SG10201602315RA - Method of dividing wafer - Google Patents

Method of dividing wafer

Info

Publication number
SG10201602315RA
SG10201602315RA SG10201602315RA SG10201602315RA SG10201602315RA SG 10201602315R A SG10201602315R A SG 10201602315RA SG 10201602315R A SG10201602315R A SG 10201602315RA SG 10201602315R A SG10201602315R A SG 10201602315RA SG 10201602315R A SG10201602315R A SG 10201602315RA
Authority
SG
Singapore
Prior art keywords
dividing wafer
wafer
dividing
Prior art date
Application number
SG10201602315RA
Other languages
English (en)
Inventor
Miyata Satoshi
Tanaka Makoto
Chanvilai Sombat
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201602315RA publication Critical patent/SG10201602315RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064—Devices for the automatic drive or the program control of the machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
SG10201602315RA 2015-03-31 2016-03-24 Method of dividing wafer SG10201602315RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015071638A JP2016192494A (ja) 2015-03-31 2015-03-31 ウエーハの分割方法

Publications (1)

Publication Number Publication Date
SG10201602315RA true SG10201602315RA (en) 2016-10-28

Family

ID=57015567

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201602315RA SG10201602315RA (en) 2015-03-31 2016-03-24 Method of dividing wafer

Country Status (5)

Country Link
US (1) US9653366B2 (zh)
JP (1) JP2016192494A (zh)
CN (1) CN106024709B (zh)
MY (1) MY176318A (zh)
SG (1) SG10201602315RA (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6964945B2 (ja) * 2018-01-05 2021-11-10 株式会社ディスコ 加工方法
JP6968501B2 (ja) * 2018-01-26 2021-11-17 株式会社ディスコ 切削装置のセットアップ方法
CN113290484B (zh) * 2018-02-08 2023-04-25 株式会社东京精密 切割装置、切割方法以及切割带
JP7001493B2 (ja) * 2018-02-26 2022-01-19 株式会社ディスコ 撮像画像形成ユニット
JP2019202356A (ja) * 2018-05-21 2019-11-28 株式会社ディスコ 被加工物の加工方法
JP2020038912A (ja) * 2018-09-05 2020-03-12 株式会社ディスコ ウェーハ認識方法
JP7368098B2 (ja) * 2019-04-17 2023-10-24 株式会社ディスコ ウエーハの加工方法
JP7300938B2 (ja) 2019-09-02 2023-06-30 株式会社ディスコ カーフの認識方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917752A (ja) * 1995-06-28 1997-01-17 Sony Corp 偏平な被切削物の切断方法及びその装置
JPH1110481A (ja) * 1997-06-17 1999-01-19 Disco Abrasive Syst Ltd 被加工物の厚さ計測手段付き切削装置及び被加工物の切削方法
JP4394210B2 (ja) * 1999-09-08 2010-01-06 株式会社ディスコ 切削方法
US6946326B2 (en) * 2000-12-05 2005-09-20 Analog Devices, Inc. Method and device for protecting micro electromechanical systems structures during dicing of a wafer
JP2002329965A (ja) * 2001-05-07 2002-11-15 New Create Kk 薄膜積層体の製造方法および製造装置
JP4549654B2 (ja) 2003-11-04 2010-09-22 株式会社ディスコ 切削ブレードのセットアップ方法
JP2005203540A (ja) * 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd ウエーハの切削方法
JP2009010178A (ja) * 2007-06-28 2009-01-15 Disco Abrasive Syst Ltd ウェーハの加工方法
JP5340808B2 (ja) * 2009-05-21 2013-11-13 株式会社ディスコ 半導体ウエーハのレーザ加工方法
JP5389604B2 (ja) 2009-10-20 2014-01-15 株式会社ディスコ 切削装置における切削ブレードの消耗量管理方法
JP5645593B2 (ja) * 2010-10-21 2014-12-24 株式会社ディスコ ウエーハの分割方法
JP5717575B2 (ja) 2011-07-28 2015-05-13 株式会社ディスコ 切削ブレードの外径サイズ検出方法
JP5858684B2 (ja) * 2011-08-15 2016-02-10 株式会社ディスコ 切削方法
JP6078272B2 (ja) * 2012-09-10 2017-02-08 株式会社ディスコ ウエーハの加工方法
JP6039512B2 (ja) * 2013-07-18 2016-12-07 Ｔｏｗａ株式会社 電子部品製造用の切削装置及び切削方法
JP2016001677A (ja) * 2014-06-12 2016-01-07 株式会社ディスコ ウエーハの加工方法
JP6328513B2 (ja) * 2014-07-28 2018-05-23 株式会社ディスコ ウエーハの加工方法

Also Published As

Publication number Publication date
MY176318A (en) 2020-07-28
US9653366B2 (en) 2017-05-16
CN106024709A (zh) 2016-10-12
CN106024709B (zh) 2021-05-07
JP2016192494A (ja) 2016-11-10
US20160293501A1 (en) 2016-10-06

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