SG10201600720TA - Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same - Google Patents

Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Info

Publication number
SG10201600720TA
SG10201600720TA SG10201600720TA SG10201600720TA SG10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA SG 10201600720T A SG10201600720T A SG 10201600720TA
Authority
SG
Singapore
Prior art keywords
constructions
producing
methods
same
devices including
Prior art date
Application number
SG10201600720TA
Other languages
English (en)
Inventor
Vishwanath Bhat
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG10201600720TA publication Critical patent/SG10201600720TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Ceramic Products (AREA)
SG10201600720TA 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same SG10201600720TA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/743,246 US20080272421A1 (en) 2007-05-02 2007-05-02 Methods, constructions, and devices including tantalum oxide layers

Publications (1)

Publication Number Publication Date
SG10201600720TA true SG10201600720TA (en) 2016-02-26

Family

ID=39683541

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201600720TA SG10201600720TA (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same
SG2012057055A SG183679A1 (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012057055A SG183679A1 (en) 2007-05-02 2008-04-29 Constructions and devices including tantalum oxide layers on niobium nitride and methods for producing the same

Country Status (7)

Country Link
US (1) US20080272421A1 (enExample)
JP (1) JP5392250B2 (enExample)
KR (1) KR101234970B1 (enExample)
CN (1) CN101675489A (enExample)
SG (2) SG10201600720TA (enExample)
TW (1) TWI411096B (enExample)
WO (1) WO2008137401A1 (enExample)

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WO2012054042A1 (en) * 2010-10-21 2012-04-26 Hewlett-Packard Development Company, L.P. Method of forming a nano-structure
US9611559B2 (en) 2010-10-21 2017-04-04 Hewlett-Packard Development Company, L.P. Nano-structure and method of making the same
US20170267520A1 (en) 2010-10-21 2017-09-21 Hewlett-Packard Development Company, L.P. Method of forming a micro-structure
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US10388721B2 (en) * 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
KR102449895B1 (ko) * 2018-05-18 2022-09-30 삼성전자주식회사 반도체 장치와 그 제조 방법
KR102789286B1 (ko) 2019-03-29 2025-04-01 삼성전자주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
KR102735218B1 (ko) 2019-06-11 2024-11-27 삼성전자주식회사 집적회로 장치 및 그 제조 방법
KR102760675B1 (ko) 2019-11-01 2025-02-04 삼성전자주식회사 반도체 메모리 소자 및 그의 제조방법
EP4073831A4 (en) * 2019-12-09 2024-01-10 Entegris, Inc. DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS
CN111534808A (zh) * 2020-05-19 2020-08-14 合肥安德科铭半导体科技有限公司 一种含Ta薄膜的原子层沉积方法及其产物
KR102706512B1 (ko) 2020-07-30 2024-09-11 삼성전자주식회사 반도체 장치

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Also Published As

Publication number Publication date
CN101675489A (zh) 2010-03-17
SG183679A1 (en) 2012-09-27
US20080272421A1 (en) 2008-11-06
JP5392250B2 (ja) 2014-01-22
WO2008137401A1 (en) 2008-11-13
TW200905861A (en) 2009-02-01
KR101234970B1 (ko) 2013-02-20
JP2010526443A (ja) 2010-07-29
KR20100016114A (ko) 2010-02-12
TWI411096B (zh) 2013-10-01

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