SE7909953L - Sett for tillverkning av en integrerad halvledaranordning - Google Patents

Sett for tillverkning av en integrerad halvledaranordning

Info

Publication number
SE7909953L
SE7909953L SE7909953A SE7909953A SE7909953L SE 7909953 L SE7909953 L SE 7909953L SE 7909953 A SE7909953 A SE 7909953A SE 7909953 A SE7909953 A SE 7909953A SE 7909953 L SE7909953 L SE 7909953L
Authority
SE
Sweden
Prior art keywords
angstrom
grown
layer
zones
minute
Prior art date
Application number
SE7909953A
Other languages
Unknown language ( )
English (en)
Other versions
SE454631B (sv
Inventor
A Casadei
M Camagni
F Bertotti
P Carmina
A Cuccia
V Prestileo
B Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of SE7909953L publication Critical patent/SE7909953L/sv
Publication of SE454631B publication Critical patent/SE454631B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
SE7909953A 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer SE454631B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Publications (2)

Publication Number Publication Date
SE7909953L true SE7909953L (sv) 1980-06-05
SE454631B SE454631B (sv) 1988-05-16

Family

ID=11229874

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7909953A SE454631B (sv) 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer

Country Status (5)

Country Link
DE (1) DE2948800A1 (sv)
FR (1) FR2443742A1 (sv)
GB (1) GB2037487A (sv)
IT (1) IT1101183B (sv)
SE (1) SE454631B (sv)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600130185A1 (it) 2016-12-22 2018-06-22 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1300768A (en) * 1969-07-29 1972-12-20 Fairchild Camera Instr Co Improvements in or relating to semiconductor structures

Also Published As

Publication number Publication date
DE2948800A1 (de) 1980-06-19
FR2443742A1 (fr) 1980-07-04
IT7830507A0 (it) 1978-12-04
GB2037487A (en) 1980-07-09
IT1101183B (it) 1985-09-28
FR2443742B1 (sv) 1985-03-08
SE454631B (sv) 1988-05-16

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