JPS55162235A - Forming nitride film - Google Patents

Forming nitride film

Info

Publication number
JPS55162235A
JPS55162235A JP6962579A JP6962579A JPS55162235A JP S55162235 A JPS55162235 A JP S55162235A JP 6962579 A JP6962579 A JP 6962579A JP 6962579 A JP6962579 A JP 6962579A JP S55162235 A JPS55162235 A JP S55162235A
Authority
JP
Japan
Prior art keywords
film
si3n4
laser beam
thickness
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6962579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6410090B2 (enExample
Inventor
Yoichi Akasaka
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6962579A priority Critical patent/JPS55162235A/ja
Publication of JPS55162235A publication Critical patent/JPS55162235A/ja
Publication of JPS6410090B2 publication Critical patent/JPS6410090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Formation Of Insulating Films (AREA)
JP6962579A 1979-06-01 1979-06-01 Forming nitride film Granted JPS55162235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6962579A JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Publications (2)

Publication Number Publication Date
JPS55162235A true JPS55162235A (en) 1980-12-17
JPS6410090B2 JPS6410090B2 (enExample) 1989-02-21

Family

ID=13408230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6962579A Granted JPS55162235A (en) 1979-06-01 1979-06-01 Forming nitride film

Country Status (1)

Country Link
JP (1) JPS55162235A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (ja) * 1983-11-02 1985-06-01 Sony Corp 半導体装置の製造方法
US5436175A (en) * 1993-10-04 1995-07-25 Sharp Microelectronics Technology, Inc. Shallow SIMOX processing method using molecular ion implantation
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6098640A (ja) * 1983-11-02 1985-06-01 Sony Corp 半導体装置の製造方法
US5436175A (en) * 1993-10-04 1995-07-25 Sharp Microelectronics Technology, Inc. Shallow SIMOX processing method using molecular ion implantation
US5589407A (en) * 1995-09-06 1996-12-31 Implanted Material Technology, Inc. Method of treating silicon to obtain thin, buried insulating layer

Also Published As

Publication number Publication date
JPS6410090B2 (enExample) 1989-02-21

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