SG11201404314WA - Magnetic material sputtering target and manufacturing method for same - Google Patents

Magnetic material sputtering target and manufacturing method for same

Info

Publication number
SG11201404314WA
SG11201404314WA SG11201404314WA SG11201404314WA SG11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
magnetic material
sputtering target
material sputtering
Prior art date
Application number
SG11201404314WA
Other languages
English (en)
Inventor
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201404314WA publication Critical patent/SG11201404314WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
SG11201404314WA 2012-02-22 2013-02-15 Magnetic material sputtering target and manufacturing method for same SG11201404314WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012036562 2012-02-22
PCT/JP2013/053753 WO2013125469A1 (ja) 2012-02-22 2013-02-15 磁性材スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201404314WA true SG11201404314WA (en) 2014-10-30

Family

ID=49005655

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404314WA SG11201404314WA (en) 2012-02-22 2013-02-15 Magnetic material sputtering target and manufacturing method for same

Country Status (7)

Country Link
US (1) US9761422B2 (zh)
JP (1) JP5829747B2 (zh)
CN (1) CN104145042B (zh)
MY (1) MY169053A (zh)
SG (1) SG11201404314WA (zh)
TW (1) TW201400630A (zh)
WO (1) WO2013125469A1 (zh)

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EP3015566B1 (en) 2013-11-28 2021-09-15 JX Nippon Mining & Metals Corporation Magnetic material sputtering target and method for producing same
WO2016013334A1 (ja) * 2014-07-25 2016-01-28 Jx日鉱日石金属株式会社 磁性体薄膜形成用スパッタリングターゲット
JP6366095B2 (ja) * 2014-07-29 2018-08-01 株式会社フルヤ金属 磁気記録媒体用スパッタリングターゲット
JP6504605B2 (ja) * 2015-11-27 2019-04-24 田中貴金属工業株式会社 スパッタリングターゲット
CN108699677B (zh) 2016-02-19 2020-12-04 捷客斯金属株式会社 磁记录介质用溅射靶以及磁性薄膜
SG11201807804PA (en) * 2016-03-31 2018-10-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
JP2017224371A (ja) * 2016-06-15 2017-12-21 昭和電工株式会社 磁気記録媒体及び磁気記憶装置
JP6734399B2 (ja) * 2016-12-28 2020-08-05 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP6971901B2 (ja) * 2018-03-27 2021-11-24 Ｊｘ金属株式会社 スパッタリングターゲット
CN110004421A (zh) * 2019-03-31 2019-07-12 柳州呈奥科技有限公司 一种钴铁铌基靶材及其加工工艺
JP7317741B2 (ja) * 2020-02-07 2023-07-31 Ｊｘ金属株式会社 スパッタリングターゲット、磁性膜、及びスパッタリングターゲット作製用の原料混合粉末

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JP3816595B2 (ja) 1996-09-18 2006-08-30 三井金属鉱業株式会社 スパッタリングターゲットの製造方法
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MY150826A (en) 2010-07-20 2014-02-28 Jx Nippon Mining & Metals Corp Sputtering target of perromagnetic material with low generation of particles
CN103210115B (zh) 2010-07-29 2016-01-20 吉坤日矿日石金属株式会社 磁记录膜用溅射靶及其制造方法
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MY160775A (en) 2010-09-03 2017-03-15 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
JP5426030B2 (ja) 2010-12-09 2014-02-26 Ｊｘ日鉱日石金属株式会社 強磁性材スパッタリングターゲット
CN103097570B (zh) 2010-12-15 2015-04-01 吉坤日矿日石金属株式会社 强磁性材料溅射靶及其制造方法
WO2012081340A1 (ja) 2010-12-17 2012-06-21 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
MY161232A (en) 2010-12-20 2017-04-14 Jx Nippon Mining & Metals Corp Fe-pt-based ferromagnetic sputtering target and method for producing same
MY156716A (en) 2010-12-21 2016-03-15 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film and process for production thereof
CN103270190B (zh) 2010-12-22 2016-01-20 吉坤日矿日石金属株式会社 烧结体溅射靶
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Also Published As

Publication number Publication date
CN104145042B (zh) 2016-08-24
JP5829747B2 (ja) 2015-12-09
US9761422B2 (en) 2017-09-12
JPWO2013125469A1 (ja) 2015-07-30
WO2013125469A1 (ja) 2013-08-29
US20150021175A1 (en) 2015-01-22
TWI560291B (zh) 2016-12-01
CN104145042A (zh) 2014-11-12
TW201400630A (zh) 2014-01-01
MY169053A (en) 2019-02-11

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