SG11201404314WA - Magnetic material sputtering target and manufacturing method for same - Google Patents
Magnetic material sputtering target and manufacturing method for sameInfo
- Publication number
- SG11201404314WA SG11201404314WA SG11201404314WA SG11201404314WA SG11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA SG 11201404314W A SG11201404314W A SG 11201404314WA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- magnetic material
- sputtering target
- material sputtering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012036562 | 2012-02-22 | ||
PCT/JP2013/053753 WO2013125469A1 (ja) | 2012-02-22 | 2013-02-15 | 磁性材スパッタリングターゲット及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201404314WA true SG11201404314WA (en) | 2014-10-30 |
Family
ID=49005655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201404314WA SG11201404314WA (en) | 2012-02-22 | 2013-02-15 | Magnetic material sputtering target and manufacturing method for same |
Country Status (7)
Country | Link |
---|---|
US (1) | US9761422B2 (zh) |
JP (1) | JP5829747B2 (zh) |
CN (1) | CN104145042B (zh) |
MY (1) | MY169053A (zh) |
SG (1) | SG11201404314WA (zh) |
TW (1) | TW201400630A (zh) |
WO (1) | WO2013125469A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103210115B (zh) | 2010-07-29 | 2016-01-20 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
CN104395497B (zh) * | 2012-02-23 | 2017-06-23 | 吉坤日矿日石金属株式会社 | 含有铬氧化物的强磁性材料溅射靶 |
EP3015566B1 (en) | 2013-11-28 | 2021-09-15 | JX Nippon Mining & Metals Corporation | Magnetic material sputtering target and method for producing same |
WO2016013334A1 (ja) * | 2014-07-25 | 2016-01-28 | Jx日鉱日石金属株式会社 | 磁性体薄膜形成用スパッタリングターゲット |
JP6366095B2 (ja) * | 2014-07-29 | 2018-08-01 | 株式会社フルヤ金属 | 磁気記録媒体用スパッタリングターゲット |
JP6504605B2 (ja) * | 2015-11-27 | 2019-04-24 | 田中貴金属工業株式会社 | スパッタリングターゲット |
CN108699677B (zh) | 2016-02-19 | 2020-12-04 | 捷客斯金属株式会社 | 磁记录介质用溅射靶以及磁性薄膜 |
SG11201807804PA (en) * | 2016-03-31 | 2018-10-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
JP2017224371A (ja) * | 2016-06-15 | 2017-12-21 | 昭和電工株式会社 | 磁気記録媒体及び磁気記憶装置 |
JP6734399B2 (ja) * | 2016-12-28 | 2020-08-05 | Jx金属株式会社 | 磁性材スパッタリングターゲット及びその製造方法 |
JP6971901B2 (ja) * | 2018-03-27 | 2021-11-24 | Jx金属株式会社 | スパッタリングターゲット |
CN110004421A (zh) * | 2019-03-31 | 2019-07-12 | 柳州呈奥科技有限公司 | 一种钴铁铌基靶材及其加工工艺 |
JP7317741B2 (ja) * | 2020-02-07 | 2023-07-31 | Jx金属株式会社 | スパッタリングターゲット、磁性膜、及びスパッタリングターゲット作製用の原料混合粉末 |
Family Cites Families (37)
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EP0483375B1 (en) * | 1990-05-15 | 1996-03-13 | Kabushiki Kaisha Toshiba | Sputtering target and production thereof |
JP3816595B2 (ja) | 1996-09-18 | 2006-08-30 | 三井金属鉱業株式会社 | スパッタリングターゲットの製造方法 |
JP2000234168A (ja) | 1998-12-07 | 2000-08-29 | Japan Energy Corp | 光ディスク保護膜形成用スパッタリングターゲット |
JP2001076329A (ja) | 1999-09-07 | 2001-03-23 | Fuji Electric Co Ltd | 磁気記録媒体およびその製造方法 |
US20070189916A1 (en) | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
CN1926260B (zh) | 2004-03-01 | 2010-10-06 | 日矿金属株式会社 | 表面缺陷少的溅射靶及其表面加工方法 |
JP2005272946A (ja) * | 2004-03-25 | 2005-10-06 | Sumitomo Metal Mining Co Ltd | 誘電体膜用の複合焼結ターゲット材とその製造方法 |
JP4422574B2 (ja) | 2004-07-30 | 2010-02-24 | 三井金属鉱業株式会社 | セラミックス−金属複合材料からなるスパッタリングターゲット材およびその製造方法 |
JP2006127621A (ja) | 2004-10-28 | 2006-05-18 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及びその製造方法 |
US20060289294A1 (en) | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
US9034153B2 (en) | 2006-01-13 | 2015-05-19 | Jx Nippon Mining & Metals Corporation | Nonmagnetic material particle dispersed ferromagnetic material sputtering target |
JP5024661B2 (ja) | 2007-03-26 | 2012-09-12 | 三菱マテリアル株式会社 | パーティクル発生の少ない磁気記録膜形成用Co基焼結合金スパッタリングターゲット |
JP2009001860A (ja) | 2007-06-21 | 2009-01-08 | Mitsubishi Materials Corp | 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット |
JP5204460B2 (ja) * | 2007-10-24 | 2013-06-05 | 三井金属鉱業株式会社 | 磁気記録膜用スパッタリングターゲットおよびその製造方法 |
JP2009215617A (ja) | 2008-03-11 | 2009-09-24 | Mitsui Mining & Smelting Co Ltd | コバルト、クロム、および白金からなるマトリックス相と酸化物相とを含有するスパッタリングターゲット材およびその製造方法 |
WO2009119812A1 (ja) | 2008-03-28 | 2009-10-01 | 日鉱金属株式会社 | 非磁性材粒子分散型強磁性材スパッタリングターゲット |
MY146996A (en) | 2009-03-03 | 2012-10-15 | Jx Nippon Mining & Metals Corp | Sputtering target and process for producing same |
SG172790A1 (en) | 2009-03-27 | 2011-08-29 | Jx Nippon Mining & Metals Corp | Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type |
CN102482764B (zh) | 2009-08-06 | 2014-06-18 | 吉坤日矿日石金属株式会社 | 无机物粒子分散型溅射靶 |
MY149640A (en) | 2009-12-11 | 2013-09-13 | Jx Nippon Mining & Metals Corp | Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film |
CN102666912B (zh) | 2009-12-25 | 2015-02-25 | 吉坤日矿日石金属株式会社 | 粉粒产生少的溅射靶及该靶的制造方法 |
CN102471876B (zh) | 2010-01-21 | 2014-04-30 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
US20120318669A1 (en) | 2010-02-19 | 2012-12-20 | Jx Nippon Mining & Metals Corporation | Sputtering target-backing plate assembly |
JP5240228B2 (ja) | 2010-04-09 | 2013-07-17 | Tdk株式会社 | スパッタリングターゲット、及び、垂直磁気記録媒体の製造方法 |
JP5536540B2 (ja) * | 2010-05-26 | 2014-07-02 | 昭和電工株式会社 | 磁気記録媒体および磁気記録再生装置 |
SG185768A1 (en) | 2010-07-20 | 2013-01-30 | Jx Nippon Mining & Metals Corp | Sputtering target of ferromagnetic material with low generation of particles |
MY150826A (en) | 2010-07-20 | 2014-02-28 | Jx Nippon Mining & Metals Corp | Sputtering target of perromagnetic material with low generation of particles |
CN103210115B (zh) | 2010-07-29 | 2016-01-20 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
JP5226155B2 (ja) | 2010-08-31 | 2013-07-03 | Jx日鉱日石金属株式会社 | Fe−Pt系強磁性材スパッタリングターゲット |
MY160775A (en) | 2010-09-03 | 2017-03-15 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
JP5426030B2 (ja) | 2010-12-09 | 2014-02-26 | Jx日鉱日石金属株式会社 | 強磁性材スパッタリングターゲット |
CN103097570B (zh) | 2010-12-15 | 2015-04-01 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶及其制造方法 |
WO2012081340A1 (ja) | 2010-12-17 | 2012-06-21 | Jx日鉱日石金属株式会社 | 磁気記録膜用スパッタリングターゲット及びその製造方法 |
MY161232A (en) | 2010-12-20 | 2017-04-14 | Jx Nippon Mining & Metals Corp | Fe-pt-based ferromagnetic sputtering target and method for producing same |
MY156716A (en) | 2010-12-21 | 2016-03-15 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording film and process for production thereof |
CN103270190B (zh) | 2010-12-22 | 2016-01-20 | 吉坤日矿日石金属株式会社 | 烧结体溅射靶 |
WO2013027443A1 (ja) | 2011-08-23 | 2013-02-28 | Jx日鉱日石金属株式会社 | パーティクル発生の少ない強磁性材スパッタリングターゲット |
-
2013
- 2013-02-15 SG SG11201404314WA patent/SG11201404314WA/en unknown
- 2013-02-15 JP JP2014500696A patent/JP5829747B2/ja active Active
- 2013-02-15 CN CN201380010378.3A patent/CN104145042B/zh active Active
- 2013-02-15 MY MYPI2014702133A patent/MY169053A/en unknown
- 2013-02-15 US US14/379,796 patent/US9761422B2/en active Active
- 2013-02-15 WO PCT/JP2013/053753 patent/WO2013125469A1/ja active Application Filing
- 2013-02-19 TW TW102105707A patent/TW201400630A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN104145042B (zh) | 2016-08-24 |
JP5829747B2 (ja) | 2015-12-09 |
US9761422B2 (en) | 2017-09-12 |
JPWO2013125469A1 (ja) | 2015-07-30 |
WO2013125469A1 (ja) | 2013-08-29 |
US20150021175A1 (en) | 2015-01-22 |
TWI560291B (zh) | 2016-12-01 |
CN104145042A (zh) | 2014-11-12 |
TW201400630A (zh) | 2014-01-01 |
MY169053A (en) | 2019-02-11 |
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