KR100799634B1 - 니오브분, 니오브분 소결체 및 그것을 사용한 콘덴서 - Google Patents
니오브분, 니오브분 소결체 및 그것을 사용한 콘덴서 Download PDFInfo
- Publication number
- KR100799634B1 KR100799634B1 KR1020027000512A KR20027000512A KR100799634B1 KR 100799634 B1 KR100799634 B1 KR 100799634B1 KR 1020027000512 A KR1020027000512 A KR 1020027000512A KR 20027000512 A KR20027000512 A KR 20027000512A KR 100799634 B1 KR100799634 B1 KR 100799634B1
- Authority
- KR
- South Korea
- Prior art keywords
- capacitor
- niobium powder
- niobium
- less
- weight
- Prior art date
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 239000003990 capacitor Substances 0.000 title claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 238000005121 nitriding Methods 0.000 claims description 19
- 239000011593 sulfur Substances 0.000 claims description 17
- 229910052717 sulfur Inorganic materials 0.000 claims description 17
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 7
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 7
- 229910052758 niobium Inorganic materials 0.000 description 22
- 239000010955 niobium Substances 0.000 description 22
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000344 soap Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 238000001238 wet grinding Methods 0.000 description 2
- 125000004191 (C1-C6) alkoxy group Chemical group 0.000 description 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- BNPJNOLDKSAJSD-UHFFFAOYSA-N C(C)[N+](CC)(CC)CC.[B+3] Chemical compound C(C)[N+](CC)(CC)CC.[B+3] BNPJNOLDKSAJSD-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FXXDASIMKFCPBK-UHFFFAOYSA-N [B+3].C(C(C)C)[N+](CCC)(CCC)CCC Chemical compound [B+3].C(C(C)C)[N+](CCC)(CCC)CCC FXXDASIMKFCPBK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- BCAARMUWIRURQS-UHFFFAOYSA-N dicalcium;oxocalcium;silicate Chemical compound [Ca+2].[Ca+2].[Ca]=O.[O-][Si]([O-])([O-])[O-] BCAARMUWIRURQS-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- CDRCPXYWYPYVPY-UHFFFAOYSA-N iron(2+) oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Fe+2].[Fe+2].[Fe+2].[Fe+2] CDRCPXYWYPYVPY-UHFFFAOYSA-N 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002821 niobium Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- -1 polyoxyphenylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0068—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (12)
- 질화량이 500중량ppm 이상이고 7000중량ppm 이하이며, 평균 입자지름이 0.2㎛ 이상이고 3㎛ 미만이고,철, 니켈, 코발트, 규소, 나트륨, 칼륨 및 마그네슘의 함유량이 각각 100중량ppm 이하인 것을 특징으로 하는 콘덴서용 니오브분.
- 제1항에 있어서, 평균 입자지름이 0.5㎛ 이상이고 2㎛ 미만인 것을 특징으로 하는 콘덴서용 니오브분.
- 제1항 또는 제2항에 있어서, 질화량이 1000중량ppm 이상이고 3000중량ppm 이하인 것을 특징으로 하는 콘덴서용 니오브분.
- 제1항 또는 제2항에 있어서, 상기 원소의 함유량의 총합이 350중량ppm 이하인 것을 특징으로 하는 콘덴서용 니오브분.
- 제1항에 기재된 니오브분을 소결해서 이루어지고, 비누설전류값이 400[㎀/(㎌·V)] 이하인 것을 특징으로 하는 콘덴서용 소결체.
- 삭제
- 삭제
- 제5항에 있어서, 200[㎀/(㎌·V)] 이하인 비누설전류값을 갖는 것을 특징으로 하는 콘덴서용 소결체.
- 제5항 또는 제8항에 기재된 소결체를 한쪽 전극으로 하고, 이 전극과 다른 쪽 전극 사이에 유전체가 개재되어 있는 것을 특징으로 하는 콘덴서.
- 제9항에 있어서, 소결체로 이루어지는 전극의 표면 상에 유전체가 형성되어 있는 것을 특징으로 하는 콘덴서.
- 제9항에 있어서, 유전체가 산화니오브인 것을 특징으로 하는 콘덴서.
- 제10항에 있어서, 상기 유전체는 전해산화에 의해 니오브분 소결체의 표면 상에 형성된 산화니오브인 것을 특징으로 하는 콘덴서.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1999-00201058 | 1999-07-15 | ||
JP20105899 | 1999-07-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020016891A KR20020016891A (ko) | 2002-03-06 |
KR100799634B1 true KR100799634B1 (ko) | 2008-01-30 |
Family
ID=16434696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027000512A KR100799634B1 (ko) | 1999-07-15 | 2000-07-14 | 니오브분, 니오브분 소결체 및 그것을 사용한 콘덴서 |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP1204126B1 (ko) |
JP (1) | JP4527332B2 (ko) |
KR (1) | KR100799634B1 (ko) |
CN (1) | CN1221994C (ko) |
AT (1) | ATE304734T1 (ko) |
AU (1) | AU6017200A (ko) |
DE (1) | DE60022655T2 (ko) |
TW (1) | TW464889B (ko) |
WO (1) | WO2001006525A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101102872B1 (ko) * | 2009-07-17 | 2012-01-09 | 충남대학교산학협력단 | 자전연소반응을 이용한 나노 탄탈륨 분말의 제조방법 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19953946A1 (de) * | 1999-11-09 | 2001-05-10 | Starck H C Gmbh Co Kg | Kondensatorpulver |
GB2359081A (en) | 2000-02-11 | 2001-08-15 | Astrazeneca Uk Ltd | Pharmaceutically active thiazolopyrimidines |
EP1259346A2 (en) | 2000-03-01 | 2002-11-27 | Cabot Corporation | Nitrided valve metals and processes for making the same |
EP2221839B2 (en) † | 2000-08-10 | 2017-05-24 | Showa Denko K.K. | Niobium powder, sintered body and capacitor using the body |
EP1371074A4 (en) * | 2001-03-16 | 2007-04-18 | Showa Denko Kk | NIOBIUM FOR CAPACITOR AND CAPACITOR WITH FRESH BODY IN NIOBIUM |
KR100524166B1 (ko) * | 2001-05-15 | 2005-10-25 | 쇼와 덴코 가부시키가이샤 | 일산화 니오브분말, 일산화 니오브 소결체 및 일산화니오브 소결체를 사용한 콘덴서 |
AU2008200187B2 (en) * | 2001-05-15 | 2010-02-18 | Showa Denko K.K. | Niobium powder, niobium sintered body and capacitor using the sintered body |
US7737066B2 (en) | 2001-05-15 | 2010-06-15 | Showa Denko K.K. | Niobium monoxide powder, niobium monoxide sintered body and capacitor using the sintered body |
TW200519993A (en) | 2003-11-10 | 2005-06-16 | Showa Denko Kk | Niobium powder for capacitor, niobium sintered body, and capacitor |
CN1825509B (zh) * | 2005-02-23 | 2011-04-06 | 三洋电机株式会社 | 固体电解电容器及其制造方法 |
JP4969233B2 (ja) * | 2006-12-20 | 2012-07-04 | 三洋電機株式会社 | 固体電解コンデンサ及び固体電解コンデンサ用のニオブ製陽極リードの製造方法 |
CN100528418C (zh) * | 2008-01-11 | 2009-08-19 | 宁夏东方钽业股份有限公司 | 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极 |
US10329644B2 (en) | 2014-09-11 | 2019-06-25 | Ishihara Chemical Co., Ltd. | Ta—Nb alloy powder and anode element for solid electrolytic capacitor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998038660A1 (en) | 1997-02-28 | 1998-09-03 | Showa Denko Kabushiki Kaisha | Capacitor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01167206A (ja) * | 1987-12-22 | 1989-06-30 | Kobe Steel Ltd | ニオブ窒化物の製造方法 |
JPH10133791A (ja) * | 1996-10-28 | 1998-05-22 | Victor Co Of Japan Ltd | 光無線伝送装置、インターフェース及び携帯型情報端末 |
JP3233084B2 (ja) * | 1997-11-06 | 2001-11-26 | 日本電気株式会社 | 固体電解コンデンサの陽極体の製造方法 |
JP3196832B2 (ja) * | 1998-05-15 | 2001-08-06 | 日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
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- 2000-07-14 TW TW089114142A patent/TW464889B/zh not_active IP Right Cessation
- 2000-07-14 WO PCT/JP2000/004753 patent/WO2001006525A1/ja active IP Right Grant
- 2000-07-14 EP EP00946343A patent/EP1204126B1/en not_active Expired - Lifetime
- 2000-07-14 AU AU60172/00A patent/AU6017200A/en not_active Abandoned
- 2000-07-14 JP JP2001511699A patent/JP4527332B2/ja not_active Expired - Fee Related
- 2000-07-14 DE DE60022655T patent/DE60022655T2/de not_active Expired - Lifetime
- 2000-07-14 CN CNB008104247A patent/CN1221994C/zh not_active Expired - Fee Related
- 2000-07-14 AT AT00946343T patent/ATE304734T1/de not_active IP Right Cessation
- 2000-07-14 KR KR1020027000512A patent/KR100799634B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1998038660A1 (en) | 1997-02-28 | 1998-09-03 | Showa Denko Kabushiki Kaisha | Capacitor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101102872B1 (ko) * | 2009-07-17 | 2012-01-09 | 충남대학교산학협력단 | 자전연소반응을 이용한 나노 탄탈륨 분말의 제조방법 |
Also Published As
Publication number | Publication date |
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TW464889B (en) | 2001-11-21 |
JP4527332B2 (ja) | 2010-08-18 |
DE60022655T2 (de) | 2006-06-29 |
KR20020016891A (ko) | 2002-03-06 |
CN1363102A (zh) | 2002-08-07 |
ATE304734T1 (de) | 2005-09-15 |
CN1221994C (zh) | 2005-10-05 |
EP1204126A4 (en) | 2003-05-07 |
EP1204126A1 (en) | 2002-05-08 |
DE60022655D1 (de) | 2005-10-20 |
EP1204126B1 (en) | 2005-09-14 |
WO2001006525A1 (fr) | 2001-01-25 |
AU6017200A (en) | 2001-02-05 |
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