KR100636563B1 - 니오브 콘덴서 및 그 제조방법 - Google Patents
니오브 콘덴서 및 그 제조방법 Download PDFInfo
- Publication number
- KR100636563B1 KR100636563B1 KR1020017007542A KR20017007542A KR100636563B1 KR 100636563 B1 KR100636563 B1 KR 100636563B1 KR 1020017007542 A KR1020017007542 A KR 1020017007542A KR 20017007542 A KR20017007542 A KR 20017007542A KR 100636563 B1 KR100636563 B1 KR 100636563B1
- Authority
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- South Korea
- Prior art keywords
- niobium
- layer
- dielectric
- capacitor
- electrode
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 91
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910052758 niobium Inorganic materials 0.000 title claims abstract description 66
- 239000010955 niobium Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 44
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 238000005121 nitriding Methods 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 8
- 239000008151 electrolyte solution Substances 0.000 claims description 4
- YTPZWYPLOCEZIX-UHFFFAOYSA-N [Nb]#[Nb] Chemical compound [Nb]#[Nb] YTPZWYPLOCEZIX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 10
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 description 5
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- YMUICPQENGUHJM-UHFFFAOYSA-N 2-methylpropyl(tripropyl)azanium Chemical compound CCC[N+](CCC)(CCC)CC(C)C YMUICPQENGUHJM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Powder Metallurgy (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
유전체층형성조건 | ||
예7 | 공기중 200 ℃ 수증기중 85 ℃ 질소분위기중 500 ℃ | 10 시간 10 시간 5 시간 |
예8 | 공기중 250 ℃ 수증기중 85 ℃ 질소분위기중 800 ℃ | 10 시간 1 시간 2 시간 |
예9 | 공기중 125 ℃ 수증기중 85 ℃ 질소분위기중 500 ℃ | 3 시간 1 시간 1 시간 |
예10 | 질소분위기중 800 ℃ | 10 분간 |
예11 | 공기중 80 ℃ | 50 시간 |
유전체층의 조성 (NbOX) | |||
예 | 제 1 층의 X*1 | 유전층에서 차지하는 제 1 층의 비율 (용량%) | 제 2 층의 몰비*2 (X=2.5):(X=2.0) |
2 3 4 5 6 7 8 9 10 11 12 | 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 | 0.8 0.8 0.8 0.8 1.7 0.9 8.7 0.02 12 0.008 1.2 | 1 0.8 1 0.8 1 0.8 1 0.8 1 1.25 1 0.33 1 0.25 1 4 1 1.02 1 6*3 1 5 |
예 | 용량(㎌) | LC(4V)(㎂) |
1 | 6 | 0.09 |
2 | 40 | 0.12 |
3 | 42 | 0.03*1 |
4 | 42 | 0.04*2 |
5 | 136 | 0.07 |
6 | 42 | 0.08 |
7 | 6 | 0.11 |
8 | 6 | 0.48 |
9 | 6 | 0.54 |
10 | 6 | 1.1 |
11 | 6 | 1.4 |
12 | 40 | 2.5 |
예 | 방치시간 (분) | 제 1 층 중의 X=2.5 의 함유량(%)*1 | 제 2 층 중의 X=2.5 와 X=2.0 의 합계 함유량*2(%) | 용량(㎌) | LC(㎂) |
4 | -- | 99 | 99 | 42 | 0.04 |
13 | 15 | 92 | 94 | 43 | 0.80 |
14 | 8 | 87 | 91 | 41 | 1.5 |
15 | 4 | 82 | 88 | 40 | 2.9 |
예 | 질화 조건 | 질화량 (중량 ppm) | ||
16 | 상온 | 상압 | 20시간 방치 | 300 |
17 | 400℃ | 상압 | 3시간 방치 | 4,000 |
18 | 600℃ | 상압 | 4시간 방치 | 19,000 |
19 | 1,000℃ | 상압 | 5시간 방치 | 103,000 |
20 | 300℃ | 상압 | 20분 방치 | 3,800 |
예 | 다른 쪽 전극 및 전도도 (S ·㎝-1) | 전극 형성 방법 |
21 | 테트라티오테트라센의 클로라닐 착체 2 ×100 | 좌기 화합물 용액 중으로의 침지 건조 반복 |
22 | 벤조피롤린올리고머의 클로라닐 착체 5 ×100 | 좌기 화합물 용액 중으로의 침지 건조 반복 |
23 | 폴리피롤의 톨루엔술폰산 도핑 5 ×101 | 피롤액 중에서의 산화반응 반복 |
24 | 폴리아닐린의 톨루엔술폰산 도핑 3 ×101 | 아닐린액 중에서의 산화반응 반복 |
25 | 폴리티오펜의 톨루엔술폰산 도핑 4 ×101 | 티오펜액 중에서의 산화반응 반복 |
26 | 이산화망간과 이산화납 (이산화납 95중량%) 5 ×101 | 질산망간의 열분해 (250℃ 2회 반복) 후, 아세트산납 용액에서의 산화반응 반복 |
예 | 용량 (100kHz) (μF) | LC값 (μA) | |
평균 | 편차 (2σ) | ||
16 | 140 | 1.0 | 0.1 |
17 | 129 | 0.7 | 0.1 |
18 | 134 | 1.0 | 0.1 |
19 | 118 | 1.3 | 0.2 |
20 | 137 | 0.8 | 0.1 |
21 | 108 | 1.4 | 0.2 |
22 | 106 | 1.5 | 0.2 |
23 | 130 | 0.8 | 0.1 |
24 | 120 | 0.9 | 0.1 |
25 | 119 | 0.8 | 0.1 |
26 | 131 | 0.7 | 0.1 |
27 (비) | 139 | 36 | 4.8 |
28 (비) | 109 | 44 | 8.2 |
29 (비) | 130 | 2.6 | 1.0 |
30 (비) | 120 | 3.2 | 1.7 |
예 | LC 값 (㎂) | |
평균 | 편차 (2σ) | |
31 | 1.8 | 0.3 |
32 | 0.5 | 0.1 |
33 (비) | 53 | 9.6 |
34 (비) | 16 | 4.2 |
35 (비) | 4.0 | 1.7 |
36 (비) | 2.4 | 1.1 |
Claims (16)
- 두 개의 전극, 및 상기 전극의 사이에 존재하는 유전체로 구성된 콘덴서에 있어서,상기 유전체가 산화 니오브 NbOX (X=2.5) 를 주성분으로 하는 제 1 층, 및 산화 니오브 NbOX (X=2.5) 와 NbOX (X=2.0) 의 혼합물을 주성분으로 하는 제 2 층의 이층구조로 이루어지는 것을 특징으로 하는 콘덴서.
- 제 1 항에 있어서,상기 유전체의 상기 제 1 층에 포함되는 상기 산화 니오브 NbOX (X=2.5) 의 함유량이 90 중량 % 이상인 것을 특징으로 하는 콘덴서.
- 제 1 항 또는 제 2 항에 있어서,상기 유전체의 상기 제 2 층에 포함되는 상기 산화 니오브 NbOX (X=2.5) 와 NbOX (X=2.0) 의 혼합물의 함유량이 90 중량 % 이상인 것을 특징으로 하는 콘덴서.
- 제 1 항 또는 제 2 항에 있어서,상기 유전체의 상기 제 2 층에 포함되는 상기 산화 니오브 NbOX (X=2.5) 와 NbOX (X=2.0) 의 몰비가 1:4 ∼ 4:1 인 것을 특징으로 하는 콘덴서.
- 제 1 항 또는 제 2 항에 있어서,상기 제 1 층과 상기 제 2 층으로 이루어지는 상기 유전체층 중 상기 제 1 층의 비율이 0.01 ∼ 10 용량 % 인 것을 특징으로 하는 콘덴서.
- 제 1 항 또는 제 2 항에 있어서,한쪽 전극이 니오브 또는 니오브의 일부를 질화한 질화 니오브로 구성되는 것을 특징으로 하는 콘덴서.
- 제 6 항에 있어서,상기 질화 니오브 중에 함유되는 결합 질소의 양이, 질화 니오브 중량에 기초하여 10 ∼ 200,000 중량 ppm 인 것을 특징으로 하는 콘덴서.
- 제 6 항에 있어서,상기 질화 니오브는 니오브를 질소 분위기 중 실온 ∼ 2,000 ℃ 에서 1 ∼ 50 시간 처리하여 니오브의 일부를 질화하는 방법에 의해 제조된 것을 특징으로 하는 콘덴서.
- 제 8 항에 있어서,상기 질화 니오브 전극이 상기 니오브를 소결한 후에, 상기 니오브의 일부를 질화하는 방법에 의해 제조된 것을 특징으로 하는 콘덴서.
- 제 6 항에 있어서,다른 쪽 전극이 전도도 10-2 S·cm-1 ∼ 103 S·cm-1 를 갖는 유기 반도체 및 무기 반도체 중에서 선택된 1 종 이상의 화합물로 구성되는 것을 특징으로 하는 콘덴서.
- 두 전극, 및 상기 두 전극 사이에 존재하는 유전체로 구성된 콘덴서의 제조 방법에 있어서,상기 두 전극 중의 한쪽 전극은 일부가 질화된 니오브의 소결체이고, 상기 유전체는 산화 니오브 NbOX (X=2.5) 를 주성분으로 하는 제 1 층과, 산화 니오브 NbOX (X=2.5) 와 NbOX (X=2.0) 의 혼합물을 주성분으로 하는 제 2 층의 이층구조로 이루어지며,니오브 분말의 성형체를 소결한 후, 얻어진 소결체를 질소 분위기 중에 방치함으로써, 상기 질화 니오브 소결체를 제조하는 것을 특징으로 하는 콘덴서의 제조방법.
- 제 11 항에 있어서,상기 질화 니오브 중에 함유되는 결합 질소량이, 질화 니오브 중량에 기초하여 10 ∼ 200,000 중량 ppm 이 되도록 질화하는 것을 특징으로 하는 콘덴서의 제조방법.
- 제 11 항 또는 제 12 항에 있어서,상기 유전체를 산화 니오브로 구성하는 것을 특징으로 하는 콘덴서의 제조방법.
- 제 13 항에 있어서,상기 유전체가 산화 니오브 NbOX (X=2.5) 를 주성분으로 하는 제 1 층, 및 산화 니오브 NbOX (X=2.5) 와 NbOX (X=2.0) 의 혼합물을 주성분으로 하는 제 2 층의 이층구조로 이루어지는 것을 특징으로 하는 콘덴서의 제조방법.
- 제 13 항에 있어서,일부가 질화한 니오브 전극을 전해액 중에서 화성 (化成) 하거나, 또는 일부가 질화한 니오브 전극상에서 니오브 함유 착체 (錯體) 를 가수분해, 열분해 또는 가수분해와 열분해의 양 쪽을 실시함으로써 상기 질화 니오브 전극상에 산화 니오브로 이루어지는 유전체를 형성하는 것을 특징으로 하는 콘덴서의 제조방법.
- 제 11 항 또는 제 12 항에 있어서,다른 쪽 전극을, 전도도 10-2 S·cm-1 ∼ 103 S·cm-1 를 갖는 유기 반도체 및 무기 반도체에서 선택된 1 종 이상의 화합물로 제조하는 것을 특징으로 하는 콘덴서의 제조방법.
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
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JP1998-355767 | 1998-12-15 | ||
JPJP-P-1998-00355767 | 1998-12-15 | ||
JP10355767A JP2000182899A (ja) | 1998-12-15 | 1998-12-15 | コンデンサの製造方法 |
JPJP-P-1998-00363883 | 1998-12-22 | ||
JP1998-363883 | 1998-12-22 | ||
JP36388398A JP4263795B2 (ja) | 1998-12-22 | 1998-12-22 | コンデンサ |
US11548699P | 1999-01-11 | 1999-01-11 | |
US60/115,486 | 1999-01-11 | ||
US11730699P | 1999-01-26 | 1999-01-26 | |
US60/117,306 | 1999-01-26 | ||
PCT/JP1999/006971 WO2000036617A1 (fr) | 1998-12-15 | 1999-12-13 | Condensateur au niobium et procede de fabrication correspondant |
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KR20010080767A KR20010080767A (ko) | 2001-08-22 |
KR100636563B1 true KR100636563B1 (ko) | 2006-10-19 |
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KR1020017007542A KR100636563B1 (ko) | 1998-12-15 | 1999-12-13 | 니오브 콘덴서 및 그 제조방법 |
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US (2) | US6529367B1 (ko) |
EP (1) | EP1158552B2 (ko) |
KR (1) | KR100636563B1 (ko) |
CN (1) | CN1201349C (ko) |
AT (1) | ATE343844T1 (ko) |
AU (1) | AU1684600A (ko) |
CA (1) | CA2360789C (ko) |
DE (1) | DE69933792T3 (ko) |
WO (1) | WO2000036617A1 (ko) |
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US6051044A (en) | 1998-05-04 | 2000-04-18 | Cabot Corporation | Nitrided niobium powders and niobium electrolytic capacitors |
ATE343844T1 (de) * | 1998-12-15 | 2006-11-15 | Showa Denko Kk | Niobkondensator und verfahren zu dessen herstellung |
US6375704B1 (en) | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
EP1259346A2 (en) | 2000-03-01 | 2002-11-27 | Cabot Corporation | Nitrided valve metals and processes for making the same |
AU2002247999B2 (en) * | 2001-04-12 | 2007-11-22 | Showa Denko K.K. | Production process for niobium capacitor |
US7149074B2 (en) * | 2001-04-19 | 2006-12-12 | Cabot Corporation | Methods of making a niobium metal oxide |
EP1411151A4 (en) | 2001-07-18 | 2007-06-06 | Showa Denko Kk | METALLIC TAPE CONSISTING OF AN ACID-EARTH METAL ALLOY AND CAPACITOR WITH THE SAME RIBBON |
JP3971266B2 (ja) * | 2002-08-02 | 2007-09-05 | ローム株式会社 | Nbコンデンサおよびこれの製造方法 |
JP2004143477A (ja) * | 2002-10-22 | 2004-05-20 | Cabot Supermetal Kk | ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ |
JP2004265951A (ja) * | 2003-02-25 | 2004-09-24 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
US7655214B2 (en) * | 2003-02-26 | 2010-02-02 | Cabot Corporation | Phase formation of oxygen reduced valve metal oxides and granulation methods |
JP4131709B2 (ja) * | 2003-03-28 | 2008-08-13 | 三洋電機株式会社 | 固体電解コンデンサの製造方法 |
EP1638891A2 (en) * | 2003-05-19 | 2006-03-29 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
US7142409B2 (en) * | 2003-07-28 | 2006-11-28 | Cabot Corporation | Nitrided valve metal material and method of making same |
JP4383228B2 (ja) * | 2004-03-31 | 2009-12-16 | 三洋電機株式会社 | 固体電解コンデンサ |
JP4804235B2 (ja) * | 2005-08-29 | 2011-11-02 | 三洋電機株式会社 | 固体電解コンデンサ素子、その製造方法および固体電解コンデンサ |
US20080272421A1 (en) * | 2007-05-02 | 2008-11-06 | Micron Technology, Inc. | Methods, constructions, and devices including tantalum oxide layers |
KR101036032B1 (ko) * | 2008-08-06 | 2011-05-19 | 신재혁 | 출입문의 급속 닫힘 방지용 안전장치 |
US8107218B2 (en) | 2009-06-02 | 2012-01-31 | Micron Technology, Inc. | Capacitors |
CN113168966B (zh) * | 2018-11-29 | 2024-01-16 | 京瓷Avx元器件公司 | 含有顺序气相沉积的电介质膜的固体电解电容器 |
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GB1219748A (en) | 1969-06-13 | 1971-01-20 | Standard Telephones Cables Ltd | Producing niobium or tantalum powder |
JPS5647687B2 (ko) | 1971-11-17 | 1981-11-11 | ||
JPS5383064A (en) | 1976-12-28 | 1978-07-22 | Fujitsu Ltd | Method of making electrolytic capacitor |
US4084965A (en) | 1977-01-05 | 1978-04-18 | Fansteel Inc. | Columbium powder and method of making the same |
JPS60121207A (ja) | 1983-12-01 | 1985-06-28 | Toyo Soda Mfg Co Ltd | 超微粒子の製造方法 |
JPH01167206A (ja) * | 1987-12-22 | 1989-06-30 | Kobe Steel Ltd | ニオブ窒化物の製造方法 |
DE3820960A1 (de) | 1988-06-22 | 1989-12-28 | Starck Hermann C Fa | Feinkoernige hochreine erdsaeuremetallpulver, verfahren zu ihrer herstellung sowie deren verwendung |
JPH03150822A (ja) | 1989-11-07 | 1991-06-27 | Nippon Chemicon Corp | 電解コンデンサ用アルミニウム電極 |
JPH059710A (ja) | 1991-07-02 | 1993-01-19 | Nippon Chemicon Corp | 電解コンデンサ用アルミニウム電極の製造方法 |
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JPH0653088A (ja) | 1992-08-03 | 1994-02-25 | Toyo Alum Kk | 電解コンデンサ用アルミニウム電極とその製造方法 |
US5448447A (en) * | 1993-04-26 | 1995-09-05 | Cabot Corporation | Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom |
JP3150822B2 (ja) | 1993-04-30 | 2001-03-26 | オークマ株式会社 | リニアモータ |
US6165623A (en) | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
JP3254163B2 (ja) * | 1997-02-28 | 2002-02-04 | 昭和電工株式会社 | コンデンサ |
ATE343844T1 (de) * | 1998-12-15 | 2006-11-15 | Showa Denko Kk | Niobkondensator und verfahren zu dessen herstellung |
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- 1999-12-13 KR KR1020017007542A patent/KR100636563B1/ko active IP Right Grant
- 1999-12-13 CA CA002360789A patent/CA2360789C/en not_active Expired - Fee Related
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CA2360789A1 (en) | 2000-06-22 |
US6529367B1 (en) | 2003-03-04 |
EP1158552B1 (en) | 2006-10-25 |
CN1201349C (zh) | 2005-05-11 |
US6661646B2 (en) | 2003-12-09 |
KR20010080767A (ko) | 2001-08-22 |
EP1158552A1 (en) | 2001-11-28 |
CA2360789C (en) | 2008-03-18 |
CN1334957A (zh) | 2002-02-06 |
EP1158552A4 (en) | 2005-08-17 |
ATE343844T1 (de) | 2006-11-15 |
DE69933792D1 (de) | 2006-12-07 |
EP1158552B2 (en) | 2011-05-18 |
DE69933792T2 (de) | 2007-09-13 |
DE69933792T3 (de) | 2012-09-27 |
AU1684600A (en) | 2000-07-03 |
WO2000036617A1 (fr) | 2000-06-22 |
US20030147203A1 (en) | 2003-08-07 |
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