Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
  • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
  • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
  • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
  • G03F7/322—Aqueous alkaline compositions
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
  • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

• the present invention is directed to the novel use of surfactants having at least three short-chain perfluorinated groups Rf for manufacturing integrated circuits (ICs), in particular, ICs having large-scale integration (LSI), very-large-scale integration (VLSI) and ultra-large-scale integration (ULSI), the said ICs having high aspect ratio patterns with line-space dimensions below 50 nm.
• ICs integrated circuits
• LSI large-scale integration
• VLSI very-large-scale integration
• ULSI ultra-large-scale integration
• patterned material layers like patterned photoresist layers, patterned barrier material layers containing or consisting0 of titanium nitride, tantalum or tantalum nitride, patterned multi-stack material layers containing or consisting of stacks e.g. of alternating polysilicon and silicon dioxide layers, and patterned dielectric material layers containing or consisting of silicon dioxide or low-k or ultra-low-k dielectric materials are produced by photolithographic techniques.
• patterned material layers comprise structures of dimensions even below5 20 nm with high aspect ratios.
• Photolithography is a method in which a pattern on a mask is projected onto a substrate such as a semiconductor wafer.
• Semiconductor photolithography typically includes the step of applying a layer of a photoresist on a top surface of the semiconductor substrate0 and exposing the photoresist to actinic radiation, in particular UV radiation of a wavelength of, for example, 193 nm, through the mask.
• actinic radiation in particular UV radiation of a wavelength of, for example, 193 nm
• immersion photolithography has been developed as a resolution enhancement technique.
• the air gap between the final lens of the optical system and the photoresist surface is replaced by a liquid5 medium that has a refractive index greater than one, e.g., ultra pure water with a refractive index of 1.44 for the wavelength of 193 nm.
• a barrier coating or a water resistant photoresist must be used. These measures however add to the complexity of the manufacturing process and are therefore disadvantageous.
• a post-exposure bake (PEB) is often performed to allow the exposed photoresist polymers to cleave.
• the substrate including the cleaved polymer photoresist is then transferred to a developing chamber to remove the exposed photoresist, which is soluble in aqueous developer solutions.
• a developer solution such as a tetramethylammonium hydroxide (TMAH) is applied to the resist surface in the form of a puddle to develop the exposed photoresist.
• TMAH tetramethylammonium hydroxide
• a deionized water rinse is then applied to the substrate to remove the dissolved polymers of the photoresists.
• the substrate is then sent to a spin drying process. Thereafter, the substrate can be transferred to the next process step, which may include a hard bake process to remove any moisture from the photoresist surface.
• This conventional process however involves a plurality of problems.
• photoresist patterns are required to include relatively thin and tall structures or features of photoresists, i.e., features having a high aspect ratio, on the substrate. These structures may suffer from bending and/or collapsing, in particular, during the spin dry process, due to excessive capillary forces of the deionized water remaining from the chemical rinse and spin dry processes and being disposed between adjacent photoresist features.
• Another solution for immersion lithography may include using a photoresists with modified polymers to make it more hydrophobic. However, this solution may decrease the wettability of the developing solution.
• Another problem of the conventional photolithographic process is line edge roughness (LER) due to resist and optical resolution limits. LER includes horizontal and vertical deviations from the feature's ideal form. Especially as critical dimensions shrink, the LER becomes more problematic and may cause yield loss in the manufacturing process of IC devices. Due to the shrinkage of the dimensions, the removal of particles in order to achieve a defect reduction becomes also a critical factor. This does not only applied to photoresist patterns but also to other patterned material layers.
• Watermarks may form on the photoresist as the deionized water from the deionized water rinse cannot be spun off from the hydrophobic surface of the photoresist.
• the photoresist may be hydrophobic particularly in areas of isolated, or non- dense, patterning. The watermarks have a harmful effect on yield and I C device performance.
• the American patent application US 2008/0280230 A1 discloses a chemical rinse solution containing an alcohol, in particular, isobutyl alcohol.
• the chemical rinse solution may contain fluorosurfactants such as 3M NovecTM fluid HFE-71 1 PA, -7000, -7100, -7200, and 7500, 3M FluorinertTM FC-72, -84, -77, -3255, -3283, -40, -43, -70, -4432, 4430, and - 4434, or 3M NovecTM 4200 and 4300.
• fluorosurfactants such as 3M NovecTM fluid HFE-71 1 PA, -7000, -7100, -7200, and 7500, 3M FluorinertTM FC-72, -84, -77, -3255, -3283, -40, -43, -70, -4432, 4430, and - 4434, or 3M NovecTM 4200 and 4300.
• 3M NovecTM 4200 is a perfluoroalkyl sulfonamide
• 3M NovecTM 4300 is a perfluoroalkyl sulfonate
• HFE-7000 is heptafluoro-3-methoxypropane
• HFE-7100 is nonafluoro-4-methoxybutane
• HFE-7200 is 1 -ethoxy-nonafluorobutane
• HFE-7500 is 3- ethoxy-dodecafluoro-2-(trifluoromethyl)-hexane
• HFE-71 1 PA is an azeotrope of 1 - methoxy-nonafluorobutane and isopropanol.
• the 3M FluorinertTM series surfactants are customarily used as inert perfluorinated heat transfer media.
• fluorosurfactants find numerous applications, for example, in textile, paper, glass, building, coating, cleaner, cosmetic, herbicide, pesticide, fungicide, adhesive, metal, or mineral oil technologies as well as in special coatings for semiconductor photolithography (photoresist, top antireflective coatings, bottom antireflective coatings) [cf., for example WO 2008/003446 A2, page 14, line 29 to page 20, line 20].
• WO 2008/003446 A2 page 14, line 29 to page 20, line 20.
• the novel use of the said fluorosurfactants should allow for the immersion photolithography of photoresist layers, the developing of photoresist layers exposed to actinic radiation through a mask and/or the chemical rinse of patterned material layers comprising patterns with a high aspect ratio and dimensions of 50 nm and less, in particular 32 nm and less, without causing pattern collapse, line edge roughness (LER) and watermark defects.
• LER line edge roughness
• the novel use should allow for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles in order to achieve a significant defect reduction not only on photoresist patterns but also on other patterned material layers.
• the novel photographic process should allow for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles in order to achieve a significant defect reduction not only on photoresist patterns but also on other patterned material layers.
• surfactants A for manufacturing integrated circuits having patterns having line-space dimensions below 50 nm and aspect ratios >3 has been found, the 1 % by weight aqueous solutions of the said surfactants having a static surface tension ⁇ 25 mN/m and the said surfactants A containing at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1 -heptafluoropropyl, 2-heptafluoropropyl, heptafluoroisopropyl, and pentafluorosulfanyl.
• the immersion photoresist layer, the developer solution and/or the chemical rinse solution comprises or comprise at least one surfactant A, the 1 % by weight aqueous solution of which exhibits a static surface tension ⁇ 25 mN/m, the said surfactant A containing at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl groups.
• patterned developed photoresist layers comprising patterns having line-space dimensions below 50 nm, particularly 32 nm and less, and most particularly 20 nm and less, and aspect ratios >3 without causing pattern collapse, line edge roughness (LER) and watermark defects.
• the use of the invention allowed for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles whereby a significant defect reduction not only on photoresist patterns but also on other patterned material layers could be achieved.
• the process of the invention allowed for the immersion photolithography of photoresist layers, the development of the exposed photoresist layers and the chemical rinse of patterned developed photoresist layers comprising patterns having line-space dimensions below 50 nm, particularly 32 nm and less, and most particularly 20 nm and less, and aspect ratios >3 without causing pattern collapse, line edge roughness (LER) and watermark defects.
• LER line edge roughness
• the process of the invention allowed for a significant reduction of LER by smoothing the roughness of the surfaces of the developed photoresist patterns caused by interference effects, for the efficient prevention and/or the removal of watermark defects not only on photoresist patterns but also on other patterned material layers, and the efficient removal of particles whereby a significant defect reduction not only on photoresist patterns but also on other patterned material layers could be achieved.
• surfactants A used in accordance with the use of the invention and in the process of the invention were biodegradable and showed no bioaccumulation.
• the present invention is directed to the use of the especially selected surfactants A in manufacturing ICs, in particular ICs with LSI, VLSI and/or ULSI, comprising patterns having line-space dimensions below 50 nm and aspect ratios >3.
• the surfactants A are used as additives in immersion photoresists in order to increase the resist layers' resistance to the immersion liquids and to water contained in the developer solutions or the chemical rinse solutions, preferably as additives in the chemical rinse solutions.
• the developer solutions are used for developing photoresist layers exposed to actinic radiation through a mask.
• UV irradiation of a wavelength of 193 nm is used.
• the chemical rinse solutions are used for rinsing patterned material layers comprising patterns having line-space dimensions below 50 nm and aspect ratios >3.
• the chemical rinse solutions are used for rinsing patterns having line- space dimensions of 32 nm and lower and, even more preferably, line-space dimensions of 20 nm and lower, i.e. patterns for the sub-20 nm technology nodes. More preferably, the chemical rinse solutions are used for rinsing patterns having aspect ratios >10, even more preferably >50. Most preferably, the aspect ratio is in the range of up to 75, as for example, for 15 nm flash devices.
• the patterned material layers can be patterned photoresist layers, patterned barrier material layers containing or consisting of titanium nitride, tantalum or tantalum nitride, patterned multi-stack material layers containing or consisting of layers of at least two different materials selected from the group consisting of silicon, polysilicon, silicon dioxide, low-k and ultra-low-k materials, high-k materials, semiconductors other than silicon and polysilicon and metals; and patterned dielectric material layers containing or consisting of silicon dioxide or low-k or ultra-low-k dielectric materials.
• aqueous solutions of the surfactants A to be used according to the use of the invention exhibit a static surface tension ⁇ 25 mN/m and more preferably ⁇ 20 mN/m.
• the static surface tension can be measured as described, for example, in the American patent application US 2009/0264525 A1 , Example 10, Determination of the Surface Te n s i o n , pa g e 30 , p a ra graph [0302] only that the above-mentioned concentrations are used.
• the surfactants A contain at least three, preferably three short-chain perfluorinated groups Rf selected from the group consisting of trifl uoromethyl , pentafl uoroethyl , 1 - heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl, preferably pentafluoroethyl and 1 -heptafluoropropyl.
• the perfluorinated groups Rf are bonded to the same multi-valent, preferably four-valent central moiety B.
• the central moiety B can be a carbon atom, an alkyl group, preferably having 2-16 carbon atoms, a monocyclic or polycyclic cycloalkyi group, preferably having 5-12 carbon atoms, and mononuclear or polynuclear aryl group, preferably having 6-18 carbon atoms.
• the cycloalkyi groups B and the aryl groups B may contain at least one heteroatom selected from the group consisting of oxygen, sulfur, nitrogen and phosphorus. However, it is preferred that such groups B contain only one or no heteroatom so that the hydrophobicity of the central moiety B is not affected.
• the alkyl groups and the cycloalkyi groups B may contain at least one multiple bond selected from double bonds and triple bonds.
• the number of double bonds and/or triple bonds is chosen such that the central moiety B does not become too reactive so that undesired reactions like decomposition, thermally initiated polymerization, polymerization initiated by actinic radiation, reaction with immersion liquids with photoresists and/or other components of the developer solutions and the chemical rinse solutions are avoided.
• the perfluorinated groups Rf are bonded to the same carbon atom of an alkyl group B.
• Suitable alkyl groups B are derived from ethane, propane, isopropane, butane, 2-methyl propane, pentane, isopentane, neopentane, hexane, 2- and 3-methyl hexane, heptane, octane, isooctane, nonane, decane, undecane, dodecane tridecane, tetradecane, pentadecane, and hexadecane.
• the perfluorinated groups Rf are bonded to the same ring of the polynuclear cycloalkyl and aryl groups B.
• Suitable cycloalkyl groups B are derived from cyclopentane, cyclohexane, cyclopentyl cyclohexane, cyclohexyl cyclohexane, spiro[3.4]octane, spiro[4.4]nonane, spiro[5.4]decane, spirobicyclohexane, norbonane, biyclo[3.2.1]octane, and adamantane.
• Suitable aryl groups are derived from benzene, biphenyl, o-, m- and p-terphenyl, naphthalene, anthracene, phenanthrene, and fluoranthene.
• the central moiety B most preferably used is a carbon atom and a benzene ring.
• the perfluorinated groups Rf are bonded to the multi-valent central moiety B via a linker X selected from the group consisting of covalent bonds, silicon atoms, nitrogen atoms, phosphorus atoms, oxygen atoms, sulfur atoms and bivalent organic linking groups L.
• the bivalent organic linking groups L are selected from the group consisting of short-chain linear alkylene groups, preferably having 1 -4 carbon atoms, e.g., methylene, ethylene, trimethylene, and butanel ,4- diyl; -C(O)-, -C(S)-, -C(0)-0-, -0-C(0)-0-,
• bivalent organic linking groups L are chosen such that they do not affect the hydrophobicity of the hydrophobic group D hereinafter described.
• the linker X is selected from the group consisting of covalent bonds and nitrogen atoms.
• the perfluorinated groups Rf, the linkers X and the central moiety B constitute the hydrophobic group D of the general formula I: wherein the index n is an integer of at least 3, preferably 3.
• suitable hydrophobic groups D of the general formula I are
• (CF 3 -) 3 C-, ( C 2 F 5 -) 3 C-, and (CF 3 CF 2 CF 2 -) 3 C- and most particularly preferably (CF 3 CF 2 CF 2 -) 3 C- is or are used as the hydrophobic group D.
• the surfactant A at least one, preferably one hydrophobic group D is bonded to at least one hydrophilic group E.
• the hydrophilic group E is selected from the group consisting of anionic groups, cationic groups and nonionic groups.
• the anionic groups E are selected from the group consisting of carboxylic acid groups, sulfonic acid groups, sulfuric acid groups, phosphonic acid groups, phosphoric acid groups, carboxylate groups, sulfonate groups, substituted sulfonimide and sulfonamide groups, sulfate groups, phosphonate groups, and phosphate groups, preferably sulfonate groups and negatively charged substituted sulfonimide and sulfonamide groups.
• the counterions are selected from the group consisting of ammonium, pri mary ammonium , secondary am monium , tertiary ammoni um and quaternary ammonium groups and lithium, sodium and potassium cations, in particular sodium cations.
• the cationic groups E are selected from the group consisting of primary, secondary, tertiary and quaternary ammonium groups, quaternary phosphonium groups and tertiary sulfonium groups.
• the counterions are selected from anions derived from volatile organic and inorganic acids, preferably formic acid, acetic acid and HCI.
• the hydrophilic group E consists only of the anionic or cationic groups E the said groups are directly bonded to the central moiety B described above, i.e., the linker Y is a covalent bond.
• the nonionic groups E are selected from the group consisting of hydroxy groups, groups having at least one hydroxy group and cyclic, linear and branched ether groups.
• the hydrophilic group E consists only of the hydroxy group the said group is directly bonded to the central moiety B described above, i.e, the linker Y is a covalent bond.
• the groups E having at least one hydroxy group are derived from polyhydroxy compounds selected from the group consisting, ethylene glycol, propylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, tripropylene glycol, ethylene propylene glycol, diethylene propylene glycol, ethylene dipropylene glycol, glycerol, 1 ,2,3-trihydroxy-n-butane, trimethylolpropane, erythritol, threitol pentaerythritol, di-, tri-, tetra-, penta-, hexa-, hepta-, octa-, nona-, deca-, undeca- and dodecaglycerol, - trimethylolpropane, -erythritol, -threitol and -pentaerythritol; arabinitol, ribitol and xylitol,
• the cyclic ether groups E are derived from cyclic ethers selected from the group consisting of tetrahydrofurane, tetrahydropyrane, and 1 ,4-dioxane.
• the linear and branched ether groups E are derived from polyethers selected from the group consisting of diethylene glycol, triethylene glycol, dipropylene glycol, tripropylene glycol, polyethyleneoxide preferably having a degree of polymerization of 4-100, and ethoxylated polyhydroxy compounds, in particular the polyhydroxy compounds described above.
• the hydrophilic groups E may be combined in any suitable manner.
• the hydrophilic groups E may contain anionic and cationic groups so that amphoteric or zwitterionic hydrophilic groups E result of .
• the nonionic groups E may be combined with any one of the cationic and/or the anionic groups E.
• the hydrophobic group D is bonded to the hydrophilic group E via a linker Y, thus constituting the surfactant A of the general formula II: wherein the index m is an integer of at least 1 .
• the linker Y is selected from the group consisting of covalent bonds, silicon atoms, nitrogen atoms, phosphorus atoms, oxygen atoms, sulfur atoms and the above described bivalent linking groups L.
• Suitable surfactants A which can be used in accordance with the use of the invention and methods for their preparation are described, for example, in the international patent applications - WO 2008/003443 A1 , page 3, line 1 to page 14, line 12 in conjunction with page 90, line 1 1 to page 144, line 28;
• WO 2008/003445 A1 page 3, line 20 to page 40, line 1 1 in conjunction with page 49, line 1 to page 62, line 28;
• WO 2008/003446 A1 page 3, line 21 to page 14, line 28 in conjunction with page 22, line 1 1 to page 88, line 2;
• the surfactants A particularly well-suited for the process of the invention.
• the process of the invention comprises the steps of (1 ) providing a substrate having an immersion photoresist layer;
• the substrate is a semiconductor substrate, more preferably a silicon wafer including a silicon-gallium wafer, which wafers are customarily used for manufacturing IC devices, in particular IC devices with LSI, VLSI and ULSI.
• Any customary and known immersion photoresist can be used.
• the immersion photoresist may already contain at least one surfactant A.
• the immersion photoresists can contain additional surfactants. Suitable additional surfactants are described, for example, in the American patent application US 2008/0299487 A1 , page 6, paragraphs [0078] and [0079].
• the immersion photoresist is a positive resist.
• UV radiation of the wavelength of 193 nm is used as actinic radiation.
• ultra-pure water is used as the immersion liquid.
• aqueous developer solutions containing tetramethylammonium hydroxide (TMAH) are used. More preferably, the aqueous developer solutions contain at least one surfactant A.
• the chemical rinse solutions are aqueous solutions. More preferably, the aqueous developer solutions contain at least one surfactant A.
• the chemical rinse solutions are applied to the exposed and developed photoresist layers as puddles. It is essential for the process of the invention, that at least one of immersion photoresist, developer solution or chemical rinse solution contains at least one surfactant A. Most preferably, the at least one surfactant A is contained in the chemical rinse solution.
• Customary and known equipment customarily used in the semiconductor industry can be used for carrying out the process of the invention.
• the static surface tension was measured measured as described in the American patent application US 2009/0264525 A1 , Example 10, Determination of the Surface Tension, page 30, paragraph [0302].
• the critical micellization concentration (CMC) is 0.4% by weight.
• An aqueous solution containing tris(heptafluoroprop-1 -yl)methane homologue sulfonic acid sodium salt in a concentration of only 0.01 % by weight had a static surface tension of 17.5.
• the CMC was 0.25% by weight.
• Both surfactants A caused very fast reduction of the surface tension in the dynamic surface tension test in a bubble tensiometer at concentrations of 0.1 % by weight.
• Silicon wafers were provided with 1000 nm thick layers of an immersion photoresist.
• the photoresist layers were exposed to UV radiation of a wavelength of 193 through a mask using ultrapure water as the immersion liquid.
• the mask contained features having dimensions of 20 nm. Thereafter, the exposed photoresist layers were baked and developed with an aqueous developer solution containing TMAH.
• the baked and developed photoresist layers were subjected to a chemical rinse treatment using chemical rinse solutions containing either 0.02% by weight of the homologues of tris(pentafluoroethyl)methane sulfonic acid sodium salt or 0.01 % by weight of the homologue tris(heptafluoroprop-1 -yl)methane sulfonic acid sodium salt.
• the chemical rinse solutions were applied as puddles. Thereafter, the silicon wafers were spun dry. The dried silicon wafers did not show any watermarks. It could be corroborated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) that the dried patterned photoresist layers having features with line-space dimensions of 20 nm with an aspect ratio of 50 did not show any pattern collapse.

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• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
• Materials For Photolithography (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• Weting (AREA)
• Detergent Compositions (AREA)

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• 2012
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  • 2012-01-17 RU RU2013139216/05A patent/RU2584204C2/ru not_active IP Right Cessation
  • 2012-01-17 CN CN201280006322.6A patent/CN103328610B/zh active Active
  • 2012-01-17 SG SG2013046990A patent/SG191738A1/en unknown
  • 2012-01-17 KR KR1020137019478A patent/KR102004148B1/ko active Active
  • 2012-01-17 WO PCT/IB2012/050218 patent/WO2012101545A1/en not_active Ceased
  • 2012-01-17 JP JP2013549914A patent/JP6118732B2/ja not_active Expired - Fee Related
  • 2012-01-17 EP EP12739044.1A patent/EP2668248B1/en active Active
  • 2012-01-17 US US13/979,076 patent/US9236256B2/en active Active
• 2013
  • 2013-06-20 IL IL227075A patent/IL227075A/en active IP Right Grant

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