NL8501720A - Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. Download PDFInfo
- Publication number
- NL8501720A NL8501720A NL8501720A NL8501720A NL8501720A NL 8501720 A NL8501720 A NL 8501720A NL 8501720 A NL8501720 A NL 8501720A NL 8501720 A NL8501720 A NL 8501720A NL 8501720 A NL8501720 A NL 8501720A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- field oxide
- heat treatment
- silicon
- oxidation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229920001296 polysiloxane Polymers 0.000 title 1
- 239000010410 layer Substances 0.000 claims description 63
- 230000003647 oxidation Effects 0.000 claims description 59
- 238000007254 oxidation reaction Methods 0.000 claims description 59
- 238000010438 heat treatment Methods 0.000 claims description 30
- 230000001590 oxidative effect Effects 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 206010047700 Vomiting Diseases 0.000 claims 1
- 230000008673 vomiting Effects 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8501720A NL8501720A (nl) | 1985-06-14 | 1985-06-14 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. |
US06/869,482 US4743566A (en) | 1985-06-14 | 1986-06-02 | Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper |
CA000511260A CA1269593A (en) | 1985-06-14 | 1986-06-10 | Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper |
EP86201016A EP0208356B1 (en) | 1985-06-14 | 1986-06-11 | Method of manufacturing a semiconductor device, in which a silicon slice is locally provided with field oxide with a channel stopper |
IE1550/86A IE57557B1 (en) | 1985-06-14 | 1986-06-11 | Method of manufacturing a semiconductor device,in which a silicon slice is locally provided with field oxide with a channel stopper |
DE8686201016T DE3668396D1 (de) | 1985-06-14 | 1986-06-11 | Verfahren zur herstellung einer halbleiteranordnung mit einem halbleiterkoerper mit feldoxid und kanalunterbrecher. |
JP61135111A JPH07118504B2 (ja) | 1985-06-14 | 1986-06-12 | 半導体デバイスの製造法 |
KR1019860004697A KR950001151B1 (ko) | 1985-06-14 | 1986-06-13 | 반도체 장치 제조방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8501720 | 1985-06-14 | ||
NL8501720A NL8501720A (nl) | 1985-06-14 | 1985-06-14 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8501720A true NL8501720A (nl) | 1987-01-02 |
Family
ID=19846146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8501720A NL8501720A (nl) | 1985-06-14 | 1985-06-14 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak plaatselijk wordt voorzien van veldoxide met kanaalonderbreker. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4743566A (ja) |
EP (1) | EP0208356B1 (ja) |
JP (1) | JPH07118504B2 (ja) |
KR (1) | KR950001151B1 (ja) |
CA (1) | CA1269593A (ja) |
DE (1) | DE3668396D1 (ja) |
IE (1) | IE57557B1 (ja) |
NL (1) | NL8501720A (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8603111A (nl) * | 1986-12-08 | 1988-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een siliciumplak aan zijn oppervlak wordt voorzien van veldoxidegebieden. |
US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
JP2545527B2 (ja) * | 1987-01-23 | 1996-10-23 | 沖電気工業株式会社 | 半導体装置 |
NL8700541A (nl) * | 1987-03-06 | 1988-10-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een plak silicium plaatselijk wordt voorzien van veldoxidegebieden. |
JP2573218B2 (ja) * | 1987-04-17 | 1997-01-22 | シチズン時計株式会社 | 不揮発性記憶素子の製造方法 |
US4942449A (en) * | 1988-03-28 | 1990-07-17 | General Electric Company | Fabrication method and structure for field isolation in field effect transistors on integrated circuit chips |
NL8800903A (nl) * | 1988-04-08 | 1989-11-01 | Koninkl Philips Electronics Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumsubstraat met geheel of gedeeltelijk verzonken veldoxide-gebieden. |
GB2238658B (en) * | 1989-11-23 | 1993-02-17 | Stc Plc | Improvements in integrated circuits |
US5049520A (en) * | 1990-06-06 | 1991-09-17 | Micron Technology, Inc. | Method of partially eliminating the bird's beak effect without adding any process steps |
JPH04247663A (ja) * | 1991-02-04 | 1992-09-03 | Mitsubishi Electric Corp | 電界効果素子およびその製造方法 |
US5132241A (en) * | 1991-04-15 | 1992-07-21 | Industrial Technology Research Institute | Method of manufacturing minimum counterdoping in twin well process |
US5134089A (en) * | 1991-09-30 | 1992-07-28 | Motorola, Inc. | MOS transistor isolation method |
US5348910A (en) * | 1991-12-24 | 1994-09-20 | Seiko Epson Corporation | Method of manufacturing a semiconductor device and the product thereby |
US5254495A (en) * | 1993-05-07 | 1993-10-19 | United Microelectronics Corporation | Salicide recessed local oxidation of silicon |
JP2626513B2 (ja) * | 1993-10-07 | 1997-07-02 | 日本電気株式会社 | 半導体装置の製造方法 |
US5672539A (en) * | 1994-01-14 | 1997-09-30 | Micron Technology, Inc. | Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering |
US5374585A (en) * | 1994-05-09 | 1994-12-20 | Motorola, Inc. | Process for forming field isolation |
GB2291261B (en) * | 1994-07-06 | 1999-03-24 | Hyundai Electronics Ind | Method of forming a field oxide film in a semiconductor device |
FR2734403B1 (fr) | 1995-05-19 | 1997-08-01 | Sgs Thomson Microelectronics | Isolement plan dans des circuits integres |
KR100197656B1 (ko) * | 1995-12-29 | 1999-07-01 | 김영환 | 반도체 에스.오.아이.소자의 제조방법 |
US5861339A (en) * | 1995-10-27 | 1999-01-19 | Integrated Device Technology, Inc. | Recessed isolation with double oxidation |
US5672538A (en) * | 1995-12-04 | 1997-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd | Modified locus isolation process in which surface topology of the locos oxide is smoothed |
US5714414A (en) * | 1996-08-19 | 1998-02-03 | Micron Technology, Inc. | Semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate |
US5882993A (en) | 1996-08-19 | 1999-03-16 | Advanced Micro Devices, Inc. | Integrated circuit with differing gate oxide thickness and process for making same |
US6033943A (en) * | 1996-08-23 | 2000-03-07 | Advanced Micro Devices, Inc. | Dual gate oxide thickness integrated circuit and process for making same |
US5962914A (en) * | 1998-01-14 | 1999-10-05 | Advanced Micro Devices, Inc. | Reduced bird's beak field oxidation process using nitrogen implanted into active region |
US6531364B1 (en) | 1998-08-05 | 2003-03-11 | Advanced Micro Devices, Inc. | Advanced fabrication technique to form ultra thin gate dielectric using a sacrificial polysilicon seed layer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5286083A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
JPS5529116A (en) * | 1978-08-23 | 1980-03-01 | Hitachi Ltd | Manufacture of complementary misic |
JPS5821842A (ja) * | 1981-07-30 | 1983-02-08 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 分離領域の形成方法 |
US4574465A (en) * | 1982-04-13 | 1986-03-11 | Texas Instruments Incorporated | Differing field oxide thicknesses in dynamic memory device |
JPS5984436A (ja) * | 1982-11-04 | 1984-05-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US4407696A (en) * | 1982-12-27 | 1983-10-04 | Mostek Corporation | Fabrication of isolation oxidation for MOS circuit |
JPS59171138A (ja) * | 1983-03-17 | 1984-09-27 | Nec Corp | 半導体装置の製造方法 |
JPS60106142A (ja) * | 1983-11-15 | 1985-06-11 | Nec Corp | 半導体素子の製造方法 |
JPS60128635A (ja) * | 1983-12-15 | 1985-07-09 | Toshiba Corp | 素子分離領域の形成方法 |
US4569117A (en) * | 1984-05-09 | 1986-02-11 | Texas Instruments Incorporated | Method of making integrated circuit with reduced narrow-width effect |
NL8401711A (nl) * | 1984-05-29 | 1985-12-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin plaatselijk een verzonken oxidelaag is aangebracht. |
US4577394A (en) * | 1984-10-01 | 1986-03-25 | National Semiconductor Corporation | Reduction of field oxide encroachment in MOS fabrication |
US4551910A (en) * | 1984-11-27 | 1985-11-12 | Intel Corporation | MOS Isolation processing |
-
1985
- 1985-06-14 NL NL8501720A patent/NL8501720A/nl not_active Application Discontinuation
-
1986
- 1986-06-02 US US06/869,482 patent/US4743566A/en not_active Expired - Fee Related
- 1986-06-10 CA CA000511260A patent/CA1269593A/en not_active Expired - Lifetime
- 1986-06-11 EP EP86201016A patent/EP0208356B1/en not_active Expired - Lifetime
- 1986-06-11 DE DE8686201016T patent/DE3668396D1/de not_active Expired - Lifetime
- 1986-06-11 IE IE1550/86A patent/IE57557B1/en not_active IP Right Cessation
- 1986-06-12 JP JP61135111A patent/JPH07118504B2/ja not_active Expired - Lifetime
- 1986-06-13 KR KR1019860004697A patent/KR950001151B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3668396D1 (de) | 1990-02-22 |
KR950001151B1 (ko) | 1995-02-11 |
KR870000767A (ko) | 1987-02-20 |
CA1269593A (en) | 1990-05-29 |
IE861550L (en) | 1986-12-14 |
JPS61289644A (ja) | 1986-12-19 |
EP0208356B1 (en) | 1990-01-17 |
EP0208356A1 (en) | 1987-01-14 |
JPH07118504B2 (ja) | 1995-12-18 |
US4743566A (en) | 1988-05-10 |
IE57557B1 (en) | 1992-12-16 |
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A1B | A search report has been drawn up | ||
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