TWI560291B - - Google Patents

Info

Publication number
TWI560291B
TWI560291B TW102105707A TW102105707A TWI560291B TW I560291 B TWI560291 B TW I560291B TW 102105707 A TW102105707 A TW 102105707A TW 102105707 A TW102105707 A TW 102105707A TW I560291 B TWI560291 B TW I560291B
Authority
TW
Taiwan
Application number
TW102105707A
Other versions
TW201400630A (zh
Inventor
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of TW201400630A publication Critical patent/TW201400630A/zh
Application granted granted Critical
Publication of TWI560291B publication Critical patent/TWI560291B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
TW102105707A 2012-02-22 2013-02-19 磁性材濺鍍靶及其製造方法 TW201400630A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012036562 2012-02-22

Publications (2)

Publication Number Publication Date
TW201400630A TW201400630A (zh) 2014-01-01
TWI560291B true TWI560291B (zh) 2016-12-01

Family

ID=49005655

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105707A TW201400630A (zh) 2012-02-22 2013-02-19 磁性材濺鍍靶及其製造方法

Country Status (7)

Country Link
US (1) US9761422B2 (zh)
JP (1) JP5829747B2 (zh)
CN (1) CN104145042B (zh)
MY (1) MY169053A (zh)
SG (1) SG11201404314WA (zh)
TW (1) TW201400630A (zh)
WO (1) WO2013125469A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY165512A (en) 2010-07-29 2018-03-28 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film, and process for producing same
US20150014155A1 (en) * 2012-02-23 2015-01-15 Jx Nippon Mining & Metals Corporation Ferromagnetic Material Sputtering Target Containing Chromium Oxide
KR20180088491A (ko) 2013-11-28 2018-08-03 제이엑스금속주식회사 자성재 스퍼터링 타깃 및 그 제조 방법
JP6359662B2 (ja) * 2014-07-25 2018-07-18 Ｊｘ金属株式会社 磁性体薄膜形成用スパッタリングターゲット
JP6366095B2 (ja) * 2014-07-29 2018-08-01 株式会社フルヤ金属 磁気記録媒体用スパッタリングターゲット
JP6504605B2 (ja) * 2015-11-27 2019-04-24 田中貴金属工業株式会社 スパッタリングターゲット
WO2017141558A1 (ja) 2016-02-19 2017-08-24 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット及び磁性薄膜
MY189794A (en) * 2016-03-31 2022-03-08 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
JP2017224371A (ja) * 2016-06-15 2017-12-21 昭和電工株式会社 磁気記録媒体及び磁気記憶装置
JP6734399B2 (ja) * 2016-12-28 2020-08-05 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法
JP6971901B2 (ja) * 2018-03-27 2021-11-24 Ｊｘ金属株式会社 スパッタリングターゲット
CN110004421A (zh) * 2019-03-31 2019-07-12 柳州呈奥科技有限公司 一种钴铁铌基靶材及其加工工艺
JP7317741B2 (ja) * 2020-02-07 2023-07-31 Ｊｘ金属株式会社 スパッタリングターゲット、磁性膜、及びスパッタリングターゲット作製用の原料混合粉末

Citations (3)

* Cited by examiner, † Cited by third party
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TW200930825A (en) * 2007-10-24 2009-07-16 Mitsui Mining & Smelting Co Sputtering target for magnetic recording film and manufacturing method of the same
WO2011102359A1 (ja) * 2010-02-19 2011-08-25 Jx日鉱日石金属株式会社 スパッタリングターゲット－バッキングプレート組立体
CN102270459A (zh) * 2010-05-26 2011-12-07 昭和电工株式会社 磁记录介质和磁记录再生装置

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JP3816595B2 (ja) 1996-09-18 2006-08-30 三井金属鉱業株式会社 スパッタリングターゲットの製造方法
JP2000234168A (ja) * 1998-12-07 2000-08-29 Japan Energy Corp 光ディスク保護膜形成用スパッタリングターゲット
JP2001076329A (ja) 1999-09-07 2001-03-23 Fuji Electric Co Ltd 磁気記録媒体およびその製造方法
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JP2006127621A (ja) 2004-10-28 2006-05-18 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体及びその製造方法
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JP5024661B2 (ja) 2007-03-26 2012-09-12 三菱マテリアル株式会社 パーティクル発生の少ない磁気記録膜形成用Ｃｏ基焼結合金スパッタリングターゲット
JP2009001860A (ja) 2007-06-21 2009-01-08 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット
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MY145087A (en) 2008-03-28 2011-12-30 Jx Nippon Mining & Metals Corp Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
WO2010101051A1 (ja) 2009-03-03 2010-09-10 日鉱金属株式会社 スパッタリングターゲット及びその製造方法
CN102333905B (zh) 2009-03-27 2013-09-04 吉坤日矿日石金属株式会社 非磁性材料粒子分散型强磁性材料溅射靶
WO2011016365A1 (ja) 2009-08-06 2011-02-10 Jx日鉱日石金属株式会社 無機物粒子分散型スパッタリングターゲット
MY149640A (en) 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
SG181632A1 (en) 2009-12-25 2012-07-30 Jx Nippon Mining & Metals Corp Sputtering target with reduced particle generation and method of producing said target
SG175953A1 (en) 2010-01-21 2011-12-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target
JP5240228B2 (ja) 2010-04-09 2013-07-17 Ｔｄｋ株式会社 スパッタリングターゲット、及び、垂直磁気記録媒体の製造方法
US8679268B2 (en) 2010-07-20 2014-03-25 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
US9181617B2 (en) 2010-07-20 2015-11-10 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
MY165512A (en) 2010-07-29 2018-03-28 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film, and process for producing same
JP5226155B2 (ja) 2010-08-31 2013-07-03 Ｊｘ日鉱日石金属株式会社 Ｆｅ−Ｐｔ系強磁性材スパッタリングターゲット
CN103038388B (zh) 2010-09-03 2015-04-01 吉坤日矿日石金属株式会社 强磁性材料溅射靶
US20130220804A1 (en) 2010-12-09 2013-08-29 Jx Nippon Mining & Metals Corporation Ferromagnetic Material Sputtering Target
WO2012081363A1 (ja) 2010-12-15 2012-06-21 Jx日鉱日石金属株式会社 強磁性材スパッタリングターゲット及びその製造方法
US20130206591A1 (en) 2010-12-17 2013-08-15 Jx Nippon Mining & Metals Corporation Sputtering Target for Magnetic Recording Film and Method for Producing Same
MY161232A (en) 2010-12-20 2017-04-14 Jx Nippon Mining & Metals Corp Fe-pt-based ferromagnetic sputtering target and method for producing same
JP5009447B1 (ja) 2010-12-21 2012-08-22 Ｊｘ日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
US20130213802A1 (en) 2010-12-22 2013-08-22 Jx Nippon Mining & Metals Corporation Sintered Compact Sputtering Target
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200930825A (en) * 2007-10-24 2009-07-16 Mitsui Mining & Smelting Co Sputtering target for magnetic recording film and manufacturing method of the same
WO2011102359A1 (ja) * 2010-02-19 2011-08-25 Jx日鉱日石金属株式会社 スパッタリングターゲット－バッキングプレート組立体
CN102270459A (zh) * 2010-05-26 2011-12-07 昭和电工株式会社 磁记录介质和磁记录再生装置

Also Published As

Publication number Publication date
US20150021175A1 (en) 2015-01-22
JP5829747B2 (ja) 2015-12-09
WO2013125469A1 (ja) 2013-08-29
US9761422B2 (en) 2017-09-12
SG11201404314WA (en) 2014-10-30
MY169053A (en) 2019-02-11
TW201400630A (zh) 2014-01-01
CN104145042B (zh) 2016-08-24
JPWO2013125469A1 (ja) 2015-07-30
CN104145042A (zh) 2014-11-12

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