NL1015367C2 - Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. - Google Patents

Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. Download PDF

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Publication number
NL1015367C2
NL1015367C2 NL1015367A NL1015367A NL1015367C2 NL 1015367 C2 NL1015367 C2 NL 1015367C2 NL 1015367 A NL1015367 A NL 1015367A NL 1015367 A NL1015367 A NL 1015367A NL 1015367 C2 NL1015367 C2 NL 1015367C2
Authority
NL
Netherlands
Prior art keywords
coating composition
amine
amine anti
pollution
pattern
Prior art date
Application number
NL1015367A
Other languages
English (en)
Dutch (nl)
Other versions
NL1015367A1 (nl
Inventor
Jae Chang Jung
Geun Su Lee
Cha Won Koh
Min Ho Jung
Ki Ho Baik
Keun Kyu Kong
Hyeong Soo Kim
Jin Soo Kim
Sung Eun Hong
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1015367A1 publication Critical patent/NL1015367A1/xx
Application granted granted Critical
Publication of NL1015367C2 publication Critical patent/NL1015367C2/nl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
NL1015367A 1999-06-03 2000-05-31 Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. NL1015367C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1999-0020538A KR100401116B1 (ko) 1999-06-03 1999-06-03 아민오염방지 물질 및 이를 이용한 미세패턴 형성방법
KR19990020538 1999-06-03

Publications (2)

Publication Number Publication Date
NL1015367A1 NL1015367A1 (nl) 2000-12-06
NL1015367C2 true NL1015367C2 (nl) 2001-05-17

Family

ID=19589910

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1015367A NL1015367C2 (nl) 1999-06-03 2000-05-31 Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan.

Country Status (9)

Country Link
JP (1) JP2001022080A (it)
KR (1) KR100401116B1 (it)
CN (1) CN1215375C (it)
DE (1) DE10027587A1 (it)
FR (1) FR2794538B1 (it)
GB (1) GB2352825B (it)
IT (1) IT1320493B1 (it)
NL (1) NL1015367C2 (it)
TW (1) TWI266958B (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100537181B1 (ko) * 1999-12-30 2005-12-16 주식회사 하이닉스반도체 노광후 현상 지연에 의한 패턴 불량을 방지할 수 있는포토레지스트 패턴 형성 방법
KR100390991B1 (ko) * 2001-05-29 2003-07-12 주식회사 하이닉스반도체 반도체소자의 감광막패턴 형성방법
KR100390998B1 (ko) * 2001-06-26 2003-07-12 주식회사 하이닉스반도체 반도체소자의 감광막패턴 형성방법
JP3476082B2 (ja) * 2001-11-05 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
KR100642416B1 (ko) 2004-08-31 2006-11-03 주식회사 하이닉스반도체 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
CN1786830A (zh) * 2004-12-09 2006-06-14 三洋电机株式会社 抗蚀剂图案形成方法
US8168367B2 (en) 2008-07-11 2012-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US9746768B2 (en) * 2013-01-24 2017-08-29 Nissan Chemical Industries, Ltd. Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same
KR101756253B1 (ko) * 2013-01-31 2017-07-10 후지필름 가부시키가이샤 패턴형성방법, 이들을 사용한 전자 디바이스의 제조방법, 및 전자 디바이스

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895949A (en) * 1972-07-24 1975-07-22 Asahi Chemical Ind Photosensitive element comprising photopolymerizable layer and protective layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
DE4415113A1 (de) * 1993-04-30 1994-11-24 Toyo Boseki Mehrschichtiges Photopolymerelement
EP0703499A1 (en) * 1994-09-23 1996-03-27 Minnesota Mining And Manufacturing Company Top coats for shoot and run printing plates
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
EP0751433A2 (en) * 1995-06-29 1997-01-02 Nippon Zeon Co., Ltd. Release composition and photosensitive rubber plate with layer of the same
US5624789A (en) * 1992-07-10 1997-04-29 Hoechst Celanese Corporation Metal ion reduction in top anti-reflective coatings for photoresisis
EP0803776A2 (en) * 1996-04-25 1997-10-29 Hoechst Japan Limited Composition for anti-reflection coating
US5783362A (en) * 1994-04-27 1998-07-21 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition
JPH10261574A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652273A (en) * 1967-09-11 1972-03-28 Ibm Process using polyvinyl butral topcoat on photoresist layer
DE3715790A1 (de) * 1987-05-12 1988-11-24 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
CA2090039A1 (en) * 1990-09-18 1992-03-19 Willard Earl Conley Top coat and acid catalyzed resists
DE4117127A1 (de) * 1991-05-25 1992-11-26 Basf Ag Lichtempfindliche aufzeichnungselemente, verfahren zu ihrer herstellung und weiterverarbeitung sowie geraete fuer die durchfuehrung dieser verfahren

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895949A (en) * 1972-07-24 1975-07-22 Asahi Chemical Ind Photosensitive element comprising photopolymerizable layer and protective layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
US5624789A (en) * 1992-07-10 1997-04-29 Hoechst Celanese Corporation Metal ion reduction in top anti-reflective coatings for photoresisis
DE4415113A1 (de) * 1993-04-30 1994-11-24 Toyo Boseki Mehrschichtiges Photopolymerelement
US5783362A (en) * 1994-04-27 1998-07-21 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition
EP0703499A1 (en) * 1994-09-23 1996-03-27 Minnesota Mining And Manufacturing Company Top coats for shoot and run printing plates
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
EP0751433A2 (en) * 1995-06-29 1997-01-02 Nippon Zeon Co., Ltd. Release composition and photosensitive rubber plate with layer of the same
EP0803776A2 (en) * 1996-04-25 1997-10-29 Hoechst Japan Limited Composition for anti-reflection coating
JPH10261574A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体装置の製造方法
US5985519A (en) * 1997-03-19 1999-11-16 Fujitsu Limited Method of manufacturing semiconductor device using top antireflection film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03 31 March 1997 (1997-03-31) *

Also Published As

Publication number Publication date
NL1015367A1 (nl) 2000-12-06
FR2794538B1 (fr) 2004-08-20
GB2352825B (en) 2003-12-17
KR20010001380A (ko) 2001-01-05
KR100401116B1 (ko) 2003-10-10
FR2794538A1 (fr) 2000-12-08
GB0012727D0 (en) 2000-07-19
TWI266958B (en) 2006-11-21
ITTO20000510A0 (it) 2000-06-01
GB2352825A (en) 2001-02-07
IT1320493B1 (it) 2003-12-10
CN1215375C (zh) 2005-08-17
ITTO20000510A1 (it) 2001-12-01
DE10027587A1 (de) 2000-12-21
JP2001022080A (ja) 2001-01-26
CN1276541A (zh) 2000-12-13

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RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20010314

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V1 Lapsed because of non-payment of the annual fee

Effective date: 20131201