IT8022253A0 - Procedimento per produrre silicio con proprieta' di semiconduttore. - Google Patents

Procedimento per produrre silicio con proprieta' di semiconduttore.

Info

Publication number
IT8022253A0
IT8022253A0 IT8022253A IT2225380A IT8022253A0 IT 8022253 A0 IT8022253 A0 IT 8022253A0 IT 8022253 A IT8022253 A IT 8022253A IT 2225380 A IT2225380 A IT 2225380A IT 8022253 A0 IT8022253 A0 IT 8022253A0
Authority
IT
Italy
Prior art keywords
procedure
producing silicon
semiconductor properties
semiconductor
properties
Prior art date
Application number
IT8022253A
Other languages
English (en)
Other versions
IT1130652B (it
Inventor
Schink Norbert
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19792922055 external-priority patent/DE2922055A1/de
Priority claimed from DE19792922063 external-priority patent/DE2922063A1/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of IT8022253A0 publication Critical patent/IT8022253A0/it
Application granted granted Critical
Publication of IT1130652B publication Critical patent/IT1130652B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/023—Deep level dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
IT22253/80A 1979-05-30 1980-05-22 Procedimento per produrre silicio con proprieta' di semiconduttore IT1130652B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19792922055 DE2922055A1 (de) 1979-05-30 1979-05-30 Verfahren zum herstellen von halbleitereigenschaften aufweisendem silicium
DE19792922063 DE2922063A1 (de) 1979-05-30 1979-05-30 Verfahren zum herstellen von halbleitereigenschaften aufweisendem silicium

Publications (2)

Publication Number Publication Date
IT8022253A0 true IT8022253A0 (it) 1980-05-22
IT1130652B IT1130652B (it) 1986-06-18

Family

ID=25779335

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22253/80A IT1130652B (it) 1979-05-30 1980-05-22 Procedimento per produrre silicio con proprieta' di semiconduttore

Country Status (4)

Country Link
US (1) US4301323A (it)
FR (1) FR2457914A1 (it)
GB (1) GB2049643B (it)
IT (1) IT1130652B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
EP0031180A3 (en) * 1979-12-19 1983-07-20 Philips Electronics Uk Limited Method of growing a doped iii-v alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped iii-v alloy grown by such a method
GB2086135B (en) * 1980-09-30 1985-08-21 Nippon Telegraph & Telephone Electrode and semiconductor device provided with the electrode
US4582560A (en) * 1982-12-06 1986-04-15 Sri International In situ production of silicon crystals on substrate for use in solar cell construction
DE3906345A1 (de) * 1989-02-28 1990-08-30 Eckhard Dr Kaufmann Thermoelektrisches wandlerelement
JPH0452614A (ja) * 1990-06-20 1992-02-20 Olympus Optical Co Ltd 内視鏡
CN112410872A (zh) * 2020-11-18 2021-02-26 山东金韵能源技术有限公司 多晶硅材料及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409554A (en) * 1964-03-16 1968-11-05 Nasa Usa Gd or sm doped silicon semiconductor composition
US3390020A (en) * 1964-03-17 1968-06-25 Mandelkorn Joseph Semiconductor material and method of making same
DE2014903B2 (de) * 1969-03-28 1973-06-28 Transistor mit niedriger rauschzahl und verfahren zu seiner herstellung
DE2019251A1 (de) * 1970-04-21 1971-11-04 Siemens Ag Verfahren zum Eindiffundieren oder Einlegieren eines Fremdstoffes in einen Halbleiterkoerper
US3836999A (en) * 1970-09-21 1974-09-17 Semiconductor Res Found Semiconductor with grown layer relieved in lattice strain
FR2189876A1 (en) * 1972-06-23 1974-01-25 Anvar Radiation resistant silicon wafers - and solar cells made therefrom for use in space
US3900597A (en) * 1973-12-19 1975-08-19 Motorola Inc System and process for deposition of polycrystalline silicon with silane in vacuum
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US4249957A (en) * 1979-05-30 1981-02-10 Taher Daud Copper doped polycrystalline silicon solar cell

Also Published As

Publication number Publication date
GB2049643B (en) 1983-07-20
FR2457914B1 (it) 1985-03-08
US4301323A (en) 1981-11-17
FR2457914A1 (fr) 1980-12-26
IT1130652B (it) 1986-06-18
GB2049643A (en) 1980-12-31

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