IL227075A - Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm - Google Patents

Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Info

Publication number
IL227075A
IL227075A IL227075A IL22707513A IL227075A IL 227075 A IL227075 A IL 227075A IL 227075 A IL227075 A IL 227075A IL 22707513 A IL22707513 A IL 22707513A IL 227075 A IL227075 A IL 227075A
Authority
IL
Israel
Prior art keywords
groups
group
atoms
surfactant
patterned
Prior art date
Application number
IL227075A
Other languages
English (en)
Hebrew (he)
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL227075A publication Critical patent/IL227075A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
IL227075A 2011-01-25 2013-06-20 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm IL227075A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161435820P 2011-01-25 2011-01-25
PCT/IB2012/050218 WO2012101545A1 (en) 2011-01-25 2012-01-17 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Publications (1)

Publication Number Publication Date
IL227075A true IL227075A (en) 2016-07-31

Family

ID=46580262

Family Applications (1)

Application Number Title Priority Date Filing Date
IL227075A IL227075A (en) 2011-01-25 2013-06-20 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Country Status (10)

Country Link
US (1) US9236256B2 (enExample)
EP (1) EP2668248B1 (enExample)
JP (1) JP6118732B2 (enExample)
KR (1) KR102004148B1 (enExample)
CN (1) CN103328610B (enExample)
IL (1) IL227075A (enExample)
MY (1) MY161218A (enExample)
RU (1) RU2584204C2 (enExample)
SG (1) SG191738A1 (enExample)
WO (1) WO2012101545A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM
CN103430102B (zh) 2011-03-18 2017-02-08 巴斯夫欧洲公司 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法
US10385295B2 (en) 2012-07-10 2019-08-20 Basf Se Compositions for anti pattern collapse treatment comprising gemini additives
JP6246830B2 (ja) * 2012-12-14 2017-12-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理する際におけるアンチパターン崩壊を回避するための、界面活性剤及び疎水剤を含む組成物の使用
WO2014095036A1 (de) 2012-12-21 2014-06-26 Merck Patent Gmbh Fluortenside
EP2824511A1 (en) * 2013-07-11 2015-01-14 Basf Se The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
US9126889B2 (en) 2013-09-04 2015-09-08 Honeywell International Inc. Fluorosurfactants having improved biodegradability
WO2017009068A1 (en) 2015-07-16 2017-01-19 Basf Se Defect reduction rinse solution containing ammonium salts of sulfoesters
US12084628B2 (en) 2017-11-28 2024-09-10 Basf Se Composition comprising a primary and a secondary surfactant, for cleaning or rinsing a product
CN112135899B (zh) * 2018-05-25 2022-10-25 巴斯夫欧洲公司 包含溶剂混合物的组合物用于处理图案化材料时避免图案坍塌的用途
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
CN113574460A (zh) * 2019-04-16 2021-10-29 巴斯夫欧洲公司 用于在处理具有50nm或更小的线距尺寸的图案化材料时避免图案塌陷的包含硼型添加剂的组合物
JPWO2023002869A1 (enExample) * 2021-07-21 2023-01-26
CN116120998B (zh) * 2023-04-17 2023-06-16 甘肃华隆芯材料科技有限公司 一种冲洗组合物及其光刻胶图案形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU396664A1 (ru) * 1971-01-25 1973-08-29 Органический проявитель для позитивных фоторезистов
DE69733469T2 (de) * 1996-03-07 2006-03-23 Sumitomo Bakelite Co. Ltd. Photoresist zusammensetzungen mit polycyclischen polymeren mit säurelabilen gruppen am ende
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP3835521B2 (ja) 2000-11-14 2006-10-18 信越化学工業株式会社 レジスト表面処理剤組成物
JP3553904B2 (ja) * 2001-04-11 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
US6890452B2 (en) 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
EP1553454A2 (en) * 2003-12-22 2005-07-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US7063931B2 (en) 2004-01-08 2006-06-20 International Business Machines Corporation Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US20080299487A1 (en) * 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
DE102006031262A1 (de) 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006031149A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006032391A1 (de) * 2006-07-04 2008-01-17 Merck Patent Gmbh Fluortenside
DE102006031151A1 (de) 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
JP5275987B2 (ja) 2006-08-02 2013-08-28 古河電気工業株式会社 テルミット溶接用端子
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
DE102008027930A1 (de) 2008-06-12 2009-12-17 Merck Patent Gmbh Fluortenside
US9236256B2 (en) 2011-01-25 2016-01-12 Basf Se Use of surfactants having at least three short-chain perfluorinated groups RF for manufacturing integrated circuits having patterns with line-space dimensions below 50 NM

Also Published As

Publication number Publication date
SG191738A1 (en) 2013-08-30
MY161218A (en) 2017-04-14
RU2584204C2 (ru) 2016-05-20
RU2013139216A (ru) 2015-03-10
KR102004148B1 (ko) 2019-07-26
KR20140004145A (ko) 2014-01-10
CN103328610B (zh) 2016-08-10
US20130288484A1 (en) 2013-10-31
CN103328610A (zh) 2013-09-25
EP2668248B1 (en) 2019-02-27
JP6118732B2 (ja) 2017-04-19
JP2014508318A (ja) 2014-04-03
EP2668248A1 (en) 2013-12-04
WO2012101545A1 (en) 2012-08-02
US9236256B2 (en) 2016-01-12
EP2668248A4 (en) 2017-09-13

Similar Documents

Publication Publication Date Title
EP2668248B1 (en) Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
KR101934687B1 (ko) 50 ㎚ 이하의 라인 스페이스 치수들을 갖는 패터닝된 재료 층들을 가진 집적 회로 디바이스들, 광학 디바이스들, 마이크로머신들 및 기계 정밀 디바이스들의 제조 방법
TWI521018B (zh) Poly Silicon alumoxane composition and pattern forming method
CN110955112B (zh) 光阻组成物及形成光阻图案的方法
US9891520B2 (en) Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
JP6324955B2 (ja) ジェミニ添加剤を含む抗パターン崩壊処理用組成物
CN120548507A (zh) 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法、及鎓盐
TWI506132B (zh) 具有至少三個短鏈全氟基Ｒｆ的界面活性劑於製造具有線－距尺度低於５０奈米之圖案的積體電路之用途
JP4611137B2 (ja) 保護膜形成用材料、およびこれを用いたホトレジストパターン形成方法
KR20150042796A (ko) 집적 회로 기기, 광학 기기, 초소형 기계 장비 및 정밀 기계 장비 제조용 조성물
KR20190078309A (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
EP2500777A1 (en) Method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices having patterned material layers with line-space dimensions of 50 nm and less
WO2024048282A1 (ja) 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
TW202442706A (zh) 溶液的製造方法、光阻組成物的製造方法、圖案形成方法及電子器件之製造方法
CN113359391A (zh) 光致抗蚀剂组合物和形成光致抗蚀剂图案的方法
JP2007078745A (ja) 保護膜形成用材料およびこれを用いたホトレジストパターン形成方法
JP2007078743A (ja) 保護膜形成用材料およびこれを用いたホトレジストパターン形成方法

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed