KR100519140B1 - 퍼플루오로탄소의 제조방법 및 그 용도 - Google Patents
퍼플루오로탄소의 제조방법 및 그 용도 Download PDFInfo
- Publication number
- KR100519140B1 KR100519140B1 KR10-2002-7014134A KR20027014134A KR100519140B1 KR 100519140 B1 KR100519140 B1 KR 100519140B1 KR 20027014134 A KR20027014134 A KR 20027014134A KR 100519140 B1 KR100519140 B1 KR 100519140B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- perfluorocarbon
- organic compound
- oxygen
- producing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 44
- 239000007789 gas Substances 0.000 claims abstract description 186
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000011737 fluorine Substances 0.000 claims abstract description 83
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 83
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 77
- 150000001875 compounds Chemical class 0.000 claims abstract description 64
- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims abstract description 56
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000001301 oxygen Substances 0.000 claims abstract description 47
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 47
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 34
- 239000012535 impurity Substances 0.000 claims abstract description 33
- 239000007805 chemical reaction reactant Substances 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 34
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 33
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 30
- 239000003085 diluting agent Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- LVGUZGTVOIAKKC-UHFFFAOYSA-N 1,1,1,2-tetrafluoroethane Chemical compound FCC(F)(F)F LVGUZGTVOIAKKC-UHFFFAOYSA-N 0.000 claims description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 13
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 12
- 125000001931 aliphatic group Chemical group 0.000 claims description 11
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 9
- 229960004065 perflutren Drugs 0.000 claims description 9
- 239000003054 catalyst Substances 0.000 claims description 8
- 229920006395 saturated elastomer Polymers 0.000 claims description 8
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- GTLACDSXYULKMZ-UHFFFAOYSA-N pentafluoroethane Chemical compound FC(F)C(F)(F)F GTLACDSXYULKMZ-UHFFFAOYSA-N 0.000 claims description 6
- UJPMYEOUBPIPHQ-UHFFFAOYSA-N 1,1,1-trifluoroethane Chemical compound CC(F)(F)F UJPMYEOUBPIPHQ-UHFFFAOYSA-N 0.000 claims description 5
- UKACHOXRXFQJFN-UHFFFAOYSA-N heptafluoropropane Chemical compound FC(F)C(F)(F)C(F)(F)F UKACHOXRXFQJFN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- MSSNHSVIGIHOJA-UHFFFAOYSA-N pentafluoropropane Chemical compound FC(F)CC(F)(F)F MSSNHSVIGIHOJA-UHFFFAOYSA-N 0.000 claims description 3
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical compound CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 29
- 238000002360 preparation method Methods 0.000 description 24
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 21
- 238000003682 fluorination reaction Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 238000004817 gas chromatography Methods 0.000 description 15
- 238000004821 distillation Methods 0.000 description 14
- 229910001873 dinitrogen Inorganic materials 0.000 description 13
- 239000012895 dilution Substances 0.000 description 10
- 238000010790 dilution Methods 0.000 description 10
- 239000007858 starting material Substances 0.000 description 10
- YUCFVHQCAFKDQG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH] YUCFVHQCAFKDQG-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000000746 purification Methods 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000004880 explosion Methods 0.000 description 4
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 239000012024 dehydrating agents Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OYAUGTZMGLUNPS-UHFFFAOYSA-N 1,1,1,2,3,3,3-heptafluoro-2-(1,1,1,2,3,3,3-heptafluoropropan-2-yloxy)propane Chemical compound FC(F)(F)C(F)(C(F)(F)F)OC(F)(C(F)(F)F)C(F)(F)F OYAUGTZMGLUNPS-UHFFFAOYSA-N 0.000 description 1
- -1 CF 3 OCF 3 Chemical class 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- 239000004338 Dichlorodifluoromethane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 125000004773 chlorofluoromethyl group Chemical group [H]C(F)(Cl)* 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 1
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910001055 inconels 600 Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- BPXRXDJNYFWRDI-UHFFFAOYSA-N trifluoro(trifluoromethylperoxy)methane Chemical compound FC(F)(F)OOC(F)(F)F BPXRXDJNYFWRDI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
- C23G5/02803—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/10—Preparation of halogenated hydrocarbons by replacement by halogens of hydrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/093—Preparation of halogenated hydrocarbons by replacement by halogens
- C07C17/20—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms
- C07C17/21—Preparation of halogenated hydrocarbons by replacement by halogens of halogen atoms by other halogen atoms with simultaneous increase of the number of halogen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
생성물 | 산소가스 함량(부피%) | |
제조예 1 | 트리플루오로메탄 | 1.2081 |
제조예 2 | 트리플루오로메탄 | 0.0720 |
제조예 3 | 테트라플루오로에탄 | 1.3314 |
제조예 4 | 테트라플루오로에탄 | 0.0402 |
제조예 5 | F2 | 1.3825 |
제조예 6 | F2 | 0.3020 |
반응시작물질 | 반응온도(℃) | 반응시작물질 중의산소가스의 총 농도(부피%) | 퍼플루오로탄소 중의산소함유 화합물의 농도(부피ppm) | 정제후 산소함유 화합물의 농도(부피ppm) | |
실시예 1 | 제조예 2제조예 6 | 420 | 0.3740 | 2이하 | 0.5이하 |
실시예 2 | 제조예 4제조예 6 | 370 | 0.3422 | 1이하 | 0.4이하 |
비교예 1 | 제조예 1제조예 5 | 450 | 2.5906 | 271 | |
비교예 2 | 제조예 3제조예 5 | 430 | 2.7139 | 319 | 130 |
비교예 3 | 제조예 2제조예 6 | 520 | 0.3740 | 635 |
Claims (24)
- 유기화합물 및 불소가스를 함유하는 반응시작물질로부터 퍼플루오로탄소를 제조하는 방법으로서, 상기 유기화합물과 상기 불소가스를 200∼500℃의 온도에서 접촉시키면서, 반응계 내의 산소가스의 함량을 상기 반응시작물질 중의 가스성분에 대해서 2부피% 이하까지 제어하여, 불순물 함량이 저감된 퍼플루오로탄소를 제조하는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물과 상기 불소가스를 희석가스의 존재하에서 접촉시키는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물은 탄소수 6이하의 지방족 포화 화합물 및/또는 탄소수 6이하의 지방족 불포화 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항에 있어서, 상기 유기화합물은 탄소수 6이하의 지방족 포화 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제4항에 있어서, 상기 유기화합물은 플루오로메탄, 디플루오로메탄, 트리플루오로메탄, 트리플루오로에탄, 테트라플루오로에탄, 펜타플루오로에탄, 펜타플루오로프로판, 헥사플루오로프로판 및 헵타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 희석가스의 존재하에서 촉매를 사용하지 않고 가스상에서 상기 유기화합물과 불소가스를 접촉시킴으로써 퍼플루오로탄소를 제조하는 방법으로서, 상기 유기화합물과 불소가스를 접촉시키기 전의 상기 불소가스에 함유된 산소가스의 양이 상기 불소가스에 대해서 1부피% 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제6항에 있어서, 상기 유기화합물은 탄소수 4이하의 히드로플루오로탄소인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제7항에 있어서, 상기 유기화합물은 디플루오로메탄, 트리플루오로메탄, 트리플루오로에탄, 테트라플루오로에탄, 펜타플루오로에탄, 헥사플루오로프로판 및 헵타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 반응계로 도입되는 불소가스의 양은 상기 반응계 내의 가스성분의 총량에 대해서 9부피% 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제2항에 있어서, 상기 희석가스는 테트라플루오로메탄, 헥사플루오로에탄, 옥타플루오로프로판 및 불소화수소로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제10항에 있어서, 상기 희석가스는 상기 불소화수소를 함유하고, 그 불소화수소의 함량은 희석가스 전체 양에 대해서 50부피% 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 불순물은 산소함유 화합물인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 불순물을 흡착하여 제거하는 단계를 더 포함하는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제13항에 있어서, 상기 불순물은 활성탄에 의해 흡착되어 제거되는 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 퍼플루오로탄소는 테트라플루오로메탄, 헥사플루오로에탄 및 옥타플루오로프로판으로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 퍼플루오로탄소에 함유된 산소함유 화합물의 총량은 5부피ppm 이하인 것을 특징으로 하는 퍼플루오로탄소의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001048985A JP4703865B2 (ja) | 2001-02-23 | 2001-02-23 | パーフルオロカーボン類の製造方法およびその用途 |
JPJP-P-2001-00048985 | 2001-02-23 | ||
US27245101P | 2001-03-02 | 2001-03-02 | |
US60/272,451 | 2001-03-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020089516A KR20020089516A (ko) | 2002-11-29 |
KR100519140B1 true KR100519140B1 (ko) | 2005-10-04 |
Family
ID=26610023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-7014134A KR100519140B1 (ko) | 2001-02-23 | 2002-02-21 | 퍼플루오로탄소의 제조방법 및 그 용도 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7064240B2 (ko) |
KR (1) | KR100519140B1 (ko) |
CN (1) | CN1301947C (ko) |
AU (1) | AU2002233670A1 (ko) |
WO (1) | WO2002066408A2 (ko) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838708B2 (en) | 2001-06-20 | 2010-11-23 | Grt, Inc. | Hydrocarbon conversion process improvements |
US8611919B2 (en) * | 2002-05-23 | 2013-12-17 | Wounder Gmbh., Llc | System, method, and computer program product for providing location based services and mobile e-commerce |
US20050014383A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas |
JP2007525477A (ja) | 2003-07-15 | 2007-09-06 | ジーアールティー インコーポレイテッド | 炭化水素の合成 |
US20050171393A1 (en) | 2003-07-15 | 2005-08-04 | Lorkovic Ivan M. | Hydrocarbon synthesis |
US7244867B2 (en) | 2004-04-16 | 2007-07-17 | Marathon Oil Company | Process for converting gaseous alkanes to liquid hydrocarbons |
US20080275284A1 (en) | 2004-04-16 | 2008-11-06 | Marathon Oil Company | Process for converting gaseous alkanes to liquid hydrocarbons |
US7674941B2 (en) | 2004-04-16 | 2010-03-09 | Marathon Gtf Technology, Ltd. | Processes for converting gaseous alkanes to liquid hydrocarbons |
US8173851B2 (en) | 2004-04-16 | 2012-05-08 | Marathon Gtf Technology, Ltd. | Processes for converting gaseous alkanes to liquid hydrocarbons |
US20060100469A1 (en) | 2004-04-16 | 2006-05-11 | Waycuilis John J | Process for converting gaseous alkanes to olefins and liquid hydrocarbons |
US8642822B2 (en) | 2004-04-16 | 2014-02-04 | Marathon Gtf Technology, Ltd. | Processes for converting gaseous alkanes to liquid hydrocarbons using microchannel reactor |
MY153701A (en) | 2006-02-03 | 2015-03-13 | Grt Inc | Separation of light gases from halogens |
CA2641348C (en) | 2006-02-03 | 2014-12-23 | Grt, Inc. | Continuous process for converting natural gas to liquid hydrocarbons |
US8921625B2 (en) | 2007-02-05 | 2014-12-30 | Reaction35, LLC | Continuous process for converting natural gas to liquid hydrocarbons |
WO2008148113A1 (en) | 2007-05-24 | 2008-12-04 | Grt, Inc. | Zone reactor incorporating reversible hydrogen halide capture and release |
US8096998B2 (en) * | 2007-09-26 | 2012-01-17 | Ebi, Llc | External fixation tensioner |
US8282810B2 (en) | 2008-06-13 | 2012-10-09 | Marathon Gtf Technology, Ltd. | Bromine-based method and system for converting gaseous alkanes to liquid hydrocarbons using electrolysis for bromine recovery |
US8198495B2 (en) | 2010-03-02 | 2012-06-12 | Marathon Gtf Technology, Ltd. | Processes and systems for the staged synthesis of alkyl bromides |
US8367884B2 (en) | 2010-03-02 | 2013-02-05 | Marathon Gtf Technology, Ltd. | Processes and systems for the staged synthesis of alkyl bromides |
US9447007B2 (en) | 2010-12-21 | 2016-09-20 | Solvay Specialty Polymers Italy S.P.A. | Process for producing fluorinated organic compounds |
US8815050B2 (en) | 2011-03-22 | 2014-08-26 | Marathon Gtf Technology, Ltd. | Processes and systems for drying liquid bromine |
US8436220B2 (en) | 2011-06-10 | 2013-05-07 | Marathon Gtf Technology, Ltd. | Processes and systems for demethanization of brominated hydrocarbons |
US8829256B2 (en) | 2011-06-30 | 2014-09-09 | Gtc Technology Us, Llc | Processes and systems for fractionation of brominated hydrocarbons in the conversion of natural gas to liquid hydrocarbons |
US8802908B2 (en) | 2011-10-21 | 2014-08-12 | Marathon Gtf Technology, Ltd. | Processes and systems for separate, parallel methane and higher alkanes' bromination |
US9193641B2 (en) | 2011-12-16 | 2015-11-24 | Gtc Technology Us, Llc | Processes and systems for conversion of alkyl bromides to higher molecular weight hydrocarbons in circulating catalyst reactor-regenerator systems |
CN105693463A (zh) * | 2014-11-28 | 2016-06-22 | 浙江省化工研究院有限公司 | 一种制备c2~c6全氟烷烃的方法 |
CN111566077B (zh) * | 2018-01-17 | 2023-03-24 | 昭和电工株式会社 | 四氟甲烷的制造方法 |
WO2019142627A1 (ja) * | 2018-01-19 | 2019-07-25 | 昭和電工株式会社 | テトラフルオロメタンの製造方法 |
CN108940129A (zh) * | 2018-08-29 | 2018-12-07 | 山东重山光电材料股份有限公司 | 一种多级利用氟化剂生产氟化碳材料的系统及生产方法 |
CN111099957B (zh) * | 2019-12-26 | 2021-04-13 | 福建德尔科技有限公司 | 一种电子级四氟化碳的纯化系统及方法 |
CN111302878B (zh) * | 2020-04-18 | 2022-09-16 | 云南正邦科技有限公司 | 一种由醇脱水连续制备烯烃的方法 |
CN112778077A (zh) * | 2021-01-18 | 2021-05-11 | 福建德尔科技有限公司 | 基于微反应器的电子级c2f6制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2712732C2 (de) * | 1977-03-23 | 1986-03-13 | Hoechst Ag, 6230 Frankfurt | Verfahren zur Herstellung von Oktafluorpropan |
EP0031519A1 (en) * | 1979-12-26 | 1981-07-08 | Allied Corporation | Preparation of fluorinated organic compounds with elemental fluorine and fused alumina reactor |
US4377715A (en) * | 1979-12-26 | 1983-03-22 | Allied Corporation | Production of perfluoropropane |
US5718807A (en) | 1994-09-20 | 1998-02-17 | E. I. Du Pont De Nemours And Company | Purification process for hexafluoroethane products |
JP2947158B2 (ja) | 1996-03-07 | 1999-09-13 | 昭和電工株式会社 | ヘキサフルオロエタンの製造方法 |
JP3067633B2 (ja) | 1996-03-26 | 2000-07-17 | 昭和電工株式会社 | パーフルオロカーボンの製造方法 |
TW487983B (en) | 1996-04-26 | 2002-05-21 | Hitachi Ltd | Manufacturing method for semiconductor device |
US5981221A (en) * | 1997-03-26 | 1999-11-09 | Incyte Pharmaceuticals, Inc. | Histone fusion protein |
-
2002
- 2002-02-21 WO PCT/JP2002/001549 patent/WO2002066408A2/en active IP Right Grant
- 2002-02-21 AU AU2002233670A patent/AU2002233670A1/en not_active Abandoned
- 2002-02-21 CN CNB028004043A patent/CN1301947C/zh not_active Expired - Lifetime
- 2002-02-21 KR KR10-2002-7014134A patent/KR100519140B1/ko active IP Right Grant
- 2002-02-21 US US10/258,172 patent/US7064240B2/en not_active Expired - Lifetime
-
2004
- 2004-02-17 US US10/778,239 patent/US7176337B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1301947C (zh) | 2007-02-28 |
KR20020089516A (ko) | 2002-11-29 |
US7176337B2 (en) | 2007-02-13 |
US7064240B2 (en) | 2006-06-20 |
US20040162450A1 (en) | 2004-08-19 |
US20030163008A1 (en) | 2003-08-28 |
AU2002233670A1 (en) | 2002-09-04 |
CN1457332A (zh) | 2003-11-19 |
WO2002066408A3 (en) | 2003-01-09 |
WO2002066408A2 (en) | 2002-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100519140B1 (ko) | 퍼플루오로탄소의 제조방법 및 그 용도 | |
JP5132555B2 (ja) | 高純度ヘキサフルオロプロピレンの製造方法及びクリーニングガス | |
EP2096096B1 (en) | Azeotrope-like composition of 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244BB) and hydrogen fluoride (HF) | |
US7208644B2 (en) | Production and use of hexafluoroethane | |
EP2098499B2 (en) | Azeotrope-like composition of 2-chloro-3,3,3-trifluoropropene (HCFC-1233xf) and hydrogen fluoride (HF) | |
CN113816828A (zh) | (z)-1-氯-2,3,3-三氟-1-丙烯的制造方法 | |
JP4703865B2 (ja) | パーフルオロカーボン類の製造方法およびその用途 | |
RU2215730C2 (ru) | Способ очистки тетрафторметана и его применение | |
KR100588025B1 (ko) | 과불화 생성물을 정제하는 방법 | |
KR100516573B1 (ko) | 헥사플루오로에탄 제조방법 및 그것의 용도 | |
KR100543253B1 (ko) | 헥사플루오로에탄의 제조 방법 및 용도 | |
JP4225736B2 (ja) | フルオロエタンの製造方法およびその用途 | |
US6489523B1 (en) | Process for producing hexafluoroethane and use thereof | |
US7074974B2 (en) | Process for the production of fluoroethane and use of the same | |
KR100580915B1 (ko) | 펜타플루오로에탄의 정제방법, 제조방법 및 그 용도 | |
JP4463385B2 (ja) | ヘキサフルオロエタンの製造方法及びその用途 | |
KR20020023966A (ko) | 테트라플루오로메탄의 정제 방법 및 그 용도 | |
JPH09241187A (ja) | テトラフルオロメタンの製造方法 | |
US20040242943A1 (en) | Process for the production of fluoroethane and use of the produced fluoroethane | |
JP4458784B2 (ja) | ペンタフルオロエタンの製造方法およびその用途 | |
JP2003055277A (ja) | ヘキサフルオロエタンの製造方法およびその用途 | |
KR100283711B1 (ko) | 헥사플루오로에탄의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120907 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20130903 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150827 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20160831 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20170830 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20180920 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20190919 Year of fee payment: 15 |