JPS55150236A - Method of forming oxide film - Google Patents
Method of forming oxide filmInfo
- Publication number
- JPS55150236A JPS55150236A JP5894979A JP5894979A JPS55150236A JP S55150236 A JPS55150236 A JP S55150236A JP 5894979 A JP5894979 A JP 5894979A JP 5894979 A JP5894979 A JP 5894979A JP S55150236 A JPS55150236 A JP S55150236A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- container
- wafer
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5894979A JPS55150236A (en) | 1979-05-11 | 1979-05-11 | Method of forming oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5894979A JPS55150236A (en) | 1979-05-11 | 1979-05-11 | Method of forming oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55150236A true JPS55150236A (en) | 1980-11-22 |
| JPS6232616B2 JPS6232616B2 (enExample) | 1987-07-15 |
Family
ID=13099072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5894979A Granted JPS55150236A (en) | 1979-05-11 | 1979-05-11 | Method of forming oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55150236A (enExample) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5524468A (en) * | 1978-08-11 | 1980-02-21 | Toshiba Corp | Manufacture of semiconductor |
-
1979
- 1979-05-11 JP JP5894979A patent/JPS55150236A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5524468A (en) * | 1978-08-11 | 1980-02-21 | Toshiba Corp | Manufacture of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6232616B2 (enExample) | 1987-07-15 |
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