TWI799710B - 用於基板表面處理之方法及裝置 - Google Patents

用於基板表面處理之方法及裝置 Download PDF

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Publication number
TWI799710B
TWI799710B TW109118160A TW109118160A TWI799710B TW I799710 B TWI799710 B TW I799710B TW 109118160 A TW109118160 A TW 109118160A TW 109118160 A TW109118160 A TW 109118160A TW I799710 B TWI799710 B TW I799710B
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Taiwan
Prior art keywords
substrates
surface treatment
treatment
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TW109118160A
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TW202034392A (zh
Inventor
馬克斯 威普林格
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奧地利商Ev集團E塔那有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
TW109118160A 2014-06-24 2015-04-08 用於基板表面處理之方法及裝置 TWI799710B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/EP2014/063303 2014-06-24
PCT/EP2014/063303 WO2015197112A1 (de) 2014-06-24 2014-06-24 Verfahren und vorrichtung zur oberflächenbehandlung von substraten

Publications (2)

Publication Number Publication Date
TW202034392A TW202034392A (zh) 2020-09-16
TWI799710B true TWI799710B (zh) 2023-04-21

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW107142528A TWI698923B (zh) 2014-06-24 2015-04-08 用於基板表面處理之群集裝置
TW104111308A TWI647751B (zh) 2014-06-24 2015-04-08 基板表面處理之方法及裝置
TW109118160A TWI799710B (zh) 2014-06-24 2015-04-08 用於基板表面處理之方法及裝置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW107142528A TWI698923B (zh) 2014-06-24 2015-04-08 用於基板表面處理之群集裝置
TW104111308A TWI647751B (zh) 2014-06-24 2015-04-08 基板表面處理之方法及裝置

Country Status (8)

Country Link
US (5) US10083854B2 (zh)
EP (3) EP3161855B9 (zh)
JP (1) JP2017523603A (zh)
KR (2) KR102306977B1 (zh)
CN (4) CN111549327A (zh)
SG (1) SG11201610455TA (zh)
TW (3) TWI698923B (zh)
WO (1) WO2015197112A1 (zh)

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CN113410128A (zh) 2014-12-23 2021-09-17 Ev 集团 E·索尔纳有限责任公司 用于预固定衬底的方法和装置
DE102015108901A1 (de) 2015-06-05 2016-12-08 Ev Group E. Thallner Gmbh Verfahren zum Ausrichten von Substraten vor dem Bonden
US10373830B2 (en) * 2016-03-08 2019-08-06 Ostendo Technologies, Inc. Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
SG11201906390SA (en) 2017-02-21 2019-08-27 Ev Group E Thallner Gmbh Method and device for bonding substrates
JP7182105B2 (ja) * 2019-05-16 2022-12-02 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物半導体デバイスの製造方法
JP7424274B2 (ja) * 2020-11-11 2024-01-30 株式会社Sumco 貼り合わせウェーハ及び貼り合わせウェーハの製造方法
WO2023066461A1 (de) 2021-10-19 2023-04-27 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum transferieren und bereitstellen von bauteilen
WO2023066463A1 (de) 2021-10-19 2023-04-27 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum erzeugen und zum bereitstellen von elektronischen bauteilen
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US20070072391A1 (en) * 2003-12-23 2007-03-29 Commissariat A L'energie Atomique Method of sealing two plates with the formation of an ohmic contact therebetween
US20110207293A1 (en) * 2008-10-31 2011-08-25 Thomas Signamarcheix Method of producing a hybrid substrate having a continuous buried eectrically insulating layer
CN103460339A (zh) * 2011-01-31 2013-12-18 须贺唯知 接合面制作方法、接合基板、基板接合方法、接合面制作装置以及基板接合体
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Also Published As

Publication number Publication date
TW201601207A (zh) 2016-01-01
KR20170023820A (ko) 2017-03-06
US11776842B2 (en) 2023-10-03
CN107078028A (zh) 2017-08-18
CN111549327A (zh) 2020-08-18
KR102182789B1 (ko) 2020-11-26
KR20200122410A (ko) 2020-10-27
EP3217421A1 (de) 2017-09-13
TW201907461A (zh) 2019-02-16
EP3161855B1 (de) 2017-12-20
CN111549328A (zh) 2020-08-18
KR102306977B1 (ko) 2021-09-30
WO2015197112A1 (de) 2015-12-30
US20170098572A1 (en) 2017-04-06
EP3161855A1 (de) 2017-05-03
US10796944B2 (en) 2020-10-06
US10083854B2 (en) 2018-09-25
EP4102544A1 (de) 2022-12-14
SG11201610455TA (en) 2017-01-27
TW202034392A (zh) 2020-09-16
EP3161855B9 (de) 2018-04-11
US20220216098A1 (en) 2022-07-07
TWI698923B (zh) 2020-07-11
CN114695134A (zh) 2022-07-01
TWI647751B (zh) 2019-01-11
US11348825B2 (en) 2022-05-31
US20200402840A1 (en) 2020-12-24
US10490439B2 (en) 2019-11-26
JP2017523603A (ja) 2017-08-17
US20180366366A1 (en) 2018-12-20
US20200020572A1 (en) 2020-01-16

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