KR100859673B1 - - Google Patents

Info

Publication number
KR100859673B1
KR100859673B1 KR1019980705256A KR19980705256A KR100859673B1 KR 100859673 B1 KR100859673 B1 KR 100859673B1 KR 1019980705256 A KR1019980705256 A KR 1019980705256A KR 19980705256 A KR19980705256 A KR 19980705256A KR 100859673 B1 KR100859673 B1 KR 100859673B1
Authority
KR
South Korea
Prior art keywords
substrate
mask
etch
iterations
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980705256A
Other languages
English (en)
Korean (ko)
Other versions
KR19990077120A (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR19990077120A publication Critical patent/KR19990077120A/ko
Application granted granted Critical
Publication of KR100859673B1 publication Critical patent/KR100859673B1/ko
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80Etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001Phase modulating patterns, e.g. refractive index patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0041Photosensitive materials providing an etching agent upon exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/73Etching of wafers, substrates or parts of devices using masks for insulating materials
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0012Arrays characterised by the manufacturing method
    • G02B3/0018Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/0006Arrays
    • G02B3/0037Arrays characterized by the distribution or form of lenses
    • G02B3/0056Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Saccharide Compounds (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
KR1019980705256A 1996-01-10 1997-01-09 3차원 에칭 방법 Granted KR19990077120A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9600469.2A GB9600469D0 (en) 1996-01-10 1996-01-10 Three dimensional etching process
GB9600469.2 1996-01-10

Publications (2)

Publication Number Publication Date
KR19990077120A KR19990077120A (ko) 1999-10-25
KR100859673B1 true KR100859673B1 (enExample) 2009-01-12

Family

ID=10786847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980705256A Granted KR19990077120A (ko) 1996-01-10 1997-01-09 3차원 에칭 방법

Country Status (12)

Country Link
US (1) US6682657B2 (enExample)
EP (1) EP0873542B1 (enExample)
JP (1) JP3965213B2 (enExample)
KR (1) KR19990077120A (enExample)
CN (1) CN1135438C (enExample)
AT (1) ATE507496T1 (enExample)
AU (1) AU1388497A (enExample)
CA (1) CA2242634C (enExample)
DE (1) DE69740180D1 (enExample)
GB (2) GB9600469D0 (enExample)
PL (1) PL194893B1 (enExample)
WO (1) WO1997025653A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19904307C2 (de) * 1999-01-28 2001-09-20 Bosch Gmbh Robert Verfahren zur Herstellung von dreidimensionalen Strukturen mittels eines Ätzprozesses
DE10135872A1 (de) * 2001-07-24 2003-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Linse
JP4012156B2 (ja) * 2004-02-02 2007-11-21 独立行政法人科学技術振興機構 圧電素子の製造方法
TW200625699A (en) * 2004-11-24 2006-07-16 Sumitomo Chemical Co Semiconductor substrate, method for manufacture thereof, and light emitting element
TWI415288B (zh) * 2005-03-22 2013-11-11 住友化學股份有限公司 獨立基板、其製造方法,以及半導體發光元件
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
US8691674B2 (en) * 2005-09-29 2014-04-08 Sumitomo Chemical Company, Limited Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
KR100998017B1 (ko) * 2009-02-23 2010-12-03 삼성엘이디 주식회사 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지
JP5650388B2 (ja) * 2009-10-05 2015-01-07 三菱電機株式会社 有機elパネル、パネル接合型発光装置、有機elパネルの製造方法
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN110824590A (zh) 2019-11-25 2020-02-21 京东方科技集团股份有限公司 微透镜阵列的制备方法、显示装置的制备方法及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698127A (en) * 1985-04-10 1987-10-06 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
US4698128A (en) * 1986-11-17 1987-10-06 Motorola, Inc. Sloped contact etch process
US5286338A (en) * 1993-03-01 1994-02-15 At&T Bell Laboratories Methods for making microlens arrays

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357704A (en) * 1980-09-15 1982-11-02 Science Applications, Inc. Disc or slab laser apparatus employing compound parabolic concentrator
US4514252A (en) 1982-11-18 1985-04-30 Hewlett-Packard Company Technique of producing tapered features in integrated circuits
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS6144627A (ja) 1984-08-09 1986-03-04 Pioneer Electronic Corp マイクロフレネルレンズの製造方法
WO1987002179A1 (en) 1985-09-27 1987-04-09 Burroughs Corporation Method of fabricating a tapered via hole in polyimide
FR2590409B1 (fr) * 1985-11-15 1987-12-11 Commissariat Energie Atomique Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede
GB8715211D0 (en) 1987-06-29 1987-08-05 Secr Defence Lensed photo detector
US5161059A (en) 1987-09-21 1992-11-03 Massachusetts Institute Of Technology High-efficiency, multilevel, diffractive optical elements
US4902377A (en) * 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US5227915A (en) 1990-02-13 1993-07-13 Holo-Or Ltd. Diffractive optical element
US5073007A (en) 1990-06-11 1991-12-17 Holo-Or Ltd. Diffractive optical element
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
JP2795126B2 (ja) * 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698127A (en) * 1985-04-10 1987-10-06 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
US4698128A (en) * 1986-11-17 1987-10-06 Motorola, Inc. Sloped contact etch process
US5286338A (en) * 1993-03-01 1994-02-15 At&T Bell Laboratories Methods for making microlens arrays

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin Vol.27, No.6, pp.3259-3260, Nov., 1984 *
IBM Technical Disclosure Bulletin, vol.28, no.7, pp.3136-3137, Dec. 1985 *

Also Published As

Publication number Publication date
US6682657B2 (en) 2004-01-27
PL327667A1 (en) 1998-12-21
KR19990077120A (ko) 1999-10-25
CA2242634C (en) 2006-08-15
CN1212768A (zh) 1999-03-31
JP2000503136A (ja) 2000-03-14
JP3965213B2 (ja) 2007-08-29
CA2242634A1 (en) 1997-07-17
US20030057177A1 (en) 2003-03-27
GB9813813D0 (en) 1998-08-26
CN1135438C (zh) 2004-01-21
PL194893B1 (pl) 2007-07-31
GB2322833B (en) 1999-10-20
DE69740180D1 (de) 2011-06-09
EP0873542B1 (en) 2011-04-27
WO1997025653A1 (en) 1997-07-17
GB2322833A (en) 1998-09-09
ATE507496T1 (de) 2011-05-15
GB9600469D0 (en) 1996-03-13
EP0873542A1 (en) 1998-10-28
AU1388497A (en) 1997-08-01

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