
JP (1) JP6626121B2 (en)
KR (1) KR102031814B1 (en)
CN (1) CN107810261A (en)
SG (1) SG11201708073YA (en)
TW (1) TWI603976B (en)
WO (1) WO2016161289A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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JP6454245B2 (en) * 2014-10-21 2019-01-16 東京エレクトロン株式会社 Substrate liquid processing method, substrate liquid processing apparatus, and computer readable storage medium storing substrate liquid processing program
JP2016139774A (en) * 2015-01-23 2016-08-04 富士フイルム株式会社 Pattern processing method, manufacturing method of semiconductor substrate product, and pretreatment liquid of pattern structure
JP6419053B2 (en) * 2015-10-08 2018-11-07 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
TWI673230B (en) * 2017-01-16 2019-10-01 昇佳電子股份有限公司 Manufacturing method of micro-electro-mechanical systems device
SG11201908617QA (en) * 2017-03-24 2019-10-30 Fujifilm Electronic Materials Usa Inc Surface treatment methods and compositions therefor
KR102441238B1 (en) * 2017-09-14 2022-09-08 주식회사 이엔에프테크놀로지 Etching composition for silicon nitride film and etching method using the same
KR102457243B1 (en) * 2017-12-21 2022-10-21 주식회사 이엔에프테크놀로지 Etching composition for silicon nitride layer
WO2019135901A1 (en) 2018-01-05 2019-07-11 Fujifilm Electronic Materials U.S.A., Inc. Surface treatment compositions and methods
KR102079016B1 (en) * 2018-02-08 2020-02-19 인하대학교 산학협력단 Fluorous Developer Solutions with Additives for Highly Fluorinated Photoresists and Processing Method for Organic Light-Emitting Diodes display
KR102084164B1 (en) * 2018-03-06 2020-05-27 에스케이씨 주식회사 Composition for semiconductor process and semiconductor process
KR20190138743A (en) * 2018-06-06 2019-12-16 도오꾜오까고오교 가부시끼가이샤 Method for treating substrate and rinsing liquid
WO2020004047A1 (en) * 2018-06-27 2020-01-02 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning system, and storage medium
KR102460326B1 (en) * 2018-06-28 2022-10-31 오씨아이 주식회사 Etching solution for silicon substrate
US20200035494A1 (en) * 2018-07-30 2020-01-30 Fujifilm Electronic Materials U.S.A., Inc. Surface Treatment Compositions and Methods
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
CN112011657A (en) * 2019-05-31 2020-12-01 劳力士有限公司 Composition for impregnating substrates, in particular watch straps
JP7529362B2 (en) 2020-06-10 2024-08-06 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
KR20230001961A (en) * 2021-06-29 2023-01-05 세메스 주식회사 Substrate processing method and substrate processing system
KR102655599B1 (en) * 2023-07-17 2024-04-08 와이씨켐 주식회사 Coating composition for preventing leaning of semiconsuctor pattern and pattern coated using the same

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Publication number Priority date Publication date Assignee Title
US7410820B2 (en) 2004-01-05 2008-08-12 Texas Instruments Incorporated MEMS passivation with phosphonate surfactants
US7883738B2 (en) * 2007-04-18 2011-02-08 Enthone Inc. Metallic surface enhancement
EP2355139B1 (en) 2008-11-28 2018-03-14 Sony Corporation Method of manufacturing a thin film transistor
JP5446848B2 (en) 2009-01-21 2014-03-19 セントラル硝子株式会社 Silicon wafer cleaning agent
CN102459290B (en) * 2009-04-06 2017-03-22 乔治亚州技术研究公司 Electronic devices comprising novel phosphonic acid surface modifiers
US8182646B2 (en) 2009-09-30 2012-05-22 Federal-Mogul Corporation Substrate and rubber composition and method of making the composition
CN102741188B (en) 2009-12-04 2016-04-06 奥兰若技术有限公司 Surface treatment and coating
CN103081072A (en) 2010-08-27 2013-05-01 高级技术材料公司 Method for preventing the collapse of high aspect ratio structures during drying
JP2013118347A (en) 2010-12-28 2013-06-13 Central Glass Co Ltd Cleaning method of wafer
KR101525152B1 (en) * 2012-12-12 2015-06-04 영창케미칼 주식회사 Coating Composition For CAPACITOR Anti-leaning
WO2017053345A1 (en) * 2015-09-23 2017-03-30 3M Innovative Properties Company Composition including silanes and methods of making a treated article

Also Published As

Publication number Publication date
US9976037B2 (en) 2018-05-22
TWI603976B (en) 2017-11-01
KR20170135889A (en) 2017-12-08
KR102031814B1 (en) 2019-10-14
JP2018515910A (en) 2018-06-14
TW201636355A (en) 2016-10-16
US20160289455A1 (en) 2016-10-06
JP6626121B2 (en) 2019-12-25
CN107810261A (en) 2018-03-16
WO2016161289A1 (en) 2016-10-06

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