SG10201508134VA - Workpiece Processing Method - Google Patents

Workpiece Processing Method

Info

Publication number
SG10201508134VA
SG10201508134VA SG10201508134VA SG10201508134VA SG10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA SG 10201508134V A SG10201508134V A SG 10201508134VA
Authority
SG
Singapore
Prior art keywords
processing method
workpiece processing
workpiece
processing
Prior art date
Application number
SG10201508134VA
Other languages
English (en)
Inventor
Yoshihide Kihara
Toru Hisamatsu
Masanobu Honda
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG10201508134VA publication Critical patent/SG10201508134VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
SG10201508134VA 2014-10-07 2015-09-30 Workpiece Processing Method SG10201508134VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014206614A JP6382055B2 (ja) 2014-10-07 2014-10-07 被処理体を処理する方法

Publications (1)

Publication Number Publication Date
SG10201508134VA true SG10201508134VA (en) 2016-05-30

Family

ID=54199559

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201508134VA SG10201508134VA (en) 2014-10-07 2015-09-30 Workpiece Processing Method

Country Status (7)

Country Link
US (1) US9607811B2 (ko)
EP (1) EP3007205B1 (ko)
JP (1) JP6382055B2 (ko)
KR (1) KR102311575B1 (ko)
CN (2) CN105489483A (ko)
SG (1) SG10201508134VA (ko)
TW (1) TWI661464B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6559430B2 (ja) 2015-01-30 2019-08-14 東京エレクトロン株式会社 被処理体を処理する方法
JP6462477B2 (ja) 2015-04-27 2019-01-30 東京エレクトロン株式会社 被処理体を処理する方法
KR102362282B1 (ko) 2016-03-29 2022-02-11 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
KR20170114579A (ko) 2016-04-05 2017-10-16 주식회사 만도 전압 제어 방법 및 그 제어 시스템
JP6541618B2 (ja) * 2016-05-25 2019-07-10 東京エレクトロン株式会社 被処理体を処理する方法
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
JP6886940B2 (ja) * 2018-04-23 2021-06-16 東京エレクトロン株式会社 プラズマ処理方法
CN110581050A (zh) * 2018-06-07 2019-12-17 东京毅力科创株式会社 处理方法和等离子体处理装置
JP7345283B2 (ja) * 2018-07-26 2023-09-15 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7178918B2 (ja) 2019-01-30 2022-11-28 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、及び処理システム
JP7240946B2 (ja) * 2019-04-26 2023-03-16 株式会社トリケミカル研究所 酸化珪素膜形成方法
US11955318B2 (en) * 2021-03-12 2024-04-09 Applied Materials, Inc. Ash rate recovery method in plasma strip chamber

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04137725A (ja) * 1990-09-28 1992-05-12 Tonen Corp ガラス基板多結晶シリコン薄膜
JP4137725B2 (ja) * 2002-07-10 2008-08-20 松下電器産業株式会社 接合部材の加工寸法決定方法および装置
US7989354B2 (en) * 2007-06-08 2011-08-02 Tokyo Electron Limited Patterning method
US7790531B2 (en) * 2007-12-18 2010-09-07 Micron Technology, Inc. Methods for isolating portions of a loop of pitch-multiplied material and related structures
US8647722B2 (en) * 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP5698950B2 (ja) * 2009-10-23 2015-04-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4733214B1 (ja) * 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
EP2378543B1 (en) * 2010-04-14 2015-05-20 ASM Genitech Korea Ltd. Method of forming semiconductor patterns
KR20120001339A (ko) * 2010-06-29 2012-01-04 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8298951B1 (en) * 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US9666414B2 (en) * 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US9922802B2 (en) * 2012-02-20 2018-03-20 Tokyo Electron Limited Power supply system, plasma etching apparatus, and plasma etching method
KR102052936B1 (ko) * 2012-11-13 2019-12-06 삼성전자 주식회사 반도체 소자 제조 방법
JP6366454B2 (ja) * 2014-10-07 2018-08-01 東京エレクトロン株式会社 被処理体を処理する方法

Also Published As

Publication number Publication date
CN112133630A (zh) 2020-12-25
KR102311575B1 (ko) 2021-10-08
EP3007205B1 (en) 2017-08-16
JP6382055B2 (ja) 2018-08-29
CN105489483A (zh) 2016-04-13
US9607811B2 (en) 2017-03-28
EP3007205A1 (en) 2016-04-13
TWI661464B (zh) 2019-06-01
US20160099131A1 (en) 2016-04-07
JP2016076621A (ja) 2016-05-12
TW201626434A (zh) 2016-07-16
KR20160041764A (ko) 2016-04-18

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