GB8715211D0 - Lensed photo detector - Google Patents
Lensed photo detectorInfo
- Publication number
- GB8715211D0 GB8715211D0 GB878715211A GB8715211A GB8715211D0 GB 8715211 D0 GB8715211 D0 GB 8715211D0 GB 878715211 A GB878715211 A GB 878715211A GB 8715211 A GB8715211 A GB 8715211A GB 8715211 D0 GB8715211 D0 GB 8715211D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- lensed
- photo detector
- photo
- detector
- lensed photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878715211A GB8715211D0 (en) | 1987-06-29 | 1987-06-29 | Lensed photo detector |
GB8811892A GB2206447B (en) | 1987-06-29 | 1988-05-19 | Lensed photodetector array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878715211A GB8715211D0 (en) | 1987-06-29 | 1987-06-29 | Lensed photo detector |
Publications (1)
Publication Number | Publication Date |
---|---|
GB8715211D0 true GB8715211D0 (en) | 1987-08-05 |
Family
ID=10619757
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB878715211A Pending GB8715211D0 (en) | 1987-06-29 | 1987-06-29 | Lensed photo detector |
GB8811892A Expired - Lifetime GB2206447B (en) | 1987-06-29 | 1988-05-19 | Lensed photodetector array |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8811892A Expired - Lifetime GB2206447B (en) | 1987-06-29 | 1988-05-19 | Lensed photodetector array |
Country Status (1)
Country | Link |
---|---|
GB (2) | GB8715211D0 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2248964A (en) * | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
GB2278723B (en) * | 1991-01-17 | 1995-04-26 | Honeywell Inc | Binary optical microlens detector array |
EP0510267A1 (en) * | 1991-04-24 | 1992-10-28 | Gec-Marconi Limited | Imaging array devices and staring array imaging systems |
GB9600469D0 (en) | 1996-01-10 | 1996-03-13 | Secr Defence | Three dimensional etching process |
FR2992471B1 (en) * | 2012-06-20 | 2015-05-15 | Commissariat Energie Atomique | SEMICONDUCTOR STRUCTURE COMPRISING AN ABSORBENT ZONE PLACED IN A FOCUSING CAVITY |
FR3021807B1 (en) | 2014-05-27 | 2017-09-29 | Commissariat A L Energie Atomique Et Aux Energies Alternatives | IMPROVED FTM MESA PHOTODIOD MATRIX MATRIX |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1489518A1 (en) * | 1965-07-07 | 1969-04-03 | Siemens Ag | Light-emitting diode and process for their manufacture |
DE1257965B (en) * | 1966-01-14 | 1968-01-04 | Siemens Ag | AIIIBA light emitting diode, especially based on GaAs, with high light yield |
-
1987
- 1987-06-29 GB GB878715211A patent/GB8715211D0/en active Pending
-
1988
- 1988-05-19 GB GB8811892A patent/GB2206447B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB8811892D0 (en) | 1988-06-22 |
GB2206447B (en) | 1991-05-01 |
GB2206447A (en) | 1989-01-05 |
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