NO317905B1 - Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art - Google Patents
Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art Download PDFInfo
- Publication number
- NO317905B1 NO317905B1 NO20024335A NO20024335A NO317905B1 NO 317905 B1 NO317905 B1 NO 317905B1 NO 20024335 A NO20024335 A NO 20024335A NO 20024335 A NO20024335 A NO 20024335A NO 317905 B1 NO317905 B1 NO 317905B1
- Authority
- NO
- Norway
- Prior art keywords
- memory
- temperature
- voltage
- electrodes
- determining
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000015654 memory Effects 0.000 claims abstract description 182
- 238000012937 correction Methods 0.000 claims abstract description 43
- 230000008859 change Effects 0.000 claims abstract description 31
- 230000036755 cellular response Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 60
- 230000001419 dependent effect Effects 0.000 claims description 30
- 230000010287 polarization Effects 0.000 claims description 27
- 230000004044 response Effects 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 11
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 230000006978 adaptation Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 description 23
- 230000005684 electric field Effects 0.000 description 11
- 230000007613 environmental effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000002789 length control Methods 0.000 description 5
- 230000000284 resting effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000010454 slate Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000010358 mechanical oscillation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Arrangements For Transmission Of Measured Signals (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20024335A NO317905B1 (no) | 2002-09-11 | 2002-09-11 | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
| CN03821549A CN100585730C (zh) | 2002-09-11 | 2003-09-10 | 用于操作铁电或驻极体存储器的方法及此类装置 |
| AT03748800T ATE365368T1 (de) | 2002-09-11 | 2003-09-10 | Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art |
| JP2004535291A JP4708026B2 (ja) | 2002-09-11 | 2003-09-10 | 強誘電体又はエレクトレット・メモリ・デバイスを作動する方法及び装置 |
| CA002496670A CA2496670A1 (en) | 2002-09-11 | 2003-09-10 | A method for operating a ferroelectric or electret memory device, and a device of this kind |
| DE60314531T DE60314531T2 (de) | 2002-09-11 | 2003-09-10 | Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art |
| KR1020057004275A KR100710931B1 (ko) | 2002-09-11 | 2003-09-10 | 강유전성 또는 일렉트릿 메모리 소자 및 그 작동 방법 |
| PCT/NO2003/000312 WO2004025658A1 (en) | 2002-09-11 | 2003-09-10 | A method for operating a ferroelectric or electret memory device, and a device of this kind |
| RU2005109910/09A RU2297051C2 (ru) | 2002-09-11 | 2003-09-10 | Фотоэлектрическое или электретное запоминающее устройство и способ управления подобным устройством |
| EP03748800A EP1547091B1 (en) | 2002-09-11 | 2003-09-10 | A method for operating a ferroelectric or electret memory device, and a device of this kind |
| AU2003267867A AU2003267867A1 (en) | 2002-09-11 | 2003-09-10 | A method for operating a ferroelectric or electret memory device, and a device of this kind |
| US10/659,428 US6937500B2 (en) | 2002-09-11 | 2003-09-11 | Method for operating a ferroelectric of electret memory device, and a device of this kind |
| JP2008156826A JP2008234832A (ja) | 2002-09-11 | 2008-06-16 | 強誘電体又はエレクトレット・メモリ・デバイスを作動する方法及びこの種の装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20024335A NO317905B1 (no) | 2002-09-11 | 2002-09-11 | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO20024335D0 NO20024335D0 (no) | 2002-09-11 |
| NO317905B1 true NO317905B1 (no) | 2004-12-27 |
Family
ID=19913985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20024335A NO317905B1 (no) | 2002-09-11 | 2002-09-11 | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US6937500B2 (ja) |
| EP (1) | EP1547091B1 (ja) |
| JP (2) | JP4708026B2 (ja) |
| KR (1) | KR100710931B1 (ja) |
| CN (1) | CN100585730C (ja) |
| AT (1) | ATE365368T1 (ja) |
| AU (1) | AU2003267867A1 (ja) |
| CA (1) | CA2496670A1 (ja) |
| DE (1) | DE60314531T2 (ja) |
| NO (1) | NO317905B1 (ja) |
| RU (1) | RU2297051C2 (ja) |
| WO (1) | WO2004025658A1 (ja) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO317905B1 (no) * | 2002-09-11 | 2004-12-27 | Thin Film Electronics Asa | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
| US6922350B2 (en) * | 2002-09-27 | 2005-07-26 | Intel Corporation | Reducing the effect of write disturbs in polymer memories |
| JP4249573B2 (ja) * | 2003-09-03 | 2009-04-02 | パイオニア株式会社 | 位置認識構造を有する記録媒体、位置認識装置および位置認識方法 |
| JP2005085332A (ja) * | 2003-09-05 | 2005-03-31 | Seiko Epson Corp | 強誘電体記憶装置、その駆動方法及び駆動回路 |
| US7233880B2 (en) * | 2003-09-11 | 2007-06-19 | Intel Corporation | Adaptive cache algorithm for temperature sensitive memory |
| NO324607B1 (no) * | 2003-11-24 | 2007-11-26 | Thin Film Electronics Asa | Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering |
| US20050146923A1 (en) * | 2003-12-24 | 2005-07-07 | Diana Daniel C. | Polymer/metal interface with multilayered diffusion barrier |
| NO320149B1 (no) * | 2004-02-13 | 2005-10-31 | Thin Film Electronics Asa | Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning |
| US7222052B2 (en) * | 2004-06-25 | 2007-05-22 | Intel Corporation | Temperature adaptive ferro-electric memory access parameters |
| NO20042771D0 (no) | 2004-06-30 | 2004-06-30 | Thin Film Electronics Asa | Optimering av driftstemperatur i et ferroelektrisk eller elektret minne |
| US7215565B2 (en) * | 2005-01-04 | 2007-05-08 | Thin Film Electronics Asa | Method for operating a passive matrix-addressable ferroelectric or electret memory device |
| US7164289B1 (en) | 2005-01-21 | 2007-01-16 | Altera Corporation | Real time feedback compensation of programmable logic memory |
| JP4511377B2 (ja) * | 2005-01-28 | 2010-07-28 | パナソニック株式会社 | 強誘電体記憶装置 |
| JP4143094B2 (ja) * | 2006-03-07 | 2008-09-03 | 株式会社東芝 | 強誘電体記憶装置 |
| US7405964B2 (en) * | 2006-07-27 | 2008-07-29 | Qimonda North America Corp. | Integrated circuit to identify read disturb condition in memory cell |
| JP2008071440A (ja) * | 2006-09-14 | 2008-03-27 | Matsushita Electric Ind Co Ltd | 強誘電体メモリ装置及びその制御方法 |
| US7961493B2 (en) * | 2008-06-06 | 2011-06-14 | International Business Machines Corporation | Programmable device |
| CN101814313B (zh) * | 2010-04-02 | 2013-07-03 | 清华大学 | 单管单电容型铁电存储器 |
| DE102012102326B4 (de) * | 2012-03-20 | 2024-10-10 | Helmholtz-Zentrum Dresden - Rossendorf E. V. | Verfahren zur Herstellung eines integrierten nichtflüchtigen Analogspeichers |
| WO2013017131A2 (de) | 2011-07-12 | 2013-02-07 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Integrierte nichtflüchtige speicherelemente, aufbau und verwendung |
| US9064563B2 (en) * | 2013-02-08 | 2015-06-23 | Seagate Technology Llc | Optimization of variable resistance memory cells |
| US9886571B2 (en) | 2016-02-16 | 2018-02-06 | Xerox Corporation | Security enhancement of customer replaceable unit monitor (CRUM) |
| US10528099B2 (en) | 2016-10-10 | 2020-01-07 | Micron Technology, Inc. | Configuration update for a memory device based on a temperature of the memory device |
| US9977627B1 (en) * | 2016-11-09 | 2018-05-22 | Macronix International Co., Ltd. | Memory device and memory controlling method |
| US10978169B2 (en) | 2017-03-17 | 2021-04-13 | Xerox Corporation | Pad detection through pattern analysis |
| US10410721B2 (en) * | 2017-11-22 | 2019-09-10 | Micron Technology, Inc. | Pulsed integrator and memory techniques |
| JP7106634B2 (ja) * | 2018-03-06 | 2022-07-26 | 株式会社日立ハイテク | イオン濃度測定装置 |
| US10497521B1 (en) | 2018-10-29 | 2019-12-03 | Xerox Corporation | Roller electric contact |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US60923A (en) * | 1867-01-01 | Frederick h | ||
| US24837A (en) * | 1859-07-19 | 1859-07-19 | Fastening fob | |
| JPH0677434A (ja) * | 1992-08-27 | 1994-03-18 | Hitachi Ltd | 半導体記憶装置 |
| JP3355595B2 (ja) * | 1996-03-25 | 2002-12-09 | シャープ株式会社 | 不揮発性半導体記憶装置 |
| JP3822286B2 (ja) * | 1996-09-10 | 2006-09-13 | 松下電器産業株式会社 | 半導体メモリ装置 |
| WO1999000798A1 (fr) * | 1997-06-27 | 1999-01-07 | Matsushita Electronics Corporation | Dispositif a memoire ferroelectrique et son procede de commande |
| US6392916B1 (en) * | 1999-10-01 | 2002-05-21 | Samsung Electronics Co., Ltd. | Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device |
| JP3768055B2 (ja) * | 2000-01-21 | 2006-04-19 | シャープ株式会社 | 強誘電体型記憶装置 |
| JP2001351373A (ja) * | 2000-06-07 | 2001-12-21 | Matsushita Electric Ind Co Ltd | 半導体記憶装置およびそれを用いた半導体集積装置 |
| NO312699B1 (no) * | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Adressering av minnematrise |
| NO312698B1 (no) * | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten |
| JP2002184170A (ja) * | 2000-12-12 | 2002-06-28 | Sony Corp | 強誘電体型不揮発性半導体メモリ、及び、印加電圧パルス幅制御回路 |
| JP2002313076A (ja) * | 2001-04-17 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 強誘電体メモリデバイス |
| NO317905B1 (no) * | 2002-09-11 | 2004-12-27 | Thin Film Electronics Asa | Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art |
-
2002
- 2002-09-11 NO NO20024335A patent/NO317905B1/no unknown
-
2003
- 2003-09-10 RU RU2005109910/09A patent/RU2297051C2/ru not_active IP Right Cessation
- 2003-09-10 KR KR1020057004275A patent/KR100710931B1/ko not_active IP Right Cessation
- 2003-09-10 CN CN03821549A patent/CN100585730C/zh not_active Expired - Fee Related
- 2003-09-10 JP JP2004535291A patent/JP4708026B2/ja not_active Expired - Fee Related
- 2003-09-10 DE DE60314531T patent/DE60314531T2/de not_active Expired - Lifetime
- 2003-09-10 AU AU2003267867A patent/AU2003267867A1/en not_active Abandoned
- 2003-09-10 AT AT03748800T patent/ATE365368T1/de not_active IP Right Cessation
- 2003-09-10 WO PCT/NO2003/000312 patent/WO2004025658A1/en active IP Right Grant
- 2003-09-10 EP EP03748800A patent/EP1547091B1/en not_active Expired - Lifetime
- 2003-09-10 CA CA002496670A patent/CA2496670A1/en not_active Abandoned
- 2003-09-11 US US10/659,428 patent/US6937500B2/en not_active Expired - Lifetime
-
2008
- 2008-06-16 JP JP2008156826A patent/JP2008234832A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003267867A1 (en) | 2004-04-30 |
| JP2008234832A (ja) | 2008-10-02 |
| RU2297051C2 (ru) | 2007-04-10 |
| CN100585730C (zh) | 2010-01-27 |
| RU2005109910A (ru) | 2005-10-10 |
| ATE365368T1 (de) | 2007-07-15 |
| EP1547091A1 (en) | 2005-06-29 |
| KR20050044919A (ko) | 2005-05-13 |
| CN1682312A (zh) | 2005-10-12 |
| WO2004025658A1 (en) | 2004-03-25 |
| NO20024335D0 (no) | 2002-09-11 |
| US6937500B2 (en) | 2005-08-30 |
| DE60314531T2 (de) | 2008-02-28 |
| EP1547091B1 (en) | 2007-06-20 |
| JP2006512697A (ja) | 2006-04-13 |
| CA2496670A1 (en) | 2004-03-25 |
| JP4708026B2 (ja) | 2011-06-22 |
| KR100710931B1 (ko) | 2007-04-23 |
| US20050073869A1 (en) | 2005-04-07 |
| DE60314531D1 (de) | 2007-08-02 |
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