CN1135438C - 三维蚀刻方法 - Google Patents

三维蚀刻方法 Download PDF

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Publication number
CN1135438C
CN1135438C CNB971927529A CN97192752A CN1135438C CN 1135438 C CN1135438 C CN 1135438C CN B971927529 A CNB971927529 A CN B971927529A CN 97192752 A CN97192752 A CN 97192752A CN 1135438 C CN1135438 C CN 1135438C
Authority
CN
China
Prior art keywords
substrate
resist
etching
etchant
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB971927529A
Other languages
English (en)
Chinese (zh)
Other versions
CN1212768A (zh
Inventor
D��T��ŷ��
D·T·杜顿
°
A·B·德安
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of CN1212768A publication Critical patent/CN1212768A/zh
Application granted granted Critical
Publication of CN1135438C publication Critical patent/CN1135438C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Saccharide Compounds (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
CNB971927529A 1996-01-10 1997-01-09 三维蚀刻方法 Expired - Fee Related CN1135438C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9600469.2A GB9600469D0 (en) 1996-01-10 1996-01-10 Three dimensional etching process
GB9600469.2 1996-01-10

Publications (2)

Publication Number Publication Date
CN1212768A CN1212768A (zh) 1999-03-31
CN1135438C true CN1135438C (zh) 2004-01-21

Family

ID=10786847

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB971927529A Expired - Fee Related CN1135438C (zh) 1996-01-10 1997-01-09 三维蚀刻方法

Country Status (12)

Country Link
US (1) US6682657B2 (enExample)
EP (1) EP0873542B1 (enExample)
JP (1) JP3965213B2 (enExample)
KR (1) KR19990077120A (enExample)
CN (1) CN1135438C (enExample)
AT (1) ATE507496T1 (enExample)
AU (1) AU1388497A (enExample)
CA (1) CA2242634C (enExample)
DE (1) DE69740180D1 (enExample)
GB (2) GB9600469D0 (enExample)
PL (1) PL194893B1 (enExample)
WO (1) WO1997025653A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19904307C2 (de) * 1999-01-28 2001-09-20 Bosch Gmbh Robert Verfahren zur Herstellung von dreidimensionalen Strukturen mittels eines Ätzprozesses
DE10135872A1 (de) * 2001-07-24 2003-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Linse
JP4012156B2 (ja) * 2004-02-02 2007-11-21 独立行政法人科学技術振興機構 圧電素子の製造方法
TW200625699A (en) * 2004-11-24 2006-07-16 Sumitomo Chemical Co Semiconductor substrate, method for manufacture thereof, and light emitting element
TWI415288B (zh) * 2005-03-22 2013-11-11 住友化學股份有限公司 獨立基板、其製造方法，以及半導體發光元件
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
US8691674B2 (en) * 2005-09-29 2014-04-08 Sumitomo Chemical Company, Limited Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
KR100998017B1 (ko) * 2009-02-23 2010-12-03 삼성엘이디 주식회사 발광소자 패키지용 렌즈 및 이를 구비하는 발광소자 패키지
JP5650388B2 (ja) * 2009-10-05 2015-01-07 三菱電機株式会社 有機ｅｌパネル、パネル接合型発光装置、有機ｅｌパネルの製造方法
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置
CN110824590A (zh) 2019-11-25 2020-02-21 京东方科技集团股份有限公司 微透镜阵列的制备方法、显示装置的制备方法及显示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357704A (en) * 1980-09-15 1982-11-02 Science Applications, Inc. Disc or slab laser apparatus employing compound parabolic concentrator
US4514252A (en) 1982-11-18 1985-04-30 Hewlett-Packard Company Technique of producing tapered features in integrated circuits
CA1237824A (en) * 1984-04-17 1988-06-07 Takashi Mimura Resonant tunneling semiconductor device
JPS6144627A (ja) 1984-08-09 1986-03-04 Pioneer Electronic Corp マイクロフレネルレンズの製造方法
EP0199497B1 (en) * 1985-04-10 1992-01-02 Fujitsu Limited Process for fabricating a self-aligned bipolar transistor
WO1987002179A1 (en) 1985-09-27 1987-04-09 Burroughs Corporation Method of fabricating a tapered via hole in polyimide
FR2590409B1 (fr) * 1985-11-15 1987-12-11 Commissariat Energie Atomique Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede
US4698128A (en) * 1986-11-17 1987-10-06 Motorola, Inc. Sloped contact etch process
GB8715211D0 (en) 1987-06-29 1987-08-05 Secr Defence Lensed photo detector
US5161059A (en) 1987-09-21 1992-11-03 Massachusetts Institute Of Technology High-efficiency, multilevel, diffractive optical elements
US4902377A (en) * 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US5227915A (en) 1990-02-13 1993-07-13 Holo-Or Ltd. Diffractive optical element
US5073007A (en) 1990-06-11 1991-12-17 Holo-Or Ltd. Diffractive optical element
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
US5286338A (en) * 1993-03-01 1994-02-15 At&T Bell Laboratories Methods for making microlens arrays
JP2795126B2 (ja) * 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
US5853960A (en) * 1998-03-18 1998-12-29 Trw Inc. Method for producing a micro optical semiconductor lens

Also Published As

Publication number Publication date
US6682657B2 (en) 2004-01-27
KR100859673B1 (enExample) 2009-01-12
PL327667A1 (en) 1998-12-21
KR19990077120A (ko) 1999-10-25
CA2242634C (en) 2006-08-15
CN1212768A (zh) 1999-03-31
JP2000503136A (ja) 2000-03-14
JP3965213B2 (ja) 2007-08-29
CA2242634A1 (en) 1997-07-17
US20030057177A1 (en) 2003-03-27
GB9813813D0 (en) 1998-08-26
PL194893B1 (pl) 2007-07-31
GB2322833B (en) 1999-10-20
DE69740180D1 (de) 2011-06-09
EP0873542B1 (en) 2011-04-27
WO1997025653A1 (en) 1997-07-17
GB2322833A (en) 1998-09-09
ATE507496T1 (de) 2011-05-15
GB9600469D0 (en) 1996-03-13
EP0873542A1 (en) 1998-10-28
AU1388497A (en) 1997-08-01

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: JINNITICK CO., LTD.

Free format text: FORMER OWNER: ENGLAND MINISTRY OF NATIONAL DEFENCE

Effective date: 20031225

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20031225

Address after: London, England

Patentee after: Qinitik Co., Ltd.

Address before: England Hampshire

Patentee before: British Ministry of Defence

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040121

Termination date: 20140109