BE823686R - BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE - Google Patents

BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE

Info

Publication number
BE823686R
BE823686R BE151790A BE151790A BE823686R BE 823686 R BE823686 R BE 823686R BE 151790 A BE151790 A BE 151790A BE 151790 A BE151790 A BE 151790A BE 823686 R BE823686 R BE 823686R
Authority
BE
Belgium
Prior art keywords
thin layer
bipolar transistor
made according
transistor made
layer technique
Prior art date
Application number
BE151790A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of BE823686R publication Critical patent/BE823686R/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
BE151790A 1973-12-20 1974-12-20 BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE BE823686R (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2363577A DE2363577A1 (en) 1973-12-20 1973-12-20 COMBINATION OF A BIPOLAR TRANSISTOR AND A MOS FIELD EFFECT TRANSISTOR

Publications (1)

Publication Number Publication Date
BE823686R true BE823686R (en) 1975-04-16

Family

ID=5901421

Family Applications (1)

Application Number Title Priority Date Filing Date
BE151790A BE823686R (en) 1973-12-20 1974-12-20 BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE

Country Status (11)

Country Link
JP (1) JPS5094887A (en)
AT (1) AT340481B (en)
BE (1) BE823686R (en)
CA (1) CA1033468A (en)
CH (1) CH586959A5 (en)
DE (1) DE2363577A1 (en)
FR (1) FR2255710B2 (en)
GB (1) GB1481184A (en)
IT (1) IT1046735B (en)
NL (1) NL7416703A (en)
SE (1) SE404853B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3470632D1 (en) * 1983-02-03 1988-05-26 Fairchild Camera Instr Co High voltage mos/bipolar power transistor apparatus
DE3620686C2 (en) * 1986-06-20 1999-07-22 Daimler Chrysler Ag Structured semiconductor body
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit
WO2009019866A1 (en) * 2007-08-07 2009-02-12 Kaori Takakubo Semiconductor device and method for driving the same

Also Published As

Publication number Publication date
FR2255710A2 (en) 1975-07-18
SE7416017L (en) 1975-06-23
CA1033468A (en) 1978-06-20
FR2255710B2 (en) 1979-02-23
JPS5094887A (en) 1975-07-28
NL7416703A (en) 1975-06-24
CH586959A5 (en) 1977-04-15
GB1481184A (en) 1977-07-27
SE404853B (en) 1978-10-30
IT1046735B (en) 1980-07-31
AT340481B (en) 1977-12-12
DE2363577A1 (en) 1975-06-26
ATA917974A (en) 1977-04-15

Similar Documents

Publication Publication Date Title
BE793045A (en) BIPOLAR ELECTRODES
IT1027593B (en) DEVICE TO STOP THE HEEL
BE797256A (en) IMPROVEMENTS RELATING TO OZONIZERS
TR18333A (en) ENZYMATIC HYDRAULIS OF THE NISASTAN IN GRANUEL
IT974235B (en) REMOVABLE BIPOLAR ELECTRODES
IT981240B (en) IMPROVEMENTS TO THE GRIDISTORS FOR HYPERFREQUENCES
HK47180A (en) Improvements in or relating to semiconductor devices
BR7405532D0 (en) BIPOLAR ELECTRODE
IT1019340B (en) PROCEDURE AND PLANT TO PRODUCE ISOPRENE
IT965061B (en) ANTIDEGRADANT COMPOSITIONS IN PARTICULAR ANTIOXIDANTS FOR ORGANIC SUBSTRAS
BE823686R (en) BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE
BE814252A (en) BIPOLAR TRANSISTOR MADE ACCORDING TO THIN LAYER TECHNIQUE
SE405527B (en) THYRISTOR
AT307371B (en) Bipolar electrode
IT985922B (en) PROCEDURE FOR THE DEPOSITION OF SEMICONDUCTIVE MATERIALS IN THE ELEMENTARY STATE
SE392992B (en) THYRISTOR
AT330297B (en) THYRISTOR
IT1048255B (en) COMPOSITION TO HAIR HAIR
BE821727A (en) BIPOLAR CELL
IT947130B (en) DEVICE FOR THE SEPARATION OF SINGLE ANULAR PIECES TO BE WORKED
IT944270B (en) PROCEDURE TO OBTAIN NOCLOROSILANE HYDROGE
SE419916B (en) POWER SEMICONDUCTOR ELEMENT
IT950689B (en) PROCEDURE TO STABILIZE PROPANOSULTONE
BE817255A (en) THYRISTOR
IT971999B (en) PROCEDURE TO STABILIZE THE TARTAR BY ELECTRODIALYSIS