PL194893B1 - Sposób formowania optycznej ograniczającej struktury - Google Patents

Sposób formowania optycznej ograniczającej struktury

Info

Publication number
PL194893B1
PL194893B1 PL327667A PL32766797A PL194893B1 PL 194893 B1 PL194893 B1 PL 194893B1 PL 327667 A PL327667 A PL 327667A PL 32766797 A PL32766797 A PL 32766797A PL 194893 B1 PL194893 B1 PL 194893B1
Authority
PL
Poland
Prior art keywords
substrate
protective coating
etching
ion beam
aswidrs
Prior art date
Application number
PL327667A
Other languages
English (en)
Polish (pl)
Other versions
PL327667A1 (en
Inventor
David Thomas Dutton
Anthony Brian Dean
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of PL327667A1 publication Critical patent/PL327667A1/xx
Publication of PL194893B1 publication Critical patent/PL194893B1/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001Phase modulating patterns, e.g. refractive index patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0041Photosensitive materials providing an etching agent upon exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/73Etching of wafers, substrates or parts of devices using masks for insulating materials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • G02B3/0018Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Saccharide Compounds (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
PL327667A 1996-01-10 1997-01-09 Sposób formowania optycznej ograniczającej struktury PL194893B1 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9600469.2A GB9600469D0 (en) 1996-01-10 1996-01-10 Three dimensional etching process
PCT/GB1997/000043 WO1997025653A1 (en) 1996-01-10 1997-01-09 Three-dimensional etching process

Publications (2)

Publication Number Publication Date
PL327667A1 PL327667A1 (en) 1998-12-21
PL194893B1 true PL194893B1 (pl) 2007-07-31

Family

ID=10786847

Family Applications (1)

Application Number Title Priority Date Filing Date
PL327667A PL194893B1 (pl) 1996-01-10 1997-01-09 Sposób formowania optycznej ograniczającej struktury

Country Status (12)

Country Link
US (1) US6682657B2 (enExample)
EP (1) EP0873542B1 (enExample)
JP (1) JP3965213B2 (enExample)
KR (1) KR19990077120A (enExample)
CN (1) CN1135438C (enExample)
AT (1) ATE507496T1 (enExample)
AU (1) AU1388497A (enExample)
CA (1) CA2242634C (enExample)
DE (1) DE69740180D1 (enExample)
GB (2) GB9600469D0 (enExample)
PL (1) PL194893B1 (enExample)
WO (1) WO1997025653A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110824590A (zh) * 2019-11-25 2020-02-21 京东方科技集团股份有限公司 微透镜阵列的制备方法、显示装置的制备方法及显示装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19904307C2 (de) * 1999-01-28 2001-09-20 Bosch Gmbh Robert Verfahren zur Herstellung von dreidimensionalen Strukturen mittels eines Ätzprozesses
DE10135872A1 (de) * 2001-07-24 2003-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Linse
JP4012156B2 (ja) * 2004-02-02 2007-11-21 独立行政法人科学技術振興機構 圧電素子の製造方法
TW200625699A (en) * 2004-11-24 2006-07-16 Sumitomo Chemical Co Semiconductor substrate, method for manufacture thereof, and light emitting element
TWI415288B (zh) * 2005-03-22 2013-11-11 住友化學股份有限公司 獨立基板、其製造方法,以及半導體發光元件
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
US8691674B2 (en) * 2005-09-29 2014-04-08 Sumitomo Chemical Company, Limited Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
KR100998017B1 (ko) * 2009-02-23 2010-12-03 삼성엘이디 주식회사 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지
JP5650388B2 (ja) * 2009-10-05 2015-01-07 三菱電機株式会社 有機elパネル、パネル接合型発光装置、有機elパネルの製造方法
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置

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Publication number Priority date Publication date Assignee Title
US4357704A (en) * 1980-09-15 1982-11-02 Science Applications, Inc. Disc or slab laser apparatus employing compound parabolic concentrator
US4514252A (en) 1982-11-18 1985-04-30 Hewlett-Packard Company Technique of producing tapered features in integrated circuits
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS6144627A (ja) 1984-08-09 1986-03-04 Pioneer Electronic Corp マイクロフレネルレンズの製造方法
EP0199497B1 (en) * 1985-04-10 1992-01-02 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
WO1987002179A1 (en) 1985-09-27 1987-04-09 Burroughs Corporation Method of fabricating a tapered via hole in polyimide
FR2590409B1 (fr) * 1985-11-15 1987-12-11 Commissariat Energie Atomique Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede
US4698128A (en) * 1986-11-17 1987-10-06 Motorola, Inc. Sloped contact etch process
GB8715211D0 (en) 1987-06-29 1987-08-05 Secr Defence Lensed photo detector
US5161059A (en) 1987-09-21 1992-11-03 Massachusetts Institute Of Technology High-efficiency, multilevel, diffractive optical elements
US4902377A (en) * 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US5227915A (en) 1990-02-13 1993-07-13 Holo-Or Ltd. Diffractive optical element
US5073007A (en) 1990-06-11 1991-12-17 Holo-Or Ltd. Diffractive optical element
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
US5286338A (en) * 1993-03-01 1994-02-15 At&T Bell Laboratories Methods for making microlens arrays
JP2795126B2 (ja) * 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110824590A (zh) * 2019-11-25 2020-02-21 京东方科技集团股份有限公司 微透镜阵列的制备方法、显示装置的制备方法及显示装置
US11611056B2 (en) 2019-11-25 2023-03-21 Boe Technology Group Co., Ltd. Display apparatus and method for manufacturing the same

Also Published As

Publication number Publication date
US6682657B2 (en) 2004-01-27
KR100859673B1 (enExample) 2009-01-12
PL327667A1 (en) 1998-12-21
KR19990077120A (ko) 1999-10-25
CA2242634C (en) 2006-08-15
CN1212768A (zh) 1999-03-31
JP2000503136A (ja) 2000-03-14
JP3965213B2 (ja) 2007-08-29
CA2242634A1 (en) 1997-07-17
US20030057177A1 (en) 2003-03-27
GB9813813D0 (en) 1998-08-26
CN1135438C (zh) 2004-01-21
GB2322833B (en) 1999-10-20
DE69740180D1 (de) 2011-06-09
EP0873542B1 (en) 2011-04-27
WO1997025653A1 (en) 1997-07-17
GB2322833A (en) 1998-09-09
ATE507496T1 (de) 2011-05-15
GB9600469D0 (en) 1996-03-13
EP0873542A1 (en) 1998-10-28
AU1388497A (en) 1997-08-01

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Legal Events

Date Code Title Description
LAPS Decisions on the lapse of the protection rights

Effective date: 20120109