SG11201708073YA - Composition for treating surface of substrate, method and device - Google Patents
Composition for treating surface of substrate, method and deviceInfo
- Publication number
- SG11201708073YA SG11201708073YA SG11201708073YA SG11201708073YA SG11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA SG 11201708073Y A SG11201708073Y A SG 11201708073YA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- composition
- treating surface
- treating
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00841—Cleaning during or after manufacture
- B81C1/00849—Cleaning during or after manufacture during manufacture
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562141657P | 2015-04-01 | 2015-04-01 | |
US15/084,169 US9976037B2 (en) | 2015-04-01 | 2016-03-29 | Composition for treating surface of substrate, method and device |
PCT/US2016/025558 WO2016161289A1 (en) | 2015-04-01 | 2016-04-01 | Composition for treating surface of substrate, method and device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708073YA true SG11201708073YA (en) | 2017-10-30 |
Family
ID=57007380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708073YA SG11201708073YA (en) | 2015-04-01 | 2016-04-01 | Composition for treating surface of substrate, method and device |
Country Status (7)
Country | Link |
---|---|
US (1) | US9976037B2 (en) |
JP (1) | JP6626121B2 (en) |
KR (1) | KR102031814B1 (en) |
CN (1) | CN107810261A (en) |
SG (1) | SG11201708073YA (en) |
TW (1) | TWI603976B (en) |
WO (1) | WO2016161289A1 (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6454245B2 (en) * | 2014-10-21 | 2019-01-16 | 東京エレクトロン株式会社 | Substrate liquid processing method, substrate liquid processing apparatus, and computer readable storage medium storing substrate liquid processing program |
JP2016139774A (en) * | 2015-01-23 | 2016-08-04 | 富士フイルム株式会社 | Pattern processing method, manufacturing method of semiconductor substrate product, and pretreatment liquid of pattern structure |
JP6419053B2 (en) * | 2015-10-08 | 2018-11-07 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
TWI673230B (en) * | 2017-01-16 | 2019-10-01 | 昇佳電子股份有限公司 | Manufacturing method of micro-electro-mechanical systems device |
SG11201908617QA (en) * | 2017-03-24 | 2019-10-30 | Fujifilm Electronic Materials Usa Inc | Surface treatment methods and compositions therefor |
KR102441238B1 (en) * | 2017-09-14 | 2022-09-08 | 주식회사 이엔에프테크놀로지 | Etching composition for silicon nitride film and etching method using the same |
KR102457243B1 (en) * | 2017-12-21 | 2022-10-21 | 주식회사 이엔에프테크놀로지 | Etching composition for silicon nitride layer |
WO2019135901A1 (en) | 2018-01-05 | 2019-07-11 | Fujifilm Electronic Materials U.S.A., Inc. | Surface treatment compositions and methods |
KR102079016B1 (en) * | 2018-02-08 | 2020-02-19 | 인하대학교 산학협력단 | Fluorous Developer Solutions with Additives for Highly Fluorinated Photoresists and Processing Method for Organic Light-Emitting Diodes display |
KR102084164B1 (en) * | 2018-03-06 | 2020-05-27 | 에스케이씨 주식회사 | Composition for semiconductor process and semiconductor process |
KR20190138743A (en) * | 2018-06-06 | 2019-12-16 | 도오꾜오까고오교 가부시끼가이샤 | Method for treating substrate and rinsing liquid |
WO2020004047A1 (en) * | 2018-06-27 | 2020-01-02 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning system, and storage medium |
KR102460326B1 (en) * | 2018-06-28 | 2022-10-31 | 오씨아이 주식회사 | Etching solution for silicon substrate |
US20200035494A1 (en) * | 2018-07-30 | 2020-01-30 | Fujifilm Electronic Materials U.S.A., Inc. | Surface Treatment Compositions and Methods |
US11094527B2 (en) | 2018-10-10 | 2021-08-17 | International Business Machines Corporation | Wet clean solutions to prevent pattern collapse |
CN112011657A (en) * | 2019-05-31 | 2020-12-01 | 劳力士有限公司 | Composition for impregnating substrates, in particular watch straps |
JP7529362B2 (en) | 2020-06-10 | 2024-08-06 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
KR20230001961A (en) * | 2021-06-29 | 2023-01-05 | 세메스 주식회사 | Substrate processing method and substrate processing system |
KR102655599B1 (en) * | 2023-07-17 | 2024-04-08 | 와이씨켐 주식회사 | Coating composition for preventing leaning of semiconsuctor pattern and pattern coated using the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7410820B2 (en) | 2004-01-05 | 2008-08-12 | Texas Instruments Incorporated | MEMS passivation with phosphonate surfactants |
US7883738B2 (en) * | 2007-04-18 | 2011-02-08 | Enthone Inc. | Metallic surface enhancement |
EP2355139B1 (en) | 2008-11-28 | 2018-03-14 | Sony Corporation | Method of manufacturing a thin film transistor |
JP5446848B2 (en) | 2009-01-21 | 2014-03-19 | セントラル硝子株式会社 | Silicon wafer cleaning agent |
CN102459290B (en) * | 2009-04-06 | 2017-03-22 | 乔治亚州技术研究公司 | Electronic devices comprising novel phosphonic acid surface modifiers |
US8182646B2 (en) | 2009-09-30 | 2012-05-22 | Federal-Mogul Corporation | Substrate and rubber composition and method of making the composition |
CN102741188B (en) | 2009-12-04 | 2016-04-06 | 奥兰若技术有限公司 | Surface treatment and coating |
CN103081072A (en) | 2010-08-27 | 2013-05-01 | 高级技术材料公司 | Method for preventing the collapse of high aspect ratio structures during drying |
JP2013118347A (en) | 2010-12-28 | 2013-06-13 | Central Glass Co Ltd | Cleaning method of wafer |
KR101525152B1 (en) * | 2012-12-12 | 2015-06-04 | 영창케미칼 주식회사 | Coating Composition For CAPACITOR Anti-leaning |
WO2017053345A1 (en) * | 2015-09-23 | 2017-03-30 | 3M Innovative Properties Company | Composition including silanes and methods of making a treated article |
-
2016
- 2016-03-29 US US15/084,169 patent/US9976037B2/en active Active
- 2016-04-01 WO PCT/US2016/025558 patent/WO2016161289A1/en active Application Filing
- 2016-04-01 KR KR1020177031487A patent/KR102031814B1/en active IP Right Grant
- 2016-04-01 JP JP2017551102A patent/JP6626121B2/en active Active
- 2016-04-01 SG SG11201708073YA patent/SG11201708073YA/en unknown
- 2016-04-01 CN CN201680030221.0A patent/CN107810261A/en active Pending
- 2016-04-01 TW TW105110601A patent/TWI603976B/en active
Also Published As
Publication number | Publication date |
---|---|
US9976037B2 (en) | 2018-05-22 |
TWI603976B (en) | 2017-11-01 |
KR20170135889A (en) | 2017-12-08 |
KR102031814B1 (en) | 2019-10-14 |
JP2018515910A (en) | 2018-06-14 |
TW201636355A (en) | 2016-10-16 |
US20160289455A1 (en) | 2016-10-06 |
JP6626121B2 (en) | 2019-12-25 |
CN107810261A (en) | 2018-03-16 |
WO2016161289A1 (en) | 2016-10-06 |
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