RU2005101613A - Композиция для удаления "отложений на стенках" - Google Patents

Композиция для удаления "отложений на стенках" Download PDF

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Publication number
RU2005101613A
RU2005101613A RU2005101613/28A RU2005101613A RU2005101613A RU 2005101613 A RU2005101613 A RU 2005101613A RU 2005101613/28 A RU2005101613/28 A RU 2005101613/28A RU 2005101613 A RU2005101613 A RU 2005101613A RU 2005101613 A RU2005101613 A RU 2005101613A
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RU
Russia
Prior art keywords
composition
removing residual
residual polymers
hbf
sif
Prior art date
Application number
RU2005101613/28A
Other languages
English (en)
Other versions
RU2313155C2 (ru
Inventor
МЕЛЛИС Раймунд (DE)
МЕЛЛИС Раймунд
БЕРНЕР Марк (DE)
БЕРНЕР Марк
АРНОЛЬД Луци (DE)
АРНОЛЬД Луция
БАРКО Андреа (DE)
БАРКО Андреа
РАЙН Рудольф (DE)
РАЙН Рудольф
Original Assignee
Мерк Патент ГмбХ (DE)
Мерк Патент Гмбх
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Мерк Патент ГмбХ (DE), Мерк Патент Гмбх filed Critical Мерк Патент ГмбХ (DE)
Publication of RU2005101613A publication Critical patent/RU2005101613A/ru
Application granted granted Critical
Publication of RU2313155C2 publication Critical patent/RU2313155C2/ru

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C11D2111/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Claims (8)

1. Композиция для производства полупроводников, включающая H2SiF6 и/или HBF4 в общем количестве 10-500 мг/кг, 12-17 мас.% H2SO4, 2-4 мас.% H2O2, необязательно в комбинации с добавками, в водном растворе.
2. Применение композиции, включающей H2SiF6 и/или HBF4 в качестве средства для удаления остаточного полимера в технологической операции при производстве полупроводников.
3. Применение по п.2 для удаления остаточных полимеров с Al или Al-содержащих токопроводящих дорожек.
4. Применение по п.2 для удаления остаточных полимеров после сухого травления на металлических токопроводящих дорожках и контактных отверстиях.
5. Применение композиции по п.1 для удаления остаточных полимеров с алюминия или медно/алюминиевых сплавов.
6. Применение композиции, включающей H2SiF6 и/или HBF4 в общем количестве 10-500 мг/кг, 12-17 мас.% H2SO4, 2-4 мас.% H2O2, необязательно в комбинации с добавками, в водном растворе, по одному или более из пп.2-5.
7. Применение по одному или более из пп.2-6 для удаления остаточных полимеров в технологической операции при производстве полупроводников с применением вращательной травильной машины или в устройстве резервуарного типа.
8. Способ удаления остаточных полимеров с Al или Al-содержащих токопроводящих дорожек, отличающийся тем, что остаточные полимеры удаляют, применяя композицию по п.1.
RU2005101613/28A 2002-06-22 2003-05-27 Композиция и способ удаления остаточных полимеров с алюминийсодержащих поверхностей RU2313155C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10227867A DE10227867A1 (de) 2002-06-22 2002-06-22 Zusammensetzung zum Entfernen von Sidewall-Residues
DE10227867.9 2002-06-22

Publications (2)

Publication Number Publication Date
RU2005101613A true RU2005101613A (ru) 2005-07-10
RU2313155C2 RU2313155C2 (ru) 2007-12-20

Family

ID=29719360

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2005101613/28A RU2313155C2 (ru) 2002-06-22 2003-05-27 Композиция и способ удаления остаточных полимеров с алюминийсодержащих поверхностей

Country Status (11)

Country Link
US (2) US7417016B2 (ru)
EP (1) EP1490899B1 (ru)
JP (1) JP4690725B2 (ru)
KR (1) KR101044525B1 (ru)
CN (1) CN100375250C (ru)
AU (1) AU2003242580A1 (ru)
DE (1) DE10227867A1 (ru)
IL (1) IL165879A (ru)
RU (1) RU2313155C2 (ru)
TW (1) TWI249087B (ru)
WO (1) WO2004001834A1 (ru)

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JP4839968B2 (ja) * 2006-06-08 2011-12-21 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
JP5017985B2 (ja) * 2006-09-25 2012-09-05 東ソー株式会社 レジスト除去用組成物及びレジストの除去方法
US8143206B2 (en) 2008-02-21 2012-03-27 S.C. Johnson & Son, Inc. Cleaning composition having high self-adhesion and providing residual benefits
US9410111B2 (en) 2008-02-21 2016-08-09 S.C. Johnson & Son, Inc. Cleaning composition that provides residual benefits
WO2013074330A1 (en) * 2011-11-14 2013-05-23 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Etching agent for type ii inas/galnsb superlattice epitaxial materials
US8658588B2 (en) 2012-01-09 2014-02-25 S.C. Johnson & Son, Inc. Self-adhesive high viscosity cleaning composition
CN106206289A (zh) * 2015-05-07 2016-12-07 北大方正集团有限公司 一种铝刻蚀方法及装置
TWI804224B (zh) 2016-08-12 2023-06-01 美商英培雅股份有限公司 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法
CN108672686A (zh) * 2018-04-19 2018-10-19 安徽相邦复合材料有限公司 一种清除熔模铸造砂型残留物清理液的制备方法
CN114999898B (zh) * 2022-08-03 2022-11-08 广州粤芯半导体技术有限公司 具有钝化膜的晶圆刻蚀后的清洗方法和半导体封装方法

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Also Published As

Publication number Publication date
EP1490899B1 (de) 2017-09-13
US20080280803A1 (en) 2008-11-13
CN1663032A (zh) 2005-08-31
DE10227867A1 (de) 2004-01-08
JP4690725B2 (ja) 2011-06-01
US7417016B2 (en) 2008-08-26
JP2005531139A (ja) 2005-10-13
TWI249087B (en) 2006-02-11
CN100375250C (zh) 2008-03-12
US7531492B2 (en) 2009-05-12
EP1490899A1 (de) 2004-12-29
IL165879A (en) 2010-11-30
AU2003242580A1 (en) 2004-01-06
KR20050023324A (ko) 2005-03-09
RU2313155C2 (ru) 2007-12-20
KR101044525B1 (ko) 2011-06-27
WO2004001834A1 (de) 2003-12-31
IL165879A0 (en) 2006-01-15
US20060086372A1 (en) 2006-04-27
TW200401960A (en) 2004-02-01

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20170528