CA1033468A - Combination of a bipolar transistor and a mos field effect transistor - Google Patents
Combination of a bipolar transistor and a mos field effect transistorInfo
- Publication number
- CA1033468A CA1033468A CA216,005A CA216005A CA1033468A CA 1033468 A CA1033468 A CA 1033468A CA 216005 A CA216005 A CA 216005A CA 1033468 A CA1033468 A CA 1033468A
- Authority
- CA
- Canada
- Prior art keywords
- combination
- field effect
- mos field
- transistor
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2363577A DE2363577A1 (en) | 1973-12-20 | 1973-12-20 | COMBINATION OF A BIPOLAR TRANSISTOR AND A MOS FIELD EFFECT TRANSISTOR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1033468A true CA1033468A (en) | 1978-06-20 |
Family
ID=5901421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA216,005A Expired CA1033468A (en) | 1973-12-20 | 1974-12-13 | Combination of a bipolar transistor and a mos field effect transistor |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5094887A (en) |
| AT (1) | AT340481B (en) |
| BE (1) | BE823686R (en) |
| CA (1) | CA1033468A (en) |
| CH (1) | CH586959A5 (en) |
| DE (1) | DE2363577A1 (en) |
| FR (1) | FR2255710B2 (en) |
| GB (1) | GB1481184A (en) |
| IT (1) | IT1046735B (en) |
| NL (1) | NL7416703A (en) |
| SE (1) | SE404853B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3470632D1 (en) * | 1983-02-03 | 1988-05-26 | Fairchild Camera Instr Co | High voltage mos/bipolar power transistor apparatus |
| DE3620686C2 (en) * | 1986-06-20 | 1999-07-22 | Daimler Chrysler Ag | Structured semiconductor body |
| US4857766A (en) * | 1987-10-30 | 1989-08-15 | International Business Machine Corporation | BiMos input circuit |
| WO2009019866A1 (en) * | 2007-08-07 | 2009-02-12 | Kaori Takakubo | Semiconductor device and method for driving the same |
-
1973
- 1973-12-20 DE DE2363577A patent/DE2363577A1/en not_active Withdrawn
-
1974
- 1974-11-15 AT AT917974A patent/AT340481B/en active
- 1974-11-27 GB GB51302/74A patent/GB1481184A/en not_active Expired
- 1974-12-11 CH CH1650774A patent/CH586959A5/xx not_active IP Right Cessation
- 1974-12-13 IT IT30529/74A patent/IT1046735B/en active
- 1974-12-13 CA CA216,005A patent/CA1033468A/en not_active Expired
- 1974-12-17 FR FR7441548A patent/FR2255710B2/fr not_active Expired
- 1974-12-19 JP JP49146687A patent/JPS5094887A/ja active Pending
- 1974-12-19 SE SE7416017A patent/SE404853B/en unknown
- 1974-12-20 BE BE151790A patent/BE823686R/en active
- 1974-12-20 NL NL7416703A patent/NL7416703A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| SE404853B (en) | 1978-10-30 |
| BE823686R (en) | 1975-04-16 |
| GB1481184A (en) | 1977-07-27 |
| FR2255710B2 (en) | 1979-02-23 |
| JPS5094887A (en) | 1975-07-28 |
| ATA917974A (en) | 1977-04-15 |
| CH586959A5 (en) | 1977-04-15 |
| AT340481B (en) | 1977-12-12 |
| SE7416017L (en) | 1975-06-23 |
| FR2255710A2 (en) | 1975-07-18 |
| IT1046735B (en) | 1980-07-31 |
| NL7416703A (en) | 1975-06-24 |
| DE2363577A1 (en) | 1975-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1001771A (en) | Method of mos transistor manufacture and resulting structure | |
| CA942432A (en) | Combined bipolar and field effect transistors | |
| CA965188A (en) | Field effect transistor | |
| CA1024266A (en) | Deep depletion insulated gate field effect transistors | |
| CA963980A (en) | Bipolar transistors and method of manufacture | |
| CA951796A (en) | Counter using insulated gate field effect transistors | |
| CA1011467A (en) | Complementary bipolar transistor structure and manufacture | |
| CA1034217A (en) | Field effect transistor amplifier | |
| CA1028067A (en) | Schottky gate field effect transistor | |
| CA1003121A (en) | Field effect transistor | |
| CA1027257A (en) | Overlay metallization field effect transistor | |
| CA967683A (en) | Voltage transient protection of field effect transistors | |
| CA1000872A (en) | Method of manufacturing of junction field effect transistor | |
| CA1004373A (en) | Process to manufacture mos transistors of high resistivity and low breakdown | |
| CA1012259A (en) | Reduction of second breakdown in planar transistors | |
| CA1024267A (en) | Bipolar transistor | |
| CA1009708A (en) | Hysteresis circuits using insulated gate field effect transistors | |
| CA1012658A (en) | Manufacture of an insulated gate field effect transistor | |
| CA967643A (en) | Circuits including combined field effect and bipolar transistors | |
| CA1033468A (en) | Combination of a bipolar transistor and a mos field effect transistor | |
| CA966231A (en) | Epitaxial outdiffusion technique for integrated bipolar and field effect transistors | |
| CA993567A (en) | Junction gated field effect transistor | |
| CA1005171A (en) | Bipolar transistor construction method | |
| CA1016665A (en) | Field effect transistor | |
| CA1000873A (en) | Bipolar transistor construction method |