NO172716C - Delefilm for understoettelse av halvlederskiver, samt fremgangsmaate for fremstilling av enkelte brikker fra en halvlederskive - Google Patents

Delefilm for understoettelse av halvlederskiver, samt fremgangsmaate for fremstilling av enkelte brikker fra en halvlederskive

Info

Publication number
NO172716C
NO172716C NO843113A NO843113A NO172716C NO 172716 C NO172716 C NO 172716C NO 843113 A NO843113 A NO 843113A NO 843113 A NO843113 A NO 843113A NO 172716 C NO172716 C NO 172716C
Authority
NO
Norway
Prior art keywords
semiconductor
particulars
patches
procedure
manufacture
Prior art date
Application number
NO843113A
Other languages
English (en)
Other versions
NO172716B (no
NO843113L (no
Inventor
Joseph Anthony Aurichio
Original Assignee
Nat Starch Chem Invest
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Starch Chem Invest filed Critical Nat Starch Chem Invest
Publication of NO843113L publication Critical patent/NO843113L/no
Publication of NO172716B publication Critical patent/NO172716B/no
Publication of NO172716C publication Critical patent/NO172716C/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0052—Means for supporting or holding work during breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laminated Bodies (AREA)
  • Holding Or Fastening Of Disk On Rotational Shaft (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Die Bonding (AREA)
NO843113A 1983-08-03 1984-08-02 Delefilm for understoettelse av halvlederskiver, samt fremgangsmaate for fremstilling av enkelte brikker fra en halvlederskive NO172716C (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51993683A 1983-08-03 1983-08-03

Publications (3)

Publication Number Publication Date
NO843113L NO843113L (no) 1985-02-04
NO172716B NO172716B (no) 1993-05-18
NO172716C true NO172716C (no) 1993-08-25

Family

ID=24070468

Family Applications (1)

Application Number Title Priority Date Filing Date
NO843113A NO172716C (no) 1983-08-03 1984-08-02 Delefilm for understoettelse av halvlederskiver, samt fremgangsmaate for fremstilling av enkelte brikker fra en halvlederskive

Country Status (15)

Country Link
EP (1) EP0134606B1 (no)
JP (1) JPS6057642A (no)
KR (1) KR920006894B1 (no)
AU (1) AU559159B2 (no)
BR (1) BR8403579A (no)
CA (1) CA1244294A (no)
DE (1) DE3477311D1 (no)
HK (1) HK62789A (no)
IE (1) IE55238B1 (no)
IL (1) IL72141A (no)
MY (1) MY100982A (no)
NO (1) NO172716C (no)
NZ (1) NZ209093A (no)
PH (1) PH23587A (no)
SG (1) SG35489G (no)

Families Citing this family (40)

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US5049434A (en) * 1984-04-30 1991-09-17 National Starch And Chemical Investment Holding Corporation Pre-patterned device substrate device-attach adhesive transfer system
KR900001236B1 (ko) * 1984-05-29 1990-03-05 미쓰이도오아쓰 가가꾸 가부시끼가이샤 웨이퍼 가공용필름
US4687693A (en) * 1985-06-13 1987-08-18 Stauffer Chemical Company Adhesively mountable die attach film
JPH0691057B2 (ja) * 1985-09-07 1994-11-14 日東電工株式会社 半導体ウエハの保護部材
EP0252739B1 (en) * 1986-07-09 1993-10-06 LINTEC Corporation Adhesive sheets for sticking wafers thereto
US5030308A (en) * 1986-07-14 1991-07-09 National Starch And Chemical Investment Holding Corporation Method of bonding a semiconductor chip to a substrate
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
JPH01143211A (ja) * 1987-11-27 1989-06-05 Takatori Haitetsuku:Kk ウエハーに対する保護テープの貼付け切り抜き方法および装置
JPH05179211A (ja) * 1991-12-30 1993-07-20 Nitto Denko Corp ダイシング・ダイボンドフイルム
WO1994024704A1 (en) * 1993-04-12 1994-10-27 Bolger Justin C Area bonding conductive adhesive preforms
KR200174655Y1 (ko) * 1994-04-30 2000-03-02 유무성 반도체 일반 및 LOC(Lead On Chip) 리드프레임의 테이핑장치
JP4230080B2 (ja) 2000-02-18 2009-02-25 リンテック株式会社 ウエハ貼着用粘着シート
FR2815468B1 (fr) * 2000-10-12 2003-10-03 Gemplus Card Int Procede pour le report de microcircuit sur un support
FR2831148B1 (fr) 2001-10-22 2004-01-02 Gemplus Card Int Procede et dispositif de manipulation d'un wafer
US6620651B2 (en) * 2001-10-23 2003-09-16 National Starch And Chemical Investment Holding Corporation Adhesive wafers for die attach application
JP4107417B2 (ja) 2002-10-15 2008-06-25 日東電工株式会社 チップ状ワークの固定方法
JP4283596B2 (ja) 2003-05-29 2009-06-24 日東電工株式会社 チップ状ワークの固定方法
JP4536367B2 (ja) * 2003-12-24 2010-09-01 東レ・ダウコーニング株式会社 ダイシングダイボンディング用シート及びその製造方法
JP4275522B2 (ja) 2003-12-26 2009-06-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4443962B2 (ja) 2004-03-17 2010-03-31 日東電工株式会社 ダイシング・ダイボンドフィルム
US20100019365A1 (en) 2006-09-12 2010-01-28 Nitto Denko Corporation Dicing/die bonding film
JP4430085B2 (ja) 2007-03-01 2010-03-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4717052B2 (ja) 2007-11-08 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4717051B2 (ja) 2007-11-08 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4717085B2 (ja) 2008-01-18 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4717086B2 (ja) 2008-01-18 2011-07-06 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4553400B2 (ja) 2008-02-18 2010-09-29 日東電工株式会社 ダイシング・ダイボンドフィルム
JP2010056544A (ja) 2008-08-01 2010-03-11 Nitto Denko Corp ダイシング・ダイボンドフィルム
EP2151858A2 (en) 2008-08-04 2010-02-10 Nitto Denko Corporation Dicing die-bonding film
EP2151857A2 (en) 2008-08-04 2010-02-10 Nitto Denko Corporation Dicing die-bonding film
EP2151860A2 (en) 2008-08-04 2010-02-10 Nitto Denko Corporation Dicing die-bonding film
JP5519971B2 (ja) 2008-11-26 2014-06-11 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体装置の製造方法
JP2012079936A (ja) 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
JP5023225B1 (ja) 2011-03-10 2012-09-12 日東電工株式会社 半導体装置用フィルムの製造方法
JP5398083B2 (ja) 2011-03-11 2014-01-29 日東電工株式会社 ダイボンドフィルム及びその用途
JP5036887B1 (ja) 2011-03-11 2012-09-26 日東電工株式会社 保護フィルム付きダイシングフィルム
JP5930625B2 (ja) * 2011-08-03 2016-06-08 日東電工株式会社 ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置
JP5976326B2 (ja) 2012-01-25 2016-08-23 日東電工株式会社 半導体装置の製造方法、及び、当該半導体装置の製造方法に用いられる接着フィルム
JP6193663B2 (ja) 2013-07-26 2017-09-06 日東電工株式会社 ダイシングテープ付きダイボンドフィルム、及び、半導体装置の製造方法
KR102675134B1 (ko) * 2020-03-31 2024-06-12 동우 화인켐 주식회사 도전성 필름 적층체 및 이의 제조 방법

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DE1061014B (de) * 1957-07-03 1959-07-09 Minnesota Mining & Mfg Klebkraeftige Klebfolie oder Klebband, insbesondere mit einem biegsamen Traeger aus einem nichtfaserigen Film mit einer klebrigen Vorderseite und einem Rueckseitenaufstrich niederer Adhaesion
FR1484458A (no) * 1965-06-25 1967-09-15
US3579105A (en) * 1969-03-03 1971-05-18 Perkin Elmer Corp Digital readout system having an automatic zero-setting circuit
US4285433A (en) * 1979-12-19 1981-08-25 Western Electric Co., Inc. Method and apparatus for removing dice from a severed wafer
JPS5695974A (en) * 1979-12-28 1981-08-03 Shin Etsu Chem Co Ltd Releasable silicone type adhesive base
JPS6048104B2 (ja) * 1980-01-30 1985-10-25 三洋電機株式会社 半導体ウエハの分割方法
JPS56126937A (en) * 1980-03-11 1981-10-05 Toshiba Corp Cutting apparatus for semiconductor wafer
JPS57145339A (en) * 1981-03-04 1982-09-08 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS5815248A (ja) * 1981-07-20 1983-01-28 Nec Corp 半導体素子の製造方法
JPS59930A (ja) * 1982-06-25 1984-01-06 Mitsubishi Electric Corp 半導体素子のマウント方法
JPS596551A (ja) * 1982-07-05 1984-01-13 Nec Corp 半導体素子のダイボンデイング方法
JPS5957438A (ja) * 1982-09-27 1984-04-03 Toshiba Corp 半導体装置の組立方法
AU565919B2 (en) * 1983-06-13 1987-10-01 Minnesota Mining And Manufacturing Company Electrically and thermally conductive adhesive transfer tape

Also Published As

Publication number Publication date
IL72141A (en) 1988-02-29
CA1244294A (en) 1988-11-08
BR8403579A (pt) 1985-06-25
NO172716B (no) 1993-05-18
JPS6057642A (ja) 1985-04-03
AU3120084A (en) 1985-02-07
KR920006894B1 (ko) 1992-08-21
NZ209093A (en) 1986-10-08
EP0134606A3 (en) 1985-11-27
MY100982A (en) 1991-06-15
KR850002170A (ko) 1985-05-06
IE55238B1 (en) 1990-07-04
NO843113L (no) 1985-02-04
EP0134606A2 (en) 1985-03-20
DE3477311D1 (en) 1989-04-20
AU559159B2 (en) 1987-02-26
HK62789A (en) 1989-08-11
SG35489G (en) 1989-10-13
IE841466L (en) 1985-02-03
EP0134606B1 (en) 1989-03-15
IL72141A0 (en) 1984-10-31
PH23587A (en) 1989-09-11

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