DE69508273T2 - Verfahren zum ätzen von siliziumnitrid mit verstärkung der kritischen abmessung - Google Patents
Verfahren zum ätzen von siliziumnitrid mit verstärkung der kritischen abmessungInfo
- Publication number
- DE69508273T2 DE69508273T2 DE69508273T DE69508273T DE69508273T2 DE 69508273 T2 DE69508273 T2 DE 69508273T2 DE 69508273 T DE69508273 T DE 69508273T DE 69508273 T DE69508273 T DE 69508273T DE 69508273 T2 DE69508273 T2 DE 69508273T2
- Authority
- DE
- Germany
- Prior art keywords
- reinforcement
- silicon nitride
- critical dimensions
- etching silicon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 230000002787 reinforcement Effects 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34217494A | 1994-11-18 | 1994-11-18 | |
| PCT/US1995/014703 WO1996016437A1 (en) | 1994-11-18 | 1995-11-08 | Silicon nitride etch process with critical dimension gain |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69508273D1 DE69508273D1 (de) | 1999-04-15 |
| DE69508273T2 true DE69508273T2 (de) | 1999-11-04 |
Family
ID=23340690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69508273T Expired - Lifetime DE69508273T2 (de) | 1994-11-18 | 1995-11-08 | Verfahren zum ätzen von siliziumnitrid mit verstärkung der kritischen abmessung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6593245B1 (de) |
| EP (1) | EP0792516B1 (de) |
| DE (1) | DE69508273T2 (de) |
| WO (1) | WO1996016437A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5926690A (en) * | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
| EP1014434B1 (de) * | 1998-12-24 | 2008-03-26 | ATMEL Germany GmbH | Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches |
| US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
| US8614151B2 (en) | 2008-01-04 | 2013-12-24 | Micron Technology, Inc. | Method of etching a high aspect ratio contact |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4028155A (en) | 1974-02-28 | 1977-06-07 | Lfe Corporation | Process and material for manufacturing thin film integrated circuits |
| DE3164742D1 (en) | 1980-09-22 | 1984-08-16 | Tokyo Shibaura Electric Co | Method of smoothing an insulating layer formed on a semiconductor body |
| DE3420347A1 (de) | 1983-06-01 | 1984-12-06 | Hitachi, Ltd., Tokio/Tokyo | Gas und verfahren zum selektiven aetzen von siliciumnitrid |
| JPH0642510B2 (ja) * | 1983-06-13 | 1994-06-01 | エヌ・シー・アール・インターナショナル・インコーポレイテッド | 半導体構造の形成方法 |
| US4484979A (en) * | 1984-04-16 | 1984-11-27 | At&T Bell Laboratories | Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer |
| IT1213230B (it) * | 1984-10-23 | 1989-12-14 | Ates Componenti Elettron | Processo planox a becco ridotto per la formazione di componenti elettronici integrati. |
| JPH07118474B2 (ja) * | 1984-12-17 | 1995-12-18 | ソニー株式会社 | エツチングガス及びこれを用いたエツチング方法 |
| US4966870A (en) * | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
| EP0337109A1 (de) * | 1988-04-14 | 1989-10-18 | International Business Machines Corporation | Verfahren zum Herstellen von Kontakten |
| US4836885A (en) * | 1988-05-03 | 1989-06-06 | International Business Machines Corporation | Planarization process for wide trench isolation |
| JP3033104B2 (ja) | 1989-11-17 | 2000-04-17 | ソニー株式会社 | エッチング方法 |
| JP2663739B2 (ja) * | 1991-04-08 | 1997-10-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5217567A (en) | 1992-02-27 | 1993-06-08 | International Business Machines Corporation | Selective etching process for boron nitride films |
-
1995
- 1995-11-08 WO PCT/US1995/014703 patent/WO1996016437A1/en active IP Right Grant
- 1995-11-08 DE DE69508273T patent/DE69508273T2/de not_active Expired - Lifetime
- 1995-11-08 EP EP95939904A patent/EP0792516B1/de not_active Expired - Lifetime
-
1996
- 1996-08-01 US US08/690,848 patent/US6593245B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0792516B1 (de) | 1999-03-10 |
| DE69508273D1 (de) | 1999-04-15 |
| WO1996016437A1 (en) | 1996-05-30 |
| US6593245B1 (en) | 2003-07-15 |
| EP0792516A1 (de) | 1997-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US |