SG10202112738PA - Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents
Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG10202112738PA SG10202112738PA SG10202112738PA SG10202112738PA SG10202112738PA SG 10202112738P A SG10202112738P A SG 10202112738PA SG 10202112738P A SG10202112738P A SG 10202112738PA SG 10202112738P A SG10202112738P A SG 10202112738PA SG 10202112738P A SG10202112738P A SG 10202112738PA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- reflective
- substrate
- semiconductor device
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121485 | 2017-06-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202112738PA true SG10202112738PA (en) | 2021-12-30 |
Family
ID=64735657
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202112738PA SG10202112738PA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
SG11201911415VA SG11201911415VA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201911415VA SG11201911415VA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US11454878B2 (fr) |
JP (2) | JP7118962B2 (fr) |
KR (2) | KR20240046292A (fr) |
SG (2) | SG10202112738PA (fr) |
TW (2) | TW202309649A (fr) |
WO (1) | WO2018235721A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7484826B2 (ja) | 2021-06-18 | 2024-05-16 | 信越化学工業株式会社 | 反射型マスクブランク、及び反射型マスクの製造方法 |
US20230032950A1 (en) * | 2021-07-30 | 2023-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Euv photo masks and manufacturing method thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110607A (en) | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
JP2004331998A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | 多層膜成膜方法、反射鏡及び露光装置 |
ATE538491T1 (de) * | 2003-10-15 | 2012-01-15 | Nikon Corp | Mehrschichtiger filmreflexionsspiegel, herstellungsverfahren für einen mehrschichtigen filmreflexionsspiegel und belichtungssystem |
JP2005250187A (ja) * | 2004-03-05 | 2005-09-15 | Nikon Corp | 多層膜ミラー及びeuv露光装置 |
KR100699858B1 (ko) * | 2005-08-03 | 2007-03-27 | 삼성전자주식회사 | 극자외선 리소그래피용 반사 디바이스 및 그 제조 방법 및이를 적용한 극자외선 리소그래피용 마스크, 프로젝션광학계 및 리소그래피 장치 |
US7504185B2 (en) | 2005-10-03 | 2009-03-17 | Asahi Glass Company, Limited | Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography |
JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
JP5616265B2 (ja) * | 2011-03-25 | 2014-10-29 | Hoya株式会社 | 薄膜の成膜方法、マスクブランクの製造方法及び転写用マスクの製造方法 |
JP6460617B2 (ja) | 2012-02-10 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 |
US9274411B2 (en) * | 2012-06-05 | 2016-03-01 | SK Hynix Inc. | Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same |
JP2014229825A (ja) * | 2013-05-24 | 2014-12-08 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランクの製造方法および、該マスクブランク用の反射層付基板の製造方法 |
WO2015037564A1 (fr) * | 2013-09-11 | 2015-03-19 | Hoya株式会社 | Substrat ayant un film réfléchissant multicouche, ébauche de masque réfléchissant pour lithographie euv, masque réfléchissant pour lithographie euv, procédé de fabrication de masque réfléchissant pour lithographie euv, et procédé de fabrication de dispositif à semi-conducteurs |
US9798050B2 (en) | 2013-09-27 | 2017-10-24 | Hoya Corporation | Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device |
US10347485B2 (en) * | 2014-09-17 | 2019-07-09 | Hoya Corporation | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device |
JP2017116931A (ja) * | 2015-12-17 | 2017-06-29 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
CN109643056B (zh) * | 2016-08-26 | 2022-05-03 | Hoya株式会社 | 掩模坯料、相移掩模、相移掩模的制造方法及半导体器件的制造方法 |
-
2018
- 2018-06-14 WO PCT/JP2018/022756 patent/WO2018235721A1/fr active Application Filing
- 2018-06-14 KR KR1020247010347A patent/KR20240046292A/ko active Search and Examination
- 2018-06-14 JP JP2019525523A patent/JP7118962B2/ja active Active
- 2018-06-14 KR KR1020197035605A patent/KR102653352B1/ko active IP Right Grant
- 2018-06-14 SG SG10202112738PA patent/SG10202112738PA/en unknown
- 2018-06-14 SG SG11201911415VA patent/SG11201911415VA/en unknown
- 2018-06-14 US US16/625,569 patent/US11454878B2/en active Active
- 2018-06-21 TW TW111141292A patent/TW202309649A/zh unknown
- 2018-06-21 TW TW107121261A patent/TWI784012B/zh active
-
2022
- 2022-08-03 JP JP2022123750A patent/JP7368564B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20200018428A (ko) | 2020-02-19 |
KR102653352B1 (ko) | 2024-04-02 |
TWI784012B (zh) | 2022-11-21 |
KR20240046292A (ko) | 2024-04-08 |
TW201905580A (zh) | 2019-02-01 |
JPWO2018235721A1 (ja) | 2020-04-23 |
JP2022159362A (ja) | 2022-10-17 |
SG11201911415VA (en) | 2020-01-30 |
JP7118962B2 (ja) | 2022-08-16 |
US20210247688A1 (en) | 2021-08-12 |
WO2018235721A1 (fr) | 2018-12-27 |
US11454878B2 (en) | 2022-09-27 |
JP7368564B2 (ja) | 2023-10-24 |
TW202309649A (zh) | 2023-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201807251SA (en) | Reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
SG11202011373SA (en) | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
SG10201911400WA (en) | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG10201911502WA (en) | Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
SG11202011370VA (en) | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method | |
SG11202106508PA (en) | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
SG11201505056WA (en) | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device | |
EP3106920A4 (fr) | Composition de résine active sensible à la lumière ou sensible au rayonnement, film actif sensible à la lumière ou sensible au rayonnement, ébauche de masque doté du film actif sensible à la lumière ou sensible au rayonnement, photomasque, procédé de formation de motif, procédé de fabrication de dispositif électronique et dispositif électronique | |
SG11202002853TA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
SG10201910166WA (en) | Manufacturing method of semiconductor device with metal film | |
SG10202009397WA (en) | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
SG11202005918UA (en) | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
SG10202000604QA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
SG10202002515QA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
EP3351605A4 (fr) | Feuille formant un premier film protecteur, procédé de formation de premier film protecteur, et procédé de fabrication de puce à semi-conducteur | |
SG11202004856XA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202109240PA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202002928WA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
SG11202107980SA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202101338UA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
EP3418424A4 (fr) | Substrat semi-conducteur composite, film formant pellicule et procédé de fabrication de substrat semi-conducteur composite | |
SG11201911415VA (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG11202007053XA (en) | Manufacturing method for semiconductor device, and adhesive film | |
SG11202109244UA (en) | Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG11202007994YA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device |