PL194893B1 - Sposób formowania optycznej ograniczającej struktury - Google Patents
Sposób formowania optycznej ograniczającej strukturyInfo
- Publication number
- PL194893B1 PL194893B1 PL327667A PL32766797A PL194893B1 PL 194893 B1 PL194893 B1 PL 194893B1 PL 327667 A PL327667 A PL 327667A PL 32766797 A PL32766797 A PL 32766797A PL 194893 B1 PL194893 B1 PL 194893B1
- Authority
- PL
- Poland
- Prior art keywords
- substrate
- protective coating
- etching
- ion beam
- aswidrs
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Saccharide Compounds (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9600469.2A GB9600469D0 (en) | 1996-01-10 | 1996-01-10 | Three dimensional etching process |
| PCT/GB1997/000043 WO1997025653A1 (en) | 1996-01-10 | 1997-01-09 | Three-dimensional etching process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL327667A1 PL327667A1 (en) | 1998-12-21 |
| PL194893B1 true PL194893B1 (pl) | 2007-07-31 |
Family
ID=10786847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL327667A PL194893B1 (pl) | 1996-01-10 | 1997-01-09 | Sposób formowania optycznej ograniczającej struktury |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6682657B2 (enExample) |
| EP (1) | EP0873542B1 (enExample) |
| JP (1) | JP3965213B2 (enExample) |
| KR (1) | KR19990077120A (enExample) |
| CN (1) | CN1135438C (enExample) |
| AT (1) | ATE507496T1 (enExample) |
| AU (1) | AU1388497A (enExample) |
| CA (1) | CA2242634C (enExample) |
| DE (1) | DE69740180D1 (enExample) |
| GB (2) | GB9600469D0 (enExample) |
| PL (1) | PL194893B1 (enExample) |
| WO (1) | WO1997025653A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110824590A (zh) * | 2019-11-25 | 2020-02-21 | 京东方科技集团股份有限公司 | 微透镜阵列的制备方法、显示装置的制备方法及显示装置 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19904307C2 (de) * | 1999-01-28 | 2001-09-20 | Bosch Gmbh Robert | Verfahren zur Herstellung von dreidimensionalen Strukturen mittels eines Ätzprozesses |
| DE10135872A1 (de) * | 2001-07-24 | 2003-02-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Linse |
| JP4012156B2 (ja) * | 2004-02-02 | 2007-11-21 | 独立行政法人科学技術振興機構 | 圧電素子の製造方法 |
| TW200625699A (en) * | 2004-11-24 | 2006-07-16 | Sumitomo Chemical Co | Semiconductor substrate, method for manufacture thereof, and light emitting element |
| TWI415288B (zh) * | 2005-03-22 | 2013-11-11 | 住友化學股份有限公司 | 獨立基板、其製造方法,以及半導體發光元件 |
| JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
| US8691674B2 (en) * | 2005-09-29 | 2014-04-08 | Sumitomo Chemical Company, Limited | Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device |
| KR100998017B1 (ko) * | 2009-02-23 | 2010-12-03 | 삼성엘이디 주식회사 | 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지 |
| JP5650388B2 (ja) * | 2009-10-05 | 2015-01-07 | 三菱電機株式会社 | 有機elパネル、パネル接合型発光装置、有機elパネルの製造方法 |
| JP2019121750A (ja) * | 2018-01-11 | 2019-07-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357704A (en) * | 1980-09-15 | 1982-11-02 | Science Applications, Inc. | Disc or slab laser apparatus employing compound parabolic concentrator |
| US4514252A (en) | 1982-11-18 | 1985-04-30 | Hewlett-Packard Company | Technique of producing tapered features in integrated circuits |
| CA1237824A (en) * | 1984-04-17 | 1988-06-07 | Takashi Mimura | Resonant tunneling semiconductor device |
| JPS6144627A (ja) | 1984-08-09 | 1986-03-04 | Pioneer Electronic Corp | マイクロフレネルレンズの製造方法 |
| EP0199497B1 (en) * | 1985-04-10 | 1992-01-02 | Fujitsu Limited | Process for fabricating a self-aligned bipolar transistor |
| WO1987002179A1 (en) | 1985-09-27 | 1987-04-09 | Burroughs Corporation | Method of fabricating a tapered via hole in polyimide |
| FR2590409B1 (fr) * | 1985-11-15 | 1987-12-11 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede |
| US4698128A (en) * | 1986-11-17 | 1987-10-06 | Motorola, Inc. | Sloped contact etch process |
| GB8715211D0 (en) | 1987-06-29 | 1987-08-05 | Secr Defence | Lensed photo detector |
| US5161059A (en) | 1987-09-21 | 1992-11-03 | Massachusetts Institute Of Technology | High-efficiency, multilevel, diffractive optical elements |
| US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
| US5227915A (en) | 1990-02-13 | 1993-07-13 | Holo-Or Ltd. | Diffractive optical element |
| US5073007A (en) | 1990-06-11 | 1991-12-17 | Holo-Or Ltd. | Diffractive optical element |
| US5316640A (en) * | 1991-06-19 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Fabricating method of micro lens |
| US5286338A (en) * | 1993-03-01 | 1994-02-15 | At&T Bell Laboratories | Methods for making microlens arrays |
| JP2795126B2 (ja) * | 1993-04-16 | 1998-09-10 | 株式会社デンソー | 曲面加工方法及びその装置 |
| US5853960A (en) * | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
-
1996
- 1996-01-10 GB GBGB9600469.2A patent/GB9600469D0/en active Pending
-
1997
- 1997-01-09 AU AU13884/97A patent/AU1388497A/en not_active Abandoned
- 1997-01-09 KR KR1019980705256A patent/KR19990077120A/ko active Granted
- 1997-01-09 CN CNB971927529A patent/CN1135438C/zh not_active Expired - Fee Related
- 1997-01-09 JP JP52497697A patent/JP3965213B2/ja not_active Expired - Fee Related
- 1997-01-09 CA CA002242634A patent/CA2242634C/en not_active Expired - Fee Related
- 1997-01-09 PL PL327667A patent/PL194893B1/pl not_active IP Right Cessation
- 1997-01-09 US US09/101,306 patent/US6682657B2/en not_active Expired - Fee Related
- 1997-01-09 DE DE69740180T patent/DE69740180D1/de not_active Expired - Lifetime
- 1997-01-09 EP EP97900295A patent/EP0873542B1/en not_active Expired - Lifetime
- 1997-01-09 AT AT97900295T patent/ATE507496T1/de not_active IP Right Cessation
- 1997-01-09 GB GB9813813A patent/GB2322833B/en not_active Expired - Fee Related
- 1997-01-09 WO PCT/GB1997/000043 patent/WO1997025653A1/en not_active Ceased
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110824590A (zh) * | 2019-11-25 | 2020-02-21 | 京东方科技集团股份有限公司 | 微透镜阵列的制备方法、显示装置的制备方法及显示装置 |
| US11611056B2 (en) | 2019-11-25 | 2023-03-21 | Boe Technology Group Co., Ltd. | Display apparatus and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US6682657B2 (en) | 2004-01-27 |
| KR100859673B1 (enExample) | 2009-01-12 |
| PL327667A1 (en) | 1998-12-21 |
| KR19990077120A (ko) | 1999-10-25 |
| CA2242634C (en) | 2006-08-15 |
| CN1212768A (zh) | 1999-03-31 |
| JP2000503136A (ja) | 2000-03-14 |
| JP3965213B2 (ja) | 2007-08-29 |
| CA2242634A1 (en) | 1997-07-17 |
| US20030057177A1 (en) | 2003-03-27 |
| GB9813813D0 (en) | 1998-08-26 |
| CN1135438C (zh) | 2004-01-21 |
| GB2322833B (en) | 1999-10-20 |
| DE69740180D1 (de) | 2011-06-09 |
| EP0873542B1 (en) | 2011-04-27 |
| WO1997025653A1 (en) | 1997-07-17 |
| GB2322833A (en) | 1998-09-09 |
| ATE507496T1 (de) | 2011-05-15 |
| GB9600469D0 (en) | 1996-03-13 |
| EP0873542A1 (en) | 1998-10-28 |
| AU1388497A (en) | 1997-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3735880B2 (ja) | 半導体材料支持体上へのレリーフ構造の製造方法 | |
| US7056809B2 (en) | Method for ion treating a semiconductor material for subsequent bonding | |
| PL194893B1 (pl) | Sposób formowania optycznej ograniczającej struktury | |
| KR100250448B1 (ko) | 실리콘나이트라이드 막을 이용한 실리콘 나노 구조의형성 방법 | |
| DE112019001415B4 (de) | Trägerplatte für eine lokale Erwärmung in thermischen Verarbeitungssystemen | |
| US8937019B2 (en) | Techniques for generating three dimensional structures | |
| US4035226A (en) | Method of preparing portions of a semiconductor wafer surface for further processing | |
| JPS63136618A (ja) | エネルギ−照射方法 | |
| JPS63124528A (ja) | 半導体製造装置 | |
| KR19990020746A (ko) | 레이저 어닐 장치 | |
| JP3439488B2 (ja) | 半導体装置の製造方法 | |
| JP4491851B2 (ja) | 表面に識別パターンを有する多層基板の製造方法 | |
| JPH03211717A (ja) | 半導体ウェハー識別記号の付与方法 | |
| KR100372815B1 (ko) | 반도체 소자의 미세 콘택홀 형성방법 | |
| RU2091992C1 (ru) | Способ изготовления масок на основе полимерных пленок | |
| JPS6410090B2 (enExample) | ||
| JPH04123002A (ja) | レンズアレイの製造方法及びその製造装置 | |
| JPS57111020A (en) | Manufacture of semiconductor device | |
| WO2008009961A2 (en) | Improvements in hydrogen trapping | |
| JPS5710930A (en) | Dry development method | |
| JPS59213135A (ja) | 半導体の微細加工方法 | |
| JPS59117112A (ja) | 不純物拡散方法およびその装置 | |
| JPH0559577A (ja) | 微細加工方法 | |
| JPS60216541A (ja) | 半導体基板への不純物導入方法 | |
| JPS60196703A (ja) | 光導波路形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Decisions on the lapse of the protection rights |
Effective date: 20120109 |