CN1663032A - 用于清除侧壁残留物的组合物 - Google Patents
用于清除侧壁残留物的组合物 Download PDFInfo
- Publication number
- CN1663032A CN1663032A CN03814610XA CN03814610A CN1663032A CN 1663032 A CN1663032 A CN 1663032A CN 03814610X A CN03814610X A CN 03814610XA CN 03814610 A CN03814610 A CN 03814610A CN 1663032 A CN1663032 A CN 1663032A
- Authority
- CN
- China
- Prior art keywords
- composition
- residual polyalcohol
- sif
- weight
- purposes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 150000005846 sugar alcohols Polymers 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 239000004411 aluminium Substances 0.000 claims description 19
- 239000000654 additive Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 18
- 230000000996 additive effect Effects 0.000 claims description 17
- 239000002516 radical scavenger Substances 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229960002163 hydrogen peroxide Drugs 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- -1 fluoride hexafluorosilicic acid Chemical compound 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000013047 polymeric layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006298 dechlorination reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- RHFUXPCCELGMFC-UHFFFAOYSA-N n-(6-cyano-3-hydroxy-2,2-dimethyl-3,4-dihydrochromen-4-yl)-n-phenylmethoxyacetamide Chemical compound OC1C(C)(C)OC2=CC=C(C#N)C=C2C1N(C(=O)C)OCC1=CC=CC=C1 RHFUXPCCELGMFC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/963—Removing process residues from vertical substrate surfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Detergent Compositions (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10227867.9 | 2002-06-22 | ||
DE10227867A DE10227867A1 (de) | 2002-06-22 | 2002-06-22 | Zusammensetzung zum Entfernen von Sidewall-Residues |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1663032A true CN1663032A (zh) | 2005-08-31 |
CN100375250C CN100375250C (zh) | 2008-03-12 |
Family
ID=29719360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB03814610XA Expired - Fee Related CN100375250C (zh) | 2002-06-22 | 2003-05-27 | 用于清除侧壁残留物的组合物 |
Country Status (11)
Country | Link |
---|---|
US (2) | US7417016B2 (zh) |
EP (1) | EP1490899B1 (zh) |
JP (1) | JP4690725B2 (zh) |
KR (1) | KR101044525B1 (zh) |
CN (1) | CN100375250C (zh) |
AU (1) | AU2003242580A1 (zh) |
DE (1) | DE10227867A1 (zh) |
IL (1) | IL165879A (zh) |
RU (1) | RU2313155C2 (zh) |
TW (1) | TWI249087B (zh) |
WO (1) | WO2004001834A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206289A (zh) * | 2015-05-07 | 2016-12-07 | 北大方正集团有限公司 | 一种铝刻蚀方法及装置 |
CN108672686A (zh) * | 2018-04-19 | 2018-10-19 | 安徽相邦复合材料有限公司 | 一种清除熔模铸造砂型残留物清理液的制备方法 |
CN114999898A (zh) * | 2022-08-03 | 2022-09-02 | 广州粤芯半导体技术有限公司 | 具有钝化膜的晶圆刻蚀后的清洗方法和半导体封装方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10227867A1 (de) * | 2002-06-22 | 2004-01-08 | Merck Patent Gmbh | Zusammensetzung zum Entfernen von Sidewall-Residues |
JP4839968B2 (ja) * | 2006-06-08 | 2011-12-21 | 東ソー株式会社 | レジスト除去用組成物及びレジストの除去方法 |
JP5017985B2 (ja) * | 2006-09-25 | 2012-09-05 | 東ソー株式会社 | レジスト除去用組成物及びレジストの除去方法 |
US9410111B2 (en) | 2008-02-21 | 2016-08-09 | S.C. Johnson & Son, Inc. | Cleaning composition that provides residual benefits |
US8143206B2 (en) | 2008-02-21 | 2012-03-27 | S.C. Johnson & Son, Inc. | Cleaning composition having high self-adhesion and providing residual benefits |
US8685273B2 (en) | 2011-11-14 | 2014-04-01 | The United States Of America, As Represented By The Secretary Of The Navy | Etching agent for type II InAs/GaInSb superlattice epitaxial materials |
US8658588B2 (en) | 2012-01-09 | 2014-02-25 | S.C. Johnson & Son, Inc. | Self-adhesive high viscosity cleaning composition |
JP7065076B2 (ja) | 2016-08-12 | 2022-05-11 | インプリア・コーポレイション | 金属含有レジストからのエッジビード領域における金属残留物を低減する方法 |
CN112670163A (zh) * | 2020-12-24 | 2021-04-16 | 中国电子科技集团公司第四十七研究所 | 一种载带自动焊载体去胶方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4502925A (en) * | 1984-06-11 | 1985-03-05 | American Hoechst Corporation | Process for aluminum surface preparation |
JP2787788B2 (ja) * | 1990-09-26 | 1998-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 残留物除去方法 |
US5486266A (en) * | 1994-09-01 | 1996-01-23 | Taiwan Semiconductor Manuf. Company | Method for improving the adhesion of a deposited metal layer |
DE69729553T2 (de) * | 1996-03-22 | 2005-08-18 | Merck Patent Gmbh | Lösungen und verfahren zur entfernung der seitlichen ablagerungen nach einem trocknätzschritt |
US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
US6273959B1 (en) * | 1996-07-08 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of cleaning semiconductor device |
JPH10125462A (ja) | 1996-10-17 | 1998-05-15 | Matsushita Electric Ind Co Ltd | 分散型エレクトロルミネセンス素子およびそれを用いた照光式スイッチユニット |
US6043206A (en) * | 1996-10-19 | 2000-03-28 | Samsung Electronics Co., Ltd. | Solutions for cleaning integrated circuit substrates |
KR100190102B1 (ko) * | 1996-10-19 | 1999-06-01 | 윤종용 | 세정 용액 및 이를 이용한 세정방법 |
US6383723B1 (en) * | 1998-08-28 | 2002-05-07 | Micron Technology, Inc. | Method to clean substrate and improve photoresist profile |
KR100319881B1 (ko) * | 1999-02-03 | 2002-01-10 | 윤종용 | 집적 회로 기판 표면의 불순물을 제거하기 위한 세정 수용액 및 이를 이용한 세정 방법 |
US6569537B1 (en) * | 1999-04-28 | 2003-05-27 | Suzuki Motor Corporation | Surface treatment method sliding member and piston |
JP2001144044A (ja) | 1999-11-11 | 2001-05-25 | Hitachi Chem Co Ltd | 金属用研磨液及びそれを用いた研磨方法 |
US6656852B2 (en) * | 2001-12-06 | 2003-12-02 | Texas Instruments Incorporated | Method for the selective removal of high-k dielectrics |
US6773959B2 (en) * | 2002-03-01 | 2004-08-10 | Sampson Taiwan Ltd. | Method for stacking semiconductor package units and stacked package |
DE10227867A1 (de) * | 2002-06-22 | 2004-01-08 | Merck Patent Gmbh | Zusammensetzung zum Entfernen von Sidewall-Residues |
US6953533B2 (en) * | 2003-06-16 | 2005-10-11 | General Electric Company | Process for removing chromide coatings from metal substrates, and related compositions |
-
2002
- 2002-06-22 DE DE10227867A patent/DE10227867A1/de not_active Withdrawn
-
2003
- 2003-05-27 KR KR1020047020845A patent/KR101044525B1/ko active IP Right Grant
- 2003-05-27 RU RU2005101613/28A patent/RU2313155C2/ru not_active IP Right Cessation
- 2003-05-27 WO PCT/EP2003/005549 patent/WO2004001834A1/de active Application Filing
- 2003-05-27 AU AU2003242580A patent/AU2003242580A1/en not_active Abandoned
- 2003-05-27 JP JP2004514652A patent/JP4690725B2/ja not_active Expired - Fee Related
- 2003-05-27 CN CNB03814610XA patent/CN100375250C/zh not_active Expired - Fee Related
- 2003-05-27 US US10/518,463 patent/US7417016B2/en not_active Expired - Lifetime
- 2003-05-27 EP EP03760590.4A patent/EP1490899B1/de not_active Expired - Lifetime
- 2003-06-16 TW TW092116289A patent/TWI249087B/zh not_active IP Right Cessation
-
2004
- 2004-12-20 IL IL165879A patent/IL165879A/en active IP Right Grant
-
2008
- 2008-06-05 US US12/133,532 patent/US7531492B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206289A (zh) * | 2015-05-07 | 2016-12-07 | 北大方正集团有限公司 | 一种铝刻蚀方法及装置 |
CN108672686A (zh) * | 2018-04-19 | 2018-10-19 | 安徽相邦复合材料有限公司 | 一种清除熔模铸造砂型残留物清理液的制备方法 |
CN114999898A (zh) * | 2022-08-03 | 2022-09-02 | 广州粤芯半导体技术有限公司 | 具有钝化膜的晶圆刻蚀后的清洗方法和半导体封装方法 |
CN114999898B (zh) * | 2022-08-03 | 2022-11-08 | 广州粤芯半导体技术有限公司 | 具有钝化膜的晶圆刻蚀后的清洗方法和半导体封装方法 |
Also Published As
Publication number | Publication date |
---|---|
US20080280803A1 (en) | 2008-11-13 |
US7417016B2 (en) | 2008-08-26 |
WO2004001834A1 (de) | 2003-12-31 |
JP2005531139A (ja) | 2005-10-13 |
RU2313155C2 (ru) | 2007-12-20 |
DE10227867A1 (de) | 2004-01-08 |
IL165879A0 (en) | 2006-01-15 |
EP1490899B1 (de) | 2017-09-13 |
TWI249087B (en) | 2006-02-11 |
IL165879A (en) | 2010-11-30 |
JP4690725B2 (ja) | 2011-06-01 |
RU2005101613A (ru) | 2005-07-10 |
CN100375250C (zh) | 2008-03-12 |
TW200401960A (en) | 2004-02-01 |
US7531492B2 (en) | 2009-05-12 |
KR20050023324A (ko) | 2005-03-09 |
US20060086372A1 (en) | 2006-04-27 |
KR101044525B1 (ko) | 2011-06-27 |
AU2003242580A1 (en) | 2004-01-06 |
EP1490899A1 (de) | 2004-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7531492B2 (en) | Composition for the removal of sidewall residues | |
KR100685738B1 (ko) | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 | |
KR101540001B1 (ko) | 포토레지스트 찌꺼기 및 폴리머 찌꺼기 제거액 조성물 | |
CN1139970C (zh) | 光刻胶残渣去除剂 | |
CN101065837A (zh) | 用于去除蚀刻后残留物的水溶液 | |
CN1920671A (zh) | 光致抗蚀剂残渣、聚合物残渣除去组合物和残渣除去方法 | |
CN1447754A (zh) | 用于清洁半导体设备上有机残余物和等离子蚀刻残余物的组合物 | |
CN1161825C (zh) | 清洗电子元件的方法 | |
CN100571900C (zh) | 一种阳极氧化零件表面的清洗方法 | |
US6589882B2 (en) | Copper post-etch cleaning process | |
CN101214485A (zh) | 一种多晶硅刻蚀腔室中阳极氧化零件表面的清洗方法 | |
KR100514167B1 (ko) | 세정액 및 이를 사용한 세라믹 부품의 세정 방법 | |
CN103545163A (zh) | 具有氟残留或氯残留的半导体结构的处理方法 | |
CN101126053A (zh) | 用于半导体工业中等离子刻蚀残留物的清洗液组合物 | |
JPWO2019167970A1 (ja) | アルミナのダメージを抑制した組成物及びこれを用いた半導体基板の製造方法 | |
KR100664403B1 (ko) | 에칭 잔류물 세정용 조성물 및 이를 이용한 세정방법 | |
CN1645259A (zh) | 抗蚀剂残渣去除液组合物及半导体电路元件的制造方法 | |
JP3759789B2 (ja) | 半導体装置の洗浄に使用される洗浄液及びこれを用いた洗浄方法 | |
KR101416103B1 (ko) | 불순물 제거용 세정액 및 이를 이용한 불순물 제거방법 | |
CN103773626A (zh) | 一种低蚀刻的去除光阻蚀刻残留物的清洗液 | |
CN102513313B (zh) | 具有碳化硅包覆层的喷淋头的污染物处理方法 | |
Votta et al. | AlCu Pitting Prevention in Post Etch Cleaning | |
KR20110020474A (ko) | 절연물질 제거용 조성물, 이를 이용한 기판 세정 및 재생방법 | |
JP2001207277A (ja) | 表面処理方法及びその装置 | |
CN109971565A (zh) | 一种含氟清洗液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: BASF CO., LTD. Free format text: FORMER OWNER: MERCK PATENT GMBH Effective date: 20050805 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20050805 Address after: Ludwigshafen, Germany Applicant after: BASF company Limited by Share Ltd Address before: Darmstadt Applicant before: Merck Patent GmbH |
|
ASS | Succession or assignment of patent right |
Owner name: BASF AKTIENGESELLCHAFT Free format text: FORMER OWNER: MERCK PATENT GMBH Effective date: 20050902 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20050902 Address after: Ludwigshafen, Germany Applicant after: Basf AG Address before: Darmstadt Applicant before: Merck Patent GmbH |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080312 Termination date: 20210527 |