IT7830507A0 - Perfezionamento al procedimento diproduzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore eprodotto risultante. - Google Patents

Perfezionamento al procedimento diproduzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore eprodotto risultante.

Info

Publication number
IT7830507A0
IT7830507A0 IT7830507A IT3050778A IT7830507A0 IT 7830507 A0 IT7830507 A0 IT 7830507A0 IT 7830507 A IT7830507 A IT 7830507A IT 3050778 A IT3050778 A IT 3050778A IT 7830507 A0 IT7830507 A0 IT 7830507A0
Authority
IT
Italy
Prior art keywords
emmitter
improvement
breakdown voltage
resulting product
bipolar transistors
Prior art date
Application number
IT7830507A
Other languages
English (en)
Other versions
IT1101183B (it
Inventor
Carmina Paolo
Casadei Angelo
Cuccia Auretta
Camagni Mario
Prestileo Vincenzo
Bertotti Franco
Sanasi Brunello
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT30507/78A priority Critical patent/IT1101183B/it
Publication of IT7830507A0 publication Critical patent/IT7830507A0/it
Priority to SE7909953A priority patent/SE454631B/sv
Priority to DE19792948800 priority patent/DE2948800A1/de
Priority to FR7929737A priority patent/FR2443742A1/fr
Priority to GB7941857A priority patent/GB2037487A/en
Application granted granted Critical
Publication of IT1101183B publication Critical patent/IT1101183B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
IT30507/78A 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante IT1101183B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante
SE7909953A SE454631B (sv) 1978-12-04 1979-12-03 Sett for tillverkning av en integrerad halvledaranordning med den epitaxiella tillvexten uppdelad i tre separata steg stabiliserade vid tre olika temperaturer
DE19792948800 DE2948800A1 (de) 1978-12-04 1979-12-04 Verfahren zur herstellung integrierter, bipolarer transistoren mit erhoehter durchbruchspannung zwischen kollektor und emitter sowie dadurch hergestellter transistor
FR7929737A FR2443742A1 (fr) 1978-12-04 1979-12-04 Perfectionnement apporte au procede pour la production de transistors bipolaires integres a tension elevee de rupture collecteur-emetteur et produit ainsi obtenu
GB7941857A GB2037487A (en) 1978-12-04 1979-12-04 Method for producing an integrated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Publications (2)

Publication Number Publication Date
IT7830507A0 true IT7830507A0 (it) 1978-12-04
IT1101183B IT1101183B (it) 1985-09-28

Family

ID=11229874

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30507/78A IT1101183B (it) 1978-12-04 1978-12-04 Perfezionamento al procedimento di produzione per transistori bipolari intagrati con elevata tensione di breakdown collettore-emettitore e prodotto risultante

Country Status (5)

Country Link
DE (1) DE2948800A1 (it)
FR (1) FR2443742A1 (it)
GB (1) GB2037487A (it)
IT (1) IT1101183B (it)
SE (1) SE454631B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201600130185A1 (it) * 2016-12-22 2018-06-22 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore integrante un transistore a conduzione verticale, e dispositivo a semiconduttore

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1300768A (en) * 1969-07-29 1972-12-20 Fairchild Camera Instr Co Improvements in or relating to semiconductor structures

Also Published As

Publication number Publication date
GB2037487A (en) 1980-07-09
IT1101183B (it) 1985-09-28
SE454631B (sv) 1988-05-16
FR2443742B1 (it) 1985-03-08
DE2948800A1 (de) 1980-06-19
SE7909953L (sv) 1980-06-05
FR2443742A1 (fr) 1980-07-04

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227