RU2584204C2 - Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм - Google Patents

Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм Download PDF

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Publication number
RU2584204C2
RU2584204C2 RU2013139216/05A RU2013139216A RU2584204C2 RU 2584204 C2 RU2584204 C2 RU 2584204C2 RU 2013139216/05 A RU2013139216/05 A RU 2013139216/05A RU 2013139216 A RU2013139216 A RU 2013139216A RU 2584204 C2 RU2584204 C2 RU 2584204C2
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RU
Russia
Prior art keywords
groups
group
atoms
layers
surfactants
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RU2013139216/05A
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English (en)
Russian (ru)
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RU2013139216A (ru
Inventor
Андреас КЛИПП
Дитер Майер
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Басф Се
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Publication of RU2013139216A publication Critical patent/RU2013139216A/ru
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
RU2013139216/05A 2011-01-25 2012-01-17 Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм RU2584204C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161435820P 2011-01-25 2011-01-25
US61/435,820 2011-01-25
PCT/IB2012/050218 WO2012101545A1 (en) 2011-01-25 2012-01-17 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Publications (2)

Publication Number Publication Date
RU2013139216A RU2013139216A (ru) 2015-03-10
RU2584204C2 true RU2584204C2 (ru) 2016-05-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2013139216/05A RU2584204C2 (ru) 2011-01-25 2012-01-17 Применение поверхностно-активных веществ, содержащих по меньшей мере три короткоцепочечные перфторированные группы, для производства микросхем, имеющих рисунки с расстояниями между линиями менее 50 нм

Country Status (10)

Country Link
US (1) US9236256B2 (enExample)
EP (1) EP2668248B1 (enExample)
JP (1) JP6118732B2 (enExample)
KR (1) KR102004148B1 (enExample)
CN (1) CN103328610B (enExample)
IL (1) IL227075A (enExample)
MY (1) MY161218A (enExample)
RU (1) RU2584204C2 (enExample)
SG (1) SG191738A1 (enExample)
WO (1) WO2012101545A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
RU2585322C2 (ru) 2011-03-18 2016-05-27 Басф Се Способ получения интегральных схем, оптических устройств, микромашин и механических высокоточных устройств, имеющих слои структурированного материала со строчным интервалом 50 нм и менее
EP3299891B1 (en) 2012-07-10 2019-05-15 Basf Se Use of compositions comprising gemini additives for treating semiconductor substrates
RU2015128132A (ru) 2012-12-14 2017-01-18 Басф Се Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее
WO2014095036A1 (de) 2012-12-21 2014-06-26 Merck Patent Gmbh Fluortenside
EP2824511A1 (en) 2013-07-11 2015-01-14 Basf Se The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
US9126889B2 (en) 2013-09-04 2015-09-08 Honeywell International Inc. Fluorosurfactants having improved biodegradability
KR102628568B1 (ko) 2015-07-16 2024-01-23 바스프 에스이 설포에스테르의 암모늄 염을 함유하는 결함 감소 헹굼 용액
CN111386332B (zh) * 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
WO2019224032A1 (en) * 2018-05-25 2019-11-28 Basf Se Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
CN113574460A (zh) * 2019-04-16 2021-10-29 巴斯夫欧洲公司 用于在处理具有50nm或更小的线距尺寸的图案化材料时避免图案塌陷的包含硼型添加剂的组合物
JPWO2023002869A1 (enExample) * 2021-07-21 2023-01-26
CN116120998B (zh) * 2023-04-17 2023-06-16 甘肃华隆芯材料科技有限公司 一种冲洗组合物及其光刻胶图案形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU396664A1 (ru) * 1971-01-25 1973-08-29 Органический проявитель для позитивных фоторезистов
RU2194295C2 (ru) * 1996-03-07 2002-12-10 З Би. Эф. Гудрич Кампэни Фоторезистная композиция и полимер
WO2004044092A1 (en) * 2002-11-08 2004-05-27 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions

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US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP3835521B2 (ja) 2000-11-14 2006-10-18 信越化学工業株式会社 レジスト表面処理剤組成物
JP3553904B2 (ja) * 2001-04-11 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
US20050158672A1 (en) * 2003-12-22 2005-07-21 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US7063931B2 (en) * 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
DE102006031149A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006031262A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006031151A1 (de) 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006032391A1 (de) * 2006-07-04 2008-01-17 Merck Patent Gmbh Fluortenside
WO2008014980A1 (en) 2006-08-02 2008-02-07 The Furukawa Electric Co., Ltd. Thermite welding lug
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
DE102008027930A1 (de) 2008-06-12 2009-12-17 Merck Patent Gmbh Fluortenside
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
SU396664A1 (ru) * 1971-01-25 1973-08-29 Органический проявитель для позитивных фоторезистов
RU2194295C2 (ru) * 1996-03-07 2002-12-10 З Би. Эф. Гудрич Кампэни Фоторезистная композиция и полимер
WO2004044092A1 (en) * 2002-11-08 2004-05-27 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions

Also Published As

Publication number Publication date
KR20140004145A (ko) 2014-01-10
IL227075A (en) 2016-07-31
WO2012101545A1 (en) 2012-08-02
CN103328610A (zh) 2013-09-25
SG191738A1 (en) 2013-08-30
JP2014508318A (ja) 2014-04-03
EP2668248A1 (en) 2013-12-04
RU2013139216A (ru) 2015-03-10
KR102004148B1 (ko) 2019-07-26
JP6118732B2 (ja) 2017-04-19
US20130288484A1 (en) 2013-10-31
EP2668248A4 (en) 2017-09-13
MY161218A (en) 2017-04-14
CN103328610B (zh) 2016-08-10
EP2668248B1 (en) 2019-02-27
US9236256B2 (en) 2016-01-12

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Effective date: 20170118