JPS6232616B2 - - Google Patents

Info

Publication number
JPS6232616B2
JPS6232616B2 JP54058949A JP5894979A JPS6232616B2 JP S6232616 B2 JPS6232616 B2 JP S6232616B2 JP 54058949 A JP54058949 A JP 54058949A JP 5894979 A JP5894979 A JP 5894979A JP S6232616 B2 JPS6232616 B2 JP S6232616B2
Authority
JP
Japan
Prior art keywords
oxide film
laser
silicon
oxygen
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54058949A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55150236A (en
Inventor
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5894979A priority Critical patent/JPS55150236A/ja
Publication of JPS55150236A publication Critical patent/JPS55150236A/ja
Publication of JPS6232616B2 publication Critical patent/JPS6232616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
JP5894979A 1979-05-11 1979-05-11 Method of forming oxide film Granted JPS55150236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5894979A JPS55150236A (en) 1979-05-11 1979-05-11 Method of forming oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5894979A JPS55150236A (en) 1979-05-11 1979-05-11 Method of forming oxide film

Publications (2)

Publication Number Publication Date
JPS55150236A JPS55150236A (en) 1980-11-22
JPS6232616B2 true JPS6232616B2 (enExample) 1987-07-15

Family

ID=13099072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5894979A Granted JPS55150236A (en) 1979-05-11 1979-05-11 Method of forming oxide film

Country Status (1)

Country Link
JP (1) JPS55150236A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524468A (en) * 1978-08-11 1980-02-21 Toshiba Corp Manufacture of semiconductor

Also Published As

Publication number Publication date
JPS55150236A (en) 1980-11-22

Similar Documents

Publication Publication Date Title
JPH02323A (ja) 集積回路製造における非耐熱性金属のレーザー平坦化処理
JPS59169125A (ja) 半導体ウエハ−の加熱方法
US4659422A (en) Process for producing monocrystalline layer on insulator
US4443493A (en) Laser induced flow glass materials
JPS6392012A (ja) 積層物品およびその製造方法
US4549064A (en) Laser treatment of silicon nitride
US20050061235A1 (en) Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used therein
JPS61274314A (ja) レ−ザ−加熱タ−ゲツトからの蒸発増強方法
JP3669384B2 (ja) 半導体基板中へのドーピング層の形成方法
JPS5954217A (ja) 半導体基板の製造方法
US4431900A (en) Laser induced flow Ge-O based materials
JPS6232616B2 (enExample)
JPS6410090B2 (enExample)
Sugimura et al. Selective area deposition of silicon‐nitride and silicon‐oxide by laser chemical vapor deposition and fabrication of microlenses
Gleine et al. Laser trimming of SiON components for integrated optics
JPS621220A (ja) 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法
US4496608A (en) P-Glass reflow technique
JPS6151432B2 (enExample)
JP2851280B2 (ja) マイクロレンズおよびその製造方法
JPS628011B2 (enExample)
JPH02307221A (ja) Ｃｖｄ膜の成長方法
JPS5954218A (ja) 半導体基板の製造方法
JPH027422A (ja) レーザによる高温熱処理方法
JPS60216541A (ja) 半導体基板への不純物導入方法
JPS6092607A (ja) 電子ビ−ムアニ−ル装置