HK1218990A1 - 製作多晶片圖像傳感器的方法 - Google Patents

製作多晶片圖像傳感器的方法

Info

Publication number
HK1218990A1
HK1218990A1 HK16106906.2A HK16106906A HK1218990A1 HK 1218990 A1 HK1218990 A1 HK 1218990A1 HK 16106906 A HK16106906 A HK 16106906A HK 1218990 A1 HK1218990 A1 HK 1218990A1
Authority
HK
Hong Kong
Prior art keywords
wafer image
fabricating multi
fabricating
wafer
image
Prior art date
Application number
HK16106906.2A
Other languages
English (en)
Inventor
錢胤
戴森‧
‧戴
李瑾
陸震偉
霍華德‧
‧羅茲
Original Assignee
4275 Burton Dr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 4275 Burton Dr filed Critical 4275 Burton Dr
Publication of HK1218990A1 publication Critical patent/HK1218990A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK16106906.2A 2014-10-15 2016-06-15 製作多晶片圖像傳感器的方法 HK1218990A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/515,307 US9379159B2 (en) 2014-10-15 2014-10-15 Method of fabricating multi-wafer image sensor

Publications (1)

Publication Number Publication Date
HK1218990A1 true HK1218990A1 (zh) 2017-03-17

Family

ID=55749682

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16106906.2A HK1218990A1 (zh) 2014-10-15 2016-06-15 製作多晶片圖像傳感器的方法

Country Status (4)

Country Link
US (2) US9379159B2 (zh)
CN (1) CN105529341B (zh)
HK (1) HK1218990A1 (zh)
TW (1) TWI599026B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8743553B2 (en) * 2011-10-18 2014-06-03 Arctic Sand Technologies, Inc. Power converters with integrated capacitors
US9379159B2 (en) 2014-10-15 2016-06-28 Omnivision Technologies, Inc. Method of fabricating multi-wafer image sensor
JPWO2017002200A1 (ja) * 2015-06-30 2018-04-19 オリンパス株式会社 半導体装置
US9881956B2 (en) 2016-05-06 2018-01-30 International Business Machines Corporation Heterogeneous integration using wafer-to-wafer stacking with die size adjustment
WO2018186196A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
KR102510520B1 (ko) 2017-10-31 2023-03-15 삼성전자주식회사 이미지 센서
US10804202B2 (en) * 2019-02-18 2020-10-13 Sandisk Technologies Llc Bonded assembly including a semiconductor-on-insulator die and methods for making the same
CN110379799B (zh) * 2019-07-18 2020-04-03 武汉新芯集成电路制造有限公司 一种芯片结构、晶圆结构及其制造方法
US11456328B2 (en) 2019-10-09 2022-09-27 Omnivision Technologies, Inc. Stack chip air gap heat insulator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7749799B2 (en) * 2005-11-15 2010-07-06 California Institute Of Technology Back-illuminated imager and method for making electrical and optical connections to same
FR2904143A1 (fr) 2006-07-24 2008-01-25 St Microelectronics Sa Capteur d'images eclaire par la face arriere a temperature de substrat uniforme
US8212328B2 (en) * 2007-12-05 2012-07-03 Intellectual Ventures Ii Llc Backside illuminated image sensor
US8912017B2 (en) * 2011-05-10 2014-12-16 Ostendo Technologies, Inc. Semiconductor wafer bonding incorporating electrical and optical interconnects
EP2708021B1 (en) 2011-05-12 2019-07-10 DePuy Synthes Products, Inc. Image sensor with tolerance optimizing interconnects
US10269863B2 (en) * 2012-04-18 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for via last through-vias
US9142581B2 (en) * 2012-11-05 2015-09-22 Omnivision Technologies, Inc. Die seal ring for integrated circuit system with stacked device wafers
US9379159B2 (en) 2014-10-15 2016-06-28 Omnivision Technologies, Inc. Method of fabricating multi-wafer image sensor

Also Published As

Publication number Publication date
US9379159B2 (en) 2016-06-28
US9748308B2 (en) 2017-08-29
CN105529341A (zh) 2016-04-27
CN105529341B (zh) 2019-04-05
US20160111468A1 (en) 2016-04-21
TW201622121A (zh) 2016-06-16
US20160268333A1 (en) 2016-09-15
TWI599026B (zh) 2017-09-11

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