JP7368098B2 - ウエーハの加工方法 - Google Patents
ウエーハの加工方法 Download PDFInfo
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- JP7368098B2 JP7368098B2 JP2019078270A JP2019078270A JP7368098B2 JP 7368098 B2 JP7368098 B2 JP 7368098B2 JP 2019078270 A JP2019078270 A JP 2019078270A JP 2019078270 A JP2019078270 A JP 2019078270A JP 7368098 B2 JP7368098 B2 JP 7368098B2
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- Japan
- Prior art keywords
- wafer
- dividing line
- cutting
- outermost
- planned
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
- B26D1/04—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/04—Processes
- Y10T83/0524—Plural cutting steps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Forests & Forestry (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
2:基台
3:ウエーハカセット
4:操作手段
5:搬出入手段
6:表示手段
7:仮置き手段
8:搬送手段
9:チャックテーブル
10:ウエーハ
12:デバイス
14:分割予定ライン
16:ノッチ
18:特徴点
20:撮像手段
30:切削手段
32:切削ブレード
40:洗浄手段
41:搬送手段
Claims (4)
- 複数のデバイスが分割予定ラインによって区画され表面に形成されたウエーハを個々のデバイスチップに分割するウエーハの加工方法であって、
ウエーハを保持手段に保持する保持工程と、
分割予定ラインに関連する領域を撮像手段で撮像し、切削ブレードと分割予定ラインとを一致させるアライメント工程と、
切削ブレードを分割予定ラインに位置付けて切削する切削工程と、
を含み、
該アライメント工程の前、又は後に、最も外側にある最外分割予定ラインを検出する最外側検出工程を実施し、
分割予定ラインが切削され形成された切削溝を該撮像手段によって撮像し、撮像された分割予定ラインが、切削工程の後の工程においても特定可能な空切りを含まない最外分割予定ラインから数えて何番目の分割予定ラインの切削溝であるかが記憶される切削溝記憶工程が含まれるウエーハの加工方法。 - 該最外側検出工程は、ウエーハに形成された特徴点と該最外分割予定ラインとの位置関係情報を予め記憶しておき、該撮像手段によって撮像されたウエーハの該特徴点と該位置関係情報とに基づいて該最外分割予定ラインを検出する請求項1に記載のウエーハの加工方法。
- 該特徴点は、ウエーハの結晶方位を示すための形状によって特定される請求項2に記載のウエーハの加工方法。
- 該切削工程において、該最外側検出工程によって検出された最外分割予定ラインから順次切削加工が実施される請求項1乃至3のいずれかに記載のウエーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019078270A JP7368098B2 (ja) | 2019-04-17 | 2019-04-17 | ウエーハの加工方法 |
ATA50321/2020A AT522487B1 (de) | 2019-04-17 | 2020-04-16 | Waferverarbeitungsverfahren |
DE102020204898.3A DE102020204898A1 (de) | 2019-04-17 | 2020-04-17 | Waferbearbeitungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019078270A JP7368098B2 (ja) | 2019-04-17 | 2019-04-17 | ウエーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020177994A JP2020177994A (ja) | 2020-10-29 |
JP7368098B2 true JP7368098B2 (ja) | 2023-10-24 |
Family
ID=72660208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019078270A Active JP7368098B2 (ja) | 2019-04-17 | 2019-04-17 | ウエーハの加工方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7368098B2 (ja) |
AT (1) | AT522487B1 (ja) |
DE (1) | DE102020204898A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004806A (ja) | 2006-06-23 | 2008-01-10 | Disco Abrasive Syst Ltd | ウエーハの加工結果管理方法 |
JP2009021317A (ja) | 2007-07-11 | 2009-01-29 | Disco Abrasive Syst Ltd | 加工装置のアライメント方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224296A (ja) * | 1993-01-27 | 1994-08-12 | Sumitomo Electric Ind Ltd | 半導体ウェーハのダイシング方法及び装置 |
JP3076179B2 (ja) * | 1993-07-26 | 2000-08-14 | 株式会社ディスコ | ダイシング装置 |
JPH09139362A (ja) * | 1995-11-10 | 1997-05-27 | Disco Abrasive Syst Ltd | ダイシング方法 |
JP6084883B2 (ja) * | 2013-04-08 | 2017-02-22 | 株式会社ディスコ | 円形板状物の分割方法 |
JP6328513B2 (ja) * | 2014-07-28 | 2018-05-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016082162A (ja) * | 2014-10-21 | 2016-05-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6388823B2 (ja) * | 2014-12-01 | 2018-09-12 | 株式会社ディスコ | レーザー加工装置 |
JP2016192494A (ja) * | 2015-03-31 | 2016-11-10 | 株式会社ディスコ | ウエーハの分割方法 |
JP6870974B2 (ja) * | 2016-12-08 | 2021-05-12 | 株式会社ディスコ | 被加工物の分割方法 |
JP2018121031A (ja) * | 2017-01-27 | 2018-08-02 | 株式会社ディスコ | レーザー加工装置 |
JP6907011B2 (ja) * | 2017-04-24 | 2021-07-21 | 株式会社ディスコ | レーザー加工装置、及びレーザー加工方法 |
JP6918418B2 (ja) * | 2017-09-08 | 2021-08-11 | 株式会社ディスコ | ウェーハの加工方法 |
-
2019
- 2019-04-17 JP JP2019078270A patent/JP7368098B2/ja active Active
-
2020
- 2020-04-16 AT ATA50321/2020A patent/AT522487B1/de active
- 2020-04-17 DE DE102020204898.3A patent/DE102020204898A1/de active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008004806A (ja) | 2006-06-23 | 2008-01-10 | Disco Abrasive Syst Ltd | ウエーハの加工結果管理方法 |
JP2009021317A (ja) | 2007-07-11 | 2009-01-29 | Disco Abrasive Syst Ltd | 加工装置のアライメント方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2020177994A (ja) | 2020-10-29 |
AT522487B1 (de) | 2022-08-15 |
AT522487A2 (de) | 2020-11-15 |
DE102020204898A1 (de) | 2020-10-22 |
AT522487A3 (de) | 2022-04-15 |
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