ATE365368T1 - Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art - Google Patents

Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art

Info

Publication number
ATE365368T1
ATE365368T1 AT03748800T AT03748800T ATE365368T1 AT E365368 T1 ATE365368 T1 AT E365368T1 AT 03748800 T AT03748800 T AT 03748800T AT 03748800 T AT03748800 T AT 03748800T AT E365368 T1 ATE365368 T1 AT E365368T1
Authority
AT
Austria
Prior art keywords
component
determining
memory device
memory
operating
Prior art date
Application number
AT03748800T
Other languages
English (en)
Inventor
Hans Gudesen
Per-Erik Nordal
Geirr Leistad
Per Broems
Per Sandstroem
Mats Johansson
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of ATE365368T1 publication Critical patent/ATE365368T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
AT03748800T 2002-09-11 2003-09-10 Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art ATE365368T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20024335A NO317905B1 (no) 2002-09-11 2002-09-11 Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art

Publications (1)

Publication Number Publication Date
ATE365368T1 true ATE365368T1 (de) 2007-07-15

Family

ID=19913985

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03748800T ATE365368T1 (de) 2002-09-11 2003-09-10 Verfahren zum betrieb eines ferroelektrischen oder elektret- speicherbausteins und baustein dieser art

Country Status (12)

Country Link
US (1) US6937500B2 (de)
EP (1) EP1547091B1 (de)
JP (2) JP4708026B2 (de)
KR (1) KR100710931B1 (de)
CN (1) CN100585730C (de)
AT (1) ATE365368T1 (de)
AU (1) AU2003267867A1 (de)
CA (1) CA2496670A1 (de)
DE (1) DE60314531T2 (de)
NO (1) NO317905B1 (de)
RU (1) RU2297051C2 (de)
WO (1) WO2004025658A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO317905B1 (no) * 2002-09-11 2004-12-27 Thin Film Electronics Asa Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art
US6922350B2 (en) * 2002-09-27 2005-07-26 Intel Corporation Reducing the effect of write disturbs in polymer memories
JP4249573B2 (ja) * 2003-09-03 2009-04-02 パイオニア株式会社 位置認識構造を有する記録媒体、位置認識装置および位置認識方法
JP2005085332A (ja) * 2003-09-05 2005-03-31 Seiko Epson Corp 強誘電体記憶装置、その駆動方法及び駆動回路
US7233880B2 (en) * 2003-09-11 2007-06-19 Intel Corporation Adaptive cache algorithm for temperature sensitive memory
NO324607B1 (no) * 2003-11-24 2007-11-26 Thin Film Electronics Asa Fremgangsmate for a betjene et datalagringsapparat som benytter passiv matriseadressering
US20050146923A1 (en) * 2003-12-24 2005-07-07 Diana Daniel C. Polymer/metal interface with multilayered diffusion barrier
NO320149B1 (no) * 2004-02-13 2005-10-31 Thin Film Electronics Asa Fremgangsmate for a drive en ferroelektrisk eller elektret minneinnretning
US7222052B2 (en) * 2004-06-25 2007-05-22 Intel Corporation Temperature adaptive ferro-electric memory access parameters
NO20042771D0 (no) 2004-06-30 2004-06-30 Thin Film Electronics Asa Optimering av driftstemperatur i et ferroelektrisk eller elektret minne
US7215565B2 (en) * 2005-01-04 2007-05-08 Thin Film Electronics Asa Method for operating a passive matrix-addressable ferroelectric or electret memory device
US7164289B1 (en) * 2005-01-21 2007-01-16 Altera Corporation Real time feedback compensation of programmable logic memory
JP4511377B2 (ja) * 2005-01-28 2010-07-28 パナソニック株式会社 強誘電体記憶装置
JP4143094B2 (ja) * 2006-03-07 2008-09-03 株式会社東芝 強誘電体記憶装置
US7405964B2 (en) * 2006-07-27 2008-07-29 Qimonda North America Corp. Integrated circuit to identify read disturb condition in memory cell
JP2008071440A (ja) * 2006-09-14 2008-03-27 Matsushita Electric Ind Co Ltd 強誘電体メモリ装置及びその制御方法
US7961493B2 (en) * 2008-06-06 2011-06-14 International Business Machines Corporation Programmable device
CN101814313B (zh) * 2010-04-02 2013-07-03 清华大学 单管单电容型铁电存储器
WO2013017131A2 (de) 2011-07-12 2013-02-07 Helmholtz-Zentrum Dresden - Rossendorf E.V. Integrierte nichtflüchtige speicherelemente, aufbau und verwendung
DE102012102326A1 (de) * 2012-03-20 2013-09-26 Helmholtz-Zentrum Dresden - Rossendorf E.V. Integrierter nichtflüchtiger Analogspeicher
US9064563B2 (en) * 2013-02-08 2015-06-23 Seagate Technology Llc Optimization of variable resistance memory cells
US9886571B2 (en) 2016-02-16 2018-02-06 Xerox Corporation Security enhancement of customer replaceable unit monitor (CRUM)
US10528099B2 (en) * 2016-10-10 2020-01-07 Micron Technology, Inc. Configuration update for a memory device based on a temperature of the memory device
US9977627B1 (en) * 2016-11-09 2018-05-22 Macronix International Co., Ltd. Memory device and memory controlling method
US10978169B2 (en) 2017-03-17 2021-04-13 Xerox Corporation Pad detection through pattern analysis
US10410721B2 (en) * 2017-11-22 2019-09-10 Micron Technology, Inc. Pulsed integrator and memory techniques
WO2019171852A1 (ja) * 2018-03-06 2019-09-12 株式会社日立ハイテクノロジーズ イオン濃度測定装置
US10497521B1 (en) 2018-10-29 2019-12-03 Xerox Corporation Roller electric contact

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US60923A (en) * 1867-01-01 Frederick h
US24837A (en) * 1859-07-19 1859-07-19 Fastening fob
JPH0677434A (ja) * 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JP3355595B2 (ja) * 1996-03-25 2002-12-09 シャープ株式会社 不揮発性半導体記憶装置
JP3822286B2 (ja) * 1996-09-10 2006-09-13 松下電器産業株式会社 半導体メモリ装置
WO1999000798A1 (fr) * 1997-06-27 1999-01-07 Matsushita Electronics Corporation Dispositif a memoire ferroelectrique et son procede de commande
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
JP3768055B2 (ja) * 2000-01-21 2006-04-19 シャープ株式会社 強誘電体型記憶装置
JP2001351373A (ja) * 2000-06-07 2001-12-21 Matsushita Electric Ind Co Ltd 半導体記憶装置およびそれを用いた半導体集積装置
NO312699B1 (no) 2000-07-07 2002-06-17 Thin Film Electronics Asa Adressering av minnematrise
NO312698B1 (no) 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
JP2002184170A (ja) * 2000-12-12 2002-06-28 Sony Corp 強誘電体型不揮発性半導体メモリ、及び、印加電圧パルス幅制御回路
JP2002313076A (ja) * 2001-04-17 2002-10-25 Matsushita Electric Ind Co Ltd 強誘電体メモリデバイス
NO317905B1 (no) * 2002-09-11 2004-12-27 Thin Film Electronics Asa Fremgangsmate for a operere ferroelektrisk eller elektret minneinnretning og en innretning av denne art

Also Published As

Publication number Publication date
DE60314531D1 (de) 2007-08-02
EP1547091A1 (de) 2005-06-29
RU2005109910A (ru) 2005-10-10
DE60314531T2 (de) 2008-02-28
AU2003267867A1 (en) 2004-04-30
JP2006512697A (ja) 2006-04-13
US6937500B2 (en) 2005-08-30
JP2008234832A (ja) 2008-10-02
CN100585730C (zh) 2010-01-27
EP1547091B1 (de) 2007-06-20
KR100710931B1 (ko) 2007-04-23
US20050073869A1 (en) 2005-04-07
KR20050044919A (ko) 2005-05-13
NO20024335D0 (no) 2002-09-11
RU2297051C2 (ru) 2007-04-10
WO2004025658A1 (en) 2004-03-25
CA2496670A1 (en) 2004-03-25
NO317905B1 (no) 2004-12-27
JP4708026B2 (ja) 2011-06-22
CN1682312A (zh) 2005-10-12

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