GB2352825A - Top coating composition for photoresist and process for forming fine pattern - Google Patents
Top coating composition for photoresist and process for forming fine pattern Download PDFInfo
- Publication number
- GB2352825A GB2352825A GB0012727A GB0012727A GB2352825A GB 2352825 A GB2352825 A GB 2352825A GB 0012727 A GB0012727 A GB 0012727A GB 0012727 A GB0012727 A GB 0012727A GB 2352825 A GB2352825 A GB 2352825A
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- Prior art keywords
- coating composition
- amine
- protecting
- contamination
- straight
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Paints Or Removers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
An amine contamination-protecting top-coating composition and a process for forming a fine pattern using the same is disclosed. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives which include amino acid derivatives; amide derivatives; urethane compounds including urea; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer with a main chain containing alicyclic derivatives using a light source, such as KrF (248nm), ArF (193nm), F<SB>2</SB> (157nm), E-beam, ion beam and extreme ultraviolet (EUV).
Description
2352825 TOP-COATING COMPOSITION FOR PHOTORESIST AND PROCESS FOR FORMING
FINE PATTERN USING THE SAME
BACKGROUND OF THE INVENTION
1 Field of the Invention
The present invention relates to a top-coating composition and a process for forming a fine pattern by using the same, which are used for a photolithography process of a semiconductor device fabrication method. In particular, the invention relates to a top-coating composition for protecting amine-contamination and a method for forming a fine pattern by using the same, that are suitable for a photolithography process for forming a ultrarnicro pattern employing light sources having an ultrashort wavelength below 250nm.
2. Description of the Background Art
Recently, chemical amplification-type DUV photoresists have been investigated in order to achieve high sensitivity in minute image formation processes for preparing semiconductor devices. Such photoresists are prepared by blending a photoacid generator and matrix resin polymer having an acid labile group.
According to the reaction mechanism of such a photoresist (sometimes referred to as "PR"), the photoacid generator generates acid when it is illuminated by a light source, and the main chain or branched chain of the resin is reacted with the generated acid to be decomposed or crosslinked. The polarity change of the resin induces solubility differences between the exposed portion and unexposed 1 portion in the developing solution, to form a predetermined pattern.
In the' lithography process, resolution depends upon the wavelength of the light source - the shorter the wavelength, the more minute the pattern that can be formed.
Lithography processes employing light sources having a wavelength below 250nm have been recently investigated. As a suitable photoresist polymer, there have been a lot of interest directed to a polymer containing alicyclic derivatives in its main or branched chain. However, applying these alicyclic polymers to the semiconductor fabrication method has many disadvantages. For example, the lo chemical properties of the alicyclic polymer must be varied due to the acid generated by the exposure to light. In addition, the generated acid may be neutralized by environmental amine compounds during the time between the exposure and post exposure baking ("post exposure delay effect"). As a result, a desired resolution may not be obtained or the pattem may have a T-shape ("T topping"). This problem is especially acute when the concentration of environmental amine is over 30ppb, which leads to no pattern formation.
In order to overcome the aforementioned disadvantages, the following methods have been suggested in the prior art:
(1) An annealing method whereby the PR resin is baked over its glass transition temperature (Tg) after the PR is coated [see W. D. Hinsberg, S. A.
MacDonald, N. J. Clecak, C. D. Snyder, and H. Ito, Proc. SPIE, 1925, (1993) 43; H.
Ito, W. P. England, R. Sooriyakumaran, N. J. Clecak, G. Breyta, W. D. Hinsberg, H.
Lee, and D. Y. Yoon, J. Photopolymer Sci. and TechnoL, 6, (1993) 547; G. Breyta, D. C. Hofer, H. Ito, D. Seeger, K. Petrillo, H. Moritz, and T. Fischer, J Photopolymer Sci. and Technol., 7, (1994) 449; H. Ito, G. Breyta, D. Hofer, R.
2 Sooriyakumaran, K. Petrillo, and D. Seeger, J. Photopolymer ScL and TechnoL, 7, (1994) 433; H. Ito, G. Breyta, R. Sooriyakumaran, and D. Hofer, J Photopolymer ScL and Technol., 8, (1995) 505] (2) Adding the amine compound to the PR [see Y Kawai, A. Otaka, J.
Nakamura, A. Tanaka, and T. Matsuda, J Photopolymer Sci. and Technol., 8, (1995) 535; S. Saito, N. Kihara, T. Naito, M. Nakase, T. Nakasugi, and Y. Kat Photopolymer Sci. and Technol., 9, (1996) 677; S. Funato, Y Kinoshita, T. Kuto, S.
Masuda,, H. Okazaki, M. Padmanaban, K. J. Przybilla, N. Suehiro, and G.
Pawlowski, J Photopolymer Sci. and Technol., 8, (1995) 543]; (3) Forming a top-coating at an upper portion of the PR in order to protect the PR from the environmental amine contamination, after the PR coating step and the baking step [see J. Nakamura, H. Ban, Y. Kawai, and A. Tanaka, J Photopolymer Sei. and Technol., 8, (1995) 555; A. Oikawa, Y Hatakenaka, Y, Ikeda, Y. Kokabo, S. Miyata, N. Santoh, and N. Abe, J Photopolymer Sci. and Technol., 8, (1995) 519].
However, the above conventional methods also have many disadvantages, such as complication of the process. Actually, it is difficult to form an ultrafine pattern by using the above methods.
SUMMARY OF THE INVENTION
Accordingly, an object of the present invention is to provide a topcoating composition containing an amine contamination-protecting compound that can solve the above-mentioned problems.
In addition, it is another object of the present invention to provide a process 3 for forming a photoresist pattern by using the aforementioned top-coating composition.
BRIEF DESCRIPTION OF THE DRAWINGS
Figures I and 2 are SEM photographs showing a conventional photoresist pattern; and Figures 3 to 7 are SEM photographs showing a photoresist pattern in accordance with a preferred example of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
In order to achieve the above-described objects, the present invention provides an amine contamination-protecting top-coating composition comprising a top-coating material and an amine contamination-protecting compound which has a basic or weakly basic property (i.e., a basic compound). The present invention also provides a method for forming a fine pattern by using the same.
Any of the commercially available materials for top-coating semiconductor devices, which are well known to one of ordinary skill in the art, can be used in the present invention. Examples of such materials are sold under the designations "NFC 540" by Japan Synthetic Rubber, and "Aquatar" by Clariant, Inc.
The amine contamination-protecting compound of the present invention is a basic or weakly basic compound, preferably a water-soluble compound, including cyclic and acyclic nitrogen-containing compounds. Exemplary nitrogen-containing compounds which are useful in the present invention include amine derivatives 4 (including amino acid derivatives); amide derivatives; urethane compounds including urea; and salts thereof Mole% range of the amine contamination protecting compound is preferably 0.001-0.1 mole % to water, more preferably 0.005-0.05 mole % to water, and most preferably 0.007-0.03 mole % to water.
Preferably, the conjugate acid (i.e., a protonated form) of the basic compound has pKa of about 13 or less, preferably about 11 or less, more preferably about 9 or less, and most preferably about 7 or less.
In one particular embodiment, the amine contamination-protecting compound is a compound of formula 1:
R I-N- R2 R3 I where each of R1, R2 and R3 is independently H orCI-C20 alkyl. Alkyl groups according to the present invention are aliphatic hydrocarbons which can be straight or branched chain groups. Alkyl groups optionally can be substituted with one or more substituents, such as a halogen, alkenyl, alkynyl, aryl, hydroxy, amino, thio, alkoxy, carboxy, oxo or cycloalkyl. There may be optionally inserted along the alkyl group one or more oxygen, sulfur or substituted or unsubstituted nitrogen atoms. Preferred alkyl groups include unsubstituted alkyl groups and substituted alkyl groups containing one or more hydroxy, amine, and/or carbonyl (such as.
ketone, carboxylic acid, and ester) groups, i.e.,'straight or branched CIC20 alkyl, straight or branched CI-C2() alcohol (-OH), straight or branched CI-C20 carboxylic acid, straight or branched CI-C20 amine, straight or branched CI-C2,) ketone, or straight or branchedCl-C20 ester.
In one aspect of the present invention, the amine contaminationprotecting compound comprises an amino acid, in particular L-proline (i.e. , compound of formula 11), tetramethylammonium hydroxide pentahydrate (i. e., compound of 5 formula III), triethanolamine (i.e., compound of formula IV), and mixtures thereof Preferably, the amine contamination- protecting compound comprises triethanolamine.
CH3 I HOC2HS-N-C2H50H H3C-N-+CHPFF-5H20 _'HOOH N H CH3 C2H50H III IV It has been discovered by the present inventors, that when a top-coating step is carried out using the amine contamination-protecting top-coating composition of the present invention, an ultrafine pattern having an excellent profile can be formed. Without being bound by any theory, it is believed that the amine contamination-protecting top-coating composition of the present invention effectively intercepts environmental amine contamination during the post exposure delay (hereinafter, referred to as TED), and prevents acid, which is generated by the light exposure, from diffusing into an unexposed area. That is, when an amine contamination-protecting compound of the present invention is added to a conventional top-coating composition, the resulting amine contamination-protecting top-coating composition has a suitable basic property to act as a buffer to prevent the acid generated at the exposed area from being contaminated by the environmental amine compounds. In addition, the amine contamination-protecting top-coating composition of the present invention is coated at the upper portion of 6 the PR. It is believed that the amine contamination-protecting compound contained in the amine contamination-protecting top-coating composition of the present invention restricts acid diffusion on the PR surface, thereby providing the superior pattern having a vertical profile. 5 Additional objects, advantages, and novel features of this invention will become apparent to those skilled in the art upon examination of the following examples thereof, which are not intended to be limiting. EXAMPLES In order to confirm the effects of the top-coating composition according to io the present invention, a PR pattern is formed in the following Examples by employing a top-coating process which comprises: (a) coating a photoresist composition on a substrate to form a photoresist film; (b) coating a top-coating composition on the upper portion of the 15 photoresist film to form a top-cohting; (c) exposing the resultant coated substrate to light by using an exposer; and (d) developing the resultant product. The PR composition used above is prepared by dissolving (i) poly(2hydroxyethyl 5-norbomene-2-carboxylic acid / tert-butyl 5-norbomene-220 carboxylate / 5-norbomene-2-carboxylic acid / maleic anhydride), (ii) a photoacid generator and (iii) certain other optional additives in (iv) propylene glycol methyl ether acetate (PGMEA) solvent [see J. C. Jung, C. K. Bok, and K. H. Baik, J Photopolymer Sci. and TechnoL, 10, (1997) 529; J. C. Jung, C. K. Bok, and K. H. Baik, Proc. SPIE, 3333, (1998) 11; J. C. Jung, M. H. Jung, and K. H. Baik, J. 25 Photopolymer Sci. and TechnoL, 11, (1998) 481].
7 The amine contamination-protecting top-coating composition in the Invention Examples is prepared by adding the arnine contaminationprotecting compound to a conventional top-coating composition.
All the pattern formation experiments are performed under a condition having the environmental amine concentration of over 15 parts per billion (ppb).
Comparative Example I At an environmental amine concentration of 15 ppb, the PR composition is coated on the substrate, baked at 110 'C for 90 seconds, and cooled at 23 C.
Thereafter, an NFC 540 top-coating material manufactured by Japan Synthetic Rubber (hereinafter, referred to as 'JSR') is coated as a topcoating composition on the upper portion of the PR coating, baked at 60 'C for 60 seconds and cooled.
The resultant product is exposed to light by an ArF exposer, baked at I 10 OC for 90 seconds, and developed in 2.38 wt% TMAH solution, thereby obtaining the 150 nm pattern shown in Figure 1.
As shown in Figure 1, the upper portion of the pattern is considerably damaged, and the vertical profile thereof is not complete. It is believed that this results from acid diffusion to the unexposed area during the PED.
Comparative Example 2 At an environmental amine concentration of 15 ppb, the PR composition is coated on the substrate, baked at I 10 'C for 90 seconds, and cooled at 23 OC.
Thereafter, an Aquatar top-coating material manufactured by Clariant Inc.
is coated on the upper portion of the PR coating, baked at 60 OC for 60 seconds and cooled.
The resultant product is exposed to light by the ArF exposer, baked at 110 8 OC for 90 seconds, and developed in the 2.38 wt% TMAH solution, thereby obtaining the 150 nm pattern shown in Figure 2.
As illustrated in Figure 2, the upper portion of the pattern is considerably damaged as in Figure 1, and the developing state of the exposed area is not complete. Invention Example I A novel amine contamination-protecting top-coating composition of the present invention is first prepared by blending 20 g of NFC 540 (a top- coating material manufactured by JSR) and 0.0 16 g of L-proline.
The PR pattern is formed by repeating the procedure of Comparative Example 1 but using the above-described composition as the amine contaminationprotecting top-coating composition. Briefly, at the environmental amine concentration of about 15 ppb, the PR composition is coated on the substrate, baked at 110 'C for 90 seconds, and cooled at 23 OC.
Thereafter, the amine contamination-protecting top-coating composition is coated on the upper portion of the PR coating baked at 60 'C for 60 seconds and cooled.
The resultant product is exposed to light by the ArF exposer, baked at 110 OC for 90 seconds, and developed in the 2.38 wt% TMAH solution, to produce the 150 nm pattern shown in Figure 3.
Compared to Figure 1, the upper portion of the pattern in Figure 3 is significantly less damaged and shows a significantly improved vertical profile.
Invention Example A novel amine contamination-protecting top-coating composition of the present invention is prepared by blending 20 g of NFC 540 (a top-coating material 9 manufactured by JSR) and 0.025 g of tetramethylammonium hydroxide pentahydrate.
The lithography process is carried out in the same manner as Comparative Example 1 using the above-described amine contamination-protecting topcoating composition to produce the 15 0 nin pattern depicted in Figure 4.
Compared to Figure 1, the upper portion of the pattern in Figure 4 is significantly less damaged and shows a significantly improved vertical profile.
Invention Example 3 A novel amine contamination-protecting top-coating composition of the io present invention is prepared by blending 20 g of Aquatar (a top- coating material manufactured by Clariant Inc.) and 0.0 16 g of L-proline.
The top-coating process is performed by repeating the procedure of Comparative Example- 2 but using the aforementioned amine contaminationprotecting top-coating composition. The lithography process described in Comparative Example 2 produced the 150 nm PR pattern shown in Figure 5.
Compared to Figure 2, the upper portion of the pattern of Figure 5 is significantly less damaged, and the vertical profile thereof is significantly improved. Invention Example A novel amine contamination-protecting top-coating composition f6f the present invention is prepared by blending 20 g of Aquatar (a top-coating material manufactured by Clariant Inc.) and 0.025g of tetramethylammonium hydroxide pentahydrate.
The top-coating process is carried out by repeating the procedure of Comparative Example 2 but using the aforementioned amine contaminationprotecting top-coating composition. The lithography process described in Comparative Example 2 produced the 150 nm. PR pattern shown in Figure 6.
Compared with Figure 2, the upper portion of the pattern of Figure 6 is significantly less damaged, and the vertical profile thereof is significantly improved.
Invention Example 5 A novel amine contamination-protecting top-coating composition of the present invention is prepared by blending 20 g of Aquatar (a top-coating material manufactured by Clariant Inc.) and 0.020 g of triethanolamine.
The top-coating process is performed by repeating the procedure of Comparative Example 2 but using the aforementioned amine contamination protecting top-coating composition to produce the 150 nm PR pattern shown in Figure 7. Compared to Figure 2, the upper portion of the pattern in Figure 7 is significantly less damaged, and the vertical profile thereof is significantly improved.
While Examples 1-5 describe using ArF radiation as the exposure light source, other light sources, including the ultrashort wavelength light sources such as KrF (248nm), F2(157nm), E-beam, ion beam and extremely ultraviolet (EUV), can also be employed.
In addition to the above-described PR composition, other conventional PR compositions known to one of ordinary skill in the art can also be used.
Lithography conditions used in the Examples may vary, if necessary.
The results obtained from the above Examples show that amine contamination during PED and pattern deformation on the top surface of the PR layer because of acid diff-usion can be significantly reduced or prevented by adding an amine contamination-protecting compound to a conventional top-coating composition in accordance with the present invention.
11 The foregoing discussion of the invention has been presented for purposes of illustration and description. The foregoing is not intended to limit the invention to the -form or forms disclosed herein. Although the description of the invention has included description of one or more embodiments and certain variations and 5 modifications, other variations and modifications are within the scope of the invention, e.g., as may be within the skill and knowledge of those in the art, after -understanding the present disclosure. It is intended to obtain rights which include alternative embodiments to the extent permitted, including alternate, interchangeable and/or equivalent structures, functions, ranges or steps to those i o claimed, whether or not such alternate, interchangeable and/or equivalent structures, functions ranges or steps are disclosed herein, and without intending to publicly dedicate any patentable subject matter.
12
Claims (10)
- WHAT IS CLAIMED IS:I An amine contamination-protecting top-coating composition for photoresist comprising:(a) a top-coating composition; and (b) a basic compound.
- 2. The amine contamination-protecting top-coating composition of claim 1, wherein the conjugate acid of said basic compound has pKa of about 13 or io less.
- 3. The amine contamination-protecting top-coating composition of claim 1, wherein said basic compound is a nitrogen containing compound.
- 4. The amine contamination-protecting top-coating composition of Claim 1, wherein said basic compound is selected from the group consisting of amine derivatives including amino acid derivatives; amide derivatives; urethane compounds including urea; salts thereof; and mixtures thereof.
- 5. The amine contamination-protecting top-coating composition according to claim 4, wherein said amine derivative is of the formula:R1 R2 R3 wherein, each of R1, R2 and R3 is independently H, or straight or branched CI-C20 13 alkyl.
- The amine contamination-protecting top-coating composition according to claim 5, wherein said alkyl is (i) unsubstituted straight or branched alkyl; or (ii) substituted straight or branched alkyl selected from the group consisting of straight or branchedC]-C20 alcohol (-OH), straight or. branched.Cl-C20 carboxylic acid, straight or branchedCl-C20 amine, straight or branchedCl-C20 ketone,, and straight or branchedCl-C20ester.
- 7. The amine contamination-protecting top-coating composition according to claim 4, wherein said amine derivative is selected from the group consisting of L-proline, tetramethylammonium hydroxide pentahydrate, triethanolamine, and mixtures thereof.
- 8. A process for forming a photoresist pattern, comprising the steps of(a) coating a photoresist composition on a substrate to form a photoresist film; (b) coating the amine contamination-protecting top-coating composition of claim I on the upper portion of the photoresist film to form a top- coating; (c) exposing the top-coated substrate to light by using an exposer; and (d) developing the exposed substrate.
- 9. The process according to claim 8, wherein the exposer comprises a light source which is capable of generating ultrashort wavelength below 250 nm.14
- 10. The process according to claim 9, wherein the light source is selected from the group consisting of KrF (248 nm), ArF (193 nm), F2(157nm), Ebeam, ion beam and extremely ultraviolet (EUV).Il.. A semiconductor element manufactured by employing the process according to claim 8.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-1999-0020538A KR100401116B1 (en) | 1999-06-03 | 1999-06-03 | Amine contamination-protecting material and a fine pattern forming method using the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0012727D0 GB0012727D0 (en) | 2000-07-19 |
| GB2352825A true GB2352825A (en) | 2001-02-07 |
| GB2352825B GB2352825B (en) | 2003-12-17 |
Family
ID=19589910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0012727A Expired - Fee Related GB2352825B (en) | 1999-06-03 | 2000-05-26 | Top-coating composition for photoresist and process for forming fine pattern using the same |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JP2001022080A (en) |
| KR (1) | KR100401116B1 (en) |
| CN (1) | CN1215375C (en) |
| DE (1) | DE10027587A1 (en) |
| FR (1) | FR2794538B1 (en) |
| GB (1) | GB2352825B (en) |
| IT (1) | IT1320493B1 (en) |
| NL (1) | NL1015367C2 (en) |
| TW (1) | TWI266958B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8586282B2 (en) | 2008-07-11 | 2013-11-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100537181B1 (en) * | 1999-12-30 | 2005-12-16 | 주식회사 하이닉스반도체 | Method for forming photoresist pattern capable of preventing degradation caused with delaying develop after exposure |
| KR100390991B1 (en) * | 2001-05-29 | 2003-07-12 | 주식회사 하이닉스반도체 | Forming method for photoresist pattern of semiconductor device |
| KR100390998B1 (en) * | 2001-06-26 | 2003-07-12 | 주식회사 하이닉스반도체 | Method for forming photoresist pattern of semiconductor device |
| JP3476082B2 (en) * | 2001-11-05 | 2003-12-10 | 東京応化工業株式会社 | Coating forming agent for pattern refinement and method for forming fine pattern using the same |
| KR100642416B1 (en) | 2004-08-31 | 2006-11-03 | 주식회사 하이닉스반도체 | Top anti-reflective coating composition and method for pattern formation of semiconductor device using the same |
| CN1786830A (en) * | 2004-12-09 | 2006-06-14 | 三洋电机株式会社 | Method of forming a photoresist pattern |
| US9746768B2 (en) * | 2013-01-24 | 2017-08-29 | Nissan Chemical Industries, Ltd. | Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same |
| JP6007199B2 (en) * | 2013-01-31 | 2016-10-12 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method using the same |
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| WO1992005474A1 (en) * | 1990-09-18 | 1992-04-02 | International Business Machines Corporation | Top coat for acid catalyzed resists |
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| DE4117127A1 (en) * | 1991-05-25 | 1992-11-26 | Basf Ag | Light-sensitive recording element with mask formed directly on top coat - comprising tear-resistant polymer, used as resist or esp. in computer to plate process |
| DE4415113A1 (en) * | 1993-04-30 | 1994-11-24 | Toyo Boseki | Multi-layer photopolymer element |
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| JPS5034966B2 (en) * | 1972-07-24 | 1975-11-12 | ||
| SG52770A1 (en) * | 1992-07-10 | 1998-09-28 | Hoechst Celanese Corp | Metal ion reduction in top anti-reflective coatings for photoresists |
| US5631314A (en) * | 1994-04-27 | 1997-05-20 | Tokyo Ohka Kogyo Co., Ltd. | Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition |
| US5506090A (en) * | 1994-09-23 | 1996-04-09 | Minnesota Mining And Manufacturing Company | Process for making shoot and run printing plates |
| JP3510003B2 (en) * | 1995-05-01 | 2004-03-22 | クラリアント インターナショナル リミテッド | Composition for anti-reflective coating |
| JPH0971765A (en) * | 1995-06-29 | 1997-03-18 | Nippon Zeon Co Ltd | Antitack composition |
| JP3694703B2 (en) * | 1996-04-25 | 2005-09-14 | Ａｚエレクトロニックマテリアルズ株式会社 | Anti-reflection coating composition |
| JPH10261574A (en) * | 1997-03-19 | 1998-09-29 | Fujitsu Ltd | Manufacture of semiconductor device |
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1999
- 1999-06-03 KR KR10-1999-0020538A patent/KR100401116B1/en not_active IP Right Cessation
-
2000
- 2000-05-23 TW TW089109900A patent/TWI266958B/en not_active IP Right Cessation
- 2000-05-26 GB GB0012727A patent/GB2352825B/en not_active Expired - Fee Related
- 2000-05-30 CN CNB001093614A patent/CN1215375C/en not_active Expired - Fee Related
- 2000-05-31 JP JP2000162999A patent/JP2001022080A/en active Pending
- 2000-05-31 FR FR0007020A patent/FR2794538B1/en not_active Expired - Fee Related
- 2000-05-31 NL NL1015367A patent/NL1015367C2/en not_active IP Right Cessation
- 2000-06-01 IT IT2000TO000510A patent/IT1320493B1/en active
- 2000-06-02 DE DE10027587A patent/DE10027587A1/en not_active Withdrawn
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| US3652273A (en) * | 1967-09-11 | 1972-03-28 | Ibm | Process using polyvinyl butral topcoat on photoresist layer |
| EP0275147A2 (en) * | 1987-01-12 | 1988-07-20 | E.I. du Pont de Nemours and Company | Improvements in or relating to printing plate precursors |
| EP0290916A2 (en) * | 1987-05-12 | 1988-11-17 | Hoechst Aktiengesellschaft | Radiation-sensitive registration material |
| WO1992005474A1 (en) * | 1990-09-18 | 1992-04-02 | International Business Machines Corporation | Top coat for acid catalyzed resists |
| EP0488372A1 (en) * | 1990-11-30 | 1992-06-03 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming process |
| DE4117127A1 (en) * | 1991-05-25 | 1992-11-26 | Basf Ag | Light-sensitive recording element with mask formed directly on top coat - comprising tear-resistant polymer, used as resist or esp. in computer to plate process |
| DE4415113A1 (en) * | 1993-04-30 | 1994-11-24 | Toyo Boseki | Multi-layer photopolymer element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8586282B2 (en) | 2008-07-11 | 2013-11-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US8592133B2 (en) | 2008-07-11 | 2013-11-26 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
Also Published As
| Publication number | Publication date |
|---|---|
| ITTO20000510A0 (en) | 2000-06-01 |
| JP2001022080A (en) | 2001-01-26 |
| KR100401116B1 (en) | 2003-10-10 |
| ITTO20000510A1 (en) | 2001-12-01 |
| FR2794538A1 (en) | 2000-12-08 |
| TWI266958B (en) | 2006-11-21 |
| DE10027587A1 (en) | 2000-12-21 |
| CN1215375C (en) | 2005-08-17 |
| FR2794538B1 (en) | 2004-08-20 |
| CN1276541A (en) | 2000-12-13 |
| NL1015367A1 (en) | 2000-12-06 |
| GB0012727D0 (en) | 2000-07-19 |
| KR20010001380A (en) | 2001-01-05 |
| IT1320493B1 (en) | 2003-12-10 |
| NL1015367C2 (en) | 2001-05-17 |
| GB2352825B (en) | 2003-12-17 |
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| PCNP | Patent ceased through non-payment of renewal fee |
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