SG10201506214XA - Etching method of multilayered film - Google Patents
Etching method of multilayered filmInfo
- Publication number
- SG10201506214XA SG10201506214XA SG10201506214XA SG10201506214XA SG10201506214XA SG 10201506214X A SG10201506214X A SG 10201506214XA SG 10201506214X A SG10201506214X A SG 10201506214XA SG 10201506214X A SG10201506214X A SG 10201506214XA SG 10201506214X A SG10201506214X A SG 10201506214XA
- Authority
- SG
- Singapore
- Prior art keywords
- etching method
- multilayered film
- multilayered
- film
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014162809A JP6454492B2 (ja) | 2014-08-08 | 2014-08-08 | 多層膜をエッチングする方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201506214XA true SG10201506214XA (en) | 2016-03-30 |
Family
ID=55267936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201506214XA SG10201506214XA (en) | 2014-08-08 | 2015-08-06 | Etching method of multilayered film |
Country Status (5)
Country | Link |
---|---|
US (1) | US9263239B1 (ja) |
JP (1) | JP6454492B2 (ja) |
KR (1) | KR101835683B1 (ja) |
CN (1) | CN105374756B (ja) |
SG (1) | SG10201506214XA (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6604911B2 (ja) * | 2016-06-23 | 2019-11-13 | 東京エレクトロン株式会社 | エッチング処理方法 |
JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
JP7158252B2 (ja) * | 2018-02-15 | 2022-10-21 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
JP2020068221A (ja) * | 2018-10-22 | 2020-04-30 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
JP6778822B2 (ja) * | 2018-10-26 | 2020-11-04 | 株式会社日立ハイテク | プラズマ処理方法 |
JP2022172753A (ja) | 2021-05-07 | 2022-11-17 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
TW202407797A (zh) | 2022-03-01 | 2024-02-16 | 日商東京威力科創股份有限公司 | 電漿處理方法及電漿處理裝置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5658972A (en) * | 1979-10-16 | 1981-05-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching method |
JPH0536645A (ja) * | 1991-07-25 | 1993-02-12 | Sony Corp | ドライエツチング方法 |
TW383427B (en) * | 1998-04-03 | 2000-03-01 | United Microelectronics Corp | Method for etching tantalum oxide |
JP4282391B2 (ja) * | 2003-07-09 | 2009-06-17 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
EP1780779A3 (en) * | 2005-10-28 | 2008-06-11 | Interuniversitair Microelektronica Centrum ( Imec) | A plasma for patterning advanced gate stacks |
US20070221616A1 (en) * | 2006-03-24 | 2007-09-27 | Yi-Tyng Wu | Etching method |
CN100428416C (zh) * | 2006-04-03 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
US8598040B2 (en) * | 2011-09-06 | 2013-12-03 | Lam Research Corporation | ETCH process for 3D flash structures |
JP6056136B2 (ja) * | 2011-09-07 | 2017-01-11 | セントラル硝子株式会社 | ドライエッチング方法 |
CN102738074B (zh) * | 2012-07-05 | 2014-07-02 | 中微半导体设备(上海)有限公司 | 半导体结构的形成方法 |
JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6096470B2 (ja) * | 2012-10-29 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6154820B2 (ja) * | 2012-11-01 | 2017-06-28 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6035117B2 (ja) * | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
-
2014
- 2014-08-08 JP JP2014162809A patent/JP6454492B2/ja active Active
-
2015
- 2015-07-28 KR KR1020150106596A patent/KR101835683B1/ko active IP Right Grant
- 2015-08-04 US US14/817,393 patent/US9263239B1/en not_active Expired - Fee Related
- 2015-08-06 SG SG10201506214XA patent/SG10201506214XA/en unknown
- 2015-08-07 CN CN201510484931.8A patent/CN105374756B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN105374756A (zh) | 2016-03-02 |
KR20160018366A (ko) | 2016-02-17 |
US20160042918A1 (en) | 2016-02-11 |
KR101835683B1 (ko) | 2018-03-07 |
JP2016039309A (ja) | 2016-03-22 |
US9263239B1 (en) | 2016-02-16 |
CN105374756B (zh) | 2019-01-15 |
JP6454492B2 (ja) | 2019-01-16 |
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