CN103328610B - 具有至少三个短链全氟化基团的表面活性剂在制造具有行间距尺寸为50nm以下的图案的集成电路中的用途 - Google Patents

具有至少三个短链全氟化基团的表面活性剂在制造具有行间距尺寸为50nm以下的图案的集成电路中的用途 Download PDF

Info

Publication number
CN103328610B
CN103328610B CN201280006322.6A CN201280006322A CN103328610B CN 103328610 B CN103328610 B CN 103328610B CN 201280006322 A CN201280006322 A CN 201280006322A CN 103328610 B CN103328610 B CN 103328610B
Authority
CN
China
Prior art keywords
group
surfactant
photoresist layer
purposes
heptafluoropropyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280006322.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN103328610A (zh
Inventor
A·克里普
D·梅尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of CN103328610A publication Critical patent/CN103328610A/zh
Application granted granted Critical
Publication of CN103328610B publication Critical patent/CN103328610B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
CN201280006322.6A 2011-01-25 2012-01-17 具有至少三个短链全氟化基团的表面活性剂在制造具有行间距尺寸为50nm以下的图案的集成电路中的用途 Active CN103328610B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161435820P 2011-01-25 2011-01-25
US61/435,820 2011-01-25
PCT/IB2012/050218 WO2012101545A1 (en) 2011-01-25 2012-01-17 Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Publications (2)

Publication Number Publication Date
CN103328610A CN103328610A (zh) 2013-09-25
CN103328610B true CN103328610B (zh) 2016-08-10

Family

ID=46580262

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280006322.6A Active CN103328610B (zh) 2011-01-25 2012-01-17 具有至少三个短链全氟化基团的表面活性剂在制造具有行间距尺寸为50nm以下的图案的集成电路中的用途

Country Status (10)

Country Link
US (1) US9236256B2 (enExample)
EP (1) EP2668248B1 (enExample)
JP (1) JP6118732B2 (enExample)
KR (1) KR102004148B1 (enExample)
CN (1) CN103328610B (enExample)
IL (1) IL227075A (enExample)
MY (1) MY161218A (enExample)
RU (1) RU2584204C2 (enExample)
SG (1) SG191738A1 (enExample)
WO (1) WO2012101545A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY161218A (en) 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
CN103430102B (zh) 2011-03-18 2017-02-08 巴斯夫欧洲公司 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法
CN104428716B (zh) 2012-07-10 2019-06-14 巴斯夫欧洲公司 用于抗图案崩坏处理的包含双子型添加剂的组合物
MY181266A (en) 2012-12-14 2020-12-21 Basf Se Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
WO2014095036A1 (de) 2012-12-21 2014-06-26 Merck Patent Gmbh Fluortenside
EP2824511A1 (en) 2013-07-11 2015-01-14 Basf Se The use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
US9126889B2 (en) 2013-09-04 2015-09-08 Honeywell International Inc. Fluorosurfactants having improved biodegradability
WO2017009068A1 (en) 2015-07-16 2017-01-19 Basf Se Defect reduction rinse solution containing ammonium salts of sulfoesters
CN111386332B (zh) * 2017-11-28 2025-05-23 巴斯夫欧洲公司 用于清洁或清洗产品的包含一级和二级表面活性剂的组合物
KR20210015801A (ko) * 2018-05-25 2021-02-10 바스프 에스이 50 nm 이하의 라인 간격 치수를 갖는 패턴화 재료를 처리할 때 패턴 붕괴를 피하기 위한 용매 혼합물을 포함하는 조성물의 용도
US11094527B2 (en) 2018-10-10 2021-08-17 International Business Machines Corporation Wet clean solutions to prevent pattern collapse
EP3956729A1 (en) * 2019-04-16 2022-02-23 Basf Se Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive
KR102878549B1 (ko) * 2021-07-21 2025-10-30 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지, 및 수지의 제조 방법
CN116120998B (zh) * 2023-04-17 2023-06-16 甘肃华隆芯材料科技有限公司 一种冲洗组合物及其光刻胶图案形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637603A (zh) * 2004-01-08 2005-07-13 国际商业机器公司 含有包括氟磺酰胺基团的聚合物的正型光刻胶组合物及其使用方法
CN1694940A (zh) * 2002-11-08 2005-11-09 3M创新有限公司 用于含水酸蚀刻溶液的氟化表面活性剂
WO2008003444A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
WO2008003446A2 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU396664A1 (ru) * 1971-01-25 1973-08-29 Органический проявитель для позитивных фоторезистов
WO1997033198A1 (en) * 1996-03-07 1997-09-12 The B.F. Goodrich Company Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP3835521B2 (ja) 2000-11-14 2006-10-18 信越化学工業株式会社 レジスト表面処理剤組成物
JP3553904B2 (ja) * 2001-04-11 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
EP1553454A2 (en) * 2003-12-22 2005-07-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
DE102006031151A1 (de) 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
DE102006031262A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
CN101505907A (zh) 2006-08-02 2009-08-12 古河电气工业株式会社 铝热焊焊片
US20080280230A1 (en) 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
DE102008027930A1 (de) 2008-06-12 2009-12-17 Merck Patent Gmbh Fluortenside
MY161218A (en) 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1694940A (zh) * 2002-11-08 2005-11-09 3M创新有限公司 用于含水酸蚀刻溶液的氟化表面活性剂
CN1637603A (zh) * 2004-01-08 2005-07-13 国际商业机器公司 含有包括氟磺酰胺基团的聚合物的正型光刻胶组合物及其使用方法
WO2008003444A1 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside
WO2008003446A2 (de) * 2006-07-04 2008-01-10 Merck Patent Gmbh Fluortenside

Also Published As

Publication number Publication date
KR20140004145A (ko) 2014-01-10
EP2668248B1 (en) 2019-02-27
JP6118732B2 (ja) 2017-04-19
IL227075A (en) 2016-07-31
KR102004148B1 (ko) 2019-07-26
MY161218A (en) 2017-04-14
US9236256B2 (en) 2016-01-12
CN103328610A (zh) 2013-09-25
RU2013139216A (ru) 2015-03-10
SG191738A1 (en) 2013-08-30
EP2668248A4 (en) 2017-09-13
WO2012101545A1 (en) 2012-08-02
RU2584204C2 (ru) 2016-05-20
EP2668248A1 (en) 2013-12-04
US20130288484A1 (en) 2013-10-31
JP2014508318A (ja) 2014-04-03

Similar Documents

Publication Publication Date Title
CN103328610B (zh) 具有至少三个短链全氟化基团的表面活性剂在制造具有行间距尺寸为50nm以下的图案的集成电路中的用途
CN115244464A (zh) 感光化射线性或感放射线性树脂组合物、图案形成方法、抗蚀剂膜及电子器件的制造方法
CN103430102B (zh) 制造具有带50nm及更小行间距尺寸的图案化材料层的集成电路装置、光学装置、微型电机和机械精密装置的方法
TWI521018B (zh) Poly Silicon alumoxane composition and pattern forming method
CN113168100A (zh) 感光化射线性或感辐射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法
US9891520B2 (en) Use of surfactants having at least three short-chain perfluorinated groups in formulations for photo mask cleaning
TWI611274B (zh) 用於抗圖案崩壞處理之包含雙子型添加劑之組成物
TWI506132B (zh) 具有至少三個短鏈全氟基Ｒｆ的界面活性劑於製造具有線－距尺度低於５０奈米之圖案的積體電路之用途
TW201841998A (zh) 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷
KR102107370B1 (ko) 집적 회로 기기, 광학 기기, 초소형 기계 장비 및 정밀 기계 장비 제조용 조성물
KR20250150614A (ko) 용액의 제조 방법, 레지스트 조성물의 제조 방법, 패턴 형성 방법 및 전자 디바이스의 제조 방법
TW202413457A (zh) 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法
WO2024048282A1 (ja) 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
TW201403221A (zh) 光阻組成物及光阻圖型之形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant