JPS6410090B2 - - Google Patents

Info

Publication number
JPS6410090B2
JPS6410090B2 JP54069625A JP6962579A JPS6410090B2 JP S6410090 B2 JPS6410090 B2 JP S6410090B2 JP 54069625 A JP54069625 A JP 54069625A JP 6962579 A JP6962579 A JP 6962579A JP S6410090 B2 JPS6410090 B2 JP S6410090B2
Authority
JP
Japan
Prior art keywords
silicon
nitride film
implanted
nitrogen
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54069625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55162235A (en
Inventor
Yoichi Akasaka
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6962579A priority Critical patent/JPS55162235A/ja
Publication of JPS55162235A publication Critical patent/JPS55162235A/ja
Publication of JPS6410090B2 publication Critical patent/JPS6410090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)
JP6962579A 1979-06-01 1979-06-01 Forming nitride film Granted JPS55162235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Publications (2)

Publication Number Publication Date
JPS55162235A JPS55162235A (en) 1980-12-17
JPS6410090B2 true JPS6410090B2 (enExample) 1989-02-21

Family

ID=13408230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6962579A Granted JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Country Status (1)

Country Link
JP (1) JPS55162235A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628281B2 (ja) * 1983-11-02 1994-04-13 ソニー株式会社 半導体装置の製造方法
JPH07106512A (ja) * 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Also Published As

Publication number Publication date
JPS55162235A (en) 1980-12-17

Similar Documents

Publication Publication Date Title
JPS6217850B2 (enExample)
US20020064958A1 (en) Exposure method
JPH01187814A (ja) 薄膜半導体装置の製造方法
JP3238550B2 (ja) 構造体の欠陥修正方法
JPS6410090B2 (enExample)
JP3513124B2 (ja) 成膜方法
JPH0963974A (ja) 半導体基板中へのドーピング層の形成方法
Fogarassy et al. UV laser incorporation of dopants into silicon: Comparison of two processes
US5230970A (en) Method of forming metal regions
JP3081655B2 (ja) レジストパターンの形成方法
JPS59182529A (ja) 半導体層のパタ−ン形成方法
JPS6232616B2 (enExample)
JPH0153577B2 (enExample)
JPH02307221A (ja) Ｃｖｄ膜の成長方法
JPH1083947A (ja) レジストパターン形成方法およびその装置
JPS59208065A (ja) レ−ザ金属堆積方法
JPH0361335B2 (enExample)
JP2785551B2 (ja) エキシマレーザ光照射による熱処理方法
JPS60210835A (ja) 半導体装置の製造方法及びその製造装置
JP3332645B2 (ja) 多結晶半導体の製造方法
JPH073632Y2 (ja) レーザｃｖｄ装置
JPS60216556A (ja) 半導体装置の製造方法
JPH01211924A (ja) ウエハ表面の平坦化方法
JPS5954218A (ja) 半導体基板の製造方法
JPS6060725A (ja) パタ−ン形成方法