NL8401774A - Gas voor het selectief etsen van siliciumnitride en werkwijze voor het selectief etsen van siliciumnitride met het gas. - Google Patents

Gas voor het selectief etsen van siliciumnitride en werkwijze voor het selectief etsen van siliciumnitride met het gas. Download PDF

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Publication number
NL8401774A
NL8401774A NL8401774A NL8401774A NL8401774A NL 8401774 A NL8401774 A NL 8401774A NL 8401774 A NL8401774 A NL 8401774A NL 8401774 A NL8401774 A NL 8401774A NL 8401774 A NL8401774 A NL 8401774A
Authority
NL
Netherlands
Prior art keywords
gas
etching
silicon nitride
film
silicon
Prior art date
Application number
NL8401774A
Other languages
English (en)
Dutch (nl)
Original Assignee
Showa Denko Kk
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58095651A external-priority patent/JPH0612765B2/ja
Priority claimed from JP58222072A external-priority patent/JPS60115232A/ja
Application filed by Showa Denko Kk, Hitachi Ltd filed Critical Showa Denko Kk
Publication of NL8401774A publication Critical patent/NL8401774A/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
NL8401774A 1983-06-01 1984-06-01 Gas voor het selectief etsen van siliciumnitride en werkwijze voor het selectief etsen van siliciumnitride met het gas. NL8401774A (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP58095651A JPH0612765B2 (ja) 1983-06-01 1983-06-01 エ ッ チ ン グ 方 法
JP9565183 1983-06-01
JP22207283 1983-11-28
JP58222072A JPS60115232A (ja) 1983-11-28 1983-11-28 ドライエッチング用ガス

Publications (1)

Publication Number Publication Date
NL8401774A true NL8401774A (nl) 1985-01-02

Family

ID=26436874

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8401774A NL8401774A (nl) 1983-06-01 1984-06-01 Gas voor het selectief etsen van siliciumnitride en werkwijze voor het selectief etsen van siliciumnitride met het gas.

Country Status (3)

Country Link
US (1) US4529476A (oth)
DE (1) DE3420347A1 (oth)
NL (1) NL8401774A (oth)

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US11437244B2 (en) 2017-04-06 2022-09-06 Kanto Denka Kogyo Co., Ltd. Dry etching gas composition and dry etching method

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US5188704A (en) * 1989-10-20 1993-02-23 International Business Machines Corporation Selective silicon nitride plasma etching
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US5538659A (en) * 1993-03-29 1996-07-23 E. I. Du Pont De Nemours And Company Refrigerant compositions including hexafluoropropane and a hydrofluorocarbon
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JP2004503082A (ja) * 2000-07-05 2004-01-29 マイクロン　テクノロジー　インコーポレイテッド 無ドープの酸化ケイ素と窒化珪素との上部にあるドープされた酸化ケイ素のための選択性を有するエッチング剤、そのエッチング剤を使用する方法、及びそれにより形成された構造。
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Also Published As

Publication number Publication date
DE3420347C2 (oth) 1987-08-20
DE3420347A1 (de) 1984-12-06
US4529476A (en) 1985-07-16

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