JPH0313743B2 - - Google Patents

Info

Publication number
JPH0313743B2
JPH0313743B2 JP55126897A JP12689780A JPH0313743B2 JP H0313743 B2 JPH0313743 B2 JP H0313743B2 JP 55126897 A JP55126897 A JP 55126897A JP 12689780 A JP12689780 A JP 12689780A JP H0313743 B2 JPH0313743 B2 JP H0313743B2
Authority
JP
Japan
Prior art keywords
layer
etching rate
ion beam
incident angle
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55126897A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5750436A (en
Inventor
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12689780A priority Critical patent/JPS5750436A/ja
Publication of JPS5750436A publication Critical patent/JPS5750436A/ja
Publication of JPH0313743B2 publication Critical patent/JPH0313743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP12689780A 1980-09-12 1980-09-12 Manufacture of semiconductor device Granted JPS5750436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12689780A JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12689780A JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5750436A JPS5750436A (en) 1982-03-24
JPH0313743B2 true JPH0313743B2 (enExample) 1991-02-25

Family

ID=14946576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12689780A Granted JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5750436A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173839A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 基板の平担化法
JPS60242623A (ja) * 1984-05-16 1985-12-02 Mitsubishi Electric Corp 半導体装置の製造方法
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer
JPS6183031U (enExample) * 1984-11-07 1986-06-02
JPH0718024B2 (ja) * 1985-03-29 1995-03-01 富士写真フイルム株式会社 平但化方法
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
FR2587838B1 (fr) * 1985-09-20 1987-11-27 Radiotechnique Compelec Procede pour aplanir la surface d'un dispositif semi-conducteur utilisant du nitrure de silicium comme materiau isolant
JP2944082B2 (ja) * 1988-03-10 1999-08-30 三洋電機株式会社 平坦化方法
JPH0555220A (ja) * 1991-08-26 1993-03-05 Nec Corp 半導体装置の製造方法
JP3889222B2 (ja) 2000-12-26 2007-03-07 アルプス電気株式会社 垂直磁気記録ヘッドの製造方法
US7611610B2 (en) 2003-11-18 2009-11-03 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
JP4775806B2 (ja) 2004-02-10 2011-09-21 Ｔｄｋ株式会社 磁気記録媒体の製造方法
JP4008420B2 (ja) 2004-02-23 2007-11-14 Ｔｄｋ株式会社 磁気記録媒体の製造方法
JP2008010102A (ja) * 2006-06-30 2008-01-17 Toshiba Corp 磁気記録媒体の製造方法および製造装置
JP5932033B2 (ja) * 2012-06-29 2016-06-08 キヤノンアネルバ株式会社 イオンビーム処理方法およびイオンビーム処理装置
JP6666680B2 (ja) 2015-10-09 2020-03-18 セコ コーポレイション リミテッド 防曇剤
JP6738149B2 (ja) * 2016-01-08 2020-08-12 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (enExample) * 1974-01-30 1975-08-25
JPS586306B2 (ja) * 1974-10-25 1983-02-03 株式会社日立製作所 ハンドウタイソウチノ セイゾウホウホウ
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion

Also Published As

Publication number Publication date
JPS5750436A (en) 1982-03-24

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