KR100859673B1 - - Google Patents
Info
- Publication number
- KR100859673B1 KR100859673B1 KR1019980705256A KR19980705256A KR100859673B1 KR 100859673 B1 KR100859673 B1 KR 100859673B1 KR 1019980705256 A KR1019980705256 A KR 1019980705256A KR 19980705256 A KR19980705256 A KR 19980705256A KR 100859673 B1 KR100859673 B1 KR 100859673B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- mask
- etch
- iterations
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Saccharide Compounds (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9600469.2A GB9600469D0 (en) | 1996-01-10 | 1996-01-10 | Three dimensional etching process |
| GB9600469.2 | 1996-01-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990077120A KR19990077120A (ko) | 1999-10-25 |
| KR100859673B1 true KR100859673B1 (enExample) | 2009-01-12 |
Family
ID=10786847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980705256A Granted KR19990077120A (ko) | 1996-01-10 | 1997-01-09 | 3차원 에칭 방법 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6682657B2 (enExample) |
| EP (1) | EP0873542B1 (enExample) |
| JP (1) | JP3965213B2 (enExample) |
| KR (1) | KR19990077120A (enExample) |
| CN (1) | CN1135438C (enExample) |
| AT (1) | ATE507496T1 (enExample) |
| AU (1) | AU1388497A (enExample) |
| CA (1) | CA2242634C (enExample) |
| DE (1) | DE69740180D1 (enExample) |
| GB (2) | GB9600469D0 (enExample) |
| PL (1) | PL194893B1 (enExample) |
| WO (1) | WO1997025653A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19904307C2 (de) * | 1999-01-28 | 2001-09-20 | Bosch Gmbh Robert | Verfahren zur Herstellung von dreidimensionalen Strukturen mittels eines Ätzprozesses |
| DE10135872A1 (de) * | 2001-07-24 | 2003-02-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Linse |
| JP4012156B2 (ja) * | 2004-02-02 | 2007-11-21 | 独立行政法人科学技術振興機構 | 圧電素子の製造方法 |
| TW200625699A (en) * | 2004-11-24 | 2006-07-16 | Sumitomo Chemical Co | Semiconductor substrate, method for manufacture thereof, and light emitting element |
| TWI415288B (zh) * | 2005-03-22 | 2013-11-11 | 住友化學股份有限公司 | 獨立基板、其製造方法,以及半導體發光元件 |
| JP2007019318A (ja) * | 2005-07-08 | 2007-01-25 | Sumitomo Chemical Co Ltd | 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法 |
| US8691674B2 (en) * | 2005-09-29 | 2014-04-08 | Sumitomo Chemical Company, Limited | Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device |
| KR100998017B1 (ko) * | 2009-02-23 | 2010-12-03 | 삼성엘이디 주식회사 | 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지 |
| JP5650388B2 (ja) * | 2009-10-05 | 2015-01-07 | 三菱電機株式会社 | 有機elパネル、パネル接合型発光装置、有機elパネルの製造方法 |
| JP2019121750A (ja) * | 2018-01-11 | 2019-07-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
| CN110824590A (zh) | 2019-11-25 | 2020-02-21 | 京东方科技集团股份有限公司 | 微透镜阵列的制备方法、显示装置的制备方法及显示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698127A (en) * | 1985-04-10 | 1987-10-06 | Fujitsu Limited | Process for fabricating a self-aligned bipolar transistor |
| US4698128A (en) * | 1986-11-17 | 1987-10-06 | Motorola, Inc. | Sloped contact etch process |
| US5286338A (en) * | 1993-03-01 | 1994-02-15 | At&T Bell Laboratories | Methods for making microlens arrays |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4357704A (en) * | 1980-09-15 | 1982-11-02 | Science Applications, Inc. | Disc or slab laser apparatus employing compound parabolic concentrator |
| US4514252A (en) | 1982-11-18 | 1985-04-30 | Hewlett-Packard Company | Technique of producing tapered features in integrated circuits |
| CA1237824A (en) * | 1984-04-17 | 1988-06-07 | Takashi Mimura | Resonant tunneling semiconductor device |
| JPS6144627A (ja) | 1984-08-09 | 1986-03-04 | Pioneer Electronic Corp | マイクロフレネルレンズの製造方法 |
| WO1987002179A1 (en) | 1985-09-27 | 1987-04-09 | Burroughs Corporation | Method of fabricating a tapered via hole in polyimide |
| FR2590409B1 (fr) * | 1985-11-15 | 1987-12-11 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede |
| GB8715211D0 (en) | 1987-06-29 | 1987-08-05 | Secr Defence | Lensed photo detector |
| US5161059A (en) | 1987-09-21 | 1992-11-03 | Massachusetts Institute Of Technology | High-efficiency, multilevel, diffractive optical elements |
| US4902377A (en) * | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
| US5227915A (en) | 1990-02-13 | 1993-07-13 | Holo-Or Ltd. | Diffractive optical element |
| US5073007A (en) | 1990-06-11 | 1991-12-17 | Holo-Or Ltd. | Diffractive optical element |
| US5316640A (en) * | 1991-06-19 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Fabricating method of micro lens |
| JP2795126B2 (ja) * | 1993-04-16 | 1998-09-10 | 株式会社デンソー | 曲面加工方法及びその装置 |
| US5853960A (en) * | 1998-03-18 | 1998-12-29 | Trw Inc. | Method for producing a micro optical semiconductor lens |
-
1996
- 1996-01-10 GB GBGB9600469.2A patent/GB9600469D0/en active Pending
-
1997
- 1997-01-09 AU AU13884/97A patent/AU1388497A/en not_active Abandoned
- 1997-01-09 KR KR1019980705256A patent/KR19990077120A/ko active Granted
- 1997-01-09 CN CNB971927529A patent/CN1135438C/zh not_active Expired - Fee Related
- 1997-01-09 JP JP52497697A patent/JP3965213B2/ja not_active Expired - Fee Related
- 1997-01-09 CA CA002242634A patent/CA2242634C/en not_active Expired - Fee Related
- 1997-01-09 PL PL327667A patent/PL194893B1/pl not_active IP Right Cessation
- 1997-01-09 US US09/101,306 patent/US6682657B2/en not_active Expired - Fee Related
- 1997-01-09 DE DE69740180T patent/DE69740180D1/de not_active Expired - Lifetime
- 1997-01-09 EP EP97900295A patent/EP0873542B1/en not_active Expired - Lifetime
- 1997-01-09 AT AT97900295T patent/ATE507496T1/de not_active IP Right Cessation
- 1997-01-09 GB GB9813813A patent/GB2322833B/en not_active Expired - Fee Related
- 1997-01-09 WO PCT/GB1997/000043 patent/WO1997025653A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698127A (en) * | 1985-04-10 | 1987-10-06 | Fujitsu Limited | Process for fabricating a self-aligned bipolar transistor |
| US4698128A (en) * | 1986-11-17 | 1987-10-06 | Motorola, Inc. | Sloped contact etch process |
| US5286338A (en) * | 1993-03-01 | 1994-02-15 | At&T Bell Laboratories | Methods for making microlens arrays |
Non-Patent Citations (2)
| Title |
|---|
| IBM Technical Disclosure Bulletin Vol.27, No.6, pp.3259-3260, Nov., 1984 * |
| IBM Technical Disclosure Bulletin, vol.28, no.7, pp.3136-3137, Dec. 1985 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US6682657B2 (en) | 2004-01-27 |
| PL327667A1 (en) | 1998-12-21 |
| KR19990077120A (ko) | 1999-10-25 |
| CA2242634C (en) | 2006-08-15 |
| CN1212768A (zh) | 1999-03-31 |
| JP2000503136A (ja) | 2000-03-14 |
| JP3965213B2 (ja) | 2007-08-29 |
| CA2242634A1 (en) | 1997-07-17 |
| US20030057177A1 (en) | 2003-03-27 |
| GB9813813D0 (en) | 1998-08-26 |
| CN1135438C (zh) | 2004-01-21 |
| PL194893B1 (pl) | 2007-07-31 |
| GB2322833B (en) | 1999-10-20 |
| DE69740180D1 (de) | 2011-06-09 |
| EP0873542B1 (en) | 2011-04-27 |
| WO1997025653A1 (en) | 1997-07-17 |
| GB2322833A (en) | 1998-09-09 |
| ATE507496T1 (de) | 2011-05-15 |
| GB9600469D0 (en) | 1996-03-13 |
| EP0873542A1 (en) | 1998-10-28 |
| AU1388497A (en) | 1997-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| A201 | Request for examination | ||
| AMND | Amendment | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| AMND | Amendment | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
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| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
St.27 status event code: N-2-6-B10-B15-exm-PE0601 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
St.27 status event code: A-3-3-V10-V11-apl-PJ0201 |
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| AMND | Amendment | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PB0901 | Examination by re-examination before a trial |
St.27 status event code: A-6-3-E10-E12-rex-PB0901 |
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St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| B601 | Maintenance of original decision after re-examination before a trial | ||
| PB0601 | Maintenance of original decision after re-examination before a trial |
St.27 status event code: N-3-6-B10-B17-rex-PB0601 |
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| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20050805 Effective date: 20060828 Free format text: TRIAL NUMBER: 2005101005139; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20050805 Effective date: 20060828 |
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| PJ1301 | Trial decision |
St.27 status event code: A-3-3-V10-V15-crt-PJ1301 Decision date: 20060828 Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 1998 705256 Appeal request date: 20050805 Appellate body name: Patent Examination Board Decision authority category: Office appeal board Decision identifier: 2005101005139 |
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| PS0901 | Examination by remand of revocation |
St.27 status event code: A-6-3-E10-E12-rex-PS0901 |
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| S901 | Examination by remand of revocation | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| PS0601 | Decision to reject again after remand of revocation |
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