SG11201609530VA - Dicing tape thermal management by wafer frame support ring cooling during plasma dicing - Google Patents

Dicing tape thermal management by wafer frame support ring cooling during plasma dicing

Info

Publication number
SG11201609530VA
SG11201609530VA SG11201609530VA SG11201609530VA SG11201609530VA SG 11201609530V A SG11201609530V A SG 11201609530VA SG 11201609530V A SG11201609530V A SG 11201609530VA SG 11201609530V A SG11201609530V A SG 11201609530VA SG 11201609530V A SG11201609530V A SG 11201609530VA
Authority
SG
Singapore
Prior art keywords
dicing
support ring
thermal management
frame support
during plasma
Prior art date
Application number
SG11201609530VA
Other languages
English (en)
Inventor
Wei-Sheng Lei
Prabhat Kumar
Brad Eaton
Ajay Kumar
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201609530VA publication Critical patent/SG11201609530VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
SG11201609530VA 2014-05-13 2015-05-05 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing SG11201609530VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/276,683 US9112050B1 (en) 2014-05-13 2014-05-13 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
PCT/US2015/029259 WO2015175267A1 (en) 2014-05-13 2015-05-05 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing

Publications (1)

Publication Number Publication Date
SG11201609530VA true SG11201609530VA (en) 2016-12-29

Family

ID=53786106

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201609530VA SG11201609530VA (en) 2014-05-13 2015-05-05 Dicing tape thermal management by wafer frame support ring cooling during plasma dicing

Country Status (7)

Country Link
US (1) US9112050B1 (ko)
JP (1) JP6556759B2 (ko)
KR (1) KR102469595B1 (ko)
CN (1) CN106716602B (ko)
SG (1) SG11201609530VA (ko)
TW (1) TWI658538B (ko)
WO (1) WO2015175267A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
CN113921447A (zh) * 2014-12-29 2022-01-11 株式会社迪思科 保护片、保护片布置、半导体尺寸晶片的处理系统和方法
JP6555656B2 (ja) * 2015-02-17 2019-08-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置および電子部品の製造方法
US10090177B1 (en) * 2017-08-25 2018-10-02 Micron Technology, Inc. Cold fluid semiconductor device release during pick and place operations, and associated systems and methods
JP7045635B2 (ja) 2017-08-30 2022-04-01 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
TWI776026B (zh) * 2018-06-04 2022-09-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
KR102158832B1 (ko) * 2018-11-20 2020-09-22 한화정밀기계 주식회사 웨이퍼 절단 방법 및 절단 장치
JP7301477B2 (ja) * 2019-08-09 2023-07-03 株式会社ディスコ プラズマエッチング装置
JP7281741B2 (ja) * 2019-08-23 2023-05-26 パナソニックＩｐマネジメント株式会社 素子チップのスムージング方法および素子チップの製造方法
CN113851402A (zh) * 2021-05-31 2021-12-28 华灿光电(苏州）有限公司 用于等离子刻蚀机的托盘及等离子刻蚀机

Family Cites Families (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4339528A (en) 1981-05-19 1982-07-13 Rca Corporation Etching method using a hardened PVA stencil
US4684437A (en) 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
KR100215338B1 (ko) 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
US5691794A (en) 1993-02-01 1997-11-25 Canon Kabushiki Kaisha Liquid crystal display device
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (ja) 1996-02-07 1997-08-19 Canon Inc 基板の切断方法及び切断装置
DE69725245T2 (de) 1996-08-01 2004-08-12 Surface Technoloy Systems Plc Verfahren zur Ätzung von Substraten
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (ja) 1997-05-19 2001-11-19 日亜化学工業株式会社 窒化物系化合物半導体素子の製造方法及び半導体発光素子
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
US6117349A (en) * 1998-08-28 2000-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Composite shadow ring equipped with a sacrificial inner ring
JP2001044144A (ja) 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd 半導体チップの製造プロセス
JP2001110811A (ja) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4387007B2 (ja) 1999-10-26 2009-12-16 株式会社ディスコ 半導体ウェーハの分割方法
JP2001144126A (ja) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
JP2001148358A (ja) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd 半導体ウェーハ及び該半導体ウェーハの分割方法
US6300593B1 (en) 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
KR100830128B1 (ko) 2000-01-10 2008-05-20 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 초단 펄스 폭을 가진 레이저 펄스의 버스트로 메모리링크를 처리하기 위한 레이저 시스템 및 방법
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
WO2001074529A2 (en) 2000-03-30 2001-10-11 Electro Scientific Industries, Inc. Laser system and method for single pass micromachining of multilayer workpieces
DE10196418B4 (de) 2000-07-12 2010-07-22 Electro Scientific Industries, Inc., Portland Lasersystem zum Bearbeiten von Verbindungen eines IC-Bauelements, Verfahren zum Bearbeiten von Verbindungen eines IC-Bauelements und Verfahren zum Ausrichten eines Laserbearbeitungsstrahls auf eine Verbindung eines IC-Bauelements
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (ja) 2001-12-13 2007-04-25 東京エレクトロン株式会社 半導体素子分離方法及び半導体素子分離装置
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
KR100451950B1 (ko) 2002-02-25 2004-10-08 삼성전자주식회사 이미지 센서 소자 웨이퍼 소잉 방법
AU2003246348A1 (en) 2002-02-25 2003-09-09 Disco Corporation Method for dividing semiconductor wafer
JP2003257896A (ja) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd 半導体ウェーハの分割方法
ATE316691T1 (de) 2002-04-19 2006-02-15 Xsil Technology Ltd Laser-behandlung
JP2004031526A (ja) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd ３族窒化物系化合物半導体素子の製造方法
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (ja) 2002-07-17 2009-07-01 新光電気工業株式会社 半導体装置の製造方法
JP3908148B2 (ja) 2002-10-28 2007-04-25 シャープ株式会社 積層型半導体装置
JP4013753B2 (ja) 2002-12-11 2007-11-28 松下電器産業株式会社 半導体ウェハの切断方法
JP3991872B2 (ja) * 2003-01-23 2007-10-17 松下電器産業株式会社 半導体装置の製造方法
US20040157457A1 (en) 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
JP2004273895A (ja) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2004322168A (ja) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd レーザー加工装置
JP4231349B2 (ja) 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置
JP4408361B2 (ja) 2003-09-26 2010-02-03 株式会社ディスコ ウエーハの分割方法
JP4592270B2 (ja) * 2003-10-06 2010-12-01 日東電工株式会社 半導体ウエハの支持材からの剥離方法およびこれを用いた装置
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (ja) 2003-11-18 2010-06-02 株式会社ディスコ ウエーハの加工方法
JP2005203541A (ja) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハのレーザー加工方法
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7507638B2 (en) 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP4018088B2 (ja) 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (ja) 2004-10-05 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法、及び半導体素子の製造方法
US20060088984A1 (en) 2004-10-21 2006-04-27 Intel Corporation Laser ablation method
US20060086898A1 (en) 2004-10-26 2006-04-27 Matsushita Electric Industrial Co., Ltd. Method and apparatus of making highly repetitive micro-pattern using laser writer
US20060146910A1 (en) 2004-11-23 2006-07-06 Manoochehr Koochesfahani Method and apparatus for simultaneous velocity and temperature measurements in fluid flow
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (ja) 2005-03-10 2006-09-21 Nec Electronics Corp 半導体装置の製造方法
US7361990B2 (en) 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
JP4478053B2 (ja) 2005-03-29 2010-06-09 株式会社ディスコ 半導体ウエーハ処理方法
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
JP4599243B2 (ja) 2005-07-12 2010-12-15 株式会社ディスコ レーザー加工装置
JP4769560B2 (ja) 2005-12-06 2011-09-07 株式会社ディスコ ウエーハの分割方法
JP4372115B2 (ja) 2006-05-12 2009-11-25 パナソニック株式会社 半導体装置の製造方法、および半導体モジュールの製造方法
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
JP4544231B2 (ja) * 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP4840174B2 (ja) 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP4840200B2 (ja) 2007-03-09 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
US7767557B2 (en) * 2007-05-11 2010-08-03 Micron Technology, Inc. Chilled wafer dicing
JP5205012B2 (ja) 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 表示装置及び当該表示装置を具備する電子機器
JP4858395B2 (ja) 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
JP2009260272A (ja) * 2008-03-25 2009-11-05 Panasonic Corp 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法
WO2009126907A2 (en) 2008-04-10 2009-10-15 Applied Materials, Inc. Laser-scribing platform and hybrid writing strategy
JP2010010397A (ja) * 2008-06-27 2010-01-14 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5331580B2 (ja) 2008-07-02 2013-10-30 日本碍子株式会社 ウエハ載置装置及びそれに用いる部品
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
US8609512B2 (en) 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US9082839B2 (en) 2011-03-14 2015-07-14 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8946058B2 (en) 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9343365B2 (en) 2011-03-14 2016-05-17 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9070760B2 (en) 2011-03-14 2015-06-30 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5528394B2 (ja) * 2011-05-30 2014-06-25 パナソニック株式会社 プラズマ処理装置、搬送キャリア、及びプラズマ処理方法
US8912077B2 (en) 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
JP6011965B2 (ja) 2012-09-19 2016-10-25 パナソニックＩｐマネジメント株式会社 プラズマダイシング方法及びプラズマダイシング装置
US9252057B2 (en) * 2012-10-17 2016-02-02 Applied Materials, Inc. Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
US9484260B2 (en) * 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
KR101317942B1 (ko) * 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
CN106068548B (zh) * 2014-03-07 2020-02-28 等离子瑟姆有限公司 用于对半导体晶圆进行等离子体切片的方法和设备

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TWI658538B (zh) 2019-05-01
CN106716602A (zh) 2017-05-24
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WO2015175267A1 (en) 2015-11-19
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